公开(公告)号：US10522467B2

公开(公告)日：2019-12-31

申请号：US15637780

申请日：2017-06-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Toshiaki Fujisato ,  Cheonsoo Han

IPC: H01L23/48 ,  H01L23/52 ,  H01L21/44 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/285

Abstract: There is provided a ruthenium wiring, including: a TiON film formed as a base film in a recess formed in a predetermined film on a surface of a substrate; and a ruthenium film formed on the TiON film so as to fill the recess.

公开(公告)号：US09607888B2

公开(公告)日：2017-03-28

申请号：US14613086

申请日：2015-02-03

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Toshio Hasegawa ,  Tadahiro Ishizaka ,  Manabu Oie ,  Fumitaka Amano ,  Steven Consiglio ,  Cory Wajda ,  Kaoru Maekawa ,  Gert J. Leusink

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  C23C16/04 ,  C23C16/34

CPC classification number: H01L21/76846 ,  C23C16/045 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for integration of atomic layer deposition (ALD) of barrier layers and chemical vapor deposition (CVD) of Ru liners for Cu filling of narrow recessed features for semiconductor devices are disclosed in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a conformal barrier layer by ALD in the recessed feature, where the barrier layer contains TaN or TaAlN, depositing a conformal Ru liner by CVD on the barrier layer, and filling the recessed feature with Cu metal.

公开(公告)号：US09576850B2

公开(公告)日：2017-02-21

申请号：US14374879

申请日：2013-01-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC: H01L21/768 ,  C23C16/16 ,  H01L23/532 ,  C23C16/02 ,  H01L21/3105 ,  H01L21/285 ,  H01L21/02

CPC classification number: H01L21/76879 ,  C23C16/0272 ,  C23C16/16 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: When a recess is formed in a SiCOH film, C is removed from the film to form a damage layer. If the damage layer is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas or a gas containing trimethyl aluminum to the SiCOH film, B, Si or Al is adsorbed on the SiCOH film. These atoms bond with Ru and a Ru film is easily formed on the SiCOH film. The Ru film is formed using, for example, Ru3(CO)12 gas and CO gas. Copper is filled in the recess and an upper side wiring structure is formed by carrying out CMP processing.

Abstract translation: 当在SiCOH膜中形成凹部时，从膜中除去C以形成损伤层。 如果通过氢氟酸等去除损伤层，则表面变得疏水。 通过供给硼化合物气体，硅化合物气体或含有三甲基铝的气体到SiCOH膜B，Si或Al被吸附在SiCOH膜上。 这些原子与Ru结合，容易在SiCOH膜上形成Ru膜。 Ru膜使用例如Ru 3（CO）12气体和CO气体形成。 铜填充在凹部中，并且通过进行CMP处理形成上侧布线结构。

公开(公告)号：US20160358815A1

公开(公告)日：2016-12-08

申请号：US15172648

申请日：2016-06-03

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Gerrit J. Leusink ,  Cory Wajda ,  Tadahiro Ishizaka ,  Takahiro Hakamata

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L23/5226 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/53242

Abstract: A method is provided for at least partially filling a feature in a substrate. The method includes providing a substrate containing a feature, depositing a ruthenium (Ru) metal layer to at least partially fill the feature, and heat-treating the substrate to reflow the Ru metal layer in the feature.

Abstract translation: 提供了一种用于至少部分地填充衬底中的特征的方法。 该方法包括提供含有特征的基底，沉积钌（Ru）金属层以至少部分地填充该特征，以及热处理该基底以使特征中的Ru金属层回流。

公开(公告)号：US09425093B2

公开(公告)日：2016-08-23

申请号：US14561331

申请日：2014-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Takashi Sakuma ,  Osamu Yokoyama ,  Kai-Hung Yu

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/285 ,  C23C16/52 ,  C23C14/24 ,  C23C14/54 ,  C23C14/34

CPC classification number: C23C14/34 ,  C23C14/046 ,  C23C14/165 ,  C23C14/24 ,  C23C14/54 ,  C23C16/52 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A Cu wiring forming method of forming Cu wiring that is to be arranged in contact with tungsten wiring, by filling Cu into a recess formed in a substrate, includes: removing a tungsten oxide formed on a surface of the tungsten wiring; forming a nitriding preventing film at least on the surface of the tungsten wiring in the recess; forming a barrier film that prevents diffusion of Cu, on a surface in the recess from above the nitriding preventing film; forming a liner film on the barrier film; and filling a Cu film on the liner film.

