公开(公告)号：US20230352577A1

公开(公告)日：2023-11-02

申请号：US18171029

申请日：2023-02-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter MOENS ,  Balaji PADMANABHAN ,  Dean E. PROBST ,  Prasad VENKATRAMAN ,  Tirthajyoti SARKAR ,  Gary Horst LOECHELT

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/06

CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66734

Abstract: An accumulation MOSFET includes a plurality of device cells. Each device cell includes a mesa adjoining a vertical trench is disposed in a doped semiconductor substrate. The mesa has a top mesa portion disposed on a bottom mesa portion. The top mesa portion has a width that is narrower than a width of the bottom mesa portion. The vertical trench adjoining the mesa has a top trench portion and a bottom trench portion. The top trench portion has a width that is wider than a width of the bottom trench portion. A dielectric is disposed on a sidewall of the vertical trench. A gate electrode disposed in the top trench portion forms an accumulation channel region in the top mesa portion and a shield electrode disposed in the bottom trench portion forms a depletion drift region in the bottom mesa portion.

公开(公告)号：US20230282732A1

公开(公告)日：2023-09-07

申请号：US17653226

申请日：2022-03-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Zia HOSSAIN ,  Dean E. PROBST ,  Peter A. BURKE ,  Sauvik CHOWDHURY

IPC: H01L29/66 ,  H01L29/40

CPC classification number: H01L29/66734 ,  H01L29/401 ,  H01L29/407

Abstract: A process of forming an electronic device can form an accumulation channel or an integrated diode by selective doping parts of a workpiece. In an embodiment, a doped region can be formed by implanting a sidewall of a body region. In another embodiment, a doped region can correspond to a remaining portion of a semiconductor layer after forming another doped region by implanting into a contact opening. The accumulation channel or the integrated diode can lower the barrier for a body diode turn-on. Reduced stored charge and QRR may be achieved, leading to lower switching losses.

公开(公告)号：US20230253468A1

公开(公告)日：2023-08-10

申请号：US17650456

申请日：2022-02-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Zia HOSSAIN ,  Balaji PADMANABHAN ,  Christopher Lawrence REXER ,  Gordon M. GRIVNA ,  Sauvik CHOWDHURY

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/4236 ,  H01L29/7813 ,  H01L29/7811 ,  H01L29/408 ,  H01L29/66734

Abstract: In one general aspect, an apparatus can include a substrate having a semiconductor region, and a trench defined in the semiconductor region and having a sidewall. The apparatus can include a shield electrode disposed in the trench and insulated from the sidewall of the trench by a shield dielectric, the shield dielectric having a low-k dielectric portion and a high-k dielectric portion. The apparatus can include a gate electrode disposed in the trench and at least partially surrounded by a gate dielectric, and an inter-electrode dielectric disposed between the shield electrode and the gate electrode.

公开(公告)号：US20180026630A1

公开(公告)日：2018-01-25

申请号：US15215310

申请日：2016-07-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume ROIG-GUITART ,  Balaji PADMANABHAN ,  Prasad VENKATRAMAN

IPC: H03K17/687 ,  H01L29/20 ,  H01L29/778

CPC classification number: H03K17/165 ,  H03K2217/0036 ,  H03K2217/0054

Abstract: A circuit can include a first transistor including a source and a gate; a second transistor including a drain and a gate, wherein the source of the first transistor is coupled to the drain of the second transistor; and a switchable element. In one embodiment, a first current-carrying terminal of the switchable element is coupled to the gate of the first transistor, and a second current-carrying terminal of the switchable element is coupled to the gate of the second transistor. In another embodiment, the switchable element is coupled to the gate of the first transistor and includes a first selectable terminal of the switchable element coupled to a source of the second transistor, and a second selectable terminal of the switchable element coupled to the gate of the second transistor. In a particular embodiment, the circuit can be a cascode circuit

公开(公告)号：US20170309617A1

公开(公告)日：2017-10-26

申请号：US15648264

申请日：2017-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Woochul JEON ,  Jason MCDONALD

IPC: H01L27/06 ,  H01L21/8258 ,  H01L23/367 ,  H01L27/02 ,  H01L29/417 ,  H01L21/74 ,  H01L29/10 ,  H01L29/778 ,  H01L29/872 ,  H01L23/48 ,  H01L29/20 ,  H01L29/861

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is configured as a two terminal device.

