公开(公告)号：US06667264B2

公开(公告)日：2003-12-23

申请号：US10326957

申请日：2002-12-20

申请人： Kiyoshi Araki ,  Tsuneaki Ohashi ,  Katsuhiro Inoue ,  Masaaki Masuda

发明人： Kiyoshi Araki ,  Tsuneaki Ohashi ,  Katsuhiro Inoue ,  Masaaki Masuda

IPC分类号： C04B35587

CPC分类号： C04B35/584 ,  C04B35/5935 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/3895 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/668 ,  C04B2235/766 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607

摘要： A silicon nitride sintered material includes a polycrystal material having silicon nitride crystal grains and a grain boundary phase. The sintered material contains a Yb element in an amount of 2 to 30% by weight in terms of its oxide and an Al element in an amount of 1 to 20% by weight in terms of its oxide and has a thermal conductivity of 40 W/mK or less at room temperature, a resistivity of 1×105to 1×1012 &OHgr;·cm at room temperature, and a porosity of 0.5% or less.

摘要翻译： 氮化硅烧结体包括具有氮化硅晶粒和晶界相的多晶材料。 该烧结体的氧化物含有2〜30重量％的Yb元素，以氧化物换算为1〜20重量％的Al元素，导热系数为40W / mK以下，室温下的电阻率为1×10 5〜1×10 12Ω·cm，孔隙率为0.5％以下。

公开(公告)号：US07170186B2

公开(公告)日：2007-01-30

申请号：US11179216

申请日：2005-07-12

申请人： Kiyoshi Araki ,  Masahiro Kida ,  Takahiro Ishikawa ,  Yuki Bessyo ,  Takuma Makino

发明人： Kiyoshi Araki ,  Masahiro Kida ,  Takahiro Ishikawa ,  Yuki Bessyo ,  Takuma Makino

IPC分类号： H01L23/00

CPC分类号： H01L24/32 ,  C04B37/026 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3873 ,  C04B2235/616 ,  C04B2235/6565 ,  C04B2235/9607 ,  C04B2237/064 ,  C04B2237/083 ,  C04B2237/121 ,  C04B2237/122 ,  C04B2237/125 ,  C04B2237/127 ,  C04B2237/128 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/56 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/72 ,  C23C4/02 ,  C23C4/08 ,  C23C6/00 ,  C23C24/10 ,  C23C24/106 ,  H01L23/3733 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/473 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/19107 ,  H01L2924/351 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/252 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01022 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00015

摘要： A laminated radiation member includes a radiation plate, an insulation substrate bonded to the upper surface of the radiation plate and an electrode provided on the upper surface of the insulation substrate. The laminated radiation member is made by a method including the steps of surface treating a bonding surface of the radiation plate and/or the insulation substrate, interposing ceramic particles surface treated to assure wettability with a hard solder or a metal between the radiation plate and the insulation substrate, disposing a hard solder above and/or below the ceramic particles, heating the hard solder to a temperature higher than the melting point of the solder, penetrating the molten hard solder into spaces between the ceramic particles to react the ceramic particles with the solder to produce a metal base composite material, and bonding the radiation plate and the insulation substrate with the metal base composite material.

摘要翻译： 叠层辐射构件包括辐射板，结合到辐射板的上表面的绝缘基板和设置在绝缘基板的上表面上的电极。 叠层辐射构件通过以下方法制造：包括以下步骤：对辐射板和/或绝缘基板的接合表面进行表面处理，将处理的陶瓷颗粒插入表面，以确保在辐射板和辐射板之间的硬焊料或金属的润湿性 绝缘基板，在陶瓷颗粒上方和/或下方设置硬焊料，将硬焊料加热到高于焊料熔点的温度，将熔融的硬焊料穿入陶瓷颗粒之间的空间，使陶瓷颗粒与 焊料以制造金属基复合材料，并且用金属基复合材料将辐射板和绝缘基板接合。

公开(公告)号：US06391812B1

公开(公告)日：2002-05-21

申请号：US09579970

申请日：2000-05-26

申请人： Kiyoshi Araki ,  Katsuhiro Inoue

发明人： Kiyoshi Araki ,  Katsuhiro Inoue

IPC分类号： C04B35587

CPC分类号： C04B35/5935 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H01L2924/00

摘要： A method of producing the silicon nitride sintered body includes the steps of forming a compact of molding materials including silicon nitride powder, a Mg component and a sintering aid, and sintering the molding materials at 1,800 to 2,000° C. under a nitrogen atmosphere. The materials at least include an oxide of Mg in a range of 0.3 to 10 wt. %. A constant temperature is kept for at least 0.5 hours in a temperature range of 1,400 to 1,700° C. before the temperature is increased to the sintering temperature. A silicon nitride body having high thermal conductivity and excellent electrical insulation properties at high temperature can thus be provided.

