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    OPTOELECTRONIC SEMICONDUCTOR CHIP
    13.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
    光电子半导体芯片

    公开(公告)号：US20160225952A1

    公开(公告)日：2016-08-04

    申请号：US15098779

    申请日：2016-04-14

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Joachim Hertkorn ,  Karl Engl ,  Berthold Hahn ,  Andreas Weimar

    IPC: H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/145 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02664 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 μm is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.

    Abstract translation: 光电子半导体芯片包括具有生成辐射的有源层和邻近有源层的至少一个n掺杂层的半导体层序列，半导体层序列基于AlInGaN或InGaN，一个或多个中心层由 在n型掺杂层背离载体衬底的一侧生长厚度为25nm至200nm的AlGaN，在侧面形成厚度为300nm至1.2μm的掺杂或未掺杂GaN的聚结层 的中心层或中心层中的一个背离载体衬底，粗糙化从聚结层延伸到n掺杂层的深度或深度，半导体层堆叠的辐射出射区域部分地通过聚结形成 层，中央层暴露在地方。

    Optoelectronic Semiconductor Body and Method for Producing the Same
    14.
    发明申请
    Optoelectronic Semiconductor Body and Method for Producing the Same 有权
    光电半导体及其制造方法

    公开(公告)号：US20130221392A1

    公开(公告)日：2013-08-29

    申请号：US13862096

    申请日：2013-04-12

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Matthias Sabathil

    IPC: H01L33/58

    CPC classification number: H01L33/58 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.

    Abstract translation: 光电半导体本体包括具有适于产生电磁辐射的有源层的半导体层序列和第一和第二电连接层。 半导体本体被设置用于从前侧发射电磁辐射。 第一和第二电连接层布置在与前侧相对的后侧，并且通过分离层彼此电绝缘。 第一电连接层，第二电连接层和分离层横向重叠，并且第二电连接层的部分区域从后侧沿着正面的方向通过有源层中的穿透而延伸。 此外，规定了这种光电子半导体体的制造方法。

    Module for a video wall, and method of producing same
    15.
    发明授权
    Module for a video wall, and method of producing same 有权

    公开(公告)号：US11024610B2

    公开(公告)日：2021-06-01

    申请号：US16318279

    申请日：2017-07-13

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Thomas Schwarz ,  Alexander Martin ,  Jürgen Moosburger ,  Karl Engl

    IPC: H01L25/075 ,  G09F9/00 ,  H01L33/62

    Abstract: A module for a video wall includes a plurality of light-emitting components; and a carrier including conduction regions, wherein the light-emitting components each include a top side including a top-side contact and an underside including an underside contact, the light-emitting components are configured to emit electromagnetic radiation via the top side, the underside contacts of the light-emitting components electrically conductively connect to the conduction regions, the top-side contacts electrically contact a conductive layer, the light-emitting components each include at least four light-emitting semiconductor chips, the light-emitting semiconductor chips within a light-emitting component interconnect in parallel with one another, the light-emitting semiconductor chips within a light-emitting component each electrically conductively connect to the top-side contacts and the underside contacts of the light-emitting component, a plurality of adjacent light-emitting components constitute a cluster, and the light-emitting semiconductor chips of the light-emitting components of a cluster includes an identical nominal wavelength.

    Modular module
    16.
    发明授权
    Modular module 有权

    公开(公告)号：US11023194B2

    公开(公告)日：2021-06-01

    申请号：US16314467

    申请日：2017-06-30

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Thomas Schwarz ,  Frank Singer ,  Jürgen Moosburger ,  Karl Engl ,  Alexander Martin

    IPC: G09G1/00 ,  G06F3/14 ,  G09G3/32

    Abstract: An arrangement includes at least two modules for a video wall including light-emitting components arranged on a carrier, wherein a drive circuit that selectively drives the component at the carrier is provided for each component, row lines and column lines are provided, each drive circuit connects to a row line and a column line, each drive circuit connects to power supply lines, the carrier includes plated-through holes that guide the row lines and the column lines onto an underside of the carrier, the two modules are arranged on a further carrier, the further carrier includes at least one recess, an electrical connector is arranged in the recess, and the electrical connector connects column lines and/or row lines of the two modules to one another.

    Light emitting diode chip
    18.
    发明授权
    Light emitting diode chip 有权

    公开(公告)号：US10008649B2

    公开(公告)日：2018-06-26

    申请号：US15402689

    申请日：2017-01-10

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Korbinian Perzlmaier ,  Kai Gehrke ,  Robert Walter ,  Karl Engl ,  Guido Weiss ,  Markus Maute ,  Stefanie Rammelsberger

    IPC: H01L33/62 ,  H01L33/60 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/56

    Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

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