公开(公告)号：US09660138B2

公开(公告)日：2017-05-23

申请号：US15391160

申请日：2016-12-27

Applicant: NGK INSULATORS, LTD.

Inventor： Yoshitaka Kuraoka ,  Shohei Oue ,  Masahiko Namerikawa ,  Morimichi Watanabe

IPC: H01L21/00 ,  H01L33/00 ,  H01L27/15 ,  H01L33/32 ,  H01L33/06 ,  H01L33/58 ,  H01L33/02 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A method for manufacturing a light emitting device includes a) forming a first light confinement layer having a plurality of openings on or above one main surface of an oriented polycrystalline substrate, said oriented polycrystalline substrate including a plurality of oriented crystal grains; b) stacking an n-type layer, an active layer, and a p-type layer; c) forming a second light confinement layer on said first light confinement layer so that said second light confinement layer covers said plurality of first columnar structures and said second columnar structure; d) forming a transparent conductive film on said second light confinement layer; e) forming a pad electrode on said transparent conductive film; and f) forming a cathode electrode electrically connected to ends of said plurality of first columnar structures closer to said oriented polycrystalline substrate.

公开(公告)号：US09437463B2

公开(公告)日：2016-09-06

申请号：US13863729

申请日：2013-04-16

Applicant: NGK INSULATORS, LTD.

Inventor： Nobuyuki Kondo ,  Morimichi Watanabe ,  Asumi Jindo ,  Yuji Katsuda ,  Yosuke Sato ,  Yoshinori Isoda

IPC: H05B3/68 ,  H01L21/67 ,  C04B35/581 ,  H05B1/00 ,  B32B18/00 ,  H05B3/28 ,  H01L21/683 ,  C04B35/58 ,  C04B35/626 ,  C04B35/645 ,  C04B37/00 ,  C23C14/34

CPC classification number: H01L21/67 ,  B32B18/00 ,  C04B35/58 ,  C04B35/581 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/645 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/5445 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C23C14/3414 ,  H01L21/6831 ,  H05B1/00 ,  H05B3/283 ,  Y10T428/24942

Abstract: A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.

Abstract translation: 加热装置包括具有加热半导体的加热面的基座和与基座的背面接合的支撑部。 感受体包括以镁，铝，氧和氮为主要成分的陶瓷材料。 该材料包括主相，其包含通过CuKαX射线表现出至少2θ= 47至50°的XRD峰的镁 - 铝氧氮化物相。

公开(公告)号：US12183792B2

公开(公告)日：2024-12-31

申请号：US17445617

申请日：2021-08-23

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi Matsushima ,  Jun Yoshikawa ,  Morimichi Watanabe ,  Risa Miyakaze

IPC: H01L29/16 ,  C30B29/36 ,  H01L21/02

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.

公开(公告)号：US10156024B2

公开(公告)日：2018-12-18

申请号：US14951548

申请日：2015-11-25

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi Watanabe ,  Jun Yoshikawa ,  Hirofumi Yamaguchi ,  Tsutomu Nanataki

IPC: C30B29/16 ,  C30B19/12 ,  C01G9/02 ,  C30B7/00 ,  C30B28/04 ,  C30B29/60 ,  C30B1/10 ,  H01B1/02 ,  C30B7/10 ,  C30B7/14 ,  C30B1/02

Abstract: Disclosed is a self-supporting zinc oxide substrate composed of a plate composed of a plurality of zinc-oxide-based single crystal grains, wherein the plate has a single crystal structure in an approximately normal direction, and the zinc-oxide-based single crystal grains have a cross-sectional average diameter of greater than 1 μm. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a layer with a thickness of 20 μm or greater composed of zinc-oxide-based crystals on the oriented polycrystalline sintered body so that the layer has crystal orientation mostly in conformity with crystal orientation of the oriented polycrystalline sintered body; and removing the oriented polycrystalline sintered body to obtain the self-supporting zinc oxide substrate. The present invention can provide a self-supporting zinc oxide substrate being inexpensive and also suitable for having a large area as a preferable alternative material for a zinc oxide single crystal substrate.

公开(公告)号：US20180230020A1

公开(公告)日：2018-08-16

申请号：US15909002

申请日：2018-03-01

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi MATSUSHIMA ,  Morimichi Watanabe ,  Kei Sato ,  Tsutomu Nanataki

IPC: C01F7/02

CPC classification number: C01F7/02 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/02 ,  C01P2006/16 ,  C04B35/115 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/724 ,  C04B2235/786 ,  C04B2235/787 ,  G02B1/02 ,  H01L33/007 ,  H01L33/0087

Abstract: An alumina sintered body of the present invention has a degree of c-plane orientation of 5% or more, which is determined by a Lotgering method using an X-ray diffraction profile in a range of 2θ=20° to 70° obtained under X-ray irradiation, and an XRC half width of 15.0° or less in rocking curve measurement, an F content of less than 0.99 mass ppm when measured by D-SIMS, a crystal grain diameter of 15 to 200 μm, and 25 or less pores having a diameter of 0.2 μm to 1.0 μm when a photograph of a viewing area 370.0 μm in a vertical direction and 372.0 μm in a horizontal direction taken at a magnification factor of 1000 is visually observed.