摘要翻译： 制造氮化硅烧结体的方法包括以下步骤：形成包含氮化硅粉末，Mg组分和烧结助剂的成型材料的压坯，并在氮气气氛下在1,800至2,000℃下烧结成型材料。 这些材料至少包括0.3至10重量％的Mg的氧化物。 ％。 在温度升至烧结温度之前，在1400〜1700℃的温度范围内将恒温保持至少0.5小时。 因此可以提供具有高导热性和高温下优异的电绝缘性能的氮化硅体。

公开(公告)号：US06171905B2

公开(公告)日：2001-01-09

申请号：US09192537

申请日：1998-11-17

申请人： Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Koichiro Yuki ,  Kiyoshi Araki

发明人： Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Koichiro Yuki ,  Kiyoshi Araki

IPC分类号： H01L21336

CPC分类号： H01L21/76264 ,  H01L21/76267 ,  H01L21/76281 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/7606 ,  H01L29/882

摘要： The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO2 type quantum device can be manufactured with ease at a low cost.

摘要翻译： 本发明提供一种半导体器件，其具有各种功能，例如双稳态存储器和逻辑电路，其中在公共衬底上形成有MOS半导体元件，谐振隧道二极管，热电子晶体管等。 在SOI衬底上形成由隔离氧化膜包围的n型Si层和p型Si层。 形成掩模氧化膜和栅极氧化膜，并且通过使用掩模氧化膜作为掩模对n型Si层进行结晶各向异性蚀刻，以将n型Si层改变为 薄Si板。 在该n型Si层的侧面上形成第一和第二隧道氧化物膜之后，共用隧道二极管的第一和第二多晶硅电极和用作MOS半导体元件的栅电极的多晶硅电极由共同的 多晶硅膜。 因此，可以容易地以低成本制造Si / SiO 2型量子器件。

公开(公告)号：US5462821A

公开(公告)日：1995-10-31

申请号：US340725

申请日：1994-11-16

申请人： Takashi Onoue ,  Kiyoshi Araki ,  Noriya Ishida ,  Toshiya Kitamura ,  Yasuhiko Niitsu ,  Makiko Yanagisawa ,  Ryo Sakamoto ,  Fumihiro Sato

发明人： Takashi Onoue ,  Kiyoshi Araki ,  Noriya Ishida ,  Toshiya Kitamura ,  Yasuhiko Niitsu ,  Makiko Yanagisawa ,  Ryo Sakamoto ,  Fumihiro Sato

IPC分类号： H01M4/02 ,  H01M4/38 ,  H01M4/48 ,  H01M6/04 ,  H01M6/10 ,  H01M10/24 ,  H01M10/26 ,  H01M12/06 ,  H01M4/58 ,  G01N27/26

CPC分类号： H01M10/24 ,  H01M10/26 ,  H01M12/06 ,  H01M4/38 ,  H01M6/04 ,  H01M2004/027 ,  H01M2300/0014 ,  H01M4/48 ,  H01M6/10

摘要： A novel primary or secondary battery whose active material for the negative electrode is composed of metallic gallium, gallium alloys or gallium oxide has first come into the world.Gallium has an electrochemical equivalent of 23.24, which is smaller than those of zinc (32.70) and cadmium (56.21). This indicates that when used as an active material for the negative electrode in batteries, gallium has larger capacity per unit mass than zinc and cadmium by respective factors of ca. 1.4 and 2.4. The potential of the reaction; Ga+6OH.sup.- =GaO.sub.3.sup.3- +3H.sub.2 O+3e.sup.- is obviously less noble than the voltage of hydrogen evolution and this means that a high-potential battery can be made. Due to the high hydrogen overvoltage of gallium, gallium ions in the solution can be precipitated as metallic gallium by electrodeposition. As a further advantage, no dendrite formation occurs during the electrodeposition unlike in the case of zinc. The high hydrogen overvoltage also contributes to the production of a battery that undergoes only limited self-discharge. What is more, gallium which has no toxicity presents few environmental problems.

