公开(公告)号：US20050026392A1

公开(公告)日：2005-02-03

申请号：US10872905

申请日：2004-06-21

申请人： Holger Jurgensen ,  Alois Krost ,  Armin Dadgar

发明人： Holger Jurgensen ,  Alois Krost ,  Armin Dadgar

IPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L21/30 ,  H01L21/46

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02455 ,  H01L21/02463 ,  H01L21/02538 ,  H01L21/0262

摘要： The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out the crystalline deposition of thick III-V semiconductor layers on a silicon substrate without the occurrence of unfavorable lattice distortions. To this end, the invention provides that a thin intermediate layer is deposited at a reduced growth temperature between two III-V layers.

摘要翻译： 本发明涉及通过将气态原料引入反应器的处理室中，在非III-V衬底，特别是硅衬底上沉积厚III-V半导体层的方法。 本发明的目的是在硅衬底上进行厚III-V半导体层的结晶沉积，而不会发生不利的晶格畸变。 为此，本发明提供了在两个III-V层之间以减小的生长温度沉积薄的中间层。

公开(公告)号：US20050025909A1

公开(公告)日：2005-02-03

申请号：US10872902

申请日：2004-06-21

申请人： Holger Jurgensen ,  Alois Krost ,  Armin Dadgar

发明人： Holger Jurgensen ,  Alois Krost ,  Armin Dadgar

IPC分类号： H01L21/20 ,  H01S5/02 ,  H01S5/323 ,  A41G1/00

CPC分类号： H01S5/32341 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01S5/021

摘要： The invention relates to a method for the production of III-V laser components, whereby a III-V semiconductor layer is deposited on a silicon substrate in a process chamber of a reactor from a gaseous starting material. According to the invention, an economical method for the production of qualitatively high-grade laser may be achieved whereby, firstly, an Al-containing buffer layer is deposited on the Si substrate, in particular a Si(III) substrate, on which the III-V semiconductor layer, in particular, GaN is then deposited such that the lattice plane thereof runs parallel to the cleavage direction of the substrate, whereby, on cleaving the substrate plane-parallel layer, cleavage surfaces are formed.

摘要翻译： 本发明涉及一种用于生产III-V激光器部件的方法，其中III-V半导体层从气态起始材料沉积在反应器的处理室中的硅衬底上。 根据本发明，可以实现用于生产定性高等级激光器的经济方法，其中首先，在Si衬底上，特别是Si（III）衬底上沉积含Al缓冲层，其中III -V半导体层，特别是GaN沉积，使得其晶格面平行于衬底的解理方向延伸，由此，在切割衬底平面平行层时，形成解理面。

公开(公告)号：US4903722A

公开(公告)日：1990-02-27

申请号：US330501

申请日：1989-03-30

申请人： Frank Joseph ,  Holger Jurgensen

发明人： Frank Joseph ,  Holger Jurgensen

IPC分类号： F16K11/22 ,  F16K1/30 ,  F16K11/20 ,  F16K41/12

CPC分类号： F16K1/302 ,  F16K11/20 ,  F16K41/12 ,  Y10T137/3127 ,  Y10T137/87338

摘要： An extraction valve head for a tank for high-purity and/or toxic liquid chemicals has an inlet valve for a filler gas, an outlet valve and a purging valve, which closes a bypass between a gas inlet line and an extraction line. The valves are configured as metal diaphragm valves and are fitted in a common metallic valve housing block. All valve seals of the valves are arranged in close spatial proximity to one another in the valve housing block.

摘要翻译： 用于高纯度和/或有毒液体化学品的罐的提取阀头具有用于填充气体的入口阀，出口阀和清洗阀，其关闭气体入口管线和抽吸管线之间的旁路。 阀被配置为金属隔膜阀，并安装在普通的金属阀外壳块中。 阀的所有阀密封件在阀壳体块中彼此紧密地布置成彼此紧密。

公开(公告)号：US07201942B2

公开(公告)日：2007-04-10

申请号：US10215858

申请日：2002-08-09

申请人： Holger Jurgensen ,  Johannes Kappeler ,  Gerd Strauch ,  Dietmar Schmitz

发明人： Holger Jurgensen ,  Johannes Kappeler ,  Gerd Strauch ,  Dietmar Schmitz

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C14/0015 ,  C23C14/12 ,  C23C14/22 ,  C23C14/228 ,  C23C16/006 ,  C23C16/4481 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572

摘要： A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.

