公开(公告)号：US07875894B2

公开(公告)日：2011-01-25

申请号：US11543196

申请日：2006-10-05

申请人： Tadashi Yamaguchi

发明人： Tadashi Yamaguchi

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L2223/5448 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05557 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： A semiconductor device includes a semiconductor chip having electrode pads, and a rewiring pattern having interconnects which are connected to the electrode pads and extend over an insulation film. The semiconductor device also includes columnar electrodes each of which has a main body section and a protrusion section, and a sealing section which has a top face having a height the same as the top faces of the protrusion sections. The semiconductor device also includes solder balls formed on the protrusion sections. The semiconductor device also has trenches in the sealing section. Each trench has a depth which reaches the boundary between the main body and protrusion of the electrode. The side faces of the protrusion section are exposed face defined by the trenches. Each solder ball is electrically connected to the top face and side faces of the protrusion section of each electrode.

摘要翻译： 半导体器件包括具有电极焊盘的半导体芯片和具有连接到电极焊盘并且在绝缘膜上延伸的互连的重新布线图案。 半导体器件还包括柱状电极，每个柱状电极具有主体部分和突出部分，以及具有与突起部分的顶面相同高度的顶面的密封部分。 半导体器件还包括形成在突出部分上的焊球。 半导体器件还在密封部分中具有沟槽。 每个沟槽的深度达到主体和电极突起之间的边界。 突出部分的侧面是由沟槽限定的露出面。 每个焊球与每个电极的突出部分的顶面和侧面电连接。

公开(公告)号：US07708051B2

公开(公告)日：2010-05-04

申请号：US11657162

申请日：2007-01-24

申请人： Tetsuya Katsumi ,  Hitoshi Ofune ,  Tadashi Yamaguchi ,  Hiroshi Nagasaka ,  Naoki Yoshida

发明人： Tetsuya Katsumi ,  Hitoshi Ofune ,  Tadashi Yamaguchi ,  Hiroshi Nagasaka ,  Naoki Yoshida

IPC分类号： B22D17/00 ,  B22D33/04

CPC分类号： G01L9/0051 ,  B22D15/02

摘要： A physical quantity detector, such as a pressure sensor and a load sensor, includes a cylindrical part of which one end is closed with a strain generating part and a sensor part formed on the strain generating part. The cylindrical part is produced by melting an alloying material having a composition capable of yielding an amorphous alloy, injecting the resultant molten alloy into a metal mold, and cooling the molten alloy in the metal mold to confer amorphousness on the alloy. The metal mold includes a split mold having at least two split parts for forming a cavity and an insert pin to be inserted into the cavity so as to define the inner configuration of the cylindrical part, or further an insert core to be inserted into the mold so as to form the surface of the cavity corresponding to the surface of the strain generating part.

摘要翻译： 诸如压力传感器和负载传感器的物理量检测器包括其一端被应变产生部分封闭的圆柱形部分和形成在应变发生部分上的传感器部分。 通过熔化具有能够产生非晶合金的组成的合金材料，将所得熔融合金注入金属模具中，并且冷却金属模具中的熔融合金以赋予合金非晶性，从而制造圆柱形部分。 金属模具包括具有用于形成空腔的至少两个分开部分和插入空腔中的插入销以便限定圆柱形部件的内部构造的分开模具，或者还包括插入模具中的插入芯部 从而形成与应变发生部的表面对应的空腔的表面。

公开(公告)号：US20070272151A1

公开(公告)日：2007-11-29

申请号：US11659878

申请日：2005-08-10

申请人： Hiroyuki Suzuki ,  Shinichi Okita ,  Tadashi Yamaguchi

发明人： Hiroyuki Suzuki ,  Shinichi Okita ,  Tadashi Yamaguchi

IPC分类号： H01L21/02 ,  H04L9/00

CPC分类号： G06Q30/06 ,  G03F7/70425 ,  G03F7/70508 ,  G06F21/71 ,  G06F2221/2105 ,  G06F2221/2113 ,  G06F2221/2137 ,  G06F2221/2149 ,  G06Q10/10 ,  G06Q2220/18 ,  H01L21/67253 ,  H01L21/67294

摘要： [PROBLEM] To enable confirmation of whether a substrate processing system is being illicitly used and preventing that use when there is the fact of illicit use. [MEANS FOR SOLUTION] A license file LF is a file encrypting license information L including usage terms of a substrate processing system for a specific user. A match confirmation program P2 confirms the match between the content of the license file LF decrypted by a decryption program P1 and device information DI, network information NI, and current time CT obtained from the substrate processing system to confirm the existence of the fact of illicit use. If there is illicit use, the control program P3 stops operation of the substrate processing system until predetermined action is taken based on the information from the match confirmation program P2.

