公开(公告)号：US20110045349A1

公开(公告)日：2011-02-24

申请号：US12858531

申请日：2010-08-18

Applicant: Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

Inventor： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

IPC: H01M10/058 ,  B05D5/12 ,  C23C16/00 ,  H01G9/07

CPC classification number: H01M4/661 ,  H01G9/0029 ,  H01G9/0032 ,  H01G9/155 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

Abstract: Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.

Abstract translation: 提供了形成储能装置的方法和装置。 在一个实施例中，提供了一种生产能量存储装置的方法。 该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露， 使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物 气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

公开(公告)号：US07775508B2

公开(公告)日：2010-08-17

申请号：US11554954

申请日：2006-10-31

Applicant: Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

Inventor： Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

IPC: B01F3/04

CPC classification number: C23C16/4481

Abstract: A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.

Abstract translation: 描述了一种用于向处理室提供前体的方法和装置。 该装置包括能够接收液体前体源材料或固体前体源材料的安瓿。 安瓿能够将液体前体材料输送到耦合到处理室的蒸发器，或将蒸发的或气态的前体材料输送到处理室。 安瓿还包括连续液位传感器，以准确地监测安瓿内的前体源材料的含量。

公开(公告)号：US06274058B1

公开(公告)日：2001-08-14

申请号：US09347236

申请日：1999-07-02

Applicant: Ravi Rajagopalan ,  Patricia M. Liu ,  Pravin K. Narwankar ,  Huyen Tran ,  Padmanabhan Krishnaraj ,  Alan Ablao ,  Tim Casper

Inventor： Ravi Rajagopalan ,  Patricia M. Liu ,  Pravin K. Narwankar ,  Huyen Tran ,  Padmanabhan Krishnaraj ,  Alan Ablao ,  Tim Casper

IPC: H05H100

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  C23C16/511 ,  C23C16/52 ,  H01J9/38 ,  H01J37/32192 ,  H01J37/32357 ,  Y10S438/905

Abstract: A processing chamber cleaning method is described which utilizes microwave energy to remotely generate a reactive species to be used alone or in combination with an inert gas to remove deposits from a processing chamber. The reactive species can remove deposits from a first processing region at a first pressure and then remove deposits from a second processing region at a second pressure. Also described is a cleaning process utilizing remotely generated reactive species in a single processing region at two different pressures. Additionally, different ratios of reactive gas and inert gas may be utilized to improve the uniformity of the cleaning process, increase the cleaning rate, reduce recombination of reactive species and increase the residence time of reactive species provided to the processing chamber.

Abstract translation: 描述了一种处理室清​​洁方法，其利用微波能量远程产生要单独使用或与惰性气体组合使用的反应物质以从处理室去除沉积物。 反应性物质可以在第一压力下从第一处理区域去除沉积物，然后在第二压力下从第二处理区域去除沉积物。 还描述了在两个不同压力下在单个处理区域中利用远程产生的活性物质的清洁方法。 此外，可以使用不同比例的反应气体和惰性气体来改善清洁过程的均匀性，提高清洗速率，减少活性物质的复合并增加提供给处理室的反应物种的停留时间。

公开(公告)号：US08603195B2

公开(公告)日：2013-12-10

申请号：US12858531

申请日：2010-08-18

Applicant: Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

Inventor： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

IPC: H01M4/13 ,  H01M4/58 ,  H01M4/60 ,  H01M4/82 ,  H01M6/12 ,  H01M6/46 ,  B05D5/12

CPC classification number: H01M4/661 ,  H01G9/0029 ,  H01G9/0032 ,  H01G9/155 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

Abstract: Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.

Abstract translation: 提供了形成储能装置的方法和装置。 在一个实施例中，提供了一种生产能量存储装置的方法。 该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露， 使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物 气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

公开(公告)号：US20130243971A1

公开(公告)日：2013-09-19

申请号：US13420164

申请日：2012-03-14

Applicant: David Thompson ,  Pravin K. Narwankar ,  Swaminathan Srinivasan ,  Sukti Chatterjee ,  Abhilash Mayur ,  Kashif Maqsood

Inventor： David Thompson ,  Pravin K. Narwankar ,  Swaminathan Srinivasan ,  Sukti Chatterjee ,  Abhilash Mayur ,  Kashif Maqsood

IPC: C23C16/455 ,  C23C16/56

CPC classification number: C23C16/45551 ,  C23C16/45548 ,  C23C16/483

Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.

Abstract translation: 提供了原子层沉积装置和方法，包括气体分配板和发射与气体分配板相邻的激光束的至少一个激光源，以激活来自气体分配板的气态物质。 还提供了具有细长气体注入器端口的气体分配板，其中至少一个激光束沿着细长气体喷射器的长度被引导。

公开(公告)号：US20130192761A1

公开(公告)日：2013-08-01

申请号：US13754733

申请日：2013-01-30

Applicant: Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

Inventor： Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

IPC: C23C16/54 ,  B05C13/00

CPC classification number: C23C16/54 ,  B05C13/00 ,  C23C16/45551

Abstract: A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.