公开(公告)号：US09640720B2

公开(公告)日：2017-05-02

申请号：US14737627

申请日：2015-06-12

Applicant: NGK Insulators, Ltd.

Inventor： Morimichi Watanabe ,  Katsuhiro Imai ,  Jun Yoshikawa ,  Tsutomu Nanataki ,  Takashi Yoshino ,  Yukihisa Takeuchi

IPC: H01L33/16 ,  H01L33/28 ,  H01L33/32 ,  H01L33/26 ,  H01L33/00

CPC classification number: H01L33/16 ,  H01L33/0008 ,  H01L33/0083 ,  H01L33/0095 ,  H01L33/26 ,  H01L33/28 ,  H01L33/285 ,  H01L33/325

Abstract: Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.

公开(公告)号：US09287144B2

公开(公告)日：2016-03-15

申请号：US13863803

申请日：2013-04-16

Applicant: NGK INSULATORS, LTD.

Inventor： Nobuyuki Kondo ,  Morimichi Watanabe ,  Asumi Jindo ,  Yuji Katsuda ,  Yosuke Sato ,  Yoshinori Isoda

IPC: H05B3/02 ,  H01L21/67 ,  C04B35/581 ,  H05B1/00 ,  B32B18/00 ,  H05B3/28 ,  H01L21/683 ,  C04B35/58 ,  C04B35/626 ,  C04B35/645 ,  C04B37/00 ,  C23C14/34

CPC classification number: H01L21/67 ,  B32B18/00 ,  C04B35/58 ,  C04B35/581 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/645 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/5445 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C23C14/3414 ,  H01L21/6831 ,  H05B1/00 ,  H05B3/283 ,  Y10T428/24942

Abstract: A heating apparatus 1A includes a susceptor part 9A having a heating face 9a of heating a semiconductor W, and a ring shaped part 6A provided in the outside of the heating face 9a. The ring shaped part 6A is composed of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° taken by using CuKα ray.

Abstract translation: 加热装置1A包括具有加热半导体W的加热面9a的基座部9A和设置在加热面9a的外侧的环状部6A。 环形部6A由以镁，铝，氧，氮为主要成分的陶瓷材料构成。 陶瓷材料包括主相，其包含镁 - 铝氧氮化物相，其表现出至少2％的XRD峰; =通过使用CuKα射线摄取47至50°。

公开(公告)号：US09202718B2

公开(公告)日：2015-12-01

申请号：US13864467

申请日：2013-04-17

Applicant: NGK INSULATORS, LTD.

Inventor： Kenichiro Aikawa ,  Morimichi Watanabe ,  Asumi Jindo ,  Yuji Katsuda ,  Yosuke Sato ,  Yoshinori Isoda

IPC: H01L21/683 ,  H01L21/67 ,  C04B35/581 ,  H05B1/00 ,  B32B18/00 ,  H05B3/28 ,  C04B35/58 ,  C04B35/626 ,  C04B35/645 ,  C04B37/00 ,  C23C14/34

CPC classification number: H01L21/67 ,  B32B18/00 ,  C04B35/58 ,  C04B35/581 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/645 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/5445 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C23C14/3414 ,  H01L21/6831 ,  H05B1/00 ,  H05B3/283 ,  Y10T428/24942

Abstract: An electrostatic chuck 1A includes a susceptor 11A having an adsorption face 11a of adsorbing a semiconductor, and an electrostatic chuck electrode 4 embedded in the susceptor. The susceptor 11A includes a plate shaped main body 3 and a surface corrosion resistant layer 2 including the adsorption face 2. The surface corrosion resistant layer 2 is made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.

Abstract translation: 静电吸盘1A包括具有吸附半导体的吸附面11a的基座11A和嵌入基座的静电卡盘电极4。 基座11A包括板状主体3和包括吸附面2的表面耐腐蚀层2.表面耐腐蚀层2由以镁，铝，氧和氮为主要成分的陶瓷材料制成。 陶瓷材料包括主相，其包含镁 - 铝氧氮化物相，其表现出至少2％的XRD峰;通过CuKαX射线显示47至50°。

公开(公告)号：US12159907B2

公开(公告)日：2024-12-03

申请号：US17588708

申请日：2022-01-31

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroshi Fukui ,  Morimichi Watanabe ,  Jun Yoshikawa

IPC: H01L29/24 ,  H01L29/06

Abstract: Provided is a α-Ga2O3 based semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution as a main phase. The maximum value θmax and the minimum value θmin for off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of θmax-θmin≤0.30°. The off-angle is defined as an inclination angle θ of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.

公开(公告)号：US12125883B2

公开(公告)日：2024-10-22

申请号：US17663229

申请日：2022-05-13

Applicant: NGK Insulators, Ltd.

Inventor： Morimichi Watanabe ,  Kiyoshi Matsushima ,  Jun Yoshikawa

IPC: H01L29/00 ,  H01L21/02 ,  H01L29/04 ,  H01L29/16

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02581 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/04 ,  H01L21/02667

Abstract: A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×1016 atoms/cm3 or more and 1×1019 atoms/cm3 or less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.