摘要翻译： 公开了一种用于生产涂覆的基材例如OLED的方法，其中至少一层通过冷凝法和固体和/或流体前体沉积在至少一个基底上，特别是至少一个 一个升华源用于至少一部分反应气体。 本发明的特征在于，通过对前体源和基底之间的反应气体的温度控制，避免了反应气体在基底之前的冷凝。

公开(公告)号：US07056388B2

公开(公告)日：2006-06-06

申请号：US10269157

申请日：2002-10-11

申请人： Walter Franken ,  Gerd Strauch ,  Johannes Kappeler ,  Holger Jurgensen

发明人： Walter Franken ,  Gerd Strauch ,  Johannes Kappeler ,  Holger Jurgensen

IPC分类号： C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32577

摘要： A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combination of the following features: a support plate with coolant channels, and at least one opening for an HF line; an HF line collar in the zone disposed in the reaction chamber, a first seal on the collar; a first disc from an insulating material between a second seal on the support plate and the first seal on the collar; a thread in the zone outside the reaction chamber, a screw element being screwed onto the thread, all configured to prevent an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.

摘要翻译： 公开了一种用于进行基底涂布方法的反应室，在至少一个外壁中具有至少一个开口，其中HF馈通以压力或真空密封方式插入。 反应室的特征还在于以下特征的组合：具有冷却剂通道的支撑板和用于HF线的至少一个开口; 设置在反应室中的区域中的HF线圈，在轴环上的第一密封; 在所述支撑板上的第二密封件和所述套环上的第一密封件之间的绝缘材料的第一盘; 在反应室外的区域中的螺纹，螺纹元件螺纹连接到螺纹上，所有螺纹元件都被构造成防止HF线和支撑板之间的电接触被建立或在HF线和支撑板之间产生电弧 。

公开(公告)号：US20050106864A1

公开(公告)日：2005-05-19

申请号：US10922701

申请日：2004-08-20

申请人： Holger Jurgensen ,  Gerhard Strauch

发明人： Holger Jurgensen ,  Gerhard Strauch

IPC分类号： C23C16/00 ,  C23C16/46 ,  C30B25/14 ,  H01L21/285 ,  H01L21/44

CPC分类号： H01L21/28525 ,  C23C16/46 ,  C30B25/14

摘要： The invention relates to a device for carrying out a method wherein the process gases are introduced via a common gas inlet element (D) into the process chamber in which a substrate holder (S) is arranged. The gas inlet element has a gas outlet surface which is tempered and which possesses a plurality of gas outlets like a sieve. The substrate holder extends parallel to the gas outlet surface on a horizontal plane and is rotationally driven about a vertical axis. The distance between the substrate holder and the gas outlet surface is not greater than 75 mm. A gas supply device for the reactive gases consisting of at least one metal-organic compound and at least one hydride in addition to another gas is also provided. The isotherms extending above the substrate holder become increasingly flatter as the distance from the gas inlet element becomes smaller, thereby resulting in a higher degree of isothermic homogeneity.

摘要翻译： 本发明涉及一种用于执行方法的装置，其中处理气体经由公共气体入口元件（D）引入到其中布置有衬底保持器（S）的处理室中。 气体入口元件具有回火的气体出口表面，并且具有多个诸如筛子的气体出口。 衬底保持器在水平面上平行于气体出口表面延伸并且围绕垂直轴旋转地驱动。 衬底保持器和气体出口表面之间的距离不大于75mm。 还提供了用于由至少一种金属 - 有机化合物和至少一种氢化物组成的反应性气体的气体供应装置以及另一种气体。 随着与气体入口元件的距离变小，在衬底支架上方延伸的等温线变得越来越平坦，从而导致更高程度的等温均匀性。

公开(公告)号：US5348911A

公开(公告)日：1994-09-20

申请号：US51792

申请日：1993-04-26

申请人： Holger Jurgensen ,  Klaus Gruter ,  Marc Deschler ,  Pieter Balk

发明人： Holger Jurgensen ,  Klaus Gruter ,  Marc Deschler ,  Pieter Balk

IPC分类号： B01D7/02 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  H01L21/205

CPC分类号： C30B25/02 ,  B01D7/02 ,  C23C16/45557 ,  C30B29/40 ,  C30B29/42

摘要： Disclosed is a process for fabricating mixed crystals and, in particular, III-V semiconductors, in which at least one component of the composition of the mixed crystal is transferred in a reactor from a source into a vapor phase containing hydrogen and chloride compounds as well as a carrier gas and mixed with said component or other components of said composition of said mixed crystal, transported to a substrate and precipitated on said substrate. The invented process is distinguished in that in order to vary the growth rate between approximately 1

摘要翻译： 公开了一种制造混晶，特别是III-V族半导体的方法，其中将混合晶体组合物的至少一种组分从反应器中转移到含氢和氯化物的气相中 作为载气并与所述组合物的所述组分或所述混合晶体的其它组分混合，输送到基底并沉淀在所述基底上。 本发明的方法的区别在于，为了改变约1m / h至约500m / h之间的生长速率，总压力在约80mbar和约1mbar之间变化。

公开(公告)号：US5162256A

公开(公告)日：1992-11-10

申请号：US646794

申请日：1991-01-31

申请人： Holger Jurgensen

发明人： Holger Jurgensen

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/203 ,  H01L21/22 ,  H01L21/225

CPC分类号： H01L21/2258 ,  H01L21/22 ,  Y10S148/037 ,  Y10S438/933

摘要： A multiplicity of thin layers are applied on top of each other having alternately comparatively high concentrations of charge carriers and no doping. The thickness and the concentration of charge carriers of the individual layers being are proportioned in such a manner that the desired low concentration of charge carriers is yielded by averaging the multiplicity of layers.

