公开(公告)号：US06410439B1

公开(公告)日：2002-06-25

申请号：US09527528

申请日：2000-03-16

申请人： Masako Kodera ,  Takashi Yoda ,  Motosuke Miyoshi

发明人： Masako Kodera ,  Takashi Yoda ,  Motosuke Miyoshi

IPC分类号： H01L21302

CPC分类号： B24B37/013 ,  H01L21/30625 ,  H01L21/31053

摘要： In the CMP of films of semiconductor devices, pulsed measuring radiation is directed onto a surface to be polished of a rotating wafer. At this point, the pulse repetition rate of the pulsed measuring radiation is determined so that the pulse measuring radiation is directed only onto a specified portion of the surface of each semiconductor device. Thereby, reflection data can be obtained only from the specified portion of a film to be polished, allowing accurate measurements of the thickness of the specified portion of the film in the middle of polishing.

摘要翻译： 在半导体器件的CMP的CMP中，脉冲测量辐射被引导到旋转晶片抛光的表面上。 此时，脉冲测量辐射的脉冲重复率被确定为使得脉冲测量辐射仅指向每个半导体器件的表面的指定部分。 由此，只能从要被研磨的膜的指定部分获得反射数据，从而可以精确地测量抛光中间的膜的指定部分的厚度。

公开(公告)号：US06224464B1

公开(公告)日：2001-05-01

申请号：US08763342

申请日：1996-12-11

申请人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

发明人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

IPC分类号： B24B100

CPC分类号： C09G1/02 ,  H01L21/31053

摘要： According to the present invention, there is provided a polishing method having the steps of forming a film to be polished, having a depressed portion and a protruding portion on a surface of a substrate, and polishing the film to be polished by relatively moving the substrate and a polishing table, while pressing the substrate having the film to be polished, onto a polishing cloth of the polishing table and supplying a polishing solution containing polishing grains, between the film to be polished and the polishing cloth, wherein an organic compound having a molecular weight of 100 or more, and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) is added to the polishing solution. Further, there are provided a polishing solution in which polishing grains are dispersed into a dispersion medium, and a polishing agent containing an organic compound having a molecular weight of 100 or more and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) added to the polishing solution.

摘要翻译： 根据本发明，提供了一种抛光方法，其具有以下步骤：在基板的表面上形成具有凹陷部分和突出部分的待抛光膜，并且通过相对移动基板来抛光待抛光的膜 以及研磨台，在将要研磨的膜的基板按压到研磨台的抛光布上，并在待抛光的薄膜和抛光布之间提供含有抛光颗粒的抛光液，其中具有 分子量为100以上，并且含有至少一个选自COOM1的亲水基团（M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基 基团）和SO 3 M 2（M2表示当被羧基的氢原子取代时可以形成盐的原子或官能团）加入到抛光溶胶 。 此外，提供了将研磨粒分散在分散介质中的研磨液，以及含有分子量为100以上且含有至少一个亲水性基团的研磨剂，所述亲水性基团选自COOM1（ M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基）和SO 3 M 2（M 2表示当被取代时可以形成盐的原子或官能团 加入到抛光溶液中的羧基的氢原子）。

公开(公告)号：US5860847A

公开(公告)日：1999-01-19

申请号：US708948

申请日：1996-09-06

申请人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Toyomi Nishi ,  Seiji Katsuoka ,  Hiromi Yajima ,  Masako Kodera

发明人： Kunihiko Sakurai ,  Tetsuji Togawa ,  Toyomi Nishi ,  Seiji Katsuoka ,  Hiromi Yajima ,  Masako Kodera

IPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/04 ,  B24B49/16 ,  H01L21/66 ,  B24B49/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/04 ,  B24B49/16 ,  H01L22/26

摘要： A polishing apparatus has a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring disposed above the turntable for supporting a workpiece to be polished against the abrasive cloth under predetermined pressure. The turntable is rotatable by a first motor through a timing pulley connected to the first motor, and the top ring is rotatable by a second motor through a timing pulley connected to the second motor. A torque detector incorporated in the timing pulley connected to at least one of the first motor and the second motor detects an output torque produced by the at least one of the first motor and the second motor.

摘要翻译： 抛光装置具有安装在其上表面上的研磨布的转台和设置在转盘上方的顶环，用于在预定压力下将待抛光的工件支撑在磨料上。 转盘可以通过连接到第一马达的定时皮带由第一马达旋转，并且顶环可以通过连接到第二马达的定时皮带的第二马达转动。 并入到与第一电动机和第二电动机中的至少一个连接的正时轮中的转矩检测器检测由第一电动机和第二电动机中的至少一个产生的输出转矩。

公开(公告)号：US5616063A

公开(公告)日：1997-04-01

申请号：US309193

申请日：1994-09-20

申请人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

发明人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

IPC分类号： H01L21/302 ,  B08B1/04 ,  B24B27/00 ,  B24B37/04 ,  B24B37/34 ,  B24B51/00 ,  B24B55/12 ,  H01L21/00 ,  H01L21/677 ,  B24B49/00

