公开(公告)号：US07727863B1

公开(公告)日：2010-06-01

申请号：US12286243

申请日：2008-09-29

申请人： Bryan L. Buckalew ,  Jonathan D. Reid ,  Johanes H. Sukamto ,  Frederick Dean Wilmot ,  Richard S. Hill

发明人： Bryan L. Buckalew ,  Jonathan D. Reid ,  Johanes H. Sukamto ,  Frederick Dean Wilmot ,  Richard S. Hill

IPC分类号： H01L21/322

CPC分类号： C25D7/123 ,  C23C18/1666 ,  C25D5/20 ,  C25D21/04 ,  H01L21/288 ,  H01L21/2885

摘要： Sonic radiation is applied to a wafer portion of the planar surface of a rotating, tilted wafer as it is being immersed into a liquid treatment bath. The portion includes the leading outer edge region of the wafer. The area of the wafer portion is significantly less than the total surface area of the planar wafer surface. Power density is minimized. As a result, bubbles are removed from the wafer surface and cavitation in the liquid bath is avoided. In some embodiments, the liquid bath is de-gassed to inhibit bubble formation.

摘要翻译： 当旋转倾斜的晶片被浸入液体处理槽中时，将声波辐射施加到旋转的倾斜晶片的平面表面的晶片部分。 该部分包括晶片的引导外缘区域。 晶片部分的面积显着小于平面晶片表面的总表面积。 功率密度最小化。 结果，从晶片表面去除了气泡，并避免了液槽中的气蚀。 在一些实施方案中，液体浴被去气以抑制气泡形成。

公开(公告)号：US09028666B2

公开(公告)日：2015-05-12

申请号：US13460423

申请日：2012-04-30

申请人： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

发明人： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC分类号： C25D5/00 ,  C25D17/00 ,  C25D7/12 ,  H01L21/288

CPC分类号： C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

摘要： Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

摘要翻译： 本文描述的方法将晶片进入电解质，使得由于晶片和/或晶片保持器与电解质的初始冲击而引起的空气滞留减少，并且晶片以这样的方式移动，使得在浸渍期间保持电解质润湿波前 该晶片还使空气截留最小化。

公开(公告)号：US06884335B2

公开(公告)日：2005-04-26

申请号：US10441607

申请日：2003-05-20

申请人： Eric G. Webb ,  Jonathan D. Reid ,  John H. Sukamto ,  Sesha Varadarajan ,  Margolita M. Pollack ,  Bryan L. Buckalew ,  Tariq Majid

发明人： Eric G. Webb ,  Jonathan D. Reid ,  John H. Sukamto ,  Sesha Varadarajan ,  Margolita M. Pollack ,  Bryan L. Buckalew ,  Tariq Majid

IPC分类号： C25D5/04 ,  C25D5/18 ,  C25D7/12 ,  H01L21/288

CPC分类号： C25D5/04 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  Y10S428/935 ,  Y10T428/12993

摘要： A negative bias is applied to an integrated circuit wafer immersed in an electrolytic plating solution to generate a DC current. After about ten percent to sixty percent of the final layer thickness has formed in a first plating time, biasing is interrupted during short pauses during a second plating time to generate substantially zero DC current. The pauses are from about 2 milliseconds to 5 seconds long, and typically about 10 milliseconds to 500 milliseconds. Generally, about 2 pauses to 100 pauses are used, and typically about 3 pauses to 15 pauses. Generally, the DC current density during the second plating time is greater than the DC current density during the initial plating time. Typically, the integrated circuit wafer is rotated during electroplating. Preferably, the wafer is rotated at a slower rotation rate during the second plating time than during the first plating time.

摘要翻译： 将负偏压施加到浸在电解电镀溶液中的集成电路晶片以产生DC电流。 在第一电镀时间中已经形成最终层厚度的约百分之十到百分之六十之后，在第二电镀时间期间的短暂停期间偏压中断，以产生基本为零的DC电流。 停顿时间为大约2毫秒到5秒，通常为大约10毫秒到500毫秒。 通常，使用约2次暂停至100次暂停，通常约3次暂停至15次停顿。 通常，第二电镀时间期间的直流电流密度大于初始电镀时间期间的直流电流密度。 通常，电镀期间集成电路晶片旋转。 优选地，在第二电镀时间期间，晶片以比第一电镀时间期间更慢的旋转速度旋转。

公开(公告)号：US09138784B1

公开(公告)日：2015-09-22

申请号：US12961274

申请日：2010-12-06

申请人： Jeffrey Alan Hawkins ,  Charles Lorenzo Merrill ,  Jason Daniel Marchetti ,  Kousik Ganesan ,  Bryan L. Buckalew

