公开(公告)号：US08501597B2

公开(公告)日：2013-08-06

申请号：US13191798

申请日：2011-07-27

申请人： Yuh-Jen Cheng ,  Ming-Hua Lo ,  Hao-Chung Kuo

发明人： Yuh-Jen Cheng ,  Ming-Hua Lo ,  Hao-Chung Kuo

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20

摘要： A method of fabricating a group III-nitride semiconductor includes the following steps of: forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned mask layer; etching the group III-nitride semiconductor layer to form a plurality of second openings, which are substantially at least partially aligned with the first openings; and epitaxially growing the group III-nitride semiconductor layer again.

摘要翻译： 制造III族氮化物半导体的方法包括以下步骤：形成具有沉积在外延衬底上的多个第一开口的第一图案化掩模层; 在所述外延衬底上外延生长III族氮化物半导体层并且覆盖所述第一图案化掩模层的至少一部分; 蚀刻III族氮化物半导体层以形成多个第二开口，其基本上至少部分地与第一开口对准; 并再次外延生长III族氮化物半导体层。

公开(公告)号：US08133803B2

公开(公告)日：2012-03-13

申请号：US12489688

申请日：2009-06-23

申请人： Yuh-Jen Cheng ,  Ming-Hua Lo ,  Hao-Chung Kuo

发明人： Yuh-Jen Cheng ,  Ming-Hua Lo ,  Hao-Chung Kuo

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02551 ,  H01L21/02658 ,  H01L33/007

摘要： A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign substrate; and c) removing at least part of the semiconductor solid state material along the interface between the semiconductor layer and the foreign substrate. The removing step c) is preferably achieved by selective interfacial chemical etching. The semiconductor layer may be utilized as a substrate for fabrication of a wide variety of electronic and opto-electronic devices and integrated circuitry products.

摘要翻译： 一种制造半导体层的方法，包括：a）在异质衬底上生长半导体层; b）在所述半导体层上形成至少一个开口，其中所述开口暴露所述半导体层和所述异质衬底之间的界面; 以及c）沿着所述半导体层和所述异质衬底之间的界面去除所述半导体固态材料的至少一部分。 去除步骤c）优选通过选择性界面化学蚀刻来实现。 半导体层可以用作用于制造各种电子和光电子器件和集成电路产品的衬底。

公开(公告)号：US20120028446A1

公开(公告)日：2012-02-02

申请号：US13191798

申请日：2011-07-27

申请人： Yuh-Jen CHENG ,  Ming-Hua Lo ,  Hao-Chung Kuo

发明人： Yuh-Jen CHENG ,  Ming-Hua Lo ,  Hao-Chung Kuo

IPC分类号： H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20

摘要： A method of fabricating a group III-nitride semiconductor includes the following steps of forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned mask layer; etching the group III-nitride semiconductor layer to form a plurality of second openings, which are substantially at least partially aligned with the first openings; and epitaxially growing the group III-nitride semiconductor layer again.

摘要翻译： 制造III族氮化物半导体的方法包括以下步骤：形成具有沉积在外延衬底上的多个第一开口的第一图案化掩模层; 在所述外延衬底上外延生长III族氮化物半导体层并覆盖所述第一图案化掩模层的至少一部分; 蚀刻III族氮化物半导体层以形成多个第二开口，其基本上至少部分地与第一开口对准; 并再次外延生长III族氮化物半导体层。

公开(公告)号：US08563964B2

公开(公告)日：2013-10-22

申请号：US13067822

申请日：2011-06-29

申请人： Chao-Hsun Wang ,  Zhen-Yu Li ,  Hao-Chung Kuo

发明人： Chao-Hsun Wang ,  Zhen-Yu Li ,  Hao-Chung Kuo

IPC分类号： H01L29/06

CPC分类号： H01L33/42 ,  H01L33/04 ,  H01L33/32

摘要： A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.

