公开(公告)号：US20060108596A1

公开(公告)日：2006-05-25

申请号：US11274422

申请日：2005-11-16

申请人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Yuji Abe

发明人： Katsuomi Shiozawa ,  Toshiyuki Oishi ,  Kazushige Kawasaki ,  Yuji Abe

IPC分类号： H01L33/00

CPC分类号： H01L21/28575 ,  H01L33/32 ,  H01L33/40

摘要： A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.

摘要翻译： P型电极材料设置在P型接触层的顶表面上。 P型电极材料由AuGa膜，Au膜，Pt膜和Au膜形成。 AuGa膜设置在P型接触层上。 Au膜设置在AuGa膜上。 Pt膜设置在Au膜上。 Au膜设置在Pt膜上。 由此，可以获得具有能够降低P型接触层与P型电极之间的接触电阻的P型电极的氮化物半导体器件。

公开(公告)号：US06617654B2

公开(公告)日：2003-09-09

申请号：US09955488

申请日：2001-09-19

申请人： Toshiyuki Oishi ,  Kohei Sugihara ,  Naruhisa Miura ,  Yuji Abe ,  Yasunori Tokuda

发明人： Toshiyuki Oishi ,  Kohei Sugihara ,  Naruhisa Miura ,  Yuji Abe ,  Yasunori Tokuda

IPC分类号： H01L2976

CPC分类号： H01L29/66628 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7834

摘要： Source and drain regions include regions of an epitaxial silicon film on the surface of the substrate and regions in the substrate. The depth of junctions of the source and drain regions is identical to or shallower than the depth of junctions of extension regions. As a result, even if the thickness of the side wall layer is reduced, since the depletion layer of the extension regions with lower impurity concentration compared with the source and drain regions is predominant, the short channel effect has a smaller effect.

摘要翻译： 源区和漏区包括在衬底的表面上的外延硅膜的区域和衬底中的区域。 源极和漏极区域的结的深度与延伸区域的接合点的深度相同或更浅。 结果，即使侧壁层的厚度减小，由于与源极和漏极区域相比，杂质浓度较低的延伸区域的耗尽层是主要的，所以短沟道效应具有较小的效果。

公开(公告)号：US06465851B1

公开(公告)日：2002-10-15

申请号：US08948260

申请日：1997-10-09

申请人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yuji Abe

发明人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yuji Abe

IPC分类号： H01L2976

CPC分类号： H01L21/31658 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/31662 ,  H01L21/32105 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76888 ,  H01L21/76889 ,  H01L27/10814 ,  H01L27/10844 ,  H01L27/10855 ,  H01L27/10888 ,  Y10S438/906

摘要： Epitaxial silicon layers are formed on n+-source/drain regions of two MOS transistors neighboring to each other and formed on a silicon substrate, respectively. In this processing, polycrystalline silicon pieces are generated on an element isolating and insulating film and others. Thereafter, the silicon substrate is exposed to an oxygen atmosphere so that hydrogen reacts with silicon at the surfaces of the epitaxial silicon layers and the surfaces of the polycrystalline silicon pieces to form silicon oxide films and polycrystalline silicon pieces. Thereby, short-circuit between MOS transistors in neighboring memory cells is prevented, and a semiconductor device has a high electrical reliability.

摘要翻译： 外延硅层分别形成在两个相邻的MOS晶体管的n +源极/漏极区上，并形成在硅衬底上。 在该处理中，在元件隔离和绝缘膜等上产生多晶硅片。 此后，将硅衬底暴露于氧气氛，使得氢在外延硅层的表面和多晶硅片的表面与硅反应，以形成氧化硅膜和多晶硅片。 由此，防止了相邻存储单元中的MOS晶体管之间的短路，并且半导体器件具有高的电可靠性。

公开(公告)号：US5540345A

公开(公告)日：1996-07-30

申请号：US172824

申请日：1993-12-27

申请人： Hiroshi Sugimoto ,  Teruhito Matsui ,  Ken-ichi Ohtsuka ,  Yuji Abe ,  Toshiyuki Ohishi

