公开(公告)号：US20140187049A1

公开(公告)日：2014-07-03

申请号：US14198211

申请日：2014-03-05

Applicant: Lam Research Corporation

Inventor： Jason Augustino ,  Anthony de la Llera ,  Allan K. Ronne ,  Jaehyun Kim ,  Rajinder Dhindsa ,  Yen-Kun Wang ,  Saurabh J. Ullal ,  Anthony J. Norell ,  Keith Comendant ,  William M. Denty, JR.

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  C23C16/45565 ,  C23C16/45582 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/67017

Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.

Abstract translation: 提供了一种用于等离子体处理装置的喷头电极组件。 喷头电极组件包括附接到第二构件的第一构件。 第一和第二构件具有流体连通的第一和第二气体通道。 当处理气体流过气体通道时，跨越第一和第二气体通道产生总压降。 跨越第二气体通道的总压降的一小部分大于跨越第一气体通道的总压降的一部分。

公开(公告)号：US20140154888A1

公开(公告)日：2014-06-05

申请号：US14170732

申请日：2014-02-03

Applicant: Lam Research Corporation

Inventor： Tom Stevenson ,  Rajinder Dhindsa

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  H01L21/67069

Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

Abstract translation: 公开了一种喷头电极组件，其包括适于安装在真空室内部的喷头电极; 连接到喷头电极的可选背板; 热控制板，其在跨过所述背板的多个接触区域附接到所述背板或所述喷头电极; 以及至少一个界面构件，其在所述接触区域处分离所述背板和所述热控制板或所述热控制板和喷头电极，所述界面构件具有导热和导电的垫圈部分和颗粒减轻密封部分。 还公开了使用喷头电极组件处理半导体衬底的方法。

公开(公告)号：US20140127911A1

公开(公告)日：2014-05-08

申请号：US13670940

申请日：2012-11-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  Rajinder Dhindsa ,  Travis Taylor ,  John Daugherty

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/3065 ,  C25D7/04 ,  C25D7/00

CPC classification number: H01L21/67069 ,  C23C16/4404 ,  C23C18/42 ,  C25D3/60 ,  C25D5/44 ,  C25D7/02 ,  C25D7/04 ,  H01J37/32477 ,  Y10T428/1259 ,  Y10T428/1275

Abstract: A palladium plated aluminum component of a semiconductor plasma processing chamber comprises a substrate including at least an aluminum or aluminum alloy surface, and a palladium plating on the aluminum or aluminum alloy surface of the substrate. The palladium plating comprises an exposed surface of the component and/or a mating surface of the component.

Abstract translation: 半导体等离子体处理室的镀钯铝部件包括至少包含铝或铝合金表面的基板和在基板的铝或铝合金表面上的镀钯。 钯镀层包括部件的暴露表面和/或部件的配合表面。

公开(公告)号：US20130126518A1

公开(公告)日：2013-05-23

申请号：US13671255

申请日：2012-11-07

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa

IPC: H05B3/03

CPC classification number: H05B3/03 ,  H01J37/32091 ,  H01J37/32724

Abstract: A temperature control module for a showerhead electrode assembly for a semiconductor material plasma processing chamber includes a heater plate adapted to be secured to a top surface of a top electrode of the showerhead electrode assembly, and which supplies heat to the top electrode to control the temperature of the top electrode; a cooling plate adapted to be secured to and thermally isolated from a surface of a top plate of the showerhead electrode assembly, and to cool the heater plate and control heat conduction between the top electrode and heater plate; and at least one thermal choke adapted to control heat conduction between the heater plate and cooling plate.

Abstract translation: 一种用于半导体材料等离子体处理室的喷头电极组件的温度控制模块，包括适于固定到喷头电极组件的顶部电极的顶表面的加热板，并且向顶部电极供应热量以控制温度 的顶部电极; 适于固定到喷头电极组件的顶板的表面并与之隔离的冷却板，并且冷却加热板并控制顶部电极和加热板之间的热传导; 以及至少一个适于控制加热器板和冷却板之间的热传导的热扼流圈。

公开(公告)号：US10553399B2

公开(公告)日：2020-02-04

申请号：US15011112

申请日：2016-01-29

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.

