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143 条记录 (耗时 0.028 秒)

    Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes
    12.
    发明授权
    Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes 有权
    AlCalnN激光二极管的自对准，折射率引导，掩埋异质结构的结构和方法

    公开(公告)号：US06567443B2

    公开(公告)日：2003-05-20

    申请号：US09408415

    申请日：1999-09-29

    申请人： David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano ,  Thomas L. Paoli ,  Christian G. Van de Walle

    发明人： David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano ,  Thomas L. Paoli ,  Christian G. Van de Walle

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/2218 ,  H01S5/2222 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/34333

    摘要： A self aligned, index-guided, buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures. The comparatively large p-contact area allowed by the self-aligned architecture contributes to a lower diode voltage and less heat during continuous wave operation of the laser diode.

    摘要翻译： 与传统的脊波导结构相比，自对准，折射率引导，埋入异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。 短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。 与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。 自对准结构允许的较大的p接触面积有助于在激光二极管的连续波动操作期间较低的二极管电压和较少的热量。

    Algainn elog led and laser diode structures for pure blue or green emission
    14.
    发明授权
    Algainn elog led and laser diode structures for pure blue or green emission 有权
    Algainn elog led和激光二极管结构，用于纯蓝色或绿色发射

    公开(公告)号：US06345063B1

    公开(公告)日：2002-02-05

    申请号：US09363251

    申请日：1999-07-28

    申请人： David P. Bour ,  Linda T. Romano ,  Michael A. Kneissl

    发明人： David P. Bour ,  Linda T. Romano ,  Michael A. Kneissl

    IPC分类号： H01S319

    CPC分类号： H01L33/32 ,  H01L33/007

    摘要： Group III-V nitride semiconductors are used as optoelectronic light emitters. The semiconductor alloy InGaN is used as the active region in nitride laser diodes and LEDs, as its bandgap energy can be tuned by adjusting the alloy composition, to span the entire visible spectrum. InGaN layers of high-indium content, as required for blue or green emission are difficult to grow, however, because the poor lattice mismatch between GaN and InGaN causes alloy segregation. In this situation, the inhomogeneous alloy composition results in spectrally impure emission, and diminished optical gain. To suppress segregation, the high-indium-content InGaN active region may be deposited over a thick InGaN layer, substituted for the more typical GaN. First depositing a thick InGaN layer establishes a larger lattice parameter than that of GaN. Consequently, a high indium content heterostructure active region grown over the thick InGaN layer experiences significantly less lattice mismatch compared to GaN. Therefore, it is less likely to suffer structural degradation due to alloy segregation. Thus, the thick GaN structure enables the growth of a high indium content active region with improved structural and optoelectronic properties, leading to LEDs with spectrally pure emission, and lower threshold laser diodes.

    摘要翻译： III-V族氮化物半导体用作光电子发光体。 半导体合金InGaN用作氮化物激光二极管和LED中的有源区，因为其带隙能量可以通过调整合金组成来调整，以跨越整个可见光谱。 然而，蓝色或绿色发射所需的高铟含量的InGaN层难以生长，但是由于GaN和InGaN之间的不良晶格失配导致合金偏析。 在这种情况下，不均匀的合金组成导致光谱不纯的发射，并减少了光学增益。 为了抑制偏析，可以在厚的InGaN层上沉积高铟含量的InGaN有源区，代替更典型的GaN。 首先沉积厚的InGaN层形成比GaN更大的晶格参数。 因此，与GaN相比，在厚的InGaN层上生长的高铟含量的异质结构有源区域的晶格失配明显减少。 因此，由于合金分离而不太可能遭受结构劣化。 因此，厚的GaN结构能够增加具有改进的结构和光电性质的高铟含量活性区域，导致具有光谱纯发射的LED和较低阈值的激光二极管。

    Epitaxial Lift-Off and Wafer Reuse
    17.
    发明申请
    Epitaxial Lift-Off and Wafer Reuse 审中-公开
    外延提升和晶圆再利用

