公开(公告)号：US20050217799A1

公开(公告)日：2005-10-06

申请号：US10813119

申请日：2004-03-31

申请人： David O'Meara ,  Gerrit Leusink ,  Stephen Cabral ,  Anthony Dip ,  Cory Wajda ,  Raymond Joe

发明人： David O'Meara ,  Gerrit Leusink ,  Stephen Cabral ,  Anthony Dip ,  Cory Wajda ,  Raymond Joe

IPC分类号： C23F1/00 ,  H01L21/00

CPC分类号： H01L21/67109 ,  H01J2237/2001

摘要： A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon ‘wire’ or ‘braided’ structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.

摘要翻译： 描述了具有用于单个晶片处理系统的唯一加热器元件的晶片加热组件。 加热单元包括封装在石英鞘中的碳线元件。 加热单元与石英无污染，允许直接接触晶片。 碳线或“编织”结构的机械灵活性允许线圈构造，其允许跨晶片的独立加热器区域控制。 跨晶片的多个独立的加热器区域可以允许温度梯度调节膜生长/沉积均匀性和快速的热调节，其膜均匀性优于常规单晶片系统，并且最小至无晶片翘曲。 低热质量允许快速的热响应，其实现脉冲或数字热处理，其导致逐层成膜以改善薄膜控制。

公开(公告)号：US07737051B2

公开(公告)日：2010-06-15

申请号：US10797876

申请日：2004-03-10

申请人： Anthony Dip ,  Pradip K. Roy ,  Sanjeev Kaushal ,  Allen J. Leith ,  Seungho Oh ,  Raymond Joe

发明人： Anthony Dip ,  Pradip K. Roy ,  Sanjeev Kaushal ,  Allen J. Leith ,  Seungho Oh ,  Raymond Joe

IPC分类号： H01L21/36

CPC分类号： H01L21/31604 ,  H01L21/02142 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3185 ,  Y10T29/41

摘要： A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.

摘要翻译： 一种使用硅锗（SiGe）表面层将高k电介质层集成到半导体器件中的方法。 该方法在衬底上形成SiGe表面层，并在SiGe表面层上沉积高k电介质层。 在高k电介质层的沉积和沉积高k电介质层之间的退火工艺中的一个或两个期间，形成位于高k电介质层和SiGe表面层的未反应部分之间的氧化物层 。 该方法还包括在高k电介质层上形成电极层。

公开(公告)号：US20070259534A1

公开(公告)日：2007-11-08

申请号：US11745278

申请日：2007-05-07

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/303 ,  C23C16/56

摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.

摘要翻译： 提供了一种在衬底上原位形成薄的氧化AlN膜的方法。 该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。 后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。 该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。

公开(公告)号：US07235440B2

公开(公告)日：2007-06-26

申请号：US10630969

申请日：2003-07-31

申请人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David L O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： H01L21/8242

CPC分类号： H01L21/28194 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28167 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.

摘要翻译： 使用低压处理形成超薄氧化层，以实现衬底的自限制氧化并提供超薄氧化物。 待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。 处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。 本发明的一个实施例提供了Si衬底的自限制氧化，其导致厚度为约15A的SiO 2层，其中SiO 2层的厚度 在基材上变化小于约1A。

公开(公告)号：US20070042570A1

公开(公告)日：2007-02-22

申请号：US11206199

申请日：2005-08-18

申请人： Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/28 ,  C23C16/4408 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3185

摘要： A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film to reduce the chlorine content of the Si film. The Si film may be deposited selectively or non-selectively on the substrate and the deposition may be self-limiting or non-self-limiting. Other embodiments provide a method for forming SiGe films in a sequential deposition process.

摘要翻译： 提供了用于在顺序沉积工艺中形成Si膜的方法。 该方法包括在处理室中提供衬底，通过将衬底暴露于氯化硅烷气体形成氯化Si膜，并干蚀刻氯化Si膜以降低Si膜的氯含量。 Si膜可以选择性地或非选择性沉积在衬底上，并且沉积可以是自限制性的或非限制性的。 其他实施例提供了在顺序沉积工艺中形成SiGe膜的方法。

公开(公告)号：US06869892B1

公开(公告)日：2005-03-22

申请号：US10767470

申请日：2004-01-30

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki ,  David Paul Brunco ,  Steven Robert Soss ,  Anthony Dip

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki ,  David Paul Brunco ,  Steven Robert Soss ,  Anthony Dip

IPC分类号： C23C8/10 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/02238 ,  C23C8/10 ,  H01L21/02255 ,  H01L21/31662

摘要： A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.

