公开(公告)号：US20120105692A1

公开(公告)日：2012-05-03

申请号：US12915888

申请日：2010-10-29

申请人： Kristin M. ACKERSON ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Robert K. LEIDY ,  Richard J. RASSEL ,  Robert M. RASSEL

发明人： Kristin M. ACKERSON ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Robert K. LEIDY ,  Richard J. RASSEL ,  Robert M. RASSEL

IPC分类号： H04N5/335 ,  G06F9/45 ,  H01L31/18

CPC分类号： H04N5/238 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H04N5/3591

摘要： A method of preventing blooming in a pixel array includes affecting an amount of light that impinges on a photoelectric conversion element by adjusting a transmissivity of an electrochromic element based on an output of the photoelectric conversion element.

摘要翻译： 防止像素阵列中的起霜的方法包括通过基于光电转换元件的输出调节电致变色元件的透射率来影响照射到光电转换元件上的光量。

公开(公告)号：US20130334701A1

公开(公告)日：2013-12-19

申请号：US13527131

申请日：2012-06-19

申请人： Jeffrey P. GAMBINO ,  Jessica A. LEVY ,  Cameron E. LUCE ,  Daniel S. VANSLETTE ,  Bucknell C. WEBB

发明人： Jeffrey P. GAMBINO ,  Jessica A. LEVY ,  Cameron E. LUCE ,  Daniel S. VANSLETTE ,  Bucknell C. WEBB

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.

摘要翻译： 公开了一种具有侧壁粗糙度的贯通硅通孔及其制造方法。 该方法包括在基板中形成通孔，并通过在通孔内沉积材料来粗糙化通孔的侧壁。 该方法还包括去除衬底的背面以形成具有粗糙化侧壁结构的通孔。

公开(公告)号：US20130187246A1

公开(公告)日：2013-07-25

申请号：US13354705

申请日：2012-01-20

申请人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

发明人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC分类号： H01L29/84 ,  G06F17/50 ,  H01L21/02

CPC分类号： H01L41/293 ,  G06F17/5063 ,  G06F17/5068 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/24 ,  H01L25/16 ,  H01L27/0694 ,  H01L28/40 ,  H01L41/0815 ,  H01L41/25 ,  H01L2224/03009 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/12105 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/24145 ,  H01L2225/06548 ,  H03H9/64

摘要： A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.

公开(公告)号：US20140131661A1

公开(公告)日：2014-05-15

申请号：US14076714

申请日：2013-11-11

申请人： James W. ADKISSON ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Molly J. LEITCH

发明人： James W. ADKISSON ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Molly J. LEITCH

IPC分类号： H01L29/16 ,  H01L27/12 ,  H01L29/778

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  H01L27/1222 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/785 ,  H01L29/78684 ,  H01L29/78696

摘要： Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material.

摘要翻译： 制造半导体结构，包括：在心轴的侧壁上形成种子材料; 在种子材料上形成石墨烯场效应晶体管（FET）; 并移除种子材料。

公开(公告)号：US20130187729A1

公开(公告)日：2013-07-25

申请号：US13358172

申请日：2012-01-25

申请人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

发明人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC分类号： H03H9/64 ,  G06F17/50 ,  H03H3/00

CPC分类号： H03H9/13 ,  G06F17/5081 ,  H01L41/08 ,  H03H3/08 ,  H03H9/02543 ,  H03H9/64 ,  H03H9/6403 ,  H03H9/6413 ,  H03H2003/0071 ,  H03H2009/02299 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49155

摘要： Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.