    公开(公告)号：US20120309172A1

    公开(公告)日：2012-12-06

    申请号：US13118900

    申请日：2011-05-31

    申请人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

    发明人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

    IPC分类号： H01L21/20

    CPC分类号： H01L21/2654 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/0079

    摘要： A method of reusing a III-nitride growth substrate according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor structure on a III-nitride substrate. The III-nitride semiconductor structure includes a sacrificial layer and an additional layer grown over the sacrificial layer. The sacrificial layer is implanted with at least one implant species. The III-nitride substrate is separated from the additional layer at the implanted sacrificial layer. In some embodiments the III-nitride substrate is GaN and the sacrificial layer is GaN, an aluminum-containing III-nitride layer, or an indium-containing III-nitride layer. In some embodiments, the III-nitride substrate is separated from the additional layer by etching the implanted sacrificial layer.

    摘要翻译： 根据本发明的实施例的重新使用III族氮化物生长衬底的方法包括在III族氮化物衬底上外延生长III族氮化物半导体结构。 III族氮化物半导体结构包括在牺牲层上生长的牺牲层和附加层。 牺牲层植入至少一种植入物种。 在注入的牺牲层处将III族氮化物衬底与附加层分离。 在一些实施例中，III族氮化物衬底是GaN，牺牲层是GaN，含铝的III族氮化物层或含铟的III族氮化物层。 在一些实施例中，通过蚀刻注入的牺牲层将III族氮化物衬底与附加层分离。

    Fabrication of group III-V nitrides on mesas
    19.
    发明授权
    Fabrication of group III-V nitrides on mesas 失效
    在台面上制备III-V族氮化物

    公开(公告)号：US06163557A

    公开(公告)日：2000-12-19

    申请号：US82154

    申请日：1998-05-21

    申请人： Clarence J. Dunnrowicz ,  Linda T. Romano ,  David P. Bour

    发明人： Clarence J. Dunnrowicz ,  Linda T. Romano ,  David P. Bour

    IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L31/0312 ,  H01S5/00

    CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/3202 ,  H01S5/32341

    摘要： Group III-V nitride films are fabricated on mesas patterned either on substrates such as sapphire substrates, or on mesas patterned on group III-V nitride layers grown on substrates. The mesas provide reduced area surfaces for epitaxially growing group III-V nitride films, to reduce thermal film stresses in the films to reduce cracking. The surfaces of the mesas on which the films are grown are dimensioned and oriented to reduce the number of thin film crack planes that can grow on the mesas. Further cracking reduction in the films can be achieved by thinning the substrate to form membranes. The reduced substrate thickness at the membranes reduces the thermal expansion mismatch tensile stress in the films. The mesas can reduce or eliminate the occurrence of cracks in GaN or AlGaN epitaxial films grown on the mesas, for percentages of aluminum in the AlGaN films of up to about 18%. The improved group III-V nitride films can be used in optoelectronic devices including LEDs and edge and surface emitting laser diodes.

    摘要翻译： III-V族氮化物薄膜制造在图案化的基板上，例如蓝宝石衬底上，或者在生长在衬底上的III-V族氮化物层上图案化的台面上。 台面为外延生长的III-V族氮化物薄膜提供减少的面积表面，以减少薄膜中的热薄膜应力以减少开裂。 其上生长膜的台面的表面的尺寸和尺寸被定向以减少可以在台面上生长的薄膜裂纹平面的数量。 膜的进一步裂解减少可以通过使基材变薄以形成膜来实现。 在薄膜处降低的基底厚度降低了薄膜中的热膨胀失配拉伸应力。 台面可以减少或消除在台面上生长的GaN或AlGaN外延膜中的裂纹的发生，AlGaN膜中铝的百分比高达约18％。 改进的III-V族III族氮化物薄膜可用于包括LED和边缘和表面发射激光二极管在内的光电器件。