公开(公告)号：US20130040447A1

公开(公告)日：2013-02-14

申请号：US13607386

申请日：2012-09-07

申请人： Shankar Swaminathan ,  Mandyam Sriram ,  Bart van Schravendijk ,  Pramod Subramonium ,  Adrien La Voie

发明人： Shankar Swaminathan ,  Mandyam Sriram ,  Bart van Schravendijk ,  Pramod Subramonium ,  Adrien La Voie

IPC分类号： H01L21/225 ,  B05C9/02 ,  B05C11/00

CPC分类号： C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348 ,  H01L21/2255 ,  H01L21/76831 ,  H01L21/76898 ,  H01L29/66803

摘要： Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.

摘要翻译： 这里公开的是在反应室中掺杂图案化衬底的方法。 所述方法可以包括形成第一共形膜层，其具有包括掺杂剂的掺杂剂源，并将一些掺杂剂驱动到衬底中以形成共形掺杂分布。 在一些实施方案中，形成第一膜层可以包括将掺杂剂前体引入反应室，在其形成吸附限制层的条件下吸附掺杂剂前体，并使吸附的掺杂剂前体反应形成掺杂剂源。 还公开了用于掺杂衬底的装置，其可以包括反应室，气体入口和具有机器可读代码的控制器，其具有包括用于操作气体入口以将掺杂剂前体引入反应室以使其被吸附的指令，以及指令 用于使吸附的掺杂剂前体反应以形成含有掺杂剂源的膜层。

公开(公告)号：US08741394B2

公开(公告)日：2014-06-03

申请号：US12970846

申请日：2010-12-16

申请人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： H05H1/24

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

摘要翻译： 描述了通过等离子体增强化学气相沉积沉积膜堆叠的方法。 在一个实例中，提供了一种用于在基底上沉积薄膜叠层的方法，其中薄膜叠层包括不同组成的薄膜，并且沉淀是在原位进行的。 该方法包括在第一等离子体活化膜沉积阶段中，在衬底上沉积具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

公开(公告)号：US08479683B2

公开(公告)日：2013-07-09

申请号：US13615318

申请日：2012-09-13

申请人： George Andrew Antonelli ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Pramod Subramonium

发明人： George Andrew Antonelli ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Pramod Subramonium

IPC分类号： B05C11/00

CPC分类号： H01L21/02112 ,  C23C16/342 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0234 ,  H01L29/4983 ,  H01L29/517 ,  H01L29/665 ,  H01L29/7843

摘要： A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride.

摘要翻译： 形成氮化硼或氮化硼介质的方法产生没有负载效应的共形层。 介电层通过基板上的含硼膜的化学气相沉积（CVD）形成，至少部分沉积不经等离子体进行，然后将沉积的含硼膜暴露于等离子体。 CVD组件主导沉积过程，产生不带负载效应的保形膜。 电介质是可灰化的，并且可以用氢等离子体除去而不会影响周围的材料。 与其它前端隔离物或诸如氧化硅或氮化硅的硬掩模材料相比，电介质具有低得多的湿蚀刻速率，并且具有比氮化硅低得多的介电常数。

公开(公告)号：US20110236594A1

公开(公告)日：2011-09-29

申请号：US12970846

申请日：2010-12-16

申请人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： C23C16/56 ,  H05H1/24 ,  C23C16/04 ,  B05D3/06

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

摘要翻译： 描述了用于在原位（即，没有真空断裂或空气曝光）在工艺工具中沉积薄膜叠层的方法和硬件。 在一个实例中，描述了一种在基板上使用等离子体在处理站中原位沉积包括不同组成的膜的膜堆叠的方法，所述方法包括在第一等离子体激活膜沉积阶段中沉积 在所述基板上具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

公开(公告)号：US08591659B1

公开(公告)日：2013-11-26

申请号：US12355601

申请日：2009-01-16

申请人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

发明人： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

IPC分类号： B08B9/08

CPC分类号： B08B7/0035 ,  B08B9/00 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).