摘要翻译： [问题]为了确认基板处理系统是否被非法使用，并且在存在非法使用的情况下防止使用。 [解决方案]许可证文件LF是包括用于特定用户的基板处理系统的使用条件的文件加密许可证信息L. 匹配确认程序P 2确认由解密程序P 1解密的许可证文件LF的内容与从基板处理系统获得的设备信息DI，网络信息NI和当前时间CT之间的匹配，以确认事实的存在 的非法使用。 如果存在非法使用，则控制程序P 3基于来自匹配确认程序P 2的信息停止基板处理系统的操作，直到采取预定的动作为止。

公开(公告)号：US20070181222A1

公开(公告)日：2007-08-09

申请号：US11657162

申请日：2007-01-24

申请人： Tetsuya Katsumi ,  Hitoshi Ofune ,  Tadashi Yamaguchi ,  Hiroshi Nagasaka ,  Naoki Yoshida

发明人： Tetsuya Katsumi ,  Hitoshi Ofune ,  Tadashi Yamaguchi ,  Hiroshi Nagasaka ,  Naoki Yoshida

IPC分类号： C23C22/70 ,  B32B15/01

CPC分类号： G01L9/0051 ,  B22D15/02

摘要： In the manufacture of a physical quantity detector, such as a pressure sensor and a load sensor, comprising a cylindrical part of which one end is closed with a strain generating part and a sensor part formed on the strain generating part, the cylindrical part mentioned above is produced by melting an alloying material having a composition capable of yielding an amorphous alloy, injecting the resultant molten alloy into a metal mold, and cooling the molten alloy in the metal mold to confer amorphousness on the alloy. The metal mold is composed of a split mold having at least two split parts for forming a cavity and an insert pin to be inserted into the cavity so as to define the inner configuration of the cylindrical part, or further an insert core to be inserted into the mold so as to form the surface of the cavity corresponding to the surface of the strain generating part. In another embodiment, the cavity is formed so that the parting face of the mold corresponds to the surface of the strain generating part.

摘要翻译： 在物理量检测器的制造中，例如压力传感器和负载传感器，包括其一端被应变产生部分封闭的圆柱形部分和形成在应变发生部分上的传感器部分，上述圆柱形部分 通过熔化具有能够产生非晶合金的组成的合金材料制成，将所得熔融合金注入金属模具中，并且冷却金属模具中的熔融合金以赋予合金非晶质。 金属模具由具有至少两个用于形成空腔的分开部分和插入空腔中的插入销的分开模具组成，以限定圆柱形部件的内部构造，或者还有插入芯部 以形成对应于应变发生部的表面的空腔的表面。 在另一个实施例中，形成空腔，使得模具的分型面对应于应变发生部件的表面。

公开(公告)号：US07247522B2

公开(公告)日：2007-07-24

申请号：US11018250

申请日：2004-12-22

申请人： Tadashi Yamaguchi

发明人： Tadashi Yamaguchi

IPC分类号： H01L23/48

CPC分类号： H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/5442 ,  H01L2223/54473 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In order to provide a semiconductor device which makes it possible to mount a semiconductor element on the substrate of the semiconductor device main body at the correct position with a higher degree of accuracy, a semiconductor element 2 is mounted at a circuit forming surface of a semiconductor substrate 1 at the periphery of which pad electrodes 5 are provided and a specific area in the semiconductor device containing the semiconductor element 2 is sealed with resin. At the circuit forming surface of the semiconductor substrate 1, reference lines 3 are formed in correspondence to the positions of at least three corners of the semiconductor element 2 to be mounted.