公开(公告)号：US20130169383A1

公开(公告)日：2013-07-04

申请号：US13342375

申请日：2012-01-03

申请人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

发明人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC分类号： H03H9/00 ,  H01L21/02 ,  G06F17/50 ,  H03H9/64 ,  H03H9/54

CPC分类号： H03H3/04 ,  B81B7/008 ,  B81B7/02 ,  G06F17/5045 ,  H01L41/094 ,  H01L41/0973 ,  H03H3/08 ,  H03H9/0542 ,  H03H9/0547 ,  H03H9/1064 ,  H03H9/1092 ,  H03H9/48 ,  H03H9/542 ,  H03H9/6403 ,  H03H9/6423 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49156

摘要： Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

公开(公告)号：US20130147319A1

公开(公告)日：2013-06-13

申请号：US13323285

申请日：2011-12-12

申请人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

发明人： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC分类号： H01L41/053 ,  H01L21/50 ,  H01L21/66

CPC分类号： H03H3/04 ,  C23C16/401 ,  C23C16/402 ,  H03H3/007 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/105 ,  H03H9/1085 ,  H03H9/1092 ,  H03H9/173 ,  H03H2003/021 ,  H03H2003/0428 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49155

摘要： Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device.

摘要翻译： 制造半导体结构，包括通过围绕FBAR器件的密封层的通气孔来修改膜体声波谐振器（FBAR）器件的频率。

公开(公告)号：US20130146847A1

公开(公告)日：2013-06-13

申请号：US13492131

申请日：2012-06-08

申请人： James W. ADKISSON ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Molly J. LEITCH ,  Edward J. NOWAK

发明人： James W. ADKISSON ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Molly J. LEITCH ,  Edward J. NOWAK

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/16

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  H01L27/1222 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/785 ,  H01L29/78684 ,  H01L29/78696

摘要： Manufacturing a semiconductor structure including: forming a seed material on an insulator layer; forming a graphene field effect transistor (FET) on the seed material; and forming an air gap under the graphene FET by removing the seed material.

摘要翻译： 制造半导体结构，包括：在绝缘体层上形成种子材料; 在种子材料上形成石墨烯场效应晶体管（FET）; 并通过除去种子材料在石墨烯FET下方形成气隙。

公开(公告)号：US20110281409A1

公开(公告)日：2011-11-17

申请号：US12778319

申请日：2010-05-12

申请人： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Kirk D. PETERSON ,  Jed H. RANKIN

发明人： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Kirk D. PETERSON ,  Jed H. RANKIN

IPC分类号： H01L21/8238 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/1083 ,  H01L29/6653 ,  H01L29/66537 ,  H01L29/6659 ,  H01L29/78 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/7849

摘要： An improved semiconductor device manufactured using, for example, replacement gate technologies. The method includes forming a dummy gate structure having a gate stack and spacers. The method further includes forming a dielectric material adjacent to the dummy gate structure. The method further includes removing the spacers to form gaps, and implanting a halo extension through the gaps and into an underlying diffusion region.

摘要翻译： 使用例如替换栅极技术制造的改进的半导体器件。 该方法包括形成具有栅极堆叠和间隔物的虚拟栅极结构。 该方法还包括形成与虚拟栅极结构相邻的电介质材料。 该方法还包括去除间隔物以形成间隙，并且通过间隙注入卤素延伸并进入下面的扩散区域。

公开(公告)号：US20130244348A1

公开(公告)日：2013-09-19

申请号：US13420637

申请日：2012-03-15

申请人： Jeffrey P. GAMBINO ,  Derrick LIU ,  Dale W. MARTIN ,  Gerd PFEIFFER

发明人： Jeffrey P. GAMBINO ,  Derrick LIU ,  Dale W. MARTIN ,  Gerd PFEIFFER

IPC分类号： H01L21/66

CPC分类号： H01L22/14 ,  H01L21/324 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are provided for fine tuning substrate resistivity. The method includes measuring a resistivity of a substrate after an annealing process, and fine tuning a subsequent annealing process to achieve a target resistivity of the substrate. The fine tuning is based on the measured resistivity.

摘要翻译： 提供了微调衬底电阻率的方法。 该方法包括测量退火处理之后的衬底的电阻率，并且微调随后的退火工艺以实现衬底的目标电阻率。 微调基于测量的电阻率。