摘要翻译： 公开了一种半导体发光器件，其包括：具有第一表面和第二表面的衬底; 第一半导体导电层设置在基板的第一表面上; 插入层设置在第一半导体导电层上; 活性层设置在插入层上; 第二半导体导电层设置在有源层上; 第一电极设置在第二半导体导电层上; 并且第二电极设置在基板的第二表面上，其中第二电极的电极与第一电极的电极相反。

公开(公告)号：US20140077153A1

公开(公告)日：2014-03-20

申请号：US13616345

申请日：2012-09-14

申请人： Zhen-Yu Li ,  Tzu-Te Yang ,  Hon-Way Lin ,  Chung-Pao Lin ,  Kuan-Chun Chen ,  Ching-Yu Chen ,  You-Da Lin ,  Hao-Chung Kuo

发明人： Zhen-Yu Li ,  Tzu-Te Yang ,  Hon-Way Lin ,  Chung-Pao Lin ,  Kuan-Chun Chen ,  Ching-Yu Chen ,  You-Da Lin ,  Hao-Chung Kuo

IPC分类号： H01L33/32

CPC分类号： H01S5/2013 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/145 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34333

摘要： The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.

摘要翻译： 本发明涉及一种发光装置。 发光器件包括位于衬底上方的n掺杂氮化镓（n-GaN）层。 多量子阱（MQW）层位于n-GaN层上。 电子阻挡层位于MQW层上。 p型掺杂氮化镓（p-GaN）层位于电子阻挡层上方。 发光装置包括空穴注入层。 在一些实施例中，空穴注入层包括位于以下三个位置之一的p掺杂的氮化铟镓（p-InGaN）层：在MQW层和电子阻挡层之间; 在电子阻挡层和p-GaN层之间; 并在p-GaN层内部。

公开(公告)号：US20110024880A1

公开(公告)日：2011-02-03

申请号：US12846364

申请日：2010-07-29

申请人： Zhen-Yu Li ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Tien-Chang Lu

发明人： Zhen-Yu Li ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Tien-Chang Lu

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L33/24 ,  H01L21/02439 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/22

摘要： A nano-patterned substrate includes a plurality of nano-particles or nanopillars on an upper surface thereof. A ratio of height to diameter of each of the nano-particles or each of the nanopillars is either greater than or equal to 1. Particularly, a ratio of height to diameter of the nanopillars is greater than or equal to 5. Each of the nano-particles or each of the nanopillars has an arc-shaped top surface. When an epitaxial growth process is applied onto the nano-patterned substrate to form an epitaxial layer, the epitaxial layer has very low defect density. Thus, a production yield of fabricating the subsequent device can be improved.

摘要翻译： 纳米图案基板在其上表面上包括多个纳米颗粒或纳米柱。 每个纳米颗粒或每个纳米颗粒的高度与直径的比率大于或等于1.特别地，纳米柱的高度与直径之比大于或等于5.每个纳米颗粒 颗粒或每个纳米柱具有弧形顶表面。 当将外延生长工艺施加到纳米图案化衬底上以形成外延层时，外延层具有非常低的缺陷密度。 因此，可以提高制造后续装置的产量。

公开(公告)号：US08216872B1

公开(公告)日：2012-07-10

申请号：US13031363

申请日：2011-02-21

申请人： Jia-Min Shieh ,  Chang-Hong Shen ,  Wen-Hsien Huang ,  Shih-Chuan Wu ,  Bau-Tong Dai ,  Jung Y. Huang ,  Hao-Chung Kuo

发明人： Jia-Min Shieh ,  Chang-Hong Shen ,  Wen-Hsien Huang ,  Shih-Chuan Wu ,  Bau-Tong Dai ,  Jung Y. Huang ,  Hao-Chung Kuo

IPC分类号： H01L21/00

CPC分类号： G02B5/008 ,  G02B5/0242 ,  H01L31/02168 ,  H01L31/056 ,  Y02E10/52

摘要： A light-trapping layer is integrated into a thin-film solar cell. It is integrated as a light-inlet layer, an intermediate layer or a shaded layer with nano-particles embedded in a transparent or non-transparent conductive film. Thus, light stays longer in an absorption layer with photocurrent increased; defects of interface between the absorption layer and the nano-material are decreased; anti-reflective effect to inlet light is enhanced; and a good integrity and a good reliability for long-time light-shining are obtained.