摘要翻译： 为了提供一种能够以更高的精度将半导体元件安装在半导体器件主体的基板上的正确位置的半导体器件，半导体元件2安装在半导体的电路形成表面 在其周边设置有衬垫电极5的衬底1，并且用树脂密封包含半导体元件2的半导体器件中的比表面积。 在半导体衬底1的电路形成表面上，对应于要安装的半导体元件2的至少三个角的位置形成参考线3。

公开(公告)号：US20070138573A1

公开(公告)日：2007-06-21

申请号：US11565913

申请日：2006-12-01

申请人： Keiichiro KASHIHARA ,  Tomonori Okudaira ,  Tadashi Yamaguchi ,  Atsushi Ishinaga ,  Kenshi Kanegae ,  Akihiko Tsuzumitani

发明人： Keiichiro KASHIHARA ,  Tomonori Okudaira ,  Tadashi Yamaguchi ,  Atsushi Ishinaga ,  Kenshi Kanegae ,  Akihiko Tsuzumitani

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device according to the present invention comprises a silicon substrate, a gate electrode formed on a main surface of the silicon substrate with a gate insulation film therethrough, a sidewall spacer formed so as to cover a side surface of the gate electrode and including at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon, a source region and a drain region formed in the main surface of the silicon substrate so as to sandwich the gate electrode, a protection film formed so as to cover an end surface of the silicon oxide film without extending below said silicon nitride film, the end surface being on a side of said source region and said drain region, and a metal silicide layer formed in the source region and the drain region on a side of said protection film away from said gate electrode.

摘要翻译： 根据本发明的半导体器件包括硅衬底，在硅衬底的主表面上形成有栅绝缘膜的栅电极，形成为覆盖栅电极的侧表面的侧壁间隔件， 至少两层作为最下层的氧化硅膜和形成在其上的氮化硅膜，在硅衬底的主表面中形成的源极区和漏极区，以便夹着栅电极，保护膜形成为 为了覆盖氧化硅膜的端面而不延伸到所述氮化硅膜的下方，所述端面位于所述源极区域和所述漏极区域的一侧，以及形成在所述源极区域和所述漏极区域中的金属硅化物层 所述保护膜的一侧远离所述栅电极。

公开(公告)号：US06646325B2

公开(公告)日：2003-11-11

申请号：US10057909

申请日：2002-01-29

申请人： Tadashi Yamaguchi

发明人： Tadashi Yamaguchi

IPC分类号： H01L2906

CPC分类号： G01N33/573 ,  H01L23/3114 ,  H01L23/544 ,  H01L29/0657 ,  H01L2221/6834 ,  H01L2223/5442 ,  H01L2223/54473 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/10155 ,  H01L2924/10158 ,  H05K3/303 ,  H05K2201/09036 ,  H05K2201/10568 ,  H05K2201/10734 ,  H05K2203/168 ,  Y02P70/613

摘要： A semiconductor device includes a semiconductor substrate having a first main surface having circuit elements formed thereon, a second main surface substantially opposite to the first main surface, and a plurality of side faces provided between the first main surface and the second main surface. The semiconductor device also includes a plurality of external terminals formed over the first main surface and respectively electrically connected to the circuit elements. The second main surface has a first steplike section which extends from a first side face of the plurality of side faces to a second side face opposite to the first side face.

摘要翻译： 半导体器件包括具有形成在其上的电路元件的第一主表面，与第一主表面基本相对的第二主表面和设置在第一主表面和第二主表面之间的多个侧面的半导体衬底。 半导体器件还包括形成在第一主表面上并分别电连接到电路元件的多个外部端子。 第二主表面具有从多个侧面的第一侧面延伸到与第一侧面相对的第二侧面的第一台阶状部。

公开(公告)号：US06198160B1

公开(公告)日：2001-03-06

申请号：US08955817

申请日：1997-10-22

申请人： Tadashi Yamaguchi

发明人： Tadashi Yamaguchi

IPC分类号： H01L23495

CPC分类号： H01L24/06 ,  H01L23/4951 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A semiconductor device of surface-mount type includes a circuit strip tailored to have patterns projected, a semiconductor element fixedly joined to the circuit strip, and pads on the semiconductor element electrically connected by wires to the corresponding patterns on the circuit strip and sealed with a resin material. While the surface-mount type semiconductor device is adapted to be simple in structure and capable of high-density mounting, an appliance on which the semiconductor device is mounted and a method of producing the semiconductor device are also provided.

