公开(公告)号：US06387721B1

公开(公告)日：2002-05-14

申请号：US09404376

申请日：1999-09-24

申请人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

发明人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

IPC分类号： H01L2100

CPC分类号： H01S5/2231 ,  H01S5/0202 ,  H01S5/0658 ,  H01S5/2272 ,  H01S5/3213

摘要： In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

摘要翻译： 在包括衬底的半导体发光器件中，包括形成在衬底上的有源层的第一化合物半导体层，形成在第一化合物半导体层上的脊状的第二化合物半导体层和形成在第一化合物半导体层上的保护膜 化合物半导体层在第二化合物半导体层的两侧，所公开的半导体发光器件具有形成在保护膜外部的第一化合物半导体层上方的电流阻挡层。 这种半导体发光器件由于容易地被切割和组装而具有高的产量，具有适当的挤压电流，并且当在结合型组装时具有高输出和更长的寿命。

公开(公告)号：US5804834A

公开(公告)日：1998-09-08

申请号：US888641

申请日：1997-07-07

申请人： Kenji Shimoyama ,  Hideki Gotoh

发明人： Kenji Shimoyama ,  Hideki Gotoh

IPC分类号： H01L29/201 ,  H01L29/45 ,  H01L33/00 ,  H01L33/02 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L33/02 ,  H01L29/201 ,  H01L29/452 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/10 ,  H01L33/40

摘要： In a wide band cap semiconductor, a GaP.sub.x N.sub.1-x (0.1.ltoreq.x.ltoreq.0.9) layer is inserted between a layer comprising AlGaInN and an electrode, The potential barrier between the electrode and the surface layer can be reduced. Contact resistance can be decreased, and ohmic contact can be easily taken up.

摘要翻译： 在宽带帽半导体中，GaPxN1-x（0.1

公开(公告)号：US5018159A

公开(公告)日：1991-05-21

申请号：US440522

申请日：1989-11-22

申请人： Yoshihiro Suzuki ,  Hiroyoshi Yajima ,  Junichi Shimada ,  Kenji Shimoyama ,  Hideki Gotoh

发明人： Yoshihiro Suzuki ,  Hiroyoshi Yajima ,  Junichi Shimada ,  Kenji Shimoyama ,  Hideki Gotoh

IPC分类号： H01S5/00 ,  H01S5/042

CPC分类号： H01S5/0425

摘要： Disclosed is a divided electrode type semiconductor layer device designed to improve the separation of electrodes without reducing the amount of doping for carrier injection layers. A double-hetero-structure is formed on a semi-insulating substrate, and at least two pairs of carrier injection clad layers are thereafter buried like lands while a high-resistance portion is left between the carrier injection clad layers to electrically separate these layers. The electrodes are respectively formed on the separated carrier injection layers.

公开(公告)号：US20120112320A1

公开(公告)日：2012-05-10

申请号：US13309138

申请日：2011-12-01

申请人： Shuichi KUBO ,  Kenji Shimoyama ,  Kazumasa Kiyomi ,  Kenji Fujito ,  Yutaka Mikawa

发明人： Shuichi KUBO ,  Kenji Shimoyama ,  Kazumasa Kiyomi ,  Kenji Fujito ,  Yutaka Mikawa

IPC分类号： H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B23/02

CPC分类号： C30B25/20 ,  C23C16/303 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609

摘要： A production process for a nitride semiconductor crystal, comprising growing a semiconductor layer on a seed substrate to obtain a nitride semiconductor crystal, wherein the seed substrate comprises a plurality of seed substrates made of the same material, at least one of the plurality of seed substrates differs in the off-angle from the other seed substrates, and a single semiconductor layer is grown by disposing the plurality of seed substrates in a semiconductor crystal production apparatus, such that when the single semiconductor layer is grown on the plurality of seed substrates, the off-angle distribution in the single semiconductor layer becomes smaller than the off-angle distribution in the plurality of seed substrates.

