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公开(公告)号：US07923357B2
公开(公告)日：2011-04-12
申请号：US12285574
申请日：2008-10-08
CPC分类号： H01L21/28035 , C23C16/24 , C23C16/56 , H01L21/0257 , H01L21/02573 , H01L21/0262 , H01L21/02667
摘要： A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.
摘要翻译： 用于形成掺杂有磷或硼的多晶硅膜的多晶硅膜形成方法包括加热放置在反应容器内部的真空气氛中的目标衬底，并将反应容器中的硅膜形成气体，用于 用磷或硼掺杂膜，以及含有成分以阻止多晶硅晶体形成柱状晶体的颗粒尺寸调节气体，并促进多晶硅晶体的小型化，从而将掺杂有磷或硼的硅膜沉积在 目标基板。
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公开(公告)号：US4774547A
公开(公告)日：1988-09-27
申请号：US140912
申请日：1987-12-29
CPC分类号： G03B27/32
摘要： An image forming apparatus is disclosed, in which silver halide color photographic light-sensitive materials are used. The apparatus has a scanning exposure system and a processing system for the photographic materials. Two types of photographic materials, reflective type and transparent type, can be used interchangeably. Conditions of the exposure and the processing are automatically changed according to the types of the photographic materials.
摘要翻译： 公开了一种图像形成装置，其中使用卤化银彩色照相感光材料。 该装置具有用于照相材料的扫描曝光系统和处理系统。 两种类型的照相材料，反射型和透明型，可以互换使用。 曝光和处理的条件根据照相材料的类型自动改变。
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13.发明授权Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus 失效热处理设备中反应管和排气管道系统的清洗方法
公开(公告)号：US5637153A
公开(公告)日：1997-06-10
申请号：US429159
申请日：1995-04-26
申请人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura , Hitoshi Kato
发明人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura , Hitoshi Kato
CPC分类号： C23C16/24 , C23C16/405 , C23C16/4405 , C23C16/4412
摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.
摘要翻译： 在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅 通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。 在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于 作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。
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公开(公告)号：US08183158B2
公开(公告)日：2012-05-22
申请号：US11907820
申请日：2007-10-17
申请人： Masahiko Tomita , Kota Umezawa , Ryou Son , Toshiharu Nishimura
发明人： Masahiko Tomita , Kota Umezawa , Ryou Son , Toshiharu Nishimura
IPC分类号： H01L21/311
CPC分类号： C23C16/4405 , H01L21/67109
摘要： A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.
摘要翻译： 使用半导体处理装置的方法包括将氧化气体和还原气体供给到不在其中容纳产品目标基板的处理装置的处理容器中; 使得氧化气体和还原气体在激活处理容器内的氧化气体和还原气体的第一气氛中相互反应，从而产生自由基; 以及通过使用自由基从处理容器的内表面除去污染物。
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公开(公告)号：US20080093023A1
公开(公告)日：2008-04-24
申请号：US11907820
申请日：2007-10-17
申请人： Masahiko Tomita , Kota Umezawa , Ryou Son , Toshiharu Nishimura
发明人： Masahiko Tomita , Kota Umezawa , Ryou Son , Toshiharu Nishimura
CPC分类号： C23C16/4405 , H01L21/67109
摘要： A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.
摘要翻译： 使用半导体处理装置的方法包括将氧化气体和还原气体供给到不在其中容纳产品目标基板的处理装置的处理容器中; 使得氧化气体和还原气体在激活处理容器内的氧化气体和还原气体的第一气氛中相互反应，从而产生自由基; 以及通过使用自由基从处理容器的内表面除去污染物。
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公开(公告)号：US5065441A
公开(公告)日：1991-11-12
申请号：US544663
申请日：1990-06-27
CPC分类号： H04N1/4056
摘要： An image processing apparatus for processing an image signal, comprising a clock for generating a periodical clock signal, a pattern signal generator for generating 2N (where N is a positive integer) pattern signals, each of the pattern signals having a constant wave-form, a wave length of 2N times longer than that of the periodical clock signal and a phase difference 360/2N relative to another one of the pattern signals, a comparator for comparing the pattern signals with the image signal and for generating 2N of comparison signals, and a composition generator for combining said 2N comparison signals and for generating a pulse-duration modulated signal from the combined 2N comparison signals.
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17.发明授权
公开(公告)号：US4872033A
公开(公告)日：1989-10-03
申请号：US317078
申请日：1989-02-28
CPC分类号： G03B27/32 , G03B27/588 , G03D3/132
摘要： Present invention provides an image forming apparatus capable of forming an image on various kinds of photosensitive material by subjecting the photosensitive material to an image forming process having at least imagewise exposing, developing, and fixing process on a process condition determined in accordance with a kind of the photosensitive material. While processing certain kind of photosensitive material, a kind discriminator detects a new kind of photosensitive material being subjected a current image forming process, CPU inhibits a new image forming process until judging a predetermined process of the current image forming process as being completed from a signal of a process monitor.
