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    EDGE-DOMINANT ALIGNMENT METHOD IN EXPOSURE SCANNER SYSTEM
    11.
    发明申请
    EDGE-DOMINANT ALIGNMENT METHOD IN EXPOSURE SCANNER SYSTEM 有权
    接触扫描仪系统中的边缘对准方法

    公开(公告)号：US20150116686A1

    公开(公告)日：2015-04-30

    申请号：US14066949

    申请日：2013-10-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yung-Yao LEE ,  Ying-Ying WANG ,  Yi-Ping HSIEH ,  Heng-Hsin LIU

    IPC: G03F9/00

    CPC classification number: G03F9/7084 ,  G03F9/70 ,  G03F9/7007 ,  G03F9/7046 ,  G03F9/7088 ,  G03F2009/005

    Abstract: An edge-dominant alignment method for use in an exposure scanner system is provided. The method includes the steps of: providing a wafer having a plurality of shot areas, wherein each shot area has a plurality of alignment marks; determining a first outer zone of the wafer, wherein the first outer zone includes a first portion of the shot areas along a first outer edge of the wafer; determining a scan path according to the shot areas of the first outer zone; and performing an aligning process to each shot area of the first outer zone according to the scan path and an alignment mark of each shot area of the first outer zone.

    Abstract translation: 提供了一种用于曝光扫描仪系统的边缘优势对准方法。 该方法包括以下步骤：提供具有多个拍摄区域的晶片，其中每个拍摄区域具有多个对准标记; 确定所述晶片的第一外部区域，其中所述第一外部区域沿所述晶片的第一外部边缘包括所述引射区域的第一部分; 根据所述第一外部区域的拍摄区域确定扫描路径; 以及根据所述扫描路径和所述第一外部区域的每个拍摄区域的对准标记，对所述第一外部区域的每个拍摄区域进行对准处理。

    LITHOGRAPHY CONTAMINATION CONTROL
    12.
    发明公开
    LITHOGRAPHY CONTAMINATION CONTROL 审中-公开

    公开(公告)号：US20240361708A1

    公开(公告)日：2024-10-31

    申请号：US18766165

    申请日：2024-07-08

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chieh HSIEH ,  Tai-Yu CHEN ,  Cho-Ying LIN ,  Heng-Hsin LIU ,  Li-Jui CHEN ,  Shang-Chieh CHIEN

    IPC: G03F7/00 ,  G02B17/06 ,  H05G2/00

    CPC classification number: G03F7/70925 ,  G02B17/0663 ,  G03F7/70033 ,  G03F7/70491 ,  G03F7/70808 ,  G03F7/70916 ,  H05G2/008

    Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

    EXPOSURE METHOD AND EXPOSURE APPARATUS
    19.
    发明申请
    EXPOSURE METHOD AND EXPOSURE APPARATUS 审中-公开

    公开(公告)号：US20190146351A1

    公开(公告)日：2019-05-16

    申请号：US15906580

    申请日：2018-02-27

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yung-Yao LEE ,  Heng-Hsin LIU ,  Hung-Ming KUO ,  Jui-Chun PENG

    IPC: G03F7/20 ,  H01L21/027 ,  H01L21/66 ,  H01L21/67

    Abstract: In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.

    OVERLAY METROLOGY METHOD AND OVERLAY CONTROL METHOD AND SYSTEM
    20.
    发明申请
    OVERLAY METROLOGY METHOD AND OVERLAY CONTROL METHOD AND SYSTEM 有权
    重叠方程和叠加控制方法与系统

    公开(公告)号：US20160025650A1

    公开(公告)日：2016-01-28

    申请号：US14338041

    申请日：2014-07-22

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yung-Yao LEE ,  Ying-Ying WANG ,  Shang-Wern CHANG ,  Heng-Hsin LIU

    IPC: G01N21/95 ,  G06T7/00 ,  G01N21/88

    CPC classification number: G06T7/001 ,  G01N21/8851 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/8887 ,  G06T2207/30148

    Abstract: The present disclosure provides an overlay metrology method, an overlay control method and an overlay control system. The overlay metrology method includes capturing a current layer image of a current overlay mark on a current layer with a current focal length and capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length. Then, the overlay metrology method further includes combining the current layer image with the previous layer image to form an overlay mark image and determining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image.

    Abstract translation: 本公开提供了覆盖计量方法，覆盖控制方法和覆盖控制系统。 覆盖度量方法包括以当前焦距捕获当前层上的当前覆盖标记的当前层图像，并且以先前焦距捕获先前层上的先前叠加标记的先前层图像。 然后，覆盖度量方法还包括将当前层图像与先前层图像组合以形成覆盖标记图像，并且基于重叠标记图像确定当前叠加标记与先前叠加标记之间的重叠误差。

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