公开(公告)号：US20200287081A1

公开(公告)日：2020-09-10

申请号：US16884674

申请日：2020-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byunghoon NA ,  Changyoung Park ,  Yonghwa Park

IPC: H01L33/06 ,  G02F1/017 ,  H01L33/04 ,  H01L33/30 ,  H01L33/60

Abstract: Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.

公开(公告)号：US10304896B2

公开(公告)日：2019-05-28

申请号：US15870022

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L21/00 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/109 ,  A61B5/00 ,  G01N21/3554 ,  G01J1/44 ,  H01L31/0304 ,  G01J5/04 ,  B82Y20/00 ,  G01J5/02 ,  H01L31/0384 ,  H01L31/101 ,  H01L31/105 ,  G01J5/08

Abstract: An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

公开(公告)号：US09740032B2

公开(公告)日：2017-08-22

申请号：US15050911

申请日：2016-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Byunghoon Na ,  Yonghwa Park

IPC: G02F1/03 ,  H01S5/00 ,  G02F1/017 ,  H01S5/10 ,  H01S5/062 ,  H01S5/20 ,  H01S5/187 ,  H01S5/0625

CPC classification number: G02F1/017 ,  G02F2201/346 ,  G02F2201/38 ,  G02F2202/101 ,  G02F2203/11 ,  H01S5/06226 ,  H01S5/06256 ,  H01S5/10 ,  H01S5/1021 ,  H01S5/1042 ,  H01S5/187 ,  H01S5/20 ,  H01S5/2013

Abstract: An optical modulator is provided, including a lower reflection layer, an active layer formed on the lower reflection layer, and an upper reflection layer formed on the active layer. The active layer includes a multiple quantum well structure including a quantum well layer and a quantum barrier layer. The upper reflection layer includes a dielectric material. A plurality of micro cavity layers are included in the upper reflection layer.

公开(公告)号：US09417468B2

公开(公告)日：2016-08-16

申请号：US14677027

申请日：2015-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Byunghoon Na ,  Yonghwa Park

IPC: G02F1/035 ,  G02F1/017 ,  G02B6/124 ,  G02F1/015

CPC classification number: G02F1/01708 ,  G02B6/12002 ,  G02B6/124 ,  G02B6/134 ,  G02B2006/12104 ,  G02B2006/12128 ,  G02B2006/12142 ,  G02F1/017 ,  G02F1/01716 ,  G02F1/01725 ,  G02F2001/0155 ,  G02F2001/01733 ,  G02F2001/01741 ,  G02F2201/307 ,  G02F2202/108

Abstract: Provided are a transmission type high-absorption optical modulator and a method of manufacturing the transmission type high-absorption optical modulator. The optical modulator includes: a substrate; a lower distributed Bragg reflector (DBR) layer on the substrate; a lower clad layer on the lower DBR layer; an active layer that is formed on the lower clad layer and includes a quantum well layer and a quantum barrier layer; an upper clad layer on the active layer; an upper DBR layer on the upper clad layer; and a doping layer that supplies carriers to the quantum well layer. In the optical modulator, the doping layer may be included in the quantum barrier layer or in at least one of the upper and lower clad layers.

Abstract translation: 提供一种透射型高吸收光调制器和制造透射型高吸收光调制器的方法。 光调制器包括：基板; 在基板上的下分布布拉格反射器（DBR）层; 下DBR层上的下包层; 形成在下包层上并包含量子阱层和量子势垒层的有源层; 有源层上的上覆层; 在上包层上的上DBR层; 以及向载流子提供量子阱层的掺杂层。 在光调制器中，掺杂层可以包括在量子势垒层中或在上包层和下包层中的至少一个中。

公开(公告)号：US11978827B2

公开(公告)日：2024-05-07

申请号：US17976419

申请日：2022-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/04 ,  H01L33/58

CPC classification number: H01L33/30 ,  H01L33/0066 ,  H01L33/04 ,  H01L33/58

Abstract: An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.

公开(公告)号：US20210242362A1

公开(公告)日：2021-08-05

申请号：US16918485

申请日：2020-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/0352

Abstract: Provided are an infrared detecting device and an infrared detecting system including the infrared detecting device. The infrared detecting device includes at least one infrared detector, and the at least one infrared detector includes a substrate, a buffer layer, and at least one light absorbing portion. The buffer layer includes a superlattice structure.

公开(公告)号：US11069738B2

公开(公告)日：2021-07-20

申请号：US16384014

申请日：2019-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Sanghun Lee

IPC: H01L21/00 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/109 ,  A61B5/00 ,  G01N21/3554 ,  G01J1/44 ,  H01L31/0304 ,  G01J5/04 ,  B82Y20/00 ,  G01J5/02 ,  H01L31/0384 ,  H01L31/101 ,  H01L31/105 ,  G01J5/08

Abstract: An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

公开(公告)号：US10727370B2

公开(公告)日：2020-07-28

申请号：US15332528

申请日：2016-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byunghoon Na ,  Changyoung Park ,  Yonghwa Park

IPC: H01L33/06 ,  G02F1/017 ,  H01L33/04 ,  H01L33/30 ,  H01L33/60

Abstract: Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.

公开(公告)号：US10367332B2

公开(公告)日：2019-07-30

申请号：US15288118

申请日：2016-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung Park ,  Byunghoon Na ,  Yonghwa Park

IPC: H01S5/12 ,  H01S5/02 ,  H01S5/10 ,  H01S5/125 ,  H01S5/40 ,  H01S5/026

Abstract: An edge emitting laser light source and a three-dimensional (3D) image obtaining apparatus including the edge emitting laser light source are provided. The edge emitting laser light source includes a substrate; an active layer disposed on the substrate; a wavelength selection section comprising grating regions configured to select wavelengths of light emitted from the active layer; and a gain section configured to resonate the light having the selected wavelengths in a direction parallel with the active layer.

公开(公告)号：US09841617B2

公开(公告)日：2017-12-12

申请号：US14492733

申请日：2014-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongchul Cho ,  Yongtak Lee ,  Byunghoon Na ,  Changyoung Park ,  Gunwu Ju ,  Yonghwa Park

IPC: H01L31/00 ,  H01L33/00 ,  H01L29/66 ,  H01L29/04 ,  H01L29/40 ,  G02F1/03 ,  G02F1/017 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/105 ,  H01L33/58 ,  H01L23/532 ,  H01L33/10 ,  H01L33/04 ,  H01L33/62 ,  H01L23/528 ,  G02F1/1335 ,  H01L33/46 ,  H01L33/60 ,  H01L33/42 ,  H01L33/50 ,  B82Y20/00 ,  G02F1/015

CPC classification number: G02F1/01725 ,  B82Y20/00 ,  G02F1/133605 ,  G02F2001/0157 ,  G02F2001/01733 ,  G02F2001/0175 ,  G02F2001/01766 ,  H01L23/528 ,  H01L23/53223 ,  H01L31/00 ,  H01L31/035236 ,  H01L31/075 ,  H01L31/105 ,  H01L33/04 ,  H01L33/10 ,  H01L33/42 ,  H01L33/46 ,  H01L33/502 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/05124 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/12042 ,  Y02E10/548 ,  Y10S977/755

Abstract: An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.