摘要翻译： 根据本发明的氧化工件的方法包括以下步骤：在具有预定长度并且能够形成真空的处理容器22中容纳多个工件W，在工作气氛中氧化工件的表面 包括通过将氧化性气体和还原性气体供应到处理容器中以与气体相互作用而产生的活性氧和活性羟基。 氧化性气体和还原气体分别沿长度方向供给到处理容器内。 部分还原气体从位于处理容器的纵向方向上的分开位置的至少两个或多个独立控制的气体喷嘴另外供应。 通过每个喷嘴的气体流速根据由处理容器中的产品晶片，虚拟晶片和监视晶片组成的工件的任何组合来设定。

公开(公告)号：US08465591B2

公开(公告)日：2013-06-18

申请号：US12491313

申请日：2009-06-25

申请人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

发明人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/00

CPC分类号： C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

公开(公告)号：US20110241085A1

公开(公告)日：2011-10-06

申请号：US12751891

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

IPC分类号： H01L29/78 ,  H01L21/311

CPC分类号： H01L29/4983 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.

摘要翻译： 提供了具有双侧壁间隔件和成形方法的半导体器件。 该方法包括：在图案化结构上沉积第一间隔层，第一间隔层具有在衬底的表面的界面区附近传播穿过第一间隔层的厚度的接缝和图案化结构的侧壁，蚀刻 第一间隔层，以在界面区域处形成残留间隔物，其中残余间隔物涂覆小于图案化结构的侧壁的整体，在剩余间隔物上和在图案化结构的侧壁上沉积第二间隔层， 所述剩余间隔物，所述第二间隔层在所述残余间隔物的接缝上是无缝的，并且蚀刻所述第二间隔层以形成涂覆所述剩余间隔物并涂覆未被所述残留间隔物涂覆的所述图案化结构的侧壁的第二间隔物。

公开(公告)号：US07910494B2

公开(公告)日：2011-03-22

申请号：US11277814

申请日：2006-03-29

申请人： Anthony Dip ,  Eric J. Malstrom

发明人： Anthony Dip ,  Eric J. Malstrom

IPC分类号： H01L21/31 ,  C30B23/03

CPC分类号： H01L21/0214 ,  C30B25/14 ,  C30B31/16 ,  C30B35/00 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/324 ,  H01L21/67109 ,  Y10S438/935

摘要： A gas delivery system for supplying a process gas from a gas supply to a thermal processing furnace, a thermal processing furnace equipped with the gas delivery system, and methods for delivering process gas to a thermal processing furnace. The gas delivery system comprises a plurality of regulators, such as mass flow controllers, in a process gas manifold coupling a gas supply with a thermal processing furnace. The regulators establish a corresponding plurality of flows of a process gas at a plurality of flow rates communicated by the process gas manifold to the thermal processing furnace. The gas delivery system may be a component of the thermal processing furnace that further includes a liner that surrounds a processing space inside the thermal processing furnace.

摘要翻译： 一种用于将气体从气体供给到热处理炉的气体输送系统，配备有气体输送系统的热处理炉，以及将处理气体输送到热处理炉的方法。 气体输送系统包括多个调节器，例如质量流量控制器，其在将气体供应与热处理炉连接的工艺气体歧管中。 调节器以工艺气体歧管连接到热处理炉的多个流速建立相应的多个工艺气体流。 气体输送系统可以是热处理炉的组件，其还包括围绕热处理炉内的处理空间的衬套。

公开(公告)号：US07524769B2

公开(公告)日：2009-04-28

申请号：US11094462

申请日：2005-03-31

申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

IPC分类号： H01L21/302

CPC分类号： H01L21/02046 ,  C23C16/0245 ,  C23C16/46 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/3185 ,  H01L21/76814

摘要： A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber, and exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about 900° C. to remove the oxide layer from the substrate. The substrate is then maintained at a second temperature different than the first substrate temperature, and a silicon-containing film is formed on the substrate at the second substrate temperature.

摘要翻译： 用于处理衬底的方法和系统包括在处理室中提供衬底，其中衬底包含其上形成的氧化物层，激发耦合到处理室的远程等离子体源中的含氢气体，并将衬底暴露于 在低于约900℃的第一衬底温度下激发含氢气体的流动，以从衬底去除氧化物层。 然后将衬底保持在不同于第一衬底温度的第二温度，并且在第二衬底温度下在衬底上形成含硅膜。