摘要翻译： 一种氮化物半导体晶体的生产方法，包括在籽晶基底上生长半导体层以获得氮化物半导体晶体，其中种子基底包括由相同材料制成的多个晶种基底，多个晶种基底中的至少一个 与其他种子基板的偏角不同，并且通过将多个种子基板设置在半导体晶体制造装置中而生长单个半导体层，使得当在多个种子基板上生长单个半导体层时， 单个半导体层中的偏角分布变得小于多个种子基板中的偏角分布。

公开(公告)号：US06744066B2

公开(公告)日：2004-06-01

申请号：US09785428

申请日：2001-02-20

申请人： Kenji Shimoyama ,  Kazumasa Kiyomi ,  Hideki Gotoh ,  Satoru Nagao

发明人： Kenji Shimoyama ,  Kazumasa Kiyomi ,  Hideki Gotoh ,  Satoru Nagao

IPC分类号： H01L2906

CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/24 ,  H01S5/2275 ,  H01S2304/04

摘要： The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

摘要翻译： 根据本发明的半导体器件包括在半导体衬底上或在半导体衬底上生长的外延生长层上形成具有V形横截面的V形沟槽，并且仅在所述V的底部提供有源层 -槽。 根据本发明的制造半导体器件的方法包括以下步骤：在半导体衬底或其上生长的外延生长层的<011>方向上形成条状蚀刻保护膜，使用氯化氢作为蚀刻进行气体蚀刻 在半导体衬底上或在半导体衬底上生长的外延生长层上的气体形成V形槽，并在所述V形槽的底部形成有源层。

公开(公告)号：US06278137B1

公开(公告)日：2001-08-21

申请号：US09035333

申请日：1998-03-05

申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

IPC分类号： H01L3300

CPC分类号： H01L33/30 ,  H01S5/3211 ,  H01S5/32325

摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.

摘要翻译： 本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物， 高达0.5μm的有源层，位于第二覆盖层的旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型的AlGaInP 并且具有高达0.5μm的厚度，以及位于第三覆盖层旁边并且包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电型AlGaP的光提取层 或GaP，并且具有1μm至100μm的厚度。

公开(公告)号：US5376581A

公开(公告)日：1994-12-27

申请号：US118792

申请日：1993-09-10

申请人： Kenji Shimoyama ,  Yuichi Inoue ,  Hideki Gotoh

发明人： Kenji Shimoyama ,  Yuichi Inoue ,  Hideki Gotoh

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/40 ,  H01L21/20

CPC分类号： H01S5/2231 ,  H01S5/2272 ,  H01S5/4031 ,  Y10S148/095

摘要： In a process for fabricating a semiconductor laser by forming a double-heterostructure made up of a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate at the first growth step, forming protecting films for selective growth on both sides of a striped region for current injection, without etching the second cladding layer, and growing a third cladding layer and a contact layer for current injection at a second growth step, the second cladding layer formed at the first growth step is grown to the thickness required for achieving laser characteristics.

摘要翻译： 在通过在第一生长步骤中在半导体衬底上形成由第一包覆层，有源层和第二包覆层构成的双异质结构来制造半导体激光的工艺中，在第二生长步骤的两侧形成用于选择性生长的保护膜 用于电流注入的条纹区域，而不蚀刻第二包层，并且在第二生长步骤生长用于电流注入的第三包层和接触层，在第一生长步骤形成的第二包层生长至所需的厚度 实现激光特性。

公开(公告)号：US20090081110A1

公开(公告)日：2009-03-26

申请号：US12282961

申请日：2007-03-08

申请人： Hiroyuki Shibata ,  Yoshio Waseda ,  Kenji Shimoyama ,  Kazumasa Kiyomi ,  Hirobumi Nagaoka

发明人： Hiroyuki Shibata ,  Yoshio Waseda ,  Kenji Shimoyama ,  Kazumasa Kiyomi ,  Hirobumi Nagaoka

IPC分类号： C01B21/06 ,  C30B23/02

CPC分类号： C30B25/165 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

摘要： Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G1) containing H2 gas, GaCl gas (G2), and NH3 gas (G3) to a reaction chamber (10), and setting the growth temperature at 900 (° C.) (inclusive) to 1,200 (° C.) (inclusive), the growth pressure at 8.08×104 (Pa) (inclusive) to 1.21×105 (Pa) (inclusive), the partial pressure of the GaCl gas (G2) at 1.0×104 (Pa) (inclusive) to 1.0×104 (Pa) (inclusive), and the partial pressure of the NH3 gas (G3) at 9.1×102 (Pa) (inclusive) to 2.0×104 (Pa) (inclusive).