发明人： Hiroshi Sugimoto ,  Teruhito Matsui ,  Ken-ichi Ohtsuka ,  Yuji Abe ,  Toshiyuki Ohishi

IPC分类号： G02B6/12 ,  G02B6/124 ,  G03F7/00 ,  H01S5/12 ,  H01L21/308 ,  C03C15/00

CPC分类号： G02B6/124 ,  G03F7/001 ,  G02B2006/12176 ,  G02B2006/12178 ,  H01S5/1231 ,  Y10S359/90

摘要： A process of producing a diffraction grating includes the steps of forming a coating layer on a first diffraction grating layer of a resin formed on a substrate without damaging the diffraction grating layer, removing a portion of the coating layer positioned on the first diffraction grating layer by etching to form a second diffraction grating layer of the coating layer having the reverse phase to that of the first diffraction grating layer, removing the first diffraction grating layer, and etching the substrate with a mask of the second diffraction grating layer, so that the diffraction grating having the reverse phase can be easily produced. When the first diffraction grating layer is left and both the first and second diffraction grating layers are used as a mask, the diffraction grating having a period half times as large as that of the first grating layer can be easily produced.

摘要翻译： 制造衍射光栅的方法包括以下步骤：在不损坏衍射光栅层的基板上形成的树脂的第一衍射光栅层上形成涂层，通过以下步骤除去位于第一衍射光栅层上的涂层的一部分： 蚀刻以形成具有与第一衍射光栅层的相反相位的涂层的第二衍射光栅层，去除第一衍射光栅层，并用第二衍射光栅层的掩模蚀刻衬底，使得衍射 具有反相的光栅可以容易地产生。 当剩下第一衍射光栅层并且将第一和第二衍射光栅层都用作掩模时，可以容易地产生具有与第一光栅层的周期相同的半周期的衍射光栅。

公开(公告)号：US5306925A

公开(公告)日：1994-04-26

申请号：US17296

申请日：1993-02-12

申请人： Yuji Abe ,  Yasunori Tokuda

发明人： Yuji Abe ,  Yasunori Tokuda

IPC分类号： G02F1/35 ,  G02F3/02 ,  H01L31/105 ,  H01L33/00

CPC分类号： G02F3/028 ,  H01L31/105

摘要： According to the present invention, there is provided a nonlinear optical element including a p-i-n type photodiode (i layer is a light absorbing layer) provided with a barrier layer preventing the going-through of a majority carrier. In the nonlinear optical element of the present invention, since the charges are accumulated with the stop of carrier moving, there occur a deformation in energy band and change in internal electric field. Optical bistability can be attained even without an external circuit. Further, with a plurality of incident light, only one element can exhibit optical bistability therefor because there is no need to dispose an external circuit. According to a method of the present invention, it is possible to control bistability for one light by overlapping another light input to a carrier diffusing region generated by the one light.

摘要翻译： 根据本发明，提供一种非线性光学元件，其包括设置有防止多数载体的通孔的阻挡层的p-i-n型光电二极管（i层是光吸收层）。 在本发明的非线性光学元件中，由于电荷在载流子移动停止时累积，所以能带内发生变形，内部电场发生变化。 即使没有外部电路，也可以获得光学双稳态。 此外，利用多个入射光，只有一个元件可以表现出光学双稳定性，因为不需要设置外部电路。 根据本发明的方法，通过将另一个光输入重叠到由一个光产生的载流子扩散区域，可以控制一个光的双稳态。

公开(公告)号：US4914525A

公开(公告)日：1990-04-03

申请号：US193277

申请日：1988-05-11

申请人： Yuji Abe ,  Kenji Sakaue ,  Masahiro Hashizume ,  Taiichi Jinno ,  Kazuo Nakamura ,  Katsumi Nagata

