公开(公告)号：US20220403509A1

公开(公告)日：2022-12-22

申请号：US17350125

申请日：2021-06-17

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: C23C16/44 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50

Abstract: According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

公开(公告)号：US20220235462A1

公开(公告)日：2022-07-28

申请号：US17577656

申请日：2022-01-18

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Hideki YUASA ,  Yutaka FUJINO ,  Yoshiyuki KONDO ,  Hiroyuki IKUTA

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/511

Abstract: A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

公开(公告)号：US20210111003A1

公开(公告)日：2021-04-15

申请号：US17063260

申请日：2020-10-05

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Hirokazu UEDA ,  Eiki KAMATA ,  Mitsutoshi ASHIDA ,  Isao GUNJI

IPC: H01J37/32 ,  B08B7/00

Abstract: A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

公开(公告)号：US20210090888A1

公开(公告)日：2021-03-25

申请号：US17041767

申请日：2019-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Jinwang LI ,  Masahiro OKA ,  Yoshimasa WATANABE ,  Yuuki YAMAMOTO ,  Hiroyuki IKUTA

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/28

Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

公开(公告)号：US20190244838A1

公开(公告)日：2019-08-08

申请号：US16263236

申请日：2019-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Hirokazu UEDA ,  Yuuki YAMAMOTO

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/511

CPC classification number: H01L21/67063 ,  C23C16/0236 ,  C23C16/401 ,  C23C16/455 ,  C23C16/511 ,  H01L21/02129 ,  H01L21/02274

Abstract: A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.

公开(公告)号：US20160351398A1

公开(公告)日：2016-12-01

申请号：US15165085

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Hidenori MIYOSHI ,  Masahiro OKA ,  Genji NAKAMURA ,  Yuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01L21/324 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32293 ,  H01J37/32724 ,  H01L21/324 ,  H01L29/16

Abstract: Disclosed is a method of manufacturing a semiconductor element by implanting a dopant to a substrate to be processed. High frequency plasma is generated within a processing container by using microwaves. By using the generated high frequency plasma, a plasma doping treatment is performed on a germanium-containing to-be-processed substrate which is held on a holding table within the processing container.

Abstract translation: 公开了一种通过将掺杂剂注入到待处理的基板上来制造半导体元件的方法。 通过使用微波在处理容器内产生高频等离子体。 通过使用所生成的高频等离子体，对保持在处理容器内的保持台上的含锗被处理基板进行等离子体掺杂处理。

公开(公告)号：US20140302666A1

公开(公告)日：2014-10-09

申请号：US14244481

申请日：2014-04-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Peter VENTZEK ,  Takenao NEMOTO ,  Hirokazu UEDA ,  Yuuki KOBAYASHI ,  Masahiro HORIGOME

IPC: H01L21/223 ,  H01J37/32

CPC classification number: H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449 ,  H01L29/66803

Abstract: A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process.

Abstract translation: 一种用掺杂剂掺杂衬底表面的方法和装置，掺杂剂例如是膦或胂。 用主要由诸如氦或氩的惰性气体形成的等离子体进行掺杂，掺杂剂浓度低。 为了提供适形掺杂，优选地形成掺杂剂的单层，在掺杂过程期间切换气流引入位置，其中气体混合物主要通过处理室中的中心顶端口在第一时间段内引入，随后引入 的气体混合物主要通过外围或边缘注入端口持续第二时间段，其中切换以等离子体处理交替的方式继续。

公开(公告)号：US20250144892A1

公开(公告)日：2025-05-08

申请号：US19010575

申请日：2025-01-06

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Kenji SEKIGUCHI ,  Mitsuaki IWASHITA

IPC: B29C65/48

Abstract: A bonding method includes a first operation of preparing a first substrate having a first surface and a second substrate having a second surface, each of the first surface and the second surface having a first region in which an insulating film is exposed and a second region in which a conductive film is exposed, a second operation of applying an ionic liquid to at least one of the first surface of the first substrate or the second surface of the second substrate, and a third operation of bonding the first surface of the first substrate and the second surface of the second substrate with the ionic liquid.

公开(公告)号：US20250067664A1

公开(公告)日：2025-02-27

申请号：US18726285

申请日：2022-12-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masafumi ASANO ,  Takanobu KAITSUKA ,  Yuji OTSUKI ,  Yasutoshi UMEHARA

IPC: G01N21/3563 ,  B23K26/364 ,  C23C16/02 ,  C23C16/04 ,  C23C16/52 ,  G01N21/95

Abstract: There is provided a determination method comprising: a post-embedding measurement step for performing spectroscopic measurement on a substrate in which a pattern including a recess is formed, the recess having an embedding material embedded therein, and measuring an absorbance spectrum of the substrate having the embedding material embedded therein; and a determination step for determining an embedded state of the recess based on an integrated value of an intensity of the measured absorbance spectrum of the substrate at a plurality of wavenumbers.

公开(公告)号：US20230111710A1

公开(公告)日：2023-04-13

申请号：US17960746

申请日：2022-10-05

Applicant: Tokyo Electron Limited

Inventor： Takeya INOUE ,  Kenji SEKIGUCHI ,  Mitsuaki IWASHITA ,  Hirokazu UEDA ,  Koji AKIYAMA ,  Ryuichi ASAKO

IPC: B01D11/04 ,  B01D17/02 ,  B08B3/08 ,  C07C29/86

Abstract: A purification processing apparatus for supplying purified isopropyl alcohol to a substrate processing apparatus. The purification processing apparatus includes: a processing chamber in which unpurified isopropyl alcohol and ionic liquid are mixed, and the isopropyl alcohol and the ionic liquid are separated to purify the isopropyl alcohol; an unpurified solvent supply port configured to supply the unpurified isopropyl alcohol to the processing chamber; an ionic liquid supply port configured to supply the ionic liquid to the processing chamber; and a purified solvent outlet configured to supply the purified isopropyl alcohol from the processing chamber to the substrate processing apparatus.