Abstract translation: 通过将Cu填充到形成在基板中的凹部中，形成与钨布线接触而布置的Cu布线的Cu布线形成方法包括：去除形成在钨布线的表面上的氧化钨; 至少在所述凹部中的所述钨线的表面上形成防氮膜; 形成阻止膜从氮化防止膜上方阻止在凹部的表面上的扩散的阻挡膜; 在阻挡膜上形成衬垫膜; 并在衬膜上填充Cu膜。

公开(公告)号：US09368418B2

公开(公告)日：2016-06-14

申请号：US14464684

申请日：2014-08-20

Applicant: Tokyo Electron Limited

Inventor： Tadahiro Ishizaka ,  Kenji Suzuki

IPC: H01L21/768 ,  H01L23/00 ,  C23C14/16 ,  C23C14/35 ,  H01J37/34 ,  H01J37/32 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L23/00 ,  C23C14/165 ,  C23C14/358 ,  H01J37/32899 ,  H01J37/34 ,  H01J37/3429 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a Cu wiring structure forming method, a barrier film serving as a Cu diffusion barrier is formed at least on a surface of a recess in a first insulating film formed on a substrate, and the recess is filled with an Al-containing Cu film. A Cu wiring is formed from the Al-containing Cu film, and a cap layer including a Ru film is formed on the Cu wiring. Further, an interface layer containing a Ru—Al alloy is formed at an interface between the Cu wiring and the cap layer by heat generated in forming the cap layer or by a heat treatment performed after forming the cap layer. A second insulating film is formed on the cap layer.

Abstract translation: 在Cu布线结构形成方法中，至少在形成在基板上的第一绝缘膜的凹部的表面上形成用作Cu扩散阻挡层的阻挡膜，并且用含Al的Cu膜填充凹部。 由含Al的Cu膜形成Cu布线，在Cu布线上形成包含Ru膜的覆盖层。 此外，通过在形成盖层时产生的热或通过在形成盖层之后进行的热处理，在Cu布线和盖层之间的界面处形成含有Ru-Al合金的界面层。 在盖层上形成第二绝缘膜。

公开(公告)号：US09064690B2

公开(公告)日：2015-06-23

申请号：US13962327

申请日：2013-08-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenji Suzuki ,  Tatsuo Hatano ,  Hiroyuki Toshima ,  Yasushi Mizusawa

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/312

CPC classification number: H01L21/02104 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/312 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A Cu wiring forming method forms Cu wiring in a recess of a predetermined pattern including a trench formed in an insulating film on a substrate surface. The method includes: forming a barrier film at least on a surface of the recess; forming a Cu film by PVD to fill the recess with the Cu film; forming an additional layer on the Cu film; polishing an entire surface by CMP to form the Cu wiring in the recess; forming a metal cap including a manganese oxide film on an entire surface including the insulating film and the Cu wiring of the substrate after performing the CMP polishing; and forming a dielectric cap on the metal cap.

Abstract translation: Cu布线形成方法在包括形成在基板表面上的绝缘膜中的沟槽的预定图案的凹部中形成Cu布线。 该方法包括：至少在凹部的表面上形成阻挡膜; 通过PVD形成Cu膜以用Cu膜填充凹部; 在Cu膜上形成附加层; 通过CMP抛光整个表面以在凹槽中形成Cu布线; 在进行CMP抛光之后，在包括绝缘膜和基板的Cu布线的整个表面上形成包括氧化锰膜的金属盖; 以及在所述金属盖上形成电介质盖。

公开(公告)号：US11387112B2

公开(公告)日：2022-07-12

申请号：US16587760

申请日：2019-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi Takatsuki ,  Tadahiro Ishizaka ,  Mikio Suzuki ,  Toshio Hasegawa

IPC: H01L21/311 ,  H01L21/285 ,  C23C16/455 ,  C23C16/02 ,  C23C16/06 ,  H01L21/768

Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.

公开(公告)号：US10483100B2

公开(公告)日：2019-11-19

申请号：US15273383

申请日：2016-09-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Masaki Koizumi ,  Masaki Sano ,  Seokhyoung Hong

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/30 ,  C23C16/455 ,  H01L27/11582 ,  H01L49/02

Abstract: A TiON film forming method is provided. A cycle of forming a unit TiN film at a predetermined processing temperature by alternately supplying a Ti-containing gas and a nitriding gas into the processing chamber accommodating a target substrate and oxidizing the unit TiN film by supplying an oxidizing agent into the processing chamber is repeated multiple times. In an initial stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X1 times and supplying the oxidizing agent is repeated Y1 times. In a later stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X2 times and supplying the oxidizing agent is repeated Y2 times until a desired film thickness is obtained. The number of repetition X1 is set to be greater than the number of repetition X2.

公开(公告)号：US09779950B2

公开(公告)日：2017-10-03

申请号：US15043675

申请日：2016-02-15

Applicant: Tokyo Electron Limited

Inventor： Tadahiro Ishizaka

IPC: H01L21/00 ,  H01L21/285 ,  C23C16/16 ,  C23C16/448 ,  C23C16/455 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/16 ,  C23C16/4481 ,  C23C16/45523 ,  C23C16/45561 ,  H01L21/76843 ,  H01L23/53238

Abstract: A ruthenium film forming method includes a deposition process of introducing a mixed gas of a ruthenium carbonyl gas and a CO gas into a processing vessel 1 by supplying the CO gas as a carrier gas from a CO gas container 43 configured to contain the CO gas into a film forming source container 41 configured to contain ruthenium carbonyl in a solid state as a film forming source material, and forming ruthenium film by decomposing the ruthenium carbonyl on a wafer W; and a CO gas introduction process of bringing the CO gas into contact with a surface of the wafer W by introducing the CO gas directly into the processing vessel 1 from the CO gas container 43 after stopping the introducing of the mixed gas into the processing vessel 1. The deposition process and the CO gas introduction process are repeated multiple times.