公开(公告)号：US06821888B2

公开(公告)日：2004-11-23

申请号：US10076244

申请日：2002-02-13

申请人： Yakub Aliyu ,  Simon Chooi ,  Meisheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

发明人： Yakub Aliyu ,  Simon Chooi ,  Meisheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

IPC分类号： H01L2144

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

摘要翻译： 提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。 在暴露的金属端接垫上形成导电聚合物塞。 在导电聚合物塞上形成一个符合标准的界面层。 半导体芯片的导电聚合物插塞与相应的金属凸块对准。 导电聚合物塞上的一致界面层与相应的金属凸块配合。 一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。 还公开了形成和图案化羰基镍层的方法。

公开(公告)号：US06350689B1

公开(公告)日：2002-02-26

申请号：US09839962

申请日：2001-04-23

申请人： Paul Ho ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Yi Xu

发明人： Paul Ho ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Yi Xu

IPC分类号： H01L2144

CPC分类号： H01L21/02074 ,  H01L21/02046 ,  H01L21/0209 ,  H01L21/32136 ,  Y10S438/906

摘要： A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxidizing radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxidizing radical containing downstream plasma and vaporized chelating agent are mixed to form an oxidizing radical containing downstream plasma/vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.

摘要翻译： 一种从半导体晶片去除铜污染的方法，包括以下步骤。 提供其上具有铜污染的半导体晶片。 从第一来源提供含有下游等离子体的氧化基团（或者可以在氧化剂上使用卤素（F2，Cl2或Br2））。 从第二来源提供蒸发的螯合剂。 将含有下游等离子体和气化螯合剂的氧化基团混合以形成含有下游等离子体/汽化螯合剂混合物的氧化基团。 混合物被引导到铜污染物，使得混合物与铜污染物反应形成挥发性产物。 从晶片附近去除挥发性产物。

公开(公告)号：US06429117B1

公开(公告)日：2002-08-06

申请号：US09619018

申请日：2000-07-19

申请人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

发明人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  Y10S438/958

摘要： A method of preventing metal penetration and diffusion from metal structures formed over a semiconductor structure, comprising the following steps. A semiconductor structure including a patterned dielectric layer is provided. The patterned dielectric layer includes an opening and an upper surface. The dielectric layer surface is then passivated to form a passivation layer. A metal plug is formed within the dielectric layer opening. The passivation layer prevents penetration and diffusion of metal out from the metal plug into the semiconductor structure and the patterned dielectric layer.

摘要翻译： 一种防止在半导体结构上形成的金属结构的金属渗透和扩散的方法，包括以下步骤。 提供包括图案化介电层的半导体结构。 图案化电介质层包括开口和上表面。 然后将介电层表面钝化以形成钝化层。 在电介质层开口内形成金属塞。 钝化层防止金属从金属插塞渗入并扩散到半导体结构和图案化的介电层中。

公开(公告)号：US06705512B2

公开(公告)日：2004-03-16

申请号：US10099283

申请日：2002-03-15

申请人： Kwok Keung Paul Ho ,  Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

发明人： Kwok Keung Paul Ho ,  Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

IPC分类号： B23K3102

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/04953 ,  H01L2224/78 ,  H01L2924/00

摘要： A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.

摘要翻译： 将接合元件接合到金属接合焊盘的方法包括以下步骤。 提供了一种在层开口内具有暴露的凹陷金属接合焊盘的半导体结构。 该层具有上表面。 在金属焊盘上形成具有预定厚度的导电盖。 接合元件结合到导电盖以与金属接合焊盘形成电连接。

公开(公告)号：US06415973B1

公开(公告)日：2002-07-09

申请号：US09618672

申请日：2000-07-18

申请人： Kwok Keung Paul Ho ,  Simon Chooi ,  Yi Xu ,  Mei Sheng Zhou ,  Yakub Aliyu ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

发明人： Kwok Keung Paul Ho ,  Simon Chooi ,  Yi Xu ,  Mei Sheng Zhou ,  Yakub Aliyu ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

IPC分类号： B23K106

CPC分类号： H01L24/85 ,  B23K1/19 ,  B23K2101/40 ,  B23K2103/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/48992 ,  H01L2224/8592 ,  H01L2224/85948 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/78 ,  H01L2924/00

摘要： A method of bonding a bonding element to a metal bonding pad, comprising the following steps. A semiconductor structure having an exposed metal bonding pad within a passivation layer opening is provided. The bonding pad has an upper surface. A bonding element is positioned to contact the bonding pad upper surface. A bonding solution is applied within the passivation layer opening, covering the bonding pad and a portion of the bonding element. The structure is annealed by heating said bonding element to selectively solidify the bonding solution proximate said contact of said bonding element to said bonding pad, bonding the bonding element to the bonding pad.