摘要翻译： 一种新型的一次或二次电池，其负极活性物质由金属镓，镓合金或氧化镓组成，已经进入世界。 镓的电化学当量为23.24，小于锌（32.70）和镉（56.21）的电化学当量。 这表明，当用作电池中的负极的活性材料时，镓的每单位质量的量比锌和镉的相应因素大。 1.4和2.4。 反应的潜力; Ga + 6OH- = GaO33- + 3H2O + 3e-明显低于氢析出电压的高度，这意味着可以制造高电位电池。 由于镓的高氢过电压，溶液中的镓离子可以通过电沉积作为金属镓沉淀。 作为另外的优点，在电沉积期间不发生枝晶形成，这与锌的情况不同。 高氢过电压也有助于生产仅经受有限自放电的电池。 而且，没有毒性的镓会带来很少的环境问题。

公开(公告)号：US20130043186A1

公开(公告)日：2013-02-21

申请号：US13634379

申请日：2009-11-06

申请人： Kiyoshi Araki ,  Masaaki Kawai ,  Shigeharu Hashimoto

发明人： Kiyoshi Araki ,  Masaaki Kawai ,  Shigeharu Hashimoto

IPC分类号： B01D63/00

CPC分类号： B01D61/362 ,  B01D63/066 ,  B01D67/0067 ,  B01D2325/04 ,  C10G31/11

摘要： There are disclosed a method for separating a liquid mixture in which a permeation performance enhances, and a composition of the liquid mixture containing a hydrocarbon liquid and an alcohol liquid at supply and a composition after membrane permeation are changed by a separating operation, and a device for separating a liquid mixture. The liquid mixture containing the hydrocarbon liquid and the alcohol liquid is used as a supply mixture liquid, and at least part of the supply mixture liquid is, in a liquid state, brought into contact with a membrane supply side of a separation membrane, and discharged in a vapor state through a membrane permeation side of the separation membrane, whereby a composition of a mixture vapor which is balanced with the supply mixture liquid becomes different from a composition of a vapor on the membrane permeation side.

摘要翻译： 公开了一种分离渗透性能提高的液体混合物的方法，通过分离操作改变在供给时含有烃液体和醇液体的液体混合物和膜渗透后的组成的组成， 用于分离液体混合物。 将含有烃液体和醇液体的液体混合物用作供给混合液体，至少部分供液混合液体处于液态，与分离膜的膜供给侧接触并排出 在蒸气状态下通过分离膜的膜渗透侧，由此与供给混合液平衡的混合蒸气的组成变得与膜透过侧的蒸气的组成不同。

公开(公告)号：US20110160039A1

公开(公告)日：2011-06-30

申请号：US12966023

申请日：2010-12-13

申请人： Shuji HIMENO ,  Teruaki Takeuchi ,  Shuichi Yoshida ,  Kiyoshi Araki ,  Toshihiro Tomita

发明人： Shuji HIMENO ,  Teruaki Takeuchi ,  Shuichi Yoshida ,  Kiyoshi Araki ,  Toshihiro Tomita

IPC分类号： B01J29/00

CPC分类号： B01J29/70 ,  B01J31/06 ,  B01J2229/42

摘要： There is provided a zeolite membrane which is thinner than a conventional membrane and which has improved permeability and a method for manufacturing the zeolite membrane. The method includes a surface layer forming step for forming a surface layer by attaching a low polar polymer on a first surface of a porous substrate to cover the surface, a filling step for filling a masking polymer into pores in the porous substrate from a surface different from the first surface of the porous substrate up to the surface layer by impregnating the porous substrate with the masking polymer and solidifying the masking polymer, and a surface layer removing step for removing the surface layer. After the surface layer removing step, a zeolite membrane is formed on the first surface of the porous substrate.

摘要翻译： 提供比常规膜更薄并且具有改善的渗透性的沸石膜和制造沸石膜的方法。 该方法包括用于通过在多孔基材的第一表面上附着低极性聚合物以覆盖该表面来形成表面层的表面层形成步骤，用于将掩蔽聚合物从不同的表面填充到多孔基材中的孔中的填充步骤 通过用掩蔽聚合物浸渍多孔基材并固化掩蔽聚合物，从多孔基材的第一表面直到表面层，以及去除表面层的表面层去除步骤。 在表面层去除步骤之后，在多孔基材的第一表面上形成沸石膜。

