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    MoOx-based resistance switching materials
    11.
    发明授权
    MoOx-based resistance switching materials 有权
    基于MoOx的电阻开关材料

    公开(公告)号：US08907314B2

    公开(公告)日：2014-12-09

    申请号：US13727958

    申请日：2012-12-27

    Applicant: Intermolecular, Inc.

    Inventor： Sergey Barabash ,  Tony P. Chiang ,  Dipankar Pramanik

    IPC: H01L29/02 ,  H01L45/00

    CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1641

    Abstract: Molybdenum oxide can be used to form switching elements in a resistive memory device. The atomic ratio of oxygen to molybdenum can be between 2 and 3. The molybdenum oxide exists in various Magneli phases, such as Mo13O33, Mo4O11, Mo17O47, Mo8O23, or Mo9O26. An electric field can be established across the switching layers, for example, by applying a set or reset voltage. The electric field can cause movement of the oxygen charges, e.g., O2− ions, changing the composition profile of the switching layers, forming bistable states, including a high resistance state with MoO3 and a low resistance state with MoOx (x

    Abstract translation: 氧化钼可用于在电阻式存储器件中形成开关元件。 氧与钼的原子比可以在2和3之间。氧化钼存在于各种Magneli相中，例如Mo13O33，Mo4O11，Mo17O47，Mo8O23或Mo9O26。 可以跨开关层建立电场，例如通过施加置位或复位电压。 电场可导致氧电荷的移动，例如O 2离子，改变开关层的组成分布，形成双稳态，包括具有MoO 3的高电阻状态和具有MoO x（x <3）的低电阻状态）。

    MoOx-Based Resistance Switching Materials
    12.
    发明申请
    MoOx-Based Resistance Switching Materials 有权
    基于MoOx的电阻开关材料

    公开(公告)号：US20140183432A1

    公开(公告)日：2014-07-03

    申请号：US13727958

    申请日：2012-12-27

    Applicant: INTERMOLECULAR, INC.

    Inventor： Sergey Barabash ,  Tony P. Chiang ,  Dipankar Pramanik

    IPC: H01L45/00

    CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1641

    Abstract: Molybdenum oxide can be used to form switching elements in a resistive memory device. The atomic ratio of oxygen to molybdenum can be between 2 and 3. The molybdenum oxide exists in various Magneli phases, such as Mo13O33, Mo4O11, Mo17O47, Mo8O23, or Mo9O26. An electric field can be established across the switching layers, for example, by applying a set or reset voltage. The electric field can cause movement of the oxygen charges, e.g., O2− ions, changing the composition profile of the switching layers, forming bistable states, including a high resistance state with MoO3 and a low resistance state with MoOx (x

    Abstract translation: 氧化钼可用于在电阻式存储器件中形成开关元件。 氧与钼的原子比可以在2和3之间。氧化钼存在于各种Magneli相中，例如Mo13O33，Mo4O11，Mo17O47，Mo8O23或Mo9O26。 可以跨开关层建立电场，例如通过施加置位或复位电压。 电场可导致氧电荷的移动，例如O 2离子，改变开关层的组成分布，形成双稳态，包括具有MoO 3的高电阻状态和具有MoO x（x <3）的低电阻状态）。

    Methods to improve leakage of high K materials
    13.
    发明授权
    Methods to improve leakage of high K materials 有权
    改善高K材料泄漏的方法

    公开(公告)号：US08766346B1

    公开(公告)日：2014-07-01

    申请号：US13720289

    申请日：2012-12-19

    Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc.

    Inventor： Xiangxin Rui ,  Sergey Barabash

    IPC: H01L29/92 ,  H01L49/02

    CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/56 ,  H01L28/60

    Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor layer inserted between the dielectric layer and at least one of the two electrode layers. In some embodiments, the dielectric layer may be doped with an oxygen donor dopant. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current.

    Abstract translation: 降低DRAM金属 - 绝缘体 - 金属电容器中的漏电流的方法包括形成电容器堆叠，该电容器堆叠包括介于介电层和两个电极层中的至少一个之间的供氧体层。 在一些实施例中，介电层可以掺杂有氧供体掺杂剂。 氧供体材料为介电层提供氧气并降低氧空位的浓度，从而减少漏电流。

    Controlling ReRam Forming Voltage with Doping
    15.
    发明申请
    Controlling ReRam Forming Voltage with Doping 有权
    用掺杂控制ReRam成型电压

    公开(公告)号：US20140166958A1

    公开(公告)日：2014-06-19

    申请号：US13719051

    申请日：2012-12-18

    Applicant: INTERMOLECULAR, INC.

    Inventor： Sergey Barabash ,  Charlene Chen ,  Dipankar Pramanik

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1641

    Abstract: An internal electrical field in a resistive memory element can be formed to reduce the forming voltage. The internal electric field can be formed by incorporating one or more charged layers within the switching dielectric layer of the resistive memory element. The charged layers can include adjacent charge layers to form dipole layers. The charged layers can be formed at or near the interface of the switching dielectric layer with an electrode layer. Further, the charged layer can be oriented with lower valence substitution side towards lower work function electrode, and higher valence substitution side towards higher work function electrode.

    Abstract translation: 可以形成电阻式存储元件中的内部电场以降低成形电压。 可以通过在电阻式存储元件的开关电介质层内并入一个或多个带电层来形成内部电场。 带电层可以包括相邻的电荷层以形成偶极层。 带电层可以在开关电介质层的界面处或附近形成电极层。 此外，带电层可以朝向较低功函电极的较低价取代面取向，而朝较高功函电极取向较高的取代价。

    Electrode for low-leakage devices
    16.
    发明授权
    Electrode for low-leakage devices 有权
    低漏电极用电极

    公开(公告)号：US09245941B2

    公开(公告)日：2016-01-26

    申请号：US14140807

    申请日：2013-12-26

    Applicant: Intermolecular, Inc.