公开(公告)号：US20220310813A1

公开(公告)日：2022-09-29

申请号：US17653235

申请日：2022-03-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Zia HOSSAIN ,  Balaji PADMANABHAN ,  Sauvik CHOWDHURY

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40

Abstract: A device includes a mesa disposed between a pair of vertical trenches in a semiconductor substrate. A gate electrode is disposed in each of the pair of vertical trenches, and a shield electrode is disposed below each of the gate electrodes in the pair of vertical trenches. The device further includes a bridge connection trench traversing the mesa. The bridge connection trench is in fluid communication with each of the pair of vertical trenches. A bridge shield electrode is disposed in the bridge connection trench and is coupled to the shield electrode disposed below each of the gate electrodes in the pair of vertical trenches.

公开(公告)号：US20190123041A1

公开(公告)日：2019-04-25

申请号：US16215870

申请日：2018-12-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Jason MCDONALD ,  Ali SALIH ,  Alexander YOUNG

IPC: H01L27/06 ,  H01L29/10 ,  H01L27/02 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L21/74 ,  H01L21/8258

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the first current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the second current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.

公开(公告)号：US20180061998A1

公开(公告)日：2018-03-01

申请号：US15254837

申请日：2016-09-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN

IPC: H01L29/808 ,  H01L29/20 ,  H01L29/423 ,  H01L29/43 ,  H01L29/40 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/8083 ,  H01L29/0653 ,  H01L29/1066 ,  H01L29/1602 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/2203 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/66909 ,  H01L29/66924

Abstract: An electronic device comprising a bidirectional JFET can include a drain/source region; a lightly doped semiconductor layer overlying the drain/source region; a source/drain region overlying the lightly doped semiconductor layer; a trench extending through the source/drain region and into the lightly doped semiconductor layer; a gate electrode of the bidirectional JFET within the trench; and a field electrode within the trench. A process of forming an electronic device can include providing a workpiece including a first doped region and a lightly doped semiconductor layer overlying the first doped region; defining a trench extending into the lightly doped semiconductor layer; forming a gate electrode within the trench, wherein the gate electrode extends to a sidewall of the trench; and forming a field electrode within the trench, wherein a bidirectional JFET includes the first doped region, the lightly doped semiconductor layer, a second doped region, and the gate electrode.

公开(公告)号：US20180033877A1

公开(公告)日：2018-02-01

申请号：US15730897

申请日：2017-10-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter MOENS ,  Balaji PADMANABHAN ,  Herbert DE VLEESCHOUWER ,  Prasad VENKATRAMAN

IPC: H01L29/747 ,  H01L23/495 ,  H01L23/00 ,  H01L25/11 ,  H01L29/205 ,  H01L29/74 ,  H03K17/687 ,  H01L29/778 ,  H01L29/423 ,  H01L29/40 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/088

CPC classification number: H01L29/747 ,  H01L21/8258 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L25/115 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/205 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7416 ,  H01L29/742 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K2217/0009 ,  H03K2217/0018 ,  H01L2224/37099

Abstract: An electronic device can include a bidirectional HEMT. In an aspect, the electronic device can include a pair of switch gate and blocking gate electrodes, wherein the switch gate electrodes are not electrically connected to the blocking gate electrodes, and the first blocking, first switch, second blocking, and second switch gate electrodes are on the same die. In another aspect, the electronic device can include shielding structures having different numbers of laterally extending portions. In a further aspect, the electronic device can include a gate electrode and a shielding structure, wherein a portion of the shielding structure defines an opening overlying the gate electrode.

公开(公告)号：US20170317072A1

公开(公告)日：2017-11-02

申请号：US15648211

申请日：2017-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Jason MCDONALD ,  Ali SALIH ,  Alexander YOUNG

IPC: H01L27/06 ,  H01L21/8258 ,  H01L23/367 ,  H01L27/02 ,  H01L29/417 ,  H01L21/74 ,  H01L29/10 ,  H01L29/778 ,  H01L29/872 ,  H01L23/48 ,  H01L29/20 ,  H01L29/861

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the second current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the first current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.