Techniques for forming contacts for active BEOL
    12.
    发明授权
    Techniques for forming contacts for active BEOL 有权
    用于形成活动BEOL的触点的技术

    公开(公告)号:US09490164B1

    公开(公告)日:2016-11-08

    申请号:US14747103

    申请日:2015-06-23

    Abstract: In one aspect, a method for forming a contact to a device is provided which includes the steps of: forming a conformal etch stop layer surrounding the device; forming a dielectric layer over and covering the device; forming a contact trench in the dielectric layer, wherein the contact trench is present over the device and extends down to, or beyond, the etch stop layer; exposing a contact region of the device within the contact trench by selectively removing a portion of the etch stop layer covering a top portion of the device; and filling the contact trench with a conductive material to form the contact to the device. Other methods for forming a contact to a device and also to BEOL wiring are provided as are device contact structures.

    Abstract translation: 在一个方面,提供了一种用于形成与器件的接触的方法,其包括以下步骤:形成围绕所述器件的共形蚀刻停止层; 在该装置上方形成介电层; 在所述电介质层中形成接触沟槽,其中所述接触沟槽存在于所述器件上并向下延伸至或超过所述蚀刻停止层; 通过选择性地去除覆盖设备的顶部的蚀刻停止层的一部分来暴露接触沟槽内的器件的接触区域; 以及用导电材料填充接触沟槽以形成与该器件的接触。 与设备接触结构一起提供了用于形成与器件的接触以及BEOL布线的其它方法。

    Airgap-containing interconnect structure with patternable low-k material and method of fabricating
    13.
    发明授权
    Airgap-containing interconnect structure with patternable low-k material and method of fabricating 有权
    具有可图案化低k材料的含气隙互连结构和制造方法

    公开(公告)号:US09035462B2

    公开(公告)日:2015-05-19

    申请号:US13791502

    申请日:2013-03-08

    Inventor: Qinghuang Lin

    Abstract: An interconnect structure is provided that includes at least one patterned and cured low-k dielectric material located on a surface of a patterned inorganic antireflective coating that is located atop a substrate. The inorganic antireflective coating comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. The at least one cured and patterned low-k dielectric material and the patterned inorganic antireflective coating have conductively filled regions embedded therein and the at least one cured and patterned low-k dielectric material has at least one airgap located adjacent, but not directly in contact with the conductively filled regions.

    Abstract translation: 提供了一种互连结构,其包括位于图案化无机抗反射涂层的位于衬底顶部的表面上的至少一个图案化和固化的低k电介质材料。 无机抗反射涂层包含M,C和H的原子,其中M是Si,Ge,B,Sn,Fe,Ta,Ti,Ni,Hf和La中的至少一种。至少一种固化和图案化的低k电介质 材料和图案化的无机抗反射涂层具有嵌入其中的导电填充区域,并且所述至少一个固化和图案化的低k电介质材料具有邻近但不直接与导电填充区域接触的至少一个气隙。

    Adaptive pain management and reduction based on monitoring user conditions

    公开(公告)号:US11004563B2

    公开(公告)日:2021-05-11

    申请号:US15986409

    申请日:2018-05-22

    Abstract: Techniques regarding pain treatment are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a memory that can store computer executable components. The system can also comprise a processor, operably coupled to the memory, and that can execute the computer executable components stored in the memory. The computer executable components can include: a data collection component that can determine at least one parameter associated with a pain perception of a subject, a computing component that can determine a relationship between the pain perception and the at least one parameter using artificial intelligence, and can determine a treatment for the subject based on the relationship; and a treatment component that can cause a device associated with the subject to apply at least a portion of the treatment.

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