    Inventor： Sergey Barabash ,  Mankoo Lee ,  Dipankar Pramanik

    IPC: H01L21/28 ,  H01L49/02 ,  H01L21/02 ,  H01L27/108

    CPC classification number: H01L28/60 ,  H01L21/02156 ,  H01L21/02186 ,  H01L21/02356 ,  H01L21/28088 ,  H01L21/28229 ,  H01L27/1085 ,  H01L2924/0134 ,  H01L2924/0533 ,  H01L2924/05341 ,  H01L2924/10671

    Abstract: A YBCO-based conductive material can be used as an electrode, which can contact a dielectric such as a high k dielectric. Alternatively, a material with a narrow conduction band can be used as an electrode, which can contact a dielectric such as a high k dielectric. By aligning the dielectric with the band gap of the YBCO-based electrode or with the band gap of the narrow-band conductive material electrode, e.g., the conduction band minimum of the dielectric falls into one of the band gaps of the YBCO-based or narrow-band conductive material, thermionic leakage through the dielectric can be reduced, since the excited electrons or holes in the electrode would need higher thermal excitation energy to overcome the band gap before passing through the dielectric layer.

    Abstract translation: 可以使用YBCO基导电材料作为电极，其可以与诸如高k电介质的电介质接触。 或者，具有窄导带的材料可以用作可以与诸如高k电介质的电介质接触的电极。 通过将电介质与YBCO基电极的带隙或窄带导电材料电极的带隙对准，例如，电介质的导带最小值落入基于YBCO的电极的带隙之一或 窄带导电材料可以减少通过电介质的热离子泄漏，因为电极中激发的电子或空穴需要较高的热激发能量以克服通过电介质层之前的带隙。

    Switching conditions for resistive random access memory cells
    17.
    发明授权
    Switching conditions for resistive random access memory cells 有权
    电阻随机存取存储单元的开关条件

    公开(公告)号：US09240236B1

    公开(公告)日：2016-01-19

    申请号：US14577613

    申请日：2014-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Sergey Barabash ,  Dipankar Pramanik

    IPC: G11C11/00 ,  G11C13/00 ,  G11C29/50 ,  G11C29/02

    CPC classification number: G11C29/02 ,  G11C13/0007 ,  G11C29/50 ,  G11C2013/0083 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1641

    Abstract: Provided are method for determining switching conditions for production memory cells based on dopant flux during set and reset operations. One group of test memory cells, which are representative of the production memory cells, is subjected to a prolonged application of a set voltage, while another group is subjected to a prolonged application of a reset voltage. Different durations may be used for different cells in each group. A dopant concentration profile of a test component in each cell is determined for both groups. One cell from each group may be identified such that the changes in the dopant concentration profiles in these two identified cells are complementary. The profile complementarity indicates that these two identified cells had a similar dopant flux during voltage applications. Durations of set and reset voltage applications for these two cells may be used to determine switching conditions for production memory cells.

    Abstract translation: 提供了在设置和复位操作期间基于掺杂剂通量确定生产存储器单元的切换条件的方法。 代表生产存储器单元的一组测试存储单元经受长时间施加的设定电压，而另一组经受长时间应用复位电压。 不同的持续时间可以用于每组中的不同细胞。 确定每个细胞中测试组分的掺杂浓度分布。 可以鉴定每个组中的一个细胞，使得这两个鉴定的细胞中的掺杂剂浓度分布的变化是互补的。 配置互补性表明这两个识别的电池在电压施加期间具有相似的掺杂剂通量。 这两个单元的设定和复位电压应用的持续时间可用于确定生产存储单元的切换条件。

    Electrode for Low-Leakage Devices
    19.
    发明申请
    Electrode for Low-Leakage Devices 有权
    低漏电极用电极

    公开(公告)号：US20140273427A1

    公开(公告)日：2014-09-18

    申请号：US14140807

    申请日：2013-12-26

    Applicant: Intermolecular, Inc.

    Inventor： Sergey Barabash ,  Mankoo Lee ,  Dipankar Pramanik

    IPC: H01L21/28

    CPC classification number: H01L28/60 ,  H01L21/02156 ,  H01L21/02186 ,  H01L21/02356 ,  H01L21/28088 ,  H01L21/28229 ,  H01L27/1085 ,  H01L2924/0134 ,  H01L2924/0533 ,  H01L2924/05341 ,  H01L2924/10671

    Abstract: A YBCO-based conductive material can be used as an electrode, which can contact a dielectric such as a high k dielectric. Alternatively, a material with a narrow conduction band can be used as an electrode, which can contact a dielectric such as a high k dielectric. By aligning the dielectric with the band gap of the YBCO-based electrode or with the band gap of the narrow-band conductive material electrode, e.g., the conduction band minimum of the dielectric falls into one of the band gaps of the YBCO-based or narrow-band conductive material, thermionic leakage through the dielectric can be reduced, since the excited electrons or holes in the electrode would need higher thermal excitation energy to overcome the band gap before passing through the dielectric layer.

    Abstract translation: 可以使用YBCO基导电材料作为电极，其可以与诸如高k电介质的电介质接触。 或者，具有窄导带的材料可以用作可以与诸如高k电介质的电介质接触的电极。 通过将电介质与YBCO基电极的带隙或窄带导电材料电极的带隙对准，例如，电介质的导带最小值落入基于YBCO的电极的带隙之一或 窄带导电材料可以减少通过电介质的热离子泄漏，因为电极中激发的电子或空穴需要较高的热激发能量以克服通过电介质层之前的带隙。

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