SINGLE CHIP MULTI BAND LIGHT EMITTING DIODE, LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE HAVING THE SAME

    公开(公告)号:US20220262983A1

    公开(公告)日:2022-08-18

    申请号:US17673068

    申请日:2022-02-16

    Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205≤X≤0.495 and 0.265≤Y≤0.450 in CIE color coordinates (X, Y).

    LIGHT EMITTING DEVICE AND LED DISPLAY APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240194655A1

    公开(公告)日:2024-06-13

    申请号:US18587535

    申请日:2024-02-26

    CPC classification number: H01L25/0753 H01L33/38 H01L33/405 H01L33/58 H01L33/62

    Abstract: A display apparatus includes a display substrate, and light emitting devices arranged on an upper surface of the display substrate. At least one of the light emitting devices includes a first LED unit including a first light emitting stack, a second LED unit including a second light emitting stack, and a third LED unit including a third light emitting stack. The second LED unit is disposed between the first LED unit and the third LED unit. Each of the first to third light emitting stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer in each of the first to third light emitting stacks are stacked in a horizontal direction with respect to the upper surface of the display substrate.

    LIGHT EMITING MODULE AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20220406764A1

    公开(公告)日:2022-12-22

    申请号:US17743602

    申请日:2022-05-13

    Abstract: A light emitting module including a substrate, a plurality of light emitting devices disposed on the substrate and configured to emit light of a first wavelength, a partition structure formed between the light emitting devices, and a wavelength converter configured to convert light of the first wavelength emitted from the light emitting devices into light of another wavelength, the wavelength converter including a first layer including a light absorption layer and a first wavelength conversion portion and a second layer including a light absorption layer and a second wavelength conversion portion, in which the first wavelength conversion portion in the first layer is laterally spaced apart from the second wavelength conversion portion in the second layer in plan view.

    LED DISPLAY APPARATUS HAVING MICRO LED MODULE

    公开(公告)号:US20210225930A1

    公开(公告)日:2021-07-22

    申请号:US17152303

    申请日:2021-01-19

    Abstract: A display apparatus is provided. The display apparatus includes a display substrate, a first micro LED module disposed on the display substrate, and a second micro LED module disposed on the display substrate and adjacent to the first micro LED module. The first micro LED module and the second micro LED module have side surfaces facing each other. The side surfaces facing each other of the first micro LED module and the second micro LED module are inclined in an identical direction with respect to an upper surface of the display substrate.

    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE

    公开(公告)号:US20200035751A1

    公开(公告)日:2020-01-30

    申请号:US16594239

    申请日:2019-10-07

    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

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