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公开(公告)号：US08546185B2
公开(公告)日：2013-10-01
申请号：US13399482
申请日：2012-02-17
申请人： Ken Nakao , Muneo Harada , Itaru Iida , Eiji Yamaguchi
发明人： Ken Nakao , Muneo Harada , Itaru Iida , Eiji Yamaguchi
IPC分类号： H01L21/50
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/0346 , H01L2224/0401 , H01L2224/05551 , H01L2224/0557 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11002 , H01L2224/11332 , H01L2224/11505 , H01L2224/13009 , H01L2224/13076 , H01L2224/13082 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13294 , H01L2224/13339 , H01L2224/8184 , H01L2224/81986 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2224/03 , H01L2224/11 , H01L2224/05552 , H01L2924/00
摘要： Provided is a method for manufacturing a semiconductor device which includes: providing a plurality of semiconductor substrates formed with through holes which penetrate between main surfaces of the substrates and are filled with porous conductors; stacking the plurality of semiconductor substrates while aligning the porous conductors filled in the through holes; introducing conductive ink containing particle-like conductors into the porous conductors of the plurality of stacked semiconductor substrates; and sintering the plurality of stacked semiconductor substrates.
摘要翻译： 本发明提供一种半导体器件的制造方法，其特征在于，具备：多个半导体基板，形成有穿过所述基板的主面之间的通孔，并填充有多孔导体; 在对准填充在通孔中的多孔导体的同时堆叠多个半导体衬底; 将含有粒状导体的导电油墨引入到所述多个堆叠半导体衬底的多孔导体中; 并烧结多个堆叠的半导体衬底。
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公开(公告)号：US07994443B2
公开(公告)日：2011-08-09
申请号：US11886856
申请日：2006-03-20
申请人： Masato Hayashi , Masami Yakabe , Tetsuya Hasebe , Muneo Harada , Katsuya Okumura
发明人： Masato Hayashi , Masami Yakabe , Tetsuya Hasebe , Muneo Harada , Katsuya Okumura
CPC分类号： H01H1/0036 , B81B3/0054 , B81B2201/014 , B81B2203/053 , H01H1/24 , H01H37/46 , H01H67/22 , H01H2001/0042 , H01H2037/008
摘要： A first wiring layer 16 is disposed on an insulating film 14 on the lower surface of an upper substrate 15, while a second wiring layer 13three-dimensionally crossing the first wiring layer 16 is provided on the insulating film 12 on a lower substrate 11. A cantilever 17 has one end connected to the first wiring layer 16 and the other end opposed to the second wiring layer 13 with a space therebetween. A thermoplastic sheet 19 is arranged on the upper substrate 15 so as to cover the through-hole 18. The thermoplastic sheet 19 is pressed by a heated pin 20 against the cantilever 17 and deformed so as to maintain the connection between the cantilever 17and the second wiring layer 13, and therefore close the switch 10.
摘要翻译： 第一布线层16设置在上基板15的下表面上的绝缘膜14上，而在下基板11上的绝缘膜12上设置与第一布线层16三维交叉的第二布线层13。 悬臂17的一端与第一配线层16连接，另一端与第二配线层13相对置，而其间具有间隔。 热塑片19布置在上基板15上以覆盖通孔18.热塑片19被加热的销20压靠在悬臂17上并变形，从而保持悬臂17和第二个之间的连接 布线层13，因此闭合开关10。
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公开(公告)号：US07742277B2
公开(公告)日：2010-06-22
申请号：US11508204
申请日：2006-08-23
申请人： Tomotaka Shinoda , Kinji Yamada , Takahiro Kitano , Yoshiki Yamanishi , Muneo Harada , Tatsuzo Kawaguchi , Yoshihiro Hirota , Katsuya Okumura , Shuichi Kawano
发明人： Tomotaka Shinoda , Kinji Yamada , Takahiro Kitano , Yoshiki Yamanishi , Muneo Harada , Tatsuzo Kawaguchi , Yoshihiro Hirota , Katsuya Okumura , Shuichi Kawano
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/55 , Y10T29/435
摘要： A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.