Abstract translation: 提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。 每个衬底位于设置在衬底支撑组件上的衬底载体上。 多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。 处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。 每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。 因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。 每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

公开(公告)号：US07794544B2

公开(公告)日：2010-09-14

申请号：US11925684

申请日：2007-10-26

Applicant: Son T. Nguyen ,  Kedarnath Sangam ,  Miriam Schwartz ,  Kenric Choi ,  Sanjay Bhat ,  Pravin K. Narwankar ,  Shreyas Kher ,  Rahul Sharangapani ,  Shankar Muthukrishnan ,  Paul Deaton

Inventor： Son T. Nguyen ,  Kedarnath Sangam ,  Miriam Schwartz ,  Kenric Choi ,  Sanjay Bhat ,  Pravin K. Narwankar ,  Shreyas Kher ,  Rahul Sharangapani ,  Shankar Muthukrishnan ,  Paul Deaton

IPC: C23C16/00 ,  E03B1/00 ,  F17D1/00 ,  F15C1/16

CPC classification number: C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

Abstract: The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

Abstract translation: 本发明的实施例描述了一种处理室，例如ALD室，其具有逐渐增加的直径的气体输送导管，以减少气体输送期间的焦耳汤普森效应，与衬底支撑件平齐的环形气体衬套以维持气体温度 并且减少到基板支撑体背面的气流，以及气体储存器，以允许控制输送处理气体。 直径逐渐增大的气体管道，环形气体衬套和气体储存器有助于保持气体温度稳定并减少颗粒的产生。

公开(公告)号：US06475854B2

公开(公告)日：2002-11-05

申请号：US09748072

申请日：2000-12-21

Applicant: Pravin K. Narwankar ,  Annabel Nickles ,  Xiaoliang Jin ,  Deepak Upadhyaya ,  Yaxin Wang

Inventor： Pravin K. Narwankar ,  Annabel Nickles ,  Xiaoliang Jin ,  Deepak Upadhyaya ,  Yaxin Wang

IPC: H01L218242

CPC classification number: H01L28/75 ,  H01L28/55

Abstract: A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

Abstract translation: 包括底电极，绝缘体和顶电极的电容器结构及其制造方法。 底部和顶部电极优选地包括金属部分和导电含氧金属部分。 在一个实施例中，沉积钌层以形成底部电极的一部分。 在沉积绝缘体之前，将钌在含氧环境中退火。 然后将绝缘体沉积在含氧钌层上。 顶部电极的形成包括在绝缘体上沉积第一金属，退火第一金属，然后沉积第二金属。 第一和第二金属可以是钌。

公开(公告)号：US06387761B1

公开(公告)日：2002-05-14

申请号：US09499336

申请日：2000-02-04

Applicant: Wong-Cheng Shih ,  Pravin K. Narwankar ,  Randall S. Urdahl ,  Turgut Sahin

Inventor： Wong-Cheng Shih ,  Pravin K. Narwankar ,  Randall S. Urdahl ,  Turgut Sahin

IPC: H01L218238

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3185 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H2). In a prefered embodiment of the present invention the ambient comprises H2 and N2.

Abstract translation: 描述了一种用于改善氮化硅膜和硅表面之间的界面的方法。 根据本发明，在衬底的硅表面上形成氮化硅膜。 当所述衬底被加热时，氮化硅膜暴露于包含氢气（H 2）的环境中。 在本发明的优选实施方案中，环境包括H 2和N 2。

公开(公告)号：US06218300B1

公开(公告)日：2001-04-17

申请号：US09097301

申请日：1998-06-12

Applicant: Pravin K. Narwankar ,  Turgut Sahin ,  Randall S. Urdahl ,  Ankineedu Velaga ,  Patricia Liu

Inventor： Pravin K. Narwankar ,  Turgut Sahin ,  Randall S. Urdahl ,  Ankineedu Velaga ,  Patricia Liu

IPC: H01L2144

CPC classification number: C23C16/405

Abstract: A method and apparatus for forming a titanium doped tantalum pentaoxide dielectric using a CVD process. According to the present invention a substrate is placed in the deposition chamber. A source of tantalum, a source of titanium, and an oxygen containing gas are then fed into the chamber. Thermal energy is used to decompose the source of tantalum to form tantalum atoms, and decompose the source of titanium to form titanium atoms in the deposition chamber. The titanium atoms, tantalum atoms and the oxygen containing gas then react to form a tantalum pentaoxide dielectric film doped with titanium.

Abstract translation: 使用CVD工艺形成掺杂钛的五氧化钽电介质的方法和装置。 根据本发明，将基板放置在沉积室中。 然后将钽源，钛源和含氧气体进料到室中。 热能用于分解钽源以形成钽原子，并且在沉积室中分解钛源以形成钛原子。 然后，钛原子，钽原子和含氧气体反应形成掺杂有钛的五氧化钽电介质膜。