摘要翻译： 提供了用于从沉积反应器的内表面除去残留物的改进的方法和装置。 这些方法涉及通过在远程等离子体发生器中产生清洁试剂自由基，然后在将清洁试剂混合物引入沉积室的同时进一步输送原位等离子体能量来增加沉积室内清洗剂自由基的可用性。 某些实施方案涉及多级方法，其包括其中以高压（例如，约0.6托或更高）引入清洗剂混合物的阶段，以及在低压（例如约0.6）下引入清洗试剂混合物的阶段 乇以下）。

公开(公告)号：US07915166B1

公开(公告)日：2011-03-29

申请号：US11710652

申请日：2007-02-22

申请人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

发明人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867

摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

摘要翻译： 在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。 密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。 具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅） 。 这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

公开(公告)号：US08669181B1

公开(公告)日：2014-03-11

申请号：US13032392

申请日：2011-02-22

申请人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

发明人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

IPC分类号： H01L21/44

CPC分类号： H01L21/3212 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867

摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

摘要翻译： 在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。 密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。 具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅） 。 这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

公开(公告)号：US08110493B1

公开(公告)日：2012-02-07

申请号：US12048967

申请日：2008-03-14

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/4763

CPC分类号： C23C16/26 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332

摘要： A method for forming a PECVD deposited amorphous carbon or ashable hard mask (AHM) in a trench or a via with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks with high selectivity and little or no hard mask on the sidewalls. The deposition method utilizes a pulsed precursor delivery with a plasma etch while the precursor flow is off.

摘要翻译： 在低于500℃（例如约400℃）的过程温度下，在沟槽或通孔中形成具有小于30％H含量的PECVD沉积的无定形碳或可灰化硬掩模（AHM）的方法产生低H含量 具有高选择性的硬掩模和侧壁上的很少或没有硬掩模。 沉积方法利用等离子体蚀刻的脉冲前驱物传输，同时前体流离开。

公开(公告)号：US07381644B1

公开(公告)日：2008-06-03

申请号：US11318269

申请日：2005-12-23

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/44

CPC分类号： H01L21/02115 ,  C23C16/26 ,  C23C16/515 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/3146 ,  Y10S438/942

摘要： A method for forming a PECVD deposited ashable hardmask (AHM) with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks having the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The low temperature, low H films are produced by use of a pulsed film hydrocarbon precursor plasma treatment that reduces the amount of hydrogen incorporated in the film and therefore drives down the etch rate of the hard mask thus increasing the selectivity. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

摘要翻译： 在低于500℃（例如约400℃）的过程温度下形成具有小于30％H含量的PECVD沉积的可吸入硬掩模（AHM）的方法产生具有高选择性的低H含量硬掩模 硬掩模膜到底层以便成功地整合膜，并且适用于需要193nm生成和低于光刻方案，其中需要硬掩模到底层的高选择性。 通过使用脉冲膜烃前体等离子体处理来生产低温低H膜，其减少了掺入膜中的氢的量，因此降低了硬掩模的蚀刻速率，从而提高了选择性。 较低的温度过程还可以降低晶片的整体热预算。

公开(公告)号：US07981810B1

公开(公告)日：2011-07-19

申请号：US11449983

申请日：2006-06-08

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/31

CPC分类号： H01L21/3146 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

摘要： The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon precursor gas flows and/or low process temperatures. The AHMs produced are transparent (having absorption coefficients of less than 0.1 in certain embodiments). The AHMs also have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

摘要翻译： 本发明通过提供一种用于形成对下层具有高等离子体蚀刻选择性的透明PECVD沉积可吸入硬掩模（AHM）的方法来满足这一需要。 本发明的方法包括使用稀烃前体气流和/或低工艺温度沉积AHM。 所生产的AHM是透明的（在某些实施方案中吸收系数小于0.1）。 AHM还具有硬掩模膜对下层的高选择性，成功地将薄膜整合的性质，并且适用于193nm生成和低于光刻方案的应用，其中硬掩模对下层的高选择性为 需要。 较低的温度过程还可以降低晶片的整体热预算。