摘要翻译： 一种将接合元件接合到金属接合焊盘的方法，包括以下步骤。 提供了在钝化层开口内具有暴露的金属焊盘的半导体结构。 接合垫具有上表面。 定位接合元件以接合焊盘上表面。 在钝化层开口内施加粘合溶液，覆盖粘结垫和粘合元件的一部分。 通过加热所述结合元件来对所述结构进行退火，以选择性地将所述接合元件的所述接触附近的接合溶液固化到所述接合焊盘，将所述接合元件接合到所述接合焊盘。

公开(公告)号：US06683002B1

公开(公告)日：2004-01-27

申请号：US09636580

申请日：2000-08-10

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

IPC分类号： H01L2144

CPC分类号： H01L21/76844 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/314 ,  H01L21/76807

摘要： Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.

公开(公告)号：US06417088B1

公开(公告)日：2002-07-09

申请号：US09624019

申请日：2000-07-24

申请人： Kwok Keung Paul Ho ,  Yi Xu ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

发明人： Kwok Keung Paul Ho ,  Yi Xu ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

IPC分类号： H01L2144

CPC分类号： H01L24/48 ,  H01L21/288 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/48699 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744

摘要： A method of forming a conductive cap layer over a metal bonding pad comprises the following steps. A semiconductor structure is provided having an exposed, recessed metal bonding pad within a layer opening. The layer has an upper surface. The exposed metal bonding pad is treated with a solution containing soluble metal ions to form a conductive cap over the metal bonding pad. The conductive cap layer is comprised of the solution metal and has a predetermined thickness. An external bonding element may then be bonded to the conductive cap, forming an electrical connection with the metal bonding pad.

摘要翻译： 在金属焊盘上形成导电盖层的方法包括以下步骤。 提供了一种半导体结构，其在层开口内具有暴露的凹陷的金属接合焊盘。 该层具有上表面。 暴露的金属焊盘用含有可溶性金属离子的溶液处理，以在金属焊盘上形成导电盖。 导电盖层由溶液金属构成并具有预定的厚度。 然后可以将外部接合元件接合到导电盖，与金属接合焊盘形成电连接。

公开(公告)号：US06378759B1

公开(公告)日：2002-04-30

申请号：US09618261

申请日：2000-07-18

申请人： Kwok Keung Paul Ho ,  Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

发明人： Kwok Keung Paul Ho ,  Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

IPC分类号： B23K3102

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/04953 ,  H01L2224/78 ,  H01L2924/00

摘要： A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.

摘要翻译： 将接合元件接合到金属接合焊盘的方法包括以下步骤。 提供了一种在层开口内具有暴露的凹陷金属接合焊盘的半导体结构。 该层具有上表面。 在金属焊盘上形成具有预定厚度的导电盖。 接合元件结合到导电盖以与金属接合焊盘形成电连接。

公开(公告)号：US06540841B1

公开(公告)日：2003-04-01

申请号：US09607284

申请日：2000-06-30

申请人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

发明人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

IPC分类号： B08B700

CPC分类号： B08B1/04 ,  B08B3/04

摘要： A new method and apparatus is provided that can be applied to clean outer edges of semiconductor substrates. Under the first embodiment of the invention, a brush is mounted on the surface of the substrate around the periphery of the substrate, chemicals are fed to the surface that is being cleaned by means of a hollow core on which the cleaning brush is mounted. The surface that is being cleaned rotates at a relatively high speed thereby causing the chemicals that are deposited on this surface (by the brush) to remain in the edge of the surface. Under the second embodiment of the invention, a porous roller is mounted between a chemical reservoir and the surface that is being cleaned, the surface that is being cleaned rotates at a relatively high speed. The chemicals that are deposited by the interfacing porous roller onto the surface that is being cleaned therefore remain at the edge of this surface thereby causing optimum cleaning action of the edge of the surface. After contaminants have been removed in this manner from the surface, the surface can be further cleaned by applying DI water.

摘要翻译： 提供了可用于清洁半导体衬底的外边缘的新方法和装置。 在本发明的第一实施例中，刷子安装在基板周围的基板的表面上，化学品通过其上安装有清洁刷的中空芯被供给到待清洁的表面。 待清洁的表面以相对高的速度旋转，从而使沉积在该表面（由刷子）上的化学物质残留在表面的边缘。 在本发明的第二实施例中，多孔辊安装在化学容器和待清洁的表面之间，待清洁的表面以相对较高的速度旋转。 因此，由界面多孔辊沉积在待清洗的表面上的化学物质保留在该表面的边缘，从而引起表面边缘的最佳清洁作用。 污染物以这种方式从表面除去后，可以通过加入去离子水进一步清洁表面。

公开(公告)号：US06475810B1

公开(公告)日：2002-11-05

申请号：US09636579

申请日：2000-08-10

申请人： Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu ,  Simon Chooi ,  Yakub Aliyu

发明人： Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu ,  Simon Chooi ,  Yakub Aliyu

IPC分类号： H01L2158

CPC分类号： H01L21/76834 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76832

摘要： A new method of forming a dual damascene interconnect structure, wherein damage of interconnect and contamination of dielectrics during etching is minimized by having an embedded organic stop layer over the lower interconnect and later etching the organic stop layer with an H2 containing plasma, or hydrogen radical.

摘要翻译： 形成双镶嵌互连结构的新方法，其中在蚀刻期间互连和电介质污染的损害最小化，在下互连上具有嵌入的有机阻挡层，并且随后用含H2的等离子体或氢自由基蚀刻有机阻挡层 。