摘要翻译： 公开了一种制造具有高导热性的GaN基材料的方法。 通过向反应室（10）供给含有H 2气体，GaCl气体（G2）和NH 3气体（G3）的载气（G1），通过HVPE（氢化物气相外延生长）来生长氮化镓系材料， 将生长温度设定在900（℃）（含）以上为1,200（℃）（以下），将生长压力设定在8.08×104（Pa）（含）以上至1.21×10 5 Pa以上， 的气体（G2）在1.0×104（Pa）（包括）至1.0×104（Pa）（含）的范围内，NH 3气体（G3）在9.1×102（Pa）（包括在内）的分压为2.0×10 4（ Pa）（含）。

公开(公告)号：US20050230672A1

公开(公告)日：2005-10-20

申请号：US11084169

申请日：2005-03-21

申请人： Kaori Kurihara ,  Kenji Shimoyama

发明人： Kaori Kurihara ,  Kenji Shimoyama

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L29/06 ,  H01L21/00

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631

摘要： III-V Compound semiconductor crystals characterized by containing Al and In as main constituent elements of group III, and also containing a constituent element of group V, and characterized in that the carbon concentration in the compound semiconductor crystals is 1×1016 cm−3 or higher, and the oxygen concentration therein is 1×1018 cm−3 or lower and is not higher than the carbon concentration; and a method for producing the III-V compound semiconductor crystals. By using the III-V compound semiconductor crystals, a semiconductor device showing satisfactory electric conductivity characteristics, and a semiconductor laser showing satisfactory high speed modulation characteristics can be provided.

摘要翻译： III-V化合物半导体晶体，其特征在于，含有Al和In作为III族的主要组成元素，并且还含有V族的构成元素，其特征在于，化合物半导体晶体中的碳浓度为1×10 16， SUP> 3×3以上，氧浓度为1×10 8 -3 -3以下，不高于碳浓度 ; 和III-V族化合物半导体晶体的制造方法。 通过使用III-V族化合物半导体晶体，可以提供显示出令人满意的导电特性的半导体器件和表现出令人满意的高速调制特性的半导体激光器。

公开(公告)号：US5827365A

公开(公告)日：1998-10-27

申请号：US376443

申请日：1995-01-23

申请人： Kenji Shimoyama ,  Hideki Gotoh

发明人： Kenji Shimoyama ,  Hideki Gotoh

IPC分类号： H01L21/20 ,  H01L21/205 ,  C30B25/14

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639

摘要： A vapor phase growth process for the fabrication of a thin film form of compound semiconductor of elements of Groups III-V, using a halogen element-free hydride and a halogen element-free organic metal as the source materials for growth, is characterized in that a halide gas and/or a halogen gas that are free from the mother elements of the compound to be grown are added to the reaction atmosphere while the compound is growing. A trace amount(s) of the halide and/or halogen gas(es) that are free from the mother elements of the compound to be grown, such as HCl, is added to the reaction atmosphere while the compound is growing, thereby making it possible to flatten the heterojunction interface or effect the growth of high-quality crystals without deposition of polycrystals on a mask over a wide range.

摘要翻译： 用于制造III-V族元素的薄膜形式的使用无卤元素氢化物和无卤元素的有机金属作为生长源的气相生长方法的特征在于： 在化合物生长的同时，在反应气氛中加入不含待生长化合物的母体元素的卤化物气体和/或卤素气体。 在化合物生长的同时，向反应气氛中加入痕量的卤化物和/或卤素气体，所述卤化物和/或卤素气体不含待生长的化合物的母体元素，例如HCl，从而使其成为 可能使异质结界面变平或影响高质量晶体的生长，而不会在宽范围的掩模上沉积多晶体。