公开(公告)号：US07246086B2

公开(公告)日：2007-07-17

申请号：US10274050

申请日：2002-10-21

申请人： Kiyoshi Araki ,  Shigeo Yamamoto ,  Haruki Horikawa ,  Satoshi Kawata ,  Kayoko Maruta ,  Masumi Okada ,  Kenichi Murata ,  Masayo Takemoto

发明人： Kiyoshi Araki ,  Shigeo Yamamoto ,  Haruki Horikawa ,  Satoshi Kawata ,  Kayoko Maruta ,  Masumi Okada ,  Kenichi Murata ,  Masayo Takemoto

IPC分类号： G06Q30/00

CPC分类号： G06Q30/02 ,  G06Q20/20 ,  G06Q30/0601 ,  G06Q40/00

摘要： A My Page management server is a server that provides a personal world wide web (WWW) page named My Page for a user who has been registered as a member. The My Page management server includes a product registration unit that acquires information of a product which the user purchased, a link generation unit that generates, on the My Page, a link indicator which is linked to a product questionnaire about the product which the user purchased, based on the acquired information of the product, and a product questionnaire management unit that presents the linked product questionnaire to the user upon receiving a request for the product questionnaire from the user.

摘要翻译： “我的页面”管理服务器是为已注册为成员的用户提供名为“我的页面”的个人万维网（WWW）页面的服务器。 “我的页面”管理服务器包括产品注册单元，其获取用户购买的产品的信息;链接生成单元，其在我的页面上生成与用户购买的产品的产品问卷相关联的链接指示符 基于获取的产品信息，以及产品问卷管理单元，其在从用户接收到对产品问卷的请求时向用户呈现所链接的产品问卷。

公开(公告)号：US06661579B2

公开(公告)日：2003-12-09

申请号：US09772967

申请日：2001-01-31

申请人： Kiyoshi Araki ,  Taku Ito ,  Isao Okuda ,  Masahiro Oono ,  Moriyasu Kanai

发明人： Kiyoshi Araki ,  Taku Ito ,  Isao Okuda ,  Masahiro Oono ,  Moriyasu Kanai

IPC分类号： G02B2714

CPC分类号： G02B27/144 ,  G02B23/14

摘要： A beam splitter for a digital camera splits light passed through a photographing lens into beams directed to a CCD and a finder optical system. The beam splitter includes at least one optical element provided with a beam splitting surface that is inclined with respect to an optical axis of the photographing lens, and a multi-layer film including a plurality of layers of dielectric materials is formed on the beam splitting surface. The multi-layer film is configured such that the beam splitting surface exhibits a substantially constant reflectivity at least for visible light that is incident on the beam splitting surface at any incident angle within a predetermined range.

摘要翻译： 用于数字照相机的分束器将通过拍摄镜头的光分解成指向CCD和取景器光学系统的光束。 分束器包括至少一个光学元件，其设置有相对于拍摄镜头的光轴倾斜的分束表面，并且在分束表面上形成包括多层电介质材料的多层膜 。 多层膜被配置为使得分束表面至少对于在预定范围内以任何入射角入射在分束表面上的可见光呈现基本恒定的反射率。

公开(公告)号：US6091077A

公开(公告)日：2000-07-18

申请号：US955267

申请日：1997-10-21

申请人： Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Koichiro Yuki ,  Kiyoshi Araki

发明人： Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Koichiro Yuki ,  Kiyoshi Araki

IPC分类号： H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76 ,  H01L29/88 ,  H01L29/06

CPC分类号： H01L21/76264 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/7606 ,  H01L29/882 ,  H01L21/76267 ,  H01L21/76281

摘要： The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO.sub.2 type quantum device can be manufactured with ease at a low cost.

摘要翻译： 本发明提供一种半导体器件，其具有各种功能，例如双稳态存储器和逻辑电路，其中在公共衬底上形成有MOS半导体元件，谐振隧道二极管，热电子晶体管等。 在SOI衬底上形成由隔离氧化膜包围的n型Si层和p型Si层。 形成掩模氧化膜和栅极氧化膜，并且通过使用掩模氧化膜作为掩模对n型Si层进行结晶各向异性蚀刻，以将n型Si层改变为 薄Si板。 在该n型Si层的侧面上形成第一和第二隧道氧化物膜之后，共用隧道二极管的第一和第二多晶硅电极和用作MOS半导体元件的栅电极的多晶硅电极由共同的 多晶硅膜。 因此，可以容易地以低成本制造Si / SiO 2型量子器件。