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    AMORPHOUS SILICON BASED LASER DOPED SOLAR CELLS
    12.
    发明申请
    AMORPHOUS SILICON BASED LASER DOPED SOLAR CELLS 审中-公开
    基于无定形硅的激光掺杂太阳能电池

    公开(公告)号：US20160190382A1

    公开(公告)日：2016-06-30

    申请号：US14825163

    申请日：2015-08-12

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur

    IPC: H01L31/18 ,  H01L31/0376

    CPC classification number: H01L31/1864 ,  H01L21/2257 ,  H01L21/268 ,  H01L31/03762 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A passivated surface and base and emitter regions in a silicon substrate are formed. Intrinsic amorphous silicon is formed on first surface of a silicon substrate. A first dopant is formed on the intrinsic amorphous silicon. A first laser beam is applied through the first dopant and forms a first doped region in the silicon substrate. A second dopant is formed on the intrinsic amorphous silicon. A second laser beam is applied through the second dopant and forms a second doped region in the silicon substrate.

    Abstract translation: 形成硅衬底中的钝化表面和基极和发射极区域。 在硅衬底的第一表面上形成本征非晶硅。 在本征非晶硅上形成第一掺杂剂。 通过第一掺杂剂施加第一激光束，并在硅衬底中形成第一掺杂区域。 在本征非晶硅上形成第二掺杂剂。 通过第二掺杂剂施加第二激光束，并在硅衬底中形成第二掺杂区域。

    MONOLITHIC SOLAR CELL ARRAYS AND FABRICATION METHODS
    15.
    发明申请
    MONOLITHIC SOLAR CELL ARRAYS AND FABRICATION METHODS 审中-公开
    单晶太阳能电池阵列和制造方法

    公开(公告)号：US20150207002A1

    公开(公告)日：2015-07-23

    申请号：US14475566

    申请日：2014-09-02

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Michael Wingert ,  Jay Ashjaee ,  Pawan Kapur ,  Homi Fatemi

    IPC: H01L31/0465 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0224

    CPC classification number: H01L31/0465 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

    Abstract: Solar cell array solutions including monolithic solar cell arrays and fabrication methods. A first patterned cell metallization contacts base and emitter regions of each of a plurality of solar cells having a light receiving frontside and a backside. An electrically insulating continuous backplane layer is attached to the backside of the solar cells and covers the first cell metallization of each of the solar cells. Via holes through the continuous backplane layer provide access to the first cell metallization. A second cell metallization is connected to the first cell metallization of each of the solar cells and electrically interconnects the solar cells in the array.

    Abstract translation: 太阳能电池阵列解决方案，包括单片太阳能电池阵列和制造方法。 第一图案化电池金属化接触具有光接收前侧和后侧的多个太阳能电池中的每一个的基极和发射极区域。 电绝缘的连续背板层连接到太阳能电池的背面并且覆盖每个太阳能电池的第一电池金属化。 穿过连续背板层的通孔提供对第一电池金属化的访问。 第二电池金属化连接到每个太阳能电池的第一电池金属化，并将阵列中的太阳能电池电互连。

    DISCONTINUOUS EMITTER AND BASE ISLANDS FOR BACK CONTACT SOLAR CELLS
    16.
    发明申请
    DISCONTINUOUS EMITTER AND BASE ISLANDS FOR BACK CONTACT SOLAR CELLS 审中-公开
    反接触式太阳能电池不连续的发射器和基座

    公开(公告)号：US20150200313A1

    公开(公告)日：2015-07-16

    申请号：US14596213

    申请日：2015-01-13

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer

    IPC: H01L31/0224 ,  H01L31/0725

    CPC classification number: H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Back contact solar cells having a discontinuous emitter comprising a plurality of emitter islands are provided. The back contact solar cell comprises a semiconductor layer with a background base doping and having a sunlight-receiving frontside and a backside opposite said sunlight-receiving frontside. An emitter layer having a doping opposite said semiconductor layer background doping is positioned on the semiconductor layer backside. A trench isolation pattern partitions the emitter layer and semiconductor layer into a plurality of discontinuous emitter regions on the semiconductor layer backside. At least one base island region contacting the semiconductor layer is positioned within each of the discontinuous emitter regions on the semiconductor layer backside.

    Abstract translation: 提供具有包括多个发射岛的不连续发射体的背接触太阳能电池。 背接触太阳能电池包括具有背景基底掺杂并具有阳光接收的前沿和与阳光接收的前侧相对的背面的半导体层。 具有与所述半导体层背景掺杂相反的掺杂的发射极层位于半导体层背面。 沟槽隔离图案将发射极层和半导体层分隔成半导体层背面上的多个不连续发射极区域。 接触半导体层的至少一个基岛区域位于半导体层背面的每个不连续发射极区域内。

    SOLAR PHOTOVOLTAIC BLINDS AND CURTAINS FOR RESIDENTIAL AND COMMERCIAL BUILDINGS
    19.
    发明申请
    SOLAR PHOTOVOLTAIC BLINDS AND CURTAINS FOR RESIDENTIAL AND COMMERCIAL BUILDINGS 审中-公开
    住宅和商业建筑的太阳光伏窗帘和窗帘

    公开(公告)号：US20150101761A1

    公开(公告)日：2015-04-16

    申请号：US14275869

    申请日：2014-05-12

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Pawan Kapur

    IPC: F24J2/04 ,  F24J2/10

    CPC classification number: F24S20/60 ,  E06B9/386 ,  E06B2009/2476 ,  F24S23/82 ,  H01L31/042 ,  H01L31/048 ,  H02S30/20 ,  Y02B10/10 ,  Y02E10/50

    Abstract: Solar photovoltaic window blind slats for power generation from internal and external light sources are provided are provided. A plurality of solar cells are attached to at least two sides of a slat core. Distributed maximum power point tracking optimizer components are associated with each solar cell. The solar cells and corresponding distributed maximum power point tracking optimizer components on each slat side are connected in electrical series.

    Abstract translation: 提供了用于从内部和外部光源发电的太阳能光伏窗帘板条。 多个太阳能电池连接到板条芯的至少两侧。 分布式最大功率点跟踪优化器组件与每个太阳能电池相关联。 每个板条侧的太阳能电池和相应的分布式最大功率点跟踪优化器组件以电串联连接。

    SOLAR CELL METALLIZATION
    20.
    发明申请
    SOLAR CELL METALLIZATION 有权
    太阳能电池金属化

    公开(公告)号：US20150068592A1

    公开(公告)日：2015-03-12

    申请号：US14260272

    申请日：2014-04-23

    Applicant: Solexel, Inc.

    Inventor： Swaroop Kommera ,  Pawan Kapur ,  Yen-Sheng Su ,  Vivek Saraswat ,  Anand Deshpande ,  Mehrdad M. Moslehi

    IPC: H01L31/02

    CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50

    Abstract: An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M1) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M2) layer is connected to the first level metal (M1) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M2). The substantially parallel interdigitated metallization of M1 collects carriers of opposite polarity of the corresponding busbar.

    Abstract translation: 提供了交错的背接触太阳能电池。 太阳能电池包括具有光接收前侧的太阳能电池基板和包括基极和发射极区域的背面。 第一级金属（M1）层位于接触基极和发射极区域的衬底背面。 第二级金属（M2）层连接到第一级金属（M1）层，并且包括基极母线和发射极母线。 第一级金属包括位于第二级金属（M2）上的基极和发射极母线之下并对应于基本上正交叉指金属化的基本上平行的叉指金属化。 M1的基本上平行的叉指金属化收集相应母线相反极性的载体。

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