公开(公告)号：US20170073840A1

公开(公告)日：2017-03-16

申请号：US15123565

申请日：2015-03-03

Applicant: OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC. ,  PANASONIC CORPORATION

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masashi ISEMURA ,  Yoshio OKAYAMA

IPC: C30B29/40 ,  C30B19/12 ,  C30B25/20 ,  C30B25/18 ,  C30B29/20 ,  B28D5/00 ,  H01L21/02 ,  H01L21/78 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L29/20 ,  C30B19/02 ,  C30B33/00

CPC classification number: C30B29/406 ,  B28D5/00 ,  C30B19/02 ,  C30B19/12 ,  C30B25/186 ,  C30B25/20 ,  C30B29/20 ,  C30B29/38 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/7813 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3013 ,  H01S2304/06

Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

Abstract translation: 通过气相外延生产出具有很少缺陷（例如变形，位错和翘曲）的高质量的大的III族氮化物晶体。 制造III族氮化物晶体的方法包括：通过液相外延生产第一III族氮化物晶体1003的第一III族氮化物晶体制造工艺; 以及通过使III族元素金属与氧化剂和含氮气体反应，通过气相外延在第一晶体1003上制造第二III族氮化物晶体1004的第二III族氮化物晶体制造方法。 在第一III族氮化物晶体制造方法中，使晶种1003a（预先设置的III族氮化物）的表面与碱金属熔体，III族元素和氮相互接触， 在碱金属熔体中含有气氛，并且通过从种子晶体1003a生长的III族氮化物晶体的生长将III族氮化物晶体结合在一起，以产生第一晶体1003。

公开(公告)号：US20200263320A1

公开(公告)日：2020-08-20

申请号：US16792386

申请日：2020-02-17

Applicant: PANASONIC CORPORATION ,  OSAKA UNIVERSITY

Inventor： Yoshio OKAYAMA ,  Shinsuke KOMATSU ,  Masahiro TADA ,  Yusuke MORI ,  Masayuki IMANISHI ,  Masashi YOSHIMURA

IPC: C30B29/40 ,  C30B15/00 ,  C30B15/36

Abstract: An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

公开(公告)号：US20170191186A1

公开(公告)日：2017-07-06

申请号：US15398319

申请日：2017-01-04

Applicant: OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masayuki IMANISHI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC: C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  C30B19/12 ,  C30B19/02

CPC classification number: C30B25/186 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625

Abstract: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.

公开(公告)号：US20170073839A1

公开(公告)日：2017-03-16

申请号：US15123556

申请日：2015-02-26

Applicant: OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masashi ISEMURA ,  Akira USUI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC: C30B29/40 ,  C30B19/06 ,  C30B25/18 ,  C30B25/20 ,  C30B33/00 ,  B28D5/00 ,  H01L21/78 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L29/20 ,  C30B19/02 ,  H01L21/02

CPC classification number: C30B29/406 ,  B28D5/00 ,  C30B19/02 ,  C30B19/061 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/7813 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3013 ,  H01S2304/06

Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

Abstract translation: 通过气相外延生产出具有很少缺陷（例如变形，位错和翘曲）的高质量的大的III族氮化物晶体。 制造III族氮化物晶体的方法包括：通过液相外延生产第一III族氮化物晶体1003的第一III族氮化物晶体制造工艺; 以及通过气相外延在第一晶体1003上制造第二III族氮化物晶体1004的第二III族氮化物晶体制造方法。 在第一III族氮化物晶体制造方法中，使晶种1003a（预先设置的III族氮化物）的表面与碱金属熔体，III族元素和氮相互接触， 在碱金属熔体中含有气氛，并且通过从种子晶体1003a生长的III族氮化物晶体的生长将III族氮化物晶体结合在一起，以产生第一晶体1003。

公开(公告)号：US20240288748A1

公开(公告)日：2024-08-29

申请号：US18585164

申请日：2024-02-23

Applicant: STANLEY ELECTRIC CO., LTD. ,  OSAKA UNIVERSITY

Inventor： Masahiro YOSHIIKE ,  Kazuki SATO ,  Hiroyuki TOGAWA ,  Ryuji KATAYAMA ,  Tomoyuki TANIKAWA ,  Masahiro UEMUKAI ,  Yusuke MORI ,  Masashi YOSHIMURA ,  Tomoaki NAMBU

IPC: G02F1/37 ,  G02F1/35 ,  G02F1/355

CPC classification number: G02F1/37 ,  G02F1/3503 ,  G02F1/3551

Abstract: A second harmonic generation element includes a substrate, a first multilayer film reflecting mirror, a second harmonic generation layer, and a second multilayer film reflecting mirror. The first multilayer film reflecting mirror is formed on the substrate. The second harmonic generation layer is disposed on the first multilayer film reflecting mirror. The second harmonic generation layer is made of a SrB4O7 crystal that receives a fundamental wave with a predetermined wavelength and emits a second harmonic wave with a wavelength in an ultraviolet region. The second multilayer film reflecting mirror is formed on the second harmonic generation layer. The second multilayer film reflecting mirror constitutes a resonator with the first multilayer film reflecting mirror.

公开(公告)号：US20200255975A1

公开(公告)日：2020-08-13

申请号：US16776647

申请日：2020-01-30

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI

IPC: C30B25/16 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US20180094361A1

公开(公告)日：2018-04-05

申请号：US15724909

申请日：2017-10-04

Applicant: OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Masashi ISEMURA

IPC: C30B29/40 ,  C30B25/18 ,  H01L21/02

CPC classification number: C30B29/403 ,  C30B25/165 ,  C30B25/18 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: The present invention provides a method for producing a Group III nitride crystal that can produce a Group III nitride crystal of high quality with few defects such as crack, dislocation, and the like by vapor phase epitaxy. In order to achieve the above object, the method for producing a Group III nitride crystal of the present invention includes a step of: causing Group III element-containing gas 111a to react with nitrogen-containing gas 203a and 203b to generate a Group III nitride crystal 204, wherein in the Group III nitride crystal generation step, the reaction is performed in the presence of a carbon-containing substance.

公开(公告)号：US20220056614A1

公开(公告)日：2022-02-24

申请号：US17479516

申请日：2021-09-20

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI

IPC: C30B25/16 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US20210217618A1

公开(公告)日：2021-07-15

申请号：US17219320

申请日：2021-03-31

Applicant: TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

Inventor： Nobuaki TAKAHASHI ,  Hitoshi MIURA ,  Koji NEISHI ,  Ryuji KATAYAMA ,  Yusuke MORI ,  Masayuki IMANISHI

IPC: H01L21/02 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

Abstract: The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.

公开(公告)号：US20200017993A1

公开(公告)日：2020-01-16

申请号：US16508223

申请日：2019-07-10

Applicant: OSAKA UNIVERSITY ,  PANASONIC CORPORATION

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI ,  Yoshio OKAYAMA

IPC: C30B29/40 ,  C30B25/08 ,  C30B25/10 ,  C30B25/14

Abstract: A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.