发明人： Yuji Abe ,  Kenji Sakaue ,  Masahiro Hashizume ,  Taiichi Jinno ,  Kazuo Nakamura ,  Katsumi Nagata

IPC分类号： G03G15/04 ,  H04N1/00 ,  H04N1/04 ,  H04N1/10 ,  H04N1/107 ,  H04N1/12 ,  H04N1/19 ,  H04N1/193

CPC分类号： H04N1/00554 ,  H04N1/00519 ,  H04N1/0057 ,  H04N1/00588 ,  H04N1/00591 ,  H04N1/00602 ,  H04N1/00623 ,  H04N1/1008 ,  H04N1/121 ,  H04N1/0464 ,  H04N1/193 ,  Y10T292/0913 ,  Y10T292/0915 ,  Y10T292/0917 ,  Y10T292/0936

摘要： An image processing machine functions both as a facsimile machine and as an ordinary copying machine. The image processing machine is provided with a document scanning system and image-forming system. The document scanning system comprises a first scanning zone, a second scanning zone an image-receiving system, an optical system for optically connecting the first scanning zone and the second scanning zone to the image-receiving system, a first document scan moving system for moving a document across the first scanning zone and a second document scan moving system for moving a document across the second scanning zone. The image-forming system comprises printing system with a print output zone and a system for conveying a printing substrate through the printing output zone. An ink ribbon cartridge in the image forming system has a detector for detecting a broken ink ribbon.

公开(公告)号：US4647178A

公开(公告)日：1987-03-03

申请号：US693945

申请日：1985-01-23

申请人： Kouichi Sasaki ,  Hideaki Tsudaka ,  Satoshi Namba ,  Yuji Abe ,  Shinsuke Yoshinaga

发明人： Kouichi Sasaki ,  Hideaki Tsudaka ,  Satoshi Namba ,  Yuji Abe ,  Shinsuke Yoshinaga

IPC分类号： G03B27/50 ,  G03G15/00 ,  G03G15/04 ,  G03G21/16

CPC分类号： G03G15/04 ,  G03G21/1619 ,  G03G15/0435 ,  G03G2221/1636 ,  G03G2221/1651 ,  G03G2221/1654 ,  G03G2221/1678

摘要： A unit-type copying machine comprising an upper unit having an optical system for exposing a document to light by scanning, and a lower unit provided independently of the upper unit and having a photoconductive drum to be exposed to an image of the document projected thereon from the optical system. The upper and lower units are provided with connecting portions for detachably connecting the two units together and positioning portions for positioning the optical path of projection of the document image from the optical system in coincidence with an exposure station for the drum. The upper or lower unit is usable with selected one of different types of lower units or of different types of upper units in a suitable combination.

摘要翻译： 一种单元型复印机，包括具有用于通过扫描将文件暴露于光的光学系统的上部单元，以及独立于上部单元设置并具有感光鼓以暴露于其上投影的文件的图像的下部单元 光学系统。 上下单元设置有用于将两个单元可拆卸地连接在一起的连接部分和用于将文档图像的投影光路从光学系统定位的定位部分与用于滚筒的曝光站重合。 上部或下部单元可以选择一种不同类型的下部单元或不同类型的上部单元以合适的组合使用。

公开(公告)号：US09121105B2

公开(公告)日：2015-09-01

申请号：US13639322

申请日：2011-04-06

申请人： Nobuo Kadowaki ,  Hironori Nakayama ,  Yuji Abe

发明人： Nobuo Kadowaki ,  Hironori Nakayama ,  Yuji Abe

IPC分类号： C25D5/36 ,  C25D5/34 ,  C25D9/08 ,  C25D3/54 ,  C25F1/02

CPC分类号： C25D9/08 ,  C25D3/54 ,  C25D5/36 ,  C25F1/02 ,  Y10T428/12611

摘要： A method for the cathodic electrocoating of a tin-coated steel sheet in a treatment solution that does not contain any Cr compound, F or nitrite nitrogen. A tin oxide layer that is not subjected to a cathodic electrocoating treatment yet and is arranged on a tin-coated steel sheet is thinned to a specified thickness or less by a cathodic electrocoating treatment in an aqueous solution containing sodium carbonate or sodium hydrogen carbonate or an aqueous sulfuric acid solution immersion treatment, and the tin oxide layer is subjected to a cathodic electrocoating treatment in an aqueous solution of an alkaline metal sulfate containing a zirconium compound having a specified composition. In this manner, a coating film is formed on the tin oxide layer at a specific adhered amount in terms of Zr content.