摘要翻译： 电介质膜电容器包括具有开口并由包括铂的材料形成的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜和设置在电介质膜上的上电极。 下部电极的平面面积为电介质膜的形成区域的面积的50％以上。 电介质膜电容器包括由包括铂的材料形成的厚度为10至100nm的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜，以及设置在电介质上的上电极 电影。
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公开(公告)号：US20100032357A1
公开(公告)日：2010-02-11
申请号：US12377274
申请日：2007-08-14
CPC分类号： G01N30/6095 , G01N30/52 , G01N2030/525
摘要： A high separation efficiency column 10 for chromatography and a manufacturing method thereof are provided. The column 10 for chromatography includes a first substrate 11 having a plurality of pillars 22 formed on one surface thereof and a second substrate 12 bonded to the one surface of the first substrate 11 and constituting a flow path 13 together with the plurality of pillars 22 formed on the first substrate. At least a surface of each pillar is formed in a porous shape.
摘要翻译： 提供了用于色谱法的高分离效率柱10及其制造方法。 用于层析的柱10包括：第一基板11，其具有在其一个表面上形成的多个柱22;以及第二基板12，其与第一基板11的一个表面接合，并与形成的多个柱22一起构成流路13 在第一基板上。 每个柱的至少一个表面形成为多孔形状。
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15.发明申请Pattern forming apparatus and method of manufacturing pattern forming apparatus 审中-公开图案形成装置和图案形成装置的制造方法公开(公告)号：US20060255182A1
公开(公告)日：2006-11-16
申请号：US11411983
申请日：2006-04-27
CPC分类号： B41J2/1609 , B05C5/007 , B05C5/0212 , B05C5/027 , B41J2/1628 , B41J2/1631 , H01J9/242
摘要： Using a silicon single crystal with (100) plane orientation as a base material, a pectinate portion having a slope portion and a patterning material guiding groove is formed through photolithography process. A liquid reservoir for keeping a patterning material common to tooth portions of the pectinate portion is formed in the same step as a step for forming the guiding grooves. In forming slope portion, anisotropic wet etching allows easy and accurate formation of a slope portion with (111) plane orientation to (100) plane orientation, by taking advantage of differences in speed due to the plane orientations. In addition, by forming a groove portion using anisotropic dry etching, the patterning material guiding groove having a perpendicular sidewall reaching the slope portion may be formed at high accuracy. A pattern forming apparatus with high accuracy and low cost is provided.
摘要翻译： 使用具有（100）面取向的硅单晶作为基材，通过光刻工艺形成具有倾斜部分和图案形成材料引导槽的果胶部分。 在与用于形成导向槽的步骤相同的步骤中形成用于保持图形材料的共同于图形部分的牙齿部分的图案材料的液体储存器。 在形成斜坡部分时，通过利用由于平面取向的速度差异，各向异性湿蚀刻允许容易且准确地形成具有（111）面取向到（100）面取向的斜面部分。 此外，通过使用各向异性干蚀刻形成槽部，可以高精度地形成具有到达斜面部的垂直侧壁的图案形成材料导向槽。 提供了一种高精度，低成本的图案形成装置。
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公开(公告)号：US06331780B1
公开(公告)日：2001-12-18
申请号：US09381780
申请日：1999-09-23
IPC分类号： G01R2726
CPC分类号： G01R27/2605
摘要： A static capacitance-to-voltage converter is capable of converting a static capacitance into a voltage without suffering from a stray capacitance formed between a signal and a shielding line or a stray capacitance formed between an exposed portion of the signal line and its surroundings. The static capacitance-to-voltage converter is formed of an operational amplifier placed in an imaginary short-circuit state between an inverting input and a non-inverting input thereof; a signal line having one end connected to the inverting input and the other end capable of being connected to a static capacitance; a shielding line surrounding the signal line and connected to the non-inverting input; an alternating current signal generator for applying the non-inverting input with an alternating current signal; and zero adjusters for adjusting the output of the static capacitance-to-voltage converter to minimum when no static capacitance is connected to the signal line.
