Abstract:
A light emitting device includes a short wavelength light emitting portion, a long wavelength light emitting portion, and a coupling layer combining the short wavelength emitting portion and the long wavelength light emitting portion. Each of the short wavelength light emitting portion and the long wavelength light emitting portion includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer of the long wavelength light emitting portion contains more Indium (In) than the active layer of the short wavelength light emitting portion, and the short wavelength light emitting portion emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting portion.
Abstract:
A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205≤X≤0.495 and 0.265≤Y≤0.450 in CIE color coordinates (X, Y).
Abstract:
A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.
Abstract:
A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.
Abstract:
A display apparatus includes a display substrate, and light emitting devices arranged on an upper surface of the display substrate. At least one of the light emitting devices includes a first LED unit including a first light emitting stack, a second LED unit including a second light emitting stack, and a third LED unit including a third light emitting stack. The second LED unit is disposed between the first LED unit and the third LED unit. Each of the first to third light emitting stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer in each of the first to third light emitting stacks are stacked in a horizontal direction with respect to the upper surface of the display substrate.
Abstract:
A light emitting module including a substrate, a plurality of light emitting devices disposed on the substrate and configured to emit light of a first wavelength, a partition structure formed between the light emitting devices, and a wavelength converter configured to convert light of the first wavelength emitted from the light emitting devices into light of another wavelength, the wavelength converter including a first layer including a light absorption layer and a first wavelength conversion portion and a second layer including a light absorption layer and a second wavelength conversion portion, in which the first wavelength conversion portion in the first layer is laterally spaced apart from the second wavelength conversion portion in the second layer in plan view.
Abstract:
A display apparatus is provided. The display apparatus includes a display substrate, a first micro LED module disposed on the display substrate, and a second micro LED module disposed on the display substrate and adjacent to the first micro LED module. The first micro LED module and the second micro LED module have side surfaces facing each other. The side surfaces facing each other of the first micro LED module and the second micro LED module are inclined in an identical direction with respect to an upper surface of the display substrate.
Abstract:
A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
Abstract:
A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.
Abstract:
A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.