摘要翻译： 在不含任何Cr化合物，F或亚硝酸盐氮的处理溶液中的镀锡钢板的阴极电涂覆方法。 未经阴极电涂覆处理而设置在镀锡钢板上的氧化锡层通过阴极电泳处理在含有碳酸钠或碳酸氢钠的水溶液中稀释至规定厚度以下 硫酸水溶液浸渍处理，氧化锡层在含有具有规定组成的锆化合物的碱金属硫酸盐水溶液中进行阴极电泳处理。 以这种方式，在氧化锡层上以特定的附着量以Zr含量形成涂膜。

公开(公告)号：US20150048384A1

公开(公告)日：2015-02-19

申请号：US14387727

申请日：2013-02-26

申请人： Rina Tanaka ,  Akihiko Furukawa ,  Masayuki Imaizumi ,  Yuji Abe

发明人： Rina Tanaka ,  Akihiko Furukawa ,  Masayuki Imaizumi ,  Yuji Abe

IPC分类号： H01L29/16 ,  H01L29/47 ,  H01L29/872

CPC分类号： H01L29/1608 ,  H01L29/0619 ,  H01L29/36 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/872

摘要： In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode.

摘要翻译： 在使用宽带隙半导体的JBS二极管中，宽带隙半导体具有大的内置电压，这有时使pn二极管部分导通困难，导致不能充分确保对浪涌电流的抵抗力的问题 。 为了解决这个问题，在宽带隙JBS二极管中，pn二极管的pn结远离肖特基电极形成，阱区形成为在远离 肖特基电极。

公开(公告)号：US08443581B2

公开(公告)日：2013-05-21

申请号：US13125014

申请日：2009-10-19

申请人： Naruki Koshimizu ,  Yuji Abe ,  Toshimi Habasaki ,  Tetsuya Hayashi

发明人： Naruki Koshimizu ,  Yuji Abe ,  Toshimi Habasaki ,  Tetsuya Hayashi

IPC分类号： D02G3/22

CPC分类号： G02B6/02285 ,  B65H51/10 ,  B65H59/385 ,  B65H59/40 ,  B65H2701/32

摘要： An optical fiber producing method and apparatus for producing an optical fiber in which, in a path where an optical fiber is reeled out from a supply bobbin, taken up by take-up means, and wound by a winding bobbin, twists are alternately imparted to the optical fiber by a twist imparting portion. A zone where a high tension load is allowed to be applied to the optical fiber without affecting winding tension of the winding bobbin is disposed, a twist is imparted in the zone, and, when tension immediately before the twist imparting portion is indicated by T (g), a free path length is indicated by L, a twisting amount is indicated by R (turns/m), and a and b are constants, the tension and free path length by which the twisting amount R approximated by “R=a×T×Lb” is made “2” or more are set.

摘要翻译： 一种光纤的制造方法及其制造方法，其特征在于，在将光纤从供给线轴卷出的路径中，由卷取机构卷绕并卷绕在卷取筒管上， 光纤通过扭曲赋予部分。 在不影响卷绕筒管的卷绕张力的情况下，设置能够对光纤施加高张力负荷的区域，在该区域内施加扭曲，并且在扭曲赋予部分之前的张力被T（ g），自由路径长度用L表示，扭转量由R（匝数/ m）表示，a和b是常数，由R = a近似的扭转量R的张力和自由路径长度 ×T×Lb“为”2“以上。