公开(公告)号：US10332727B2

公开(公告)日：2019-06-25

申请号：US15877092

申请日：2018-01-22

Applicant: Lam Research Corporation

Inventor： Richard Gottscho ,  Rajinder Dhindsa ,  Mukund Srinivasan

IPC: H01L21/687 ,  H01J37/32 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/513 ,  H01L21/67

Abstract: A plasma processing method is provided. The method includes receiving a substrate in a substrate support that is configured to be movable along a linear path. The method includes providing at least one process gas into a plasma microchamber. The plasma microchamber is disposed in a processing head having a length that is at least longer than a diameter of the substrate, and said length is perpendicular to said linear path. The method includes generating a plasma in the plasma microchamber by applying power to the plasma microchamber and applying a bias power to the substrate support. The plasma microchamber has an open side process area that is oriented and directed over a surface to be processed, and the open side process area is less than an area of the surface to be processed. The method includes translating said substrate support along said linear path while said microchamber generates the plasma in the plasma microchamber for exposing said plasma over the substrate. The translating of said substrate support along the linear path while generating said plasma via said microchamber provides for exposing said plasma across the substrate. The plasma is used for either depositing or etching a material.

公开(公告)号：US10249476B2

公开(公告)日：2019-04-02

申请号：US15133049

申请日：2016-04-19

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

IPC: H01J37/32

Abstract: A system for controlling an impedance of a radio frequency (RF) return path includes a matchbox further including a match circuitry. The system further includes an RF generator coupled to the matchbox to supply an RF supply signal to the matchbox via a first portion of an RF supply path. The RF generator is coupled to the matchbox to receive an RF return signal via a first portion of an RF return path. The system also includes a switch circuit and a plasma reactor coupled to the switch circuit via a second portion of the RF return path. The plasma reactor is coupled to the match circuitry via a second portion of the RF supply path. The system includes a controller coupled to the switch circuit, the controller configured to control the switch circuit based on a tune recipe to change an impedance of the RF return path.

公开(公告)号：US20170330735A1

公开(公告)日：2017-11-16

申请号：US15669742

申请日：2017-08-04

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Akira Koshishi ,  Alexei Marakhatanov

IPC: H01J37/32

Abstract: An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner lower radius, and the lower horizontal section further includes a plurality of slots. The confinement ring further includes an upper horizontal section extending between an inner upper radius and the outer radius of the confinement ring and a vertical section that integrally connects the lower horizontal section with the upper horizontal section. The extension section of the lower horizontal section is configured to surround the lower electrode when installed in the plasma processing chamber.

公开(公告)号：US09793128B2

公开(公告)日：2017-10-17

申请号：US14491531

申请日：2014-09-19

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Andrew D. Bailey, III

IPC: H01L21/3065 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/31

CPC classification number: H01L21/3065 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/31

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

公开(公告)号：US20160307738A1

公开(公告)日：2016-10-20

申请号：US15194452

申请日：2016-06-27

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

Abstract translation: 等离子体系统包括RF发生器和包括阻抗匹配电路的火柴盒，其通过RF电缆耦合到RF发生器。 等离子体系统包括通过RF线耦合到火柴盒的卡盘和等离子体反应器。 RF线形成RF供应路径的一部分，RF供应路径在RF发生器之间通过火柴盒和卡盘延伸。 等离子体系统还包括耦合到阻抗匹配电路和卡盘之间的RF供给路径的相位调整电路。 相位调整电路具有耦合到RF供给路径的一端和接地的另一端。 等离子体系统包括耦合到相位调整电路的控制器。 控制器用于改变相位调整电路的参数，以基于调谐配方控制RF供应路径的阻抗。