摘要翻译： 静态电容 - 电压转换器能够将静态电容转换成电压，而不会在信号线与屏蔽线之间形成的寄生电容或信号线的暴露部分与其周围环境之间形成的杂散电容。 静态电容 - 电压转换器由在反相输入端和非反相输入端之间以假想短路状态放置的运算放大器形成; 信号线，其一端连接到反相输入，另一端能够连接到静态电容; 围绕信号线并连接到非反相输入的屏蔽线; 交流信号发生器，用于以交流信号施加所述非反相输入; 以及用于在静态电容连接到信号线时将静态电容 - 电压转换器的输出调整到最小的零点调整器。
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公开(公告)号：US20110039420A1
公开(公告)日：2011-02-17
申请号：US12934165
申请日：2009-03-16
申请人： Ken Nakao , Muneo Harada
发明人： Ken Nakao , Muneo Harada
CPC分类号： C23C14/12 , B05D1/60 , B05D3/0473 , B05D3/0493 , C23C14/243 , H01L21/02126 , H01L21/02312 , H01L21/312
摘要： A wall surface of a film forming container is heated to or above a vaporization temperature of a material monomer, which is used to form an organic film, by using an external heater formed along the wall surface of the film forming container, substrates are heated to a thermal polymerization reaction temperature by using an internal heater that is disposed apart from the external heater and near a substrate-supporting container in which the substrates are received, and the organic film is formed through thermal polymerization occurring on the substrates by supplying the material monomer into the film forming container.
摘要翻译： 通过使用沿着成膜容器的壁面形成的外部加热器将成膜容器的壁面加热至或高于用于形成有机膜的材料单体的蒸发温度，将基板加热至 通过使用与外部加热器隔离的内部加热器和接收基板的基板支撑容器附近的内部加热器，形成热聚合反应温度，并且通过在基板上进行热聚合而形成有机膜，所述热聚合通过供给材料单体 进入成膜容器。
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公开(公告)号：US20090314065A1
公开(公告)日：2009-12-24
申请号：US12441608
申请日：2008-05-08
申请人： Tomofumi Kiyomoto , Muneo Harada , Katsuyuki Ono
发明人： Tomofumi Kiyomoto , Muneo Harada , Katsuyuki Ono
CPC分类号： G01N30/6095 , G01N30/6004
摘要： A chromatography detector 11 includes a base substrate having a main surface 12a and a column flow path 15 formed on the main surface 12a, and a substrate block 13 and 14, which has a detection space 18 communicating with an outlet of the column flow path 15 and is stacked on the main surface 12a of the base substrate 12 so as to close a top surface of the column flow path 15.
摘要翻译： 色谱检测器11包括具有形成在主表面12a上的主表面12a和柱流路15的基底基板和具有与柱流路15的出口连通的检测空间18的基板块13和14 并且堆叠在基底基板12的主表面12a上，以封闭柱流路15的顶面。
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19.发明授权公开(公告)号：US07619424B2
公开(公告)日：2009-11-17
申请号：US11661349
申请日：2005-08-29
CPC分类号： G01R1/06716 , G01R1/06727 , Y10T29/49002
摘要： A method for manufacturing a probe needle having beams and a contactor placed on tips of the beams comprises preparing a Si wafer 20, forming a seed layer 21 on the Si wafer 20, and forming grooves in a desired shape of the beams on the seed layer 21 by patterning a photoresist 23. Subsequently, the grooves are filled up with metal-plated layers 24a, 24b to form the desired shape of beams.
摘要翻译： 用于制造具有光束的探针的方法和放置在光束的尖端上的接触器包括准备Si晶片20，在Si晶片20上形成晶种层21，并且在晶种层上形成期望形状的光束的凹槽 接着，用金属镀层24a，24b填充凹槽以形成所需的光束形状。
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公开(公告)号：US20070181556A1
公开(公告)日：2007-08-09
申请号：US11508156
申请日：2006-08-23
申请人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kenji Matsuda , Kinji Yamada , Tomotaka Shinoda , Daohai Wang , Katsuya Okumura
发明人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kenji Matsuda , Kinji Yamada , Tomotaka Shinoda , Daohai Wang , Katsuya Okumura
IPC分类号： F27B5/14
CPC分类号： H01L28/55
摘要： Atmosphere in processing apparatus is adjusted to, for example, oxygen atmosphere, by gas supply source and the like. Interior of thermal processing apparatus is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus and then to room temperature in processing apparatus, and carried out from processing apparatus. Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.
摘要翻译： 处理装置中的气氛通过气体供给源等调节为例如氧气氛。 热处理装置的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟以晶片W中没有产生缺陷的速度装载到热处理装置中。之后，热处理装置的反应管的内部温度升高到烘烤温度，进行烘烤 预定时间 将晶片W在热处理装置中冷却至规定温度，然后在处理装置中冷却至室温，并从处理装置进行。 在电介质前体层被烘烤之前，在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残留溶剂的温度的温度下将其保持预定时间。
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