CPC分类号： H01L21/67167 ,  B08B1/04 ,  B08B13/00 ,  B24B27/0023 ,  B24B37/04 ,  B24B37/345 ,  B24B51/00 ,  B24B55/12 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67161 ,  H01L21/67219 ,  H01L21/67745

摘要： A polishing apparatus is a cluster type of apparatus having a plurality of units which perform various operations. The polishing apparatus includes a universal transfer robot having at least one arm for transferring a workpiece, a plurality of units disposed around the universal transfer robot and including a loading unit for receiving the workpiece to be polished, at least one polishing unit for polishing the workpiece, at least one washing unit for washing the workpiece which has been polished and an unloading unit for receiving the cleaned workpiece. Discrete mechanisms respectively transfer a clean workpiece and a dirty workpiece amongst the units.

摘要翻译： 抛光装置是具有执行各种操作的多个单元的集群类型的装置。 抛光装置包括具有用于传送工件的至少一个臂的通用传送机器人，设置在通用传送机器人周围的多个单元，并且包括用于接收被抛光工件的装载单元，用于抛光工件的至少一个抛光单元 至少一个用于清洗已经被抛光的工件的洗涤单元和用于接收清洁的工件的卸载单元。 离散机构分别在单元之间传送清洁的工件和脏工件。

公开(公告)号：US09196501B2

公开(公告)日：2015-11-24

申请号：US13422969

申请日：2012-03-16

申请人： Masako Kodera ,  Yukiteru Matsui

发明人： Masako Kodera ,  Yukiteru Matsui

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/461 ,  H01L21/3105

CPC分类号： H01L21/67086 ,  H01L21/31055 ,  H01L21/67011

摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.

摘要翻译： 根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。 在使二氧化硅的状态下，使凹凸部的溶解率降低，使其处于与凹凸的凸部接触的区域的处理液的平衡状态，同时使凸部的溶解率大于凹凸部的凹部的溶解率 使具有不规则性的膜与处理液接触。

公开(公告)号：US08703004B2

公开(公告)日：2014-04-22

申请号：US13423018

申请日：2012-03-16

申请人： Yukiteru Matsui ,  Masako Kodera ,  Hiroshi Tomita ,  Gaku Minamihaba ,  Akifumi Gawase

发明人： Yukiteru Matsui ,  Masako Kodera ,  Hiroshi Tomita ,  Gaku Minamihaba ,  Akifumi Gawase

IPC分类号： C03C15/00

CPC分类号： H01L21/30625 ,  B24B37/044 ,  B24B37/24 ,  H01L21/67075 ,  H01L21/67219

摘要： According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

摘要翻译： 根据一个实施例，公开了用于化学平面化的方法。 该方法可以包括在具有不规则性的待处理膜上形成表面层。 表面层沿着不规则结合或吸附到待处理的膜上以抑制被处理膜的溶解。 该方法可以包括在待处理膜的处理溶液中平面化待处理膜，通过旋转待处理膜和加工体，同时待处理膜与处理体接触 通过表面层除去凹凸部的凸部的表面层，同时将表面层留在凹凸部的凹部上，使凸部的溶解度大于凹部的溶解度。

公开(公告)号：US20110294291A1

公开(公告)日：2011-12-01

申请号：US13035546

申请日：2011-02-25

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

IPC分类号： H01L21/768

CPC分类号： H01L21/02697 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883 ,  H01L27/228

摘要： According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

摘要翻译： 根据一个实施例，半导体器件包括设置在半导体衬底的表面区域中的开关元件，具有上表面和下表面的接触插塞以及设置在接触插塞的上表面上的功能元件。 接触插头的下表面连接到开关元件。 接触塞的上表面的最大粗糙度为0.2nm以下。

公开(公告)号：US20070205112A1

公开(公告)日：2007-09-06

申请号：US11797480

申请日：2007-05-03

申请人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

发明人： Masako Kodera ,  Yoshihiro Mochizuki ,  Akira Fukuda ,  Akira Kodera ,  Hirokuni Hiyama ,  Manabu Tsujimura ,  Kazuto Hirokawa ,  Akira Fukunaga

IPC分类号： B23H3/00

CPC分类号： B23H5/08 ,  B24B53/001 ,  B24B53/017 ,  C09G1/02 ,  C25F3/02 ,  C25F7/00 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/7684

摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

摘要翻译： 抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于 以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。 抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。 抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

公开(公告)号：US5597341A

公开(公告)日：1997-01-28

申请号：US451226

申请日：1995-05-26

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  B24B51/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metal is during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US08614510B2

公开(公告)日：2013-12-24

申请号：US12726604

申请日：2010-03-18

申请人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

发明人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76826 ,  H01L21/3105 ,  H01L21/76832 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得 金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽 在执行疏水处理之后通过电镀的金属布线的表面。