摘要翻译： 本发明提供了一种图像形成装置，其能够通过对感光材料进行至少成像曝光，显影和定影处理的图像形成处理，在根据一种 感光材料。 在处理某种感光材料的同时，种类识别器检测正在进行当前图像形成处理的新型感光材料，CPU禁止新的图像形成处理，直到从信号完成当前图像形成处理的预定处理 的过程监视器。
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公开(公告)号：US5622566A
公开(公告)日：1997-04-22
申请号：US424473
申请日：1995-05-10
IPC分类号： C23C16/455 , H01L21/205 , H01L21/00
CPC分类号： C23C16/45561 , C23C16/455 , H01L21/02422 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A film-forming apparatus for forming an impurity-doped film on an object such as a semiconductor wafer has an elongated reaction tube located such that its longitudinal direction is identical to the vertical direction, and having an object arrangement region in which a plurality of objects or semiconductor wafers to be processed can be arranged at intervals in the vertical direction. A film-forming gas is introduced into the reaction tube through a film-forming gas introduction pipe. This apparatus also has a main dopant gas introduction pipe, having a gas outlet located below the object arrangement region in the reaction tube, for introducing a dopant gas into the reaction tube and guiding the same upward, at least one sub dopant gas introduction pipe, having a gas outlet located above the object arrangement region in the reaction tube, for introducing the same dopant gas as the first-mentioned one into the reaction tube so as to compensate for insufficient supply of the dopant gas through the main dopant gas introduction pipe, an exhaustion system for exhausting the gases in the reaction tube, and a heating unit for heating the interior of the reaction tube.
摘要翻译： PCT No.PCT / JP94 / 01526 Sec。 371日期：1995年5月10日 102（e）日期1995年5月10日PCT 1994年9月16日PCT PCT。 出版物WO95 / 08185 日期1995年3月23日在半导体晶片等物体上形成杂质掺杂膜的成膜装置具有伸长的反应管，其长度方向与上下方向一致， 可以在垂直方向上间隔布置要处理的多个物体或半导体晶片。 成膜气体通过成膜气体引入管被引入到反应管中。 该装置还具有主要的掺杂剂气体引入管，其具有位于反应管中的物体排列区域下方的气体出口，用于将掺杂剂气体引入反应管并引导相同的向上的至少一个子掺杂剂气体导入管， 具有位于反应管中的物体排列区域上方的气体出口，用于将与前述相同的掺杂气体引入反应管中，以补偿通过主要掺杂剂气体导入管的掺杂剂气体供应不足， 用于排出反应管中的气体的耗尽系统和用于加热反应管内部的加热单元。
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19.发明授权Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily 失效一种其中处理容器中的反应副产物的分压暂时降低的成膜方法
公开(公告)号：US5503875A
公开(公告)日：1996-04-02
申请号：US214109
申请日：1994-03-17
申请人： Masayuki Imai , Toshiharu Nishimura
发明人： Masayuki Imai , Toshiharu Nishimura
IPC分类号： H01L21/31 , C23C16/44 , C23C16/458 , H01L21/316 , H01L21/318 , C23C16/52
CPC分类号： C23C16/4412 , C23C16/4584
摘要： A film is formed on a substrate by supplying a plurality of processing gases into a processing container and forming the film on the substrate from the processing gases while exhausting a portion of the gases out of the processing container. Before a partial pressure of a byproduct in the processing container produced through chemical reaction of the processing gases reaches an equilibrium state, the partial pressure of the byproduct in the processing container is temporarily reduced by temporarily suppressing or stopping the supply of at least one of the processing gases into the processing container and exhausting gas from the processing container.
摘要翻译： 通过将多种处理气体供给到处理容器中，并且在将一部分气体排出处理容器的同时从处理气体在基板上形成膜而在基板上形成膜。 在通过处理气体的化学反应产生的处理容器中的副产物的分压达到平衡状态之前，暂时抑制或停止供给至少一个的处理容器中副产物的分压 将处理气体加工到处理容器中并从处理容器排出气体。
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公开(公告)号：US6110286A
公开(公告)日：2000-08-29
申请号：US175433
申请日：1998-10-20
IPC分类号： H01L21/22 , C23C16/44 , C23C16/455 , C23C16/54 , C30B25/14 , H01L21/00 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/54 , C30B25/14 , H01L21/67017
摘要： A vertical processing unit 10 for semiconductor wafers has; a cylindrical processing chamber 2 having an opening 18 in an inside of an annular bottom surface, and a disk-shaped cap 6 having an annular abutting-surface 32 abutting on the annular bottom surface of the chamber. A mounting-surface 6p formed on the inside of the annular abutting-surface 32. A wafer-boat 8 for holding a wafer W to be processed is mounted on the mounting-surface 6p of the cap 6. The abutting-surface 32 has an annular groove 34A formed therein. An inert gas supply passgeway 38 is provided in communication with the annular groove 34A for supplying an inert gas into the annular groove 34A through a header 16. An ejection opening 36 for ejecting an inert gas is provided on the inner side of the annular groove 34A for communicating the annular groove 34A and the interior of the processing chamber 2. Owing to the active leaking of the nitrogen (N.sub.2) gas into the interior of the processing chamber 2 through the ejection opening 36, the corrosive gas as a processing gas in the processing chamber 2 does not leak out, so that corrosion or rusting of the equipment around the processing chamber 2 is prevented.
摘要翻译： 用于半导体晶片的垂直处理单元10具有： 在环形底面的内侧具有开口18的圆筒状的处理室2和与该室的环状底面邻接的环状的抵接面32的圆盘状的盖6。 安装表面6p，形成在环形邻接表面32的内侧。用于保持待处理晶片W的晶片舟8安装在盖6的安装表面6p上。邻接表面32具有 形成在其中的环形槽34A。 惰性气体供给接头38与环形槽34A连通，用于通过集管16将惰性气体供给到环形槽34A中。用于喷射惰性气体的喷射口36设置在环形槽34A的内侧 用于使环形槽34A和处理室2的内部连通。由于氮气（N 2）气体通过喷射开口36有效地泄漏到处理室2的内部，腐蚀性气体作为处理气体 处理室2不会泄漏，从而防止了处理室2周围的设备的腐蚀或生锈。
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