公开(公告)号：US20140021883A1

公开(公告)日：2014-01-23

申请号：US13931359

申请日：2013-06-28

Applicant: Soraa, Inc.

Inventor： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames

IPC: H05B37/02

CPC classification number: H05B37/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/16 ,  H01L2224/48

Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

Abstract translation: 发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。

公开(公告)号：USRE47711E1

公开(公告)日：2019-11-05

申请号：US14882893

申请日：2015-10-14

Applicant: SORAA, INC.

Inventor： James W. Raring ,  Eric M. Hall ,  Mark P. D'Evelyn

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/32 ,  H01L33/54 ,  H01L33/58 ,  H01L33/16

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

公开(公告)号：US20190067517A1

公开(公告)日：2019-02-28

申请号：US15991951

申请日：2018-05-29

Applicant: SORAA, INC.

Inventor： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J.F. David

IPC: H01L33/20 ,  H01L33/40 ,  H01L33/32 ,  H05B33/08 ,  H01L33/02 ,  H01L33/16 ,  H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

公开(公告)号：US20180013036A1

公开(公告)日：2018-01-11

申请号：US15700562

申请日：2017-09-11

Applicant: SORAA, INC.

Inventor： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J.F. David

IPC: H01L33/20 ,  H01L33/32 ,  H01L33/16 ,  H05B33/08 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

公开(公告)号：US09653554B2

公开(公告)日：2017-05-16

申请号：US14805278

申请日：2015-07-21

Applicant: SORAA, INC.

Inventor： Mark P. D'Evelyn ,  Michael Ragan Krames

IPC: B32B3/02 ,  H01L29/20 ,  H01L29/04 ,  H01L29/36 ,  H01L21/78 ,  H01L31/00 ,  H01L33/32

CPC classification number: C30B25/18 ,  C30B23/025 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/7813 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/36 ,  H01L31/00 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/3013 ,  Y02E10/544

Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

公开(公告)号：US09589792B2

公开(公告)日：2017-03-07

申请号：US14089281

申请日：2013-11-25

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Mark P. D'Evelyn ,  Derrick S. Kamber ,  Dirk Ehrentraut ,  Michael Krames

IPC: H01L29/20 ,  H01L21/02 ,  H01L33/00 ,  C30B7/10 ,  C30B29/40

CPC classification number: H01L21/0254 ,  C30B7/105 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0075

Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

Abstract translation: 公开了具有局部近似线性的穿透位错阵列的高品质氨热III族金属氮化物晶体，制造高品质氨热III族金属氮化物晶体的方法，以及使用这种晶体的方法。 该晶体可用于种子块状晶体生长，并且用作发光二极管，激光二极管，晶体管，光电探测器，太阳能电池和用于氢发生器件的光电化学水分解的衬底。

公开(公告)号：US09543392B1

公开(公告)日：2017-01-10

申请号：US14485516

申请日：2014-09-12

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Mark P. D'Evelyn

IPC: H01L33/00 ,  H01L29/20 ,  C30B29/40 ,  H01L29/04 ,  H01L29/36 ,  H01L21/02 ,  C30B7/10

CPC classification number: H01L29/2003 ,  C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/045 ,  H01L29/36 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/32

Abstract: Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.

Abstract translation: 公开了用作用于制造用于电子和/或光电应用的GaN器件的基板的大面积，低成本的单晶透明含镓氮化物晶体。 含氮氮化物晶体是通过控制在氨热生长和加工过程中的杂质浓度来控制点缺陷物质的相对浓度而形成的。

公开(公告)号：US08956894B2

公开(公告)日：2015-02-17

申请号：US14035693

申请日：2013-09-24

Applicant: Soraa, Inc.

Inventor： James W. Raring ,  Eric M. Hall ,  Mark P. D'Evelyn

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/32 ,  H01L33/16 ,  H01L33/54 ,  H01L33/58

CPC classification number: H01L33/502 ,  H01L33/16 ,  H01L33/32 ,  H01L33/54 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01037 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract translation: 封装的光学器件包括具有在半极性或非极性GaN衬底上制造的发光二极管器件的表面区域的衬底。 发光二极管发射偏振光，其特征在于重叠的电子波函数和空穴波函数。 封装内的荧光体被偏振光激发，并且响应地发射第二波长的电磁辐射。

公开(公告)号：US20140027789A1

公开(公告)日：2014-01-30

申请号：US14040379

申请日：2013-09-27

Applicant: SORAA, INC.

Inventor： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J.F. David

IPC: H01L33/02

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

Abstract translation: 发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该装置具有横向尺寸和厚的垂直尺寸，使得几何纵横比形成体积二极管，其在横向尺寸的范围内传递几乎均匀的电流密度。

公开(公告)号：US20200087813A1

公开(公告)日：2020-03-19

申请号：US16550947

申请日：2019-08-26

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B7/10 ,  H01L21/02 ,  C30B29/40 ,  C30B19/12 ,  C30B19/06 ,  C30B33/06 ,  C30B25/18 ,  C30B25/02 ,  H01L29/20

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.