公开(公告)号：US10048204B2

公开(公告)日：2018-08-14

申请号：US15602634

申请日：2017-05-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Yann Astier ,  Huan Hu ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: G01N31/22 ,  G01N21/64 ,  H01L33/24 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L31/0352 ,  H01L31/0288 ,  H01L31/173 ,  H01L33/44

Abstract: Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.

公开(公告)号：US09719926B2

公开(公告)日：2017-08-01

申请号：US14942072

申请日：2015-11-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Yann Astier ,  Huan Hu ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: B82Y40/00 ,  B82Y15/00 ,  G01N21/64 ,  H01L33/24 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L31/0352 ,  H01L31/0288 ,  H01L31/173

CPC classification number: G01N21/6428 ,  B01L3/5027 ,  B01L3/502753 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2400/0421 ,  B82Y15/00 ,  G01N21/645 ,  G01N2021/0346 ,  G01N2021/6439 ,  G01N2201/062 ,  H01L31/0288 ,  H01L31/035227 ,  H01L31/173 ,  H01L33/06 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44

Abstract: Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.

公开(公告)号：US20170205351A1

公开(公告)日：2017-07-20

申请号：US15432732

申请日：2017-02-14

Applicant: International Business Machines Corporation

Inventor： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: G01N21/64 ,  G02B6/132 ,  G02B6/122 ,  H01L31/16 ,  H01L33/32 ,  H01L33/00 ,  H01L31/0304 ,  G02B6/136 ,  G02B6/12

CPC classification number: G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

公开(公告)号：US20170205349A1

公开(公告)日：2017-07-20

申请号：US15432696

申请日：2017-02-14

Applicant: International Business Machines Corporation

Inventor： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: G01N21/64 ,  G02B6/12 ,  H01L31/16 ,  H01L33/00 ,  H01L31/0304 ,  G02B6/122 ,  H01L33/32

CPC classification number: G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

Abstract: A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.

公开(公告)号：US20170179328A1

公开(公告)日：2017-06-22

申请号：US15352921

申请日：2016-11-16

Applicant: International Business Machines Corporation

Inventor： Yann Astier ,  Huan Hu ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: H01L31/173 ,  B01L3/00 ,  H01L31/0216 ,  H01L31/105 ,  H01L33/00

CPC classification number: H01L31/173 ,  B01L3/502715 ,  B01L3/502761 ,  B01L2200/0652 ,  B01L2200/10 ,  B01L2300/0627 ,  B01L2300/12 ,  G01N15/1436 ,  G01N15/1484 ,  G01N21/6428 ,  G01N33/54306 ,  G01N33/54373 ,  G01N2015/0065 ,  G01N2201/062 ,  H01L27/156 ,  H01L31/02164 ,  H01L31/035227 ,  H01L31/105 ,  H01L31/125 ,  H01L31/167 ,  H01L31/18 ,  H01L33/0012 ,  H01L33/18 ,  H01L33/20 ,  H01L33/58

Abstract: In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

公开(公告)号：US20170167981A1

公开(公告)日：2017-06-15

申请号：US14965948

申请日：2015-12-11

Applicant: International Business Machines Corporation

Inventor： Huan Hu ,  Oki Gunawan ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt ,  Yann Astier

IPC: G01N21/64 ,  B01L3/00 ,  G01N15/14

CPC classification number: G01N21/6486 ,  B01L3/502753 ,  B01L2200/0652 ,  B01L2200/10 ,  B01L2300/0627 ,  B01L2300/0654 ,  B01L2300/0864 ,  B01L2400/086 ,  G01N15/0255 ,  G01N15/1429 ,  G01N15/1436 ,  G01N15/1484 ,  G01N21/05 ,  G01N21/645 ,  G01N2015/0038 ,  G01N2015/0065 ,  G01N2015/035 ,  G01N2015/1081 ,  G01N2021/0346 ,  G01N2201/024 ,  G01N2201/06113 ,  G01N2201/062

Abstract: Methods, apparatuses, and computer program products are provided where fluid, such as a blood sample, is entered into a microfluidic channel in a microchip where the microfluidic channel possesses a micro/nanopillar array for sorting molecules by size. When the fluid passes through the micro/nanopillar array it is separated into particles of interest or particles not of interest or both. When particles of interest are lit by a light source via a first waveguide in the microchip connecting the light source to the microfluidic channel, then lighted particles of interest can be detected by an optical detector via a second waveguide in the microchip connecting the optical detector to the microfluidic channel. The information from the optical detector can be analyzed further by connecting the microchip to a mobile computing device with its own processing abilities or abilities via the internet or cloud.

