Waveguide structure
    11.
    发明授权
    Waveguide structure 失效
    波导结构

    公开(公告)号:US07693384B2

    公开(公告)日:2010-04-06

    申请号:US12111884

    申请日:2008-04-29

    CPC classification number: G02B6/12007

    Abstract: A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

    Abstract translation: 提供了一种波导结构。 波导结构包括:缝隙通道波导,包括第一和第二图案,它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数(TOC)乘以第二上层的TOC是负数。

    Nonbiased bistable optical device having a lower mirror having a
plurality of reflective layers repeatedly formed on a substrate
    12.
    发明授权
    Nonbiased bistable optical device having a lower mirror having a plurality of reflective layers repeatedly formed on a substrate 失效
    具有下反射镜的非偏置双稳态光学器件,其具有在基板上重复形成的多个反射层

    公开(公告)号:US5623140A

    公开(公告)日:1997-04-22

    申请号:US451059

    申请日:1995-05-25

    CPC classification number: G02F3/028

    Abstract: Disclosed is a nonbiased bistable optical device and a method for fabricating the device, which has a semi-insulating GaAs substrate; a lower mirror having a plurality of reflecting layers which are repeatedly formed on said substrate at least more than twelve times, each of said reflecting layers having a first reflecting film having a first refractive index on said substrate and a second reflecting film a second refractive index different from the first refractive index; a first contact layer formed on the lower mirror; a first buffer layer formed on the first contact layer; a multiple quantum well(MQW) having a plurality of shallow layers which are repeatedly formed, each of said shallow layers having a barrier and a shallow quantum well; a second buffer layer grown on said MQW; and a second contact layer formed on said second buffer layer. The device has an excellent bistablity even without an external applied voltage.

    Abstract translation: 公开了一种非偏置双稳态光学器件及其制造方法,该器件具有半绝缘GaAs衬底; 具有多个反射层的下反射镜,所述多个反射层在所述基板上反复形成至少十二次,每个所述反射层具有在所述基板上具有第一折射率的第一反射膜和第二反射膜,第二折射率 不同于第一折射率; 形成在下反射镜上的第一接触层; 形成在所述第一接触层上的第一缓冲层; 具有重复形成的多个浅层的多量子阱(MQW),每个所述浅层具有阻挡层和浅量子阱; 在所述MQW上生长的第二缓冲层; 以及形成在所述第二缓冲层上的第二接触层。 即使没有外部施加电压,该器件也具有优异的双稳态。

    Semiconductor optical devices and methods of fabricating the same
    13.
    发明授权
    Semiconductor optical devices and methods of fabricating the same 有权
    半导体光学器件及其制造方法

    公开(公告)号:US08804232B2

    公开(公告)日:2014-08-12

    申请号:US13307067

    申请日:2011-11-30

    Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

    Abstract translation: 半导体光学器件包括第一模式转换核心,光放大核心,第二模式转换核心和设置在第一模式转换区域中的光调制核心,光放大区域,第二模式转换区域和光调制 区域,以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心,光放大核心,第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置,并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一,第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂,并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

    Method of fabricating semiconductor device
    14.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07927988B2

    公开(公告)日:2011-04-19

    申请号:US12488577

    申请日:2009-06-21

    CPC classification number: H01L21/2007 H01L21/76251

    Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

    Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层,第二层,离子注入层和第二层上的抗氧化层,并进行热处理工艺以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。

    Photodetector for simultaneous recognition of multiple wavelengths, and
method therefor
    16.
    发明授权
    Photodetector for simultaneous recognition of multiple wavelengths, and method therefor 失效
    用于同时识别多个波长的光电探测器及其方法

    公开(公告)号:US6060704A

    公开(公告)日:2000-05-09

    申请号:US842870

    申请日:1997-04-17

    CPC classification number: B82Y20/00 H01L31/035236

    Abstract: For a multiple transmission communication system, how to individually isolate the transmitted lights and then to distribute to the terminals has been primary concerns to be solved. In the photodetector structure, an absorption layer may be configured as either multiple quantum well structures corresponding to operational wavelengths, or filter-based structure, allowing to select wavelengths in a 1:2:4:8 ratio as an absorptance for each wavelength. In case of using such four-fold lights, the determination as to which wavelength among four-fold wavelengths can be made based upon the total amounts of the current flow in such a photodetector. The photodetector employing such schemes is provided from the present invention.

    Abstract translation: 对于多传输通信系统,如何单独隔离发射的光,然后分发到终端,这是首要考虑的问题。 在光检测器结构中,吸收层可以被配置为对应于操作波长的多个量子阱结构或基于滤波器的结构,允许以1:2:4:8的比率选择波长作为每个波长的吸收率。 在使用这种四重光的情况下,可以基于这种光电检测器中的电流的总量来确定四倍波长中的哪个波长。 采用这种方案的光电探测器由本发明提供。

    Compact optical logic operator array
    17.
    发明授权
    Compact optical logic operator array 失效
    紧凑型光逻辑运算器阵列

    公开(公告)号:US5770851A

    公开(公告)日:1998-06-23

    申请号:US713535

    申请日:1996-09-13

    CPC classification number: G02F3/028 G02B6/43

    Abstract: An improved parallel optical logic operator provides a path for light to pass through substrates in which a light source and an optical logic device are arranged. An optical logic device operates by transmission of light forwarded to a predetermined direction. This increases integration efficiency of the system by eliminating optical parts for changing the light path. A unit chip includes a laser array for generating a predetermined light in accordance with an electrical signal for a logic process, a laser array substrate on which via holes are formed for passing light, a microlens array for converting the light beam emitted from each laser device of the laser array into a parallel light beam for passing through the via hole, and an optical logic circuit array formed with a combination of an S-SEED which performs a logic function by transmission of the light signal through an optical window in S-SEED. A plurality of unit chips are laminated so that the light emitted from the laser device of one of the unit chips passes through an optical logic circuit of a corresponding unit chip and can be made incident on the optical logic circuit in the next unit chip through a via hole.

    Abstract translation: 改进的并行光逻辑运算器提供光通过其中布置光源和光逻辑器件的衬底的路径。 光逻辑器件通过传输转发到预定方向的光来操作。 这通过消除用于改变光路的光学部件来提高系统的集成效率。 单元芯片包括用于根据用于逻辑处理的电信号产生预定光的激光阵列,其上形成有用于通过光的通孔的激光阵列基板,用于转换从每个激光装置发射的光束的微透镜阵列 的激光器阵列的平行光束通过通孔;以及光学逻辑电路阵列,其形成有S-SEED的组合,S-SEED通过S-SEED中的光学窗口传输光信号来执行逻辑功能 。 多个单位芯片被层叠,使得从单个芯片之一的激光装置发射的光通过相应的单元芯片的光学逻辑电路,并且可以通过一个单元芯片入射到下一个单元芯片中的光学逻辑电路上 通孔。

    Optical amplifier
    19.
    发明授权
    Optical amplifier 有权
    光放大器

    公开(公告)号:US08594469B2

    公开(公告)日:2013-11-26

    申请号:US12640627

    申请日:2009-12-17

    Abstract: An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.

    Abstract translation: 光放大器包括无源波导区域和有源波导区域。 无源波导区域被配置为接收入射光信号并调整光信号的模式。 有源波导区域被集成到无源波导区域,并被配置为响应于施加到有源波导区域的电流改变载波的密度,对从无源波导区域接收的光信号执行增益调制。 有源波导区域的内部损耗被调节以产生共振效应,从而增加有源波导的带宽。 因此,光放大器可以在低电流条件下具有宽带宽。

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