摘要翻译： 光俘获层被集成到薄膜太阳能电池中。 它被集成为光入口层，中间层或具有嵌入在透明或非透明导电膜中的纳米颗粒的阴影层。 因此，在光电流增加的情况下，光在吸收层中保持较长时间; 吸收层与纳米材料之间的界面缺陷减小; 对入口灯的防反射效果得到提高; 并且获得了长时间发光的良好的完整性和良好的可靠性。

公开(公告)号：US07998539B2

公开(公告)日：2011-08-16

申请号：US12289816

申请日：2008-11-05

申请人： Chia-Hua Chang ,  Chin-Sheng Yang ,  Ching-Hua Chiu ,  Pei-Chen Yu ,  Hao-Chung Kuo

发明人： Chia-Hua Chang ,  Chin-Sheng Yang ,  Ching-Hua Chiu ,  Pei-Chen Yu ,  Hao-Chung Kuo

IPC分类号： C23C14/30

CPC分类号： C23C14/226 ,  C23C14/086 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/249953 ,  Y10T428/249978

摘要： A method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.

摘要翻译： 提供了通过斜角沉积形成薄膜结构的方法。 该方法包括以下步骤：通过电子束蒸发系统蒸发室中的目标源，并且将工艺气体引入室中并调节蒸发衬底的倾斜角度并且在蒸发期间控制室中的温度以在蒸发器中形成薄膜 通过斜角沉积蒸发衬底，然后对蒸发衬底进行退火以形成具有多孔纳米棒微结构的薄膜。

公开(公告)号：US06553053B2

公开(公告)日：2003-04-22

申请号：US09912611

申请日：2001-07-25

申请人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

发明人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

IPC分类号： H01S308

CPC分类号： H01S5/18333 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/2063 ,  H01S2301/166

摘要： A laser diode that includes a light guiding structure that improves the light-output-versus-current curve by altering the multiple spatial modes of the laser diode. A laser diode according to the present invention includes a bottom mirror constructed on an electrically conducting material, an active region constructed from a first conductive spacer situated above the bottom mirror, a light emitting layer, and a second conductive spacer situated above the light emitting layer. The laser diode also includes a top mirror constructed from a plurality of mirror layers of a semiconducting material of a first conductivity type that are located above the second conductive spacer. The adjacent mirror layers have different indexes of refraction. One or more of the top mirror layers is altered to provide an aperture defining layer that includes an aperture region that alters the spatial modes of the device.

摘要翻译： 一种激光二极管，其包括通过改变激光二极管的多个空间模式来改善光输出 - 电流曲线的导光结构。 根据本发明的激光二极管包括构造在导电材料上的底部反射镜，由位于底部反射镜上方的第一导电间隔件，发光层和位于发光层上方的第二导电间隔件构成的有源区域 。 激光二极管还包括由位于第二导电间隔物上方的由第一导电类型的半导体材料的多个镜层构成的顶镜。 相邻的镜层具有不同的折射率。 改变顶镜面层中的一个或多个以提供孔限定层，其包括改变装置的空间模式的孔径区域。

公开(公告)号：US08742442B2

公开(公告)日：2014-06-03

申请号：US13450424

申请日：2012-04-18

申请人： Cheng-Hung Wei ,  Bo-Wen Lin ,  Ching-Yen Peng ,  Hao-Chung Kuo ,  Wen-Ching Hsu

发明人： Cheng-Hung Wei ,  Bo-Wen Lin ,  Ching-Yen Peng ,  Hao-Chung Kuo ,  Wen-Ching Hsu

IPC分类号： H01L33/20

CPC分类号： H01L33/22 ,  H01L33/007

摘要： A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.

摘要翻译： 用于图案化外延衬底的方法包括：（a）在外延衬底上形成蚀刻掩模层，并且使用图案化的掩模掩模层图案化蚀刻掩模层，以将蚀刻掩模层形成为多个间隔开的掩模图案; 和（b）蚀刻从掩模图案曝光的外延基板，以及去除掩模图案，使得外延基板形成有多个间隔开的基板图案。