摘要翻译： 表面安装型的半导体器件包括被定制成具有图案投射的电路板，固定地连接到电路板的半导体元件以及通过导线电连接到电路板上的相应图案的半导体元件上的焊盘，并用 树脂材料。 虽然表面安装型半导体器件的结构简单且能够高密度地安装，但也提供了安装有半导体器件的器具以及半导体器件的制造方法。

公开(公告)号：US5753322A

公开(公告)日：1998-05-19

申请号：US634985

申请日：1996-04-19

申请人： Tadashi Yamaguchi ,  Hideo Fukui ,  Masayuki Kobayashi ,  Nobuyuki Nakada ,  Toshio Arai

发明人： Tadashi Yamaguchi ,  Hideo Fukui ,  Masayuki Kobayashi ,  Nobuyuki Nakada ,  Toshio Arai

IPC分类号： C09D5/14 ,  C23C28/00 ,  C23C28/04 ,  A47G1/12

CPC分类号： B01J35/004 ,  B01J23/42 ,  B01J23/50 ,  B01J23/72 ,  B01J37/0219 ,  B01J37/0226 ,  B01J37/0244 ,  C09D5/14 ,  C23C28/00 ,  C23C28/04 ,  B01J21/063 ,  Y10S428/901 ,  Y10S428/907 ,  Y10T428/31678

摘要： Disclosed is an aluminum building material which comprises a substrate made of aluminum or an aluminum alloy, an anodic oxide film formed on the surface of the substrate, and a thin film containing a photocatalytically active semiconductor and deposited on the anodic oxide film. The film containing the photocatalytically active semiconductor embraces both a film formed solely of the semiconductor mentioned above and a film having fine particles of the semiconductor incorporated in or deposited on a suitable carrier such as, for example, a coating film. A fixture unit is also provided which comprises a frame member made of the aluminum building material mentioned above, a panel member having the surface thereof coated with a film containing a photocatalytically active semiconductor, and a watertight and airtight member containing fine particles of a photocatalytically active semiconductor.

摘要翻译： 公开了一种铝建筑材料，其包括由铝或铝合金制成的基板，形成在基板的表面上的阳极氧化膜，以及含有光催化活性半导体并沉积在阳极氧化膜上的薄膜。 含有光催化活性半导体的膜既包括仅由上述半导体形成的膜，也包含掺入或沉积在合适载体（例如涂膜）上的半导体微粒的膜。 还提供了一种夹具单元，其包括由上述铝建筑材料制成的框架构件，其表面涂覆有含有光催化活性半导体的膜的面板构件和包含光催化活性的细颗粒的水密气密构件 半导体。

公开(公告)号：US5463188A

公开(公告)日：1995-10-31

申请号：US251044

申请日：1994-05-31

申请人： Yasuhiro Nohmi ,  Tadashi Yamaguchi ,  Kimio Matsuzawa ,  Naoki Katagiri ,  Hotaka Sakaguchi

发明人： Yasuhiro Nohmi ,  Tadashi Yamaguchi ,  Kimio Matsuzawa ,  Naoki Katagiri ,  Hotaka Sakaguchi

IPC分类号： H01B11/18 ,  H01B7/34

CPC分类号： H01B11/1821

摘要： The coaxial cable of the present invention is an insulating layer, an outer conducting layer and a protective film layer formed in that order around a center conductor, the outer conducting layer being formed from a primary transverse winding and a secondary transverse winding, each of a plurality of thin metal wires, the winding directions of the transverse windings being opposite each other. The winding angle of the primary and secondary transverse windings with respect to the center conductor is 30.degree..+-.5.degree. and the winding pitches of the primary and secondary transverse windings are from 0.8 to 2.0 times the bending radius of the coaxial cable.

摘要翻译： 本发明的同轴电缆是围绕中心导体依次形成的绝缘层，外部导电层和保护膜层，外部导电层由初级横向绕组和次级横向绕组形成， 多个细金属丝，横向绕组的卷绕方向彼此相对。 初级和次级横向绕组相对于中心导体的绕组角度为30°+/- 5°，初级和次级横向绕组的绕组间距为同轴电缆弯曲半径的0.8至2.0倍。