摘要翻译： PCT No.PCT / DE90 / 00425 Sec。 371日期1991年1月31日 102（e）日期1991年1月31日PCT Filed 1990年6月2日PCT公布。 出版物WO90 / 15435 日期为1990年12月13日。多个薄层施加在具有交替相对较高浓度的电荷载流子并且不掺杂的彼此之上。 各层的电荷载流子的厚度和浓度按照这样的方式成比例，即通过对多个层进行平均而产生期望的低浓度电荷载流子。

公开(公告)号：US07033921B2

公开(公告)日：2006-04-25

申请号：US10872920

申请日：2004-06-21

申请人： Holger Jurgensen

发明人： Holger Jurgensen

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406

摘要： The invention relates to a method and device for depositing several crystalline semiconductor layers on at least one semiconductor crystalline substrate. According to said method, gaseous parent substances are introduced into a process chamber of a reactor by means of a gas inlet organ, said substances accumulating, optionally after a chemical gas phase and/or surface reaction, on the surface of a semiconductor substrate that is placed on a substrate holder in the process chamber, thus forming the semiconductor layer. Said semiconductor layer and the semiconductor substrate form a crystal consisting of either one or several elements from main group V, elements from main groups III and V, or elements from main groups II and VI. In a first process step for depositing a first semiconductor layer, a first process gas consisting of one or several first parent substances is introduced into the process chamber, the decomposition products of said gas forming the crystal of a first semiconductor layer and small quantities of a second parent substance can be introduced into the process chamber in order to dope the first semiconductor layer. The invention is characterized in that in a second process step, prior to or after the first process step, a second process gas, which contains the second parent substance and optionally additional gases, is introduced into said process chamber in order to deposit a second semiconductor layer, the decomposition products of said gas forming a second semiconductor layer, having a crystal that differs from that of the first semiconductor layer, whereby small quantities of a first parent substance can be introduced into the process chamber in order to dope the second semiconductor layer.

摘要翻译： 本发明涉及一种用于在至少一个半导体晶体衬底上沉积多个晶体半导体层的方法和装置。 根据所述方法，气态母体物质通过气体入口器官引入反应器的处理室中，所述物质任选地在化学气相和/或表面反应之后积聚在半导体衬底的表面上 放置在处理室中的衬底保持器上，从而形成半导体层。 所述半导体层和半导体衬底形成由主族V中的一种或几种元素，主要组III和V的元素或主要基团II和VI的元素组成的晶体。 在用于沉积第一半导体层的第一工艺步骤中，将由一种或几种第一母体物质组成的第一工艺气体引入处理室中，形成第一半导体层的晶体的所述气体的分解产物和少量的 可以将第二母体物质引入处理室以便掺杂第一半导体层。 本发明的特征在于，在第二工艺步骤中，在第一工艺步骤之前或之后，将含有第二母体物质和任选的附加气体的第二工艺气体引入所述处理室中，以沉积第二半导体 层，形成第二半导体层的所述气体的分解产物具有不同于第一半导体层的晶体，由此可以将少量的第一母体物质引入处理室以便掺杂第二半导体层 。

公开(公告)号：US20050109281A1

公开(公告)日：2005-05-26

申请号：US10946768

申请日：2004-09-22

申请人： Holger Jurgensen ,  Michael Heuken

发明人： Holger Jurgensen ,  Michael Heuken

IPC分类号： C23C14/12 ,  C23C14/22 ,  C23C16/00

CPC分类号： C23C14/228 ,  C23C14/12 ,  C23C14/22

摘要： The invention relates to a method and a device for coating at least one substrate with a thin layer in a processing chamber of a reactor. A solid or liquid starting material stored at least in a reservoir is guided into the processing chamber as a gas or an aerosol by means of a carrier gas, where it is condensed on the substrate. The solid or liquid starting material is maintained at a source temperature which is higher than the substrate temperature. In order to enable a targeted adjustment of the composition, sequence of layers and properties of the contact surface which determine the properties of the components, the carrier gas flows through the starting material and the supply of the gaseous starting material to the processing chamber is controlled by means of at least one valve and one mass flow regulator.

摘要翻译： 本发明涉及一种用于在反应器的处理室中涂覆具有薄层的至少一个基材的方法和装置。 至少存储在储存器中的固体或液体起始材料通过载气被引导到作为气体或气溶胶的处理室中，在该处理室中被冷凝在基板上。 固体或液体原料保持在高于基板温度的源温度。 为了能够有针对性地调整确定组分性质的接触表面的组成，层序和性质，载气流过起始材料并且控制气体原料向处理室的供应被控制 通过至少一个阀和一个质量流量调节器。