发明人： Jeffrey Alan Hawkins ,  Charles Lorenzo Merrill ,  Jason Daniel Marchetti ,  Kousik Ganesan ,  Bryan L. Buckalew

IPC分类号： B08B3/00 ,  B08B3/10 ,  B01D19/00

CPC分类号： B08B3/10 ,  B01D19/00 ,  H01L21/67017 ,  H01L21/67051

摘要： An apparatus for conditioning deionized water and delivering it to a semiconductor wafer in a post electrofill module includes a degassing station configured to remove dissolved gas from the deionized water flow, a heating station configured to heat the deionized water flow, and a nozzle configured to deliver the deionized water flow to the wafer. The heating and degassing are performed before the delivery of the deionized water flow to the wafer. In some implementations the degassing station includes a contact degasser or an inert gas bubbler, and the heating station is configured to heating the deionized water flow to a temperature of between about 35-40° C. In some embodiments the deionized water flow is passed through the degassing station before being passed through the heating station.

摘要翻译： 一种用于调节去离子水并将其输送到后电解电池模块中的半导体晶片的设备包括：脱气站，其被配置为从去离子水流中除去溶解的气体;加热站，被配置为加热去离子水流;以及喷嘴， 去离子水流向晶片。 在将去离子水流输送到晶片之前进行加热和脱气。 在一些实施方案中，脱气站包括接触脱气器或惰性气体起泡器，并且加热站配置为将去离子水流加热到约35-40℃之间的温度。在一些实施方案中，去离子水流通过 脱气站通过加热站。

公开(公告)号：US20100317198A1

公开(公告)日：2010-12-16

申请号：US12533960

申请日：2009-07-31

申请人： George Andrew Antonelli ,  Jennifer O' Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

发明人： George Andrew Antonelli ,  Jennifer O' Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

IPC分类号： H01L21/465 ,  C23C16/50

CPC分类号： H01L21/02074 ,  C23C16/0245 ,  C23C16/54 ,  H01L21/0206 ,  H01L21/28185 ,  H01L21/3105 ,  H01L21/67201 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76886 ,  H01L28/60

摘要： Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, and a remote plasma source configured to provide a remote plasma to the load lock.

摘要翻译： 本文公开了通过远程等离子体处理在半导体晶片制造工艺中清洁界面的实施例。 例如，在一个所公开的实施例中，半导体处理装置包括处理室，经由传送端口耦合到处理室的负载锁定，设置在负载锁中并被配置为支撑加载锁中的晶片的晶片基座，以及 远程等离子体源，被配置为向负载锁提供远程等离子体。

公开(公告)号：US20110120377A1

公开(公告)日：2011-05-26

申请号：US13019854

申请日：2011-02-02

申请人： George Andrew Antonelli ,  Jennifer O'Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

发明人： George Andrew Antonelli ,  Jennifer O'Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

IPC分类号： H01L21/4763

CPC分类号： H01L21/02068 ,  C23C16/0245 ,  C23C16/54 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02074 ,  H01L21/02315 ,  H01L21/3105 ,  H01L21/67201 ,  H01L21/76826 ,  H01L21/76862 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.

摘要翻译： 本文公开了通过远程等离子体处理在半导体晶片制造工艺中清洁界面的实施例。 例如，在一个所公开的实施例中，半导体处理装置包括处理室，经由传送端口耦合到处理室的负载锁，设置在负载锁中并被配置为支撑加载锁中的晶片的晶片基座， 远程等离子体源，被配置为将远程等离子体提供给负载锁定;以及离子过滤器，其布置在远程等离子体源和晶片基座之间。

公开(公告)号：US20100317178A1

公开(公告)日：2010-12-16

申请号：US12484047

申请日：2009-06-12

申请人： George Andrew Antonelli ,  Jennifer O' Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

发明人： George Andrew Antonelli ,  Jennifer O' Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

IPC分类号： H01L21/3205 ,  C23C16/513 ,  C23C16/02 ,  H01L21/31

CPC分类号： H01L21/02068 ,  C23C16/0245 ,  C23C16/54 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02074 ,  H01L21/02315 ,  H01L21/3105 ,  H01L21/67201 ,  H01L21/76826 ,  H01L21/76862 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.

摘要翻译： 本文公开了通过远程等离子体处理在半导体晶片制造工艺中清洁界面的实施例。 例如，在一个所公开的实施例中，半导体处理装置包括处理室，经由传送端口耦合到处理室的负载锁，设置在负载锁中并被配置为支撑加载锁中的晶片的晶片基座， 远程等离子体源，被配置为将远程等离子体提供给负载锁定;以及离子过滤器，其布置在远程等离子体源和晶片基座之间。