公开(公告)号：US11009464B2

公开(公告)日：2021-05-18

申请号：US14965948

申请日：2015-12-11

Applicant: International Business Machines Corporation

Inventor： Huan Hu ,  Oki Gunawan ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt ,  Yann Astier

IPC: G01N21/64 ,  G01N15/14 ,  C12Q1/04 ,  B01L3/00 ,  G01N15/02 ,  G01N21/05 ,  G01N15/00 ,  G01N21/03 ,  G01N15/10

Abstract: Methods, apparatuses, and computer program products are provided where fluid, such as a blood sample, is entered into a microfluidic channel in a microchip where the microfluidic channel possesses a micro/nanopillar array for sorting molecules by size. When the fluid passes through the micro/nanopillar array it is separated into particles of interest or particles not of interest or both. When particles of interest are lit by a light source via a first waveguide in the microchip connecting the light source to the microfluidic channel, then lighted particles of interest can be detected by an optical detector via a second waveguide in the microchip connecting the optical detector to the microfluidic channel. The information from the optical detector can be analyzed further by connecting the microchip to a mobile computing device with its own processing abilities or abilities via the internet or cloud.

公开(公告)号：US20200350449A1

公开(公告)日：2020-11-05

申请号：US16401863

申请日：2019-05-02

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Devendra K. Sadana ,  William T. Spratt ,  Ghavam Shahidi

IPC: H01L31/0475 ,  H01L31/0304 ,  H01L31/0392 ,  H01L31/05 ,  H01L31/0735 ,  H01L31/18

Abstract: Monolithic, lateral series photovoltaic and photodiode devices on an insulating substrate are provided. In one aspect, a method of forming a photovoltaic device includes: forming a photovoltaic stack on an insulating substrate that includes: a bottom contact layer disposed on the insulating substrate, a BSF layer disposed on the bottom contact layer, a junction layer disposed on the BSF layer, a window layer disposed on the junction layer, and a top contact layer disposed on the window layer; patterning the top contact layer, the window layer, the junction layer, the BSF layer and the bottom contact layer into individual device stacks; forming contact pads on patterned portions of the bottom/top contact layers in each of the device stacks; and forming interconnects in contact with the contact pads that serially connect the device stacks. A photovoltaic device is also provided.

公开(公告)号：US09995682B2

公开(公告)日：2018-06-12

申请号：US15432719

申请日：2017-02-14

Applicant: International Business Machines Corporation

Inventor： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: G01N21/64 ,  G02B6/132 ,  H01L31/16 ,  H01L33/32 ,  H01L33/00 ,  H01L31/0304 ,  G02B6/13 ,  G02B6/12 ,  G02B6/136 ,  G02B6/122 ,  H01L27/14 ,  H01L27/15

CPC classification number: G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

公开(公告)号：US09983133B2

公开(公告)日：2018-05-29

申请号：US15432732

申请日：2017-02-14

Applicant: International Business Machines Corporation

Inventor： Yann A. N. Astier ,  Ning Li ,  Devendra K. Sadana ,  Joshua T. Smith ,  William T. Spratt

IPC: H01L31/16 ,  H01L31/0304 ,  H01L33/32 ,  G01N21/64 ,  G02B6/132 ,  G02B6/136 ,  G02B6/122 ,  G02B6/12 ,  H01L33/00 ,  H01L27/14 ,  H01L27/15

CPC classification number: G01N21/6454 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2300/0654 ,  G01N15/1436 ,  G01N15/1459 ,  G01N15/1484 ,  G01N21/6428 ,  G01N21/645 ,  G01N2015/1006 ,  G01N2021/6439 ,  G01N2021/6482 ,  G01N2201/0873 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12078 ,  G02B2006/12123 ,  H01L27/14 ,  H01L27/15 ,  H01L31/03044 ,  H01L31/16 ,  H01L33/007 ,  H01L33/32

Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.