公开(公告)号：US11682572B2

公开(公告)日：2023-06-20

申请号：US17398177

申请日：2021-08-10

Applicant: ASM IP Holding B.V.

Inventor： Adriaan Garssen

IPC: H01L21/677

CPC classification number: H01L21/67769

Abstract: A storage device for use with at least one batch furnace for batch treatment of wafers supported in a wafer boat is disclosed. The storage device comprises a cassette storage carousel for storing a plurality of wafer cassettes on rotatable platform stages. A carousel housing bounds a mini-environment chamber in which the platform stages are accommodated. A gas recirculation circuit of the storage device subsequently comprises a gas inlet channel, a gas inlet filter, the mini-environment chamber, a plurality of gas outlet openings in a bottom wall of the carousel housing, a plenum housing bounding a plenum chamber, a plenum chamber outlet, a gas circulation pump connecting the plenum chamber outlet to an inlet end of the gas inlet duct.

公开(公告)号：US10665452B2

公开(公告)日：2020-05-26

申请号：US16018692

申请日：2018-06-26

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  David de Roest ,  Jacob Woodruff ,  Michael Eugene Givens ,  Jan Willem Maes ,  Timothee Blanquart

IPC: H01L21/02 ,  H01L21/265 ,  H01L29/36 ,  H01L29/417 ,  H01L21/225 ,  H01L29/08

Abstract: A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.

公开(公告)号：US10561975B2

公开(公告)日：2020-02-18

申请号：US15489453

申请日：2017-04-17

Applicant: ASM IP Holding B.V.

Inventor： John Kevin Shugrue

IPC: B01D53/04 ,  F16K1/32 ,  C23C16/455 ,  B01D53/047 ,  F04B39/10 ,  F16K1/38

Abstract: Variable conductance gas distribution systems, reactors and systems including the variable conductance gas distribution systems, and methods of using the variable conductance gas distribution systems, reactors, and systems are disclosed. The variable conductance gas distribution systems allow rapid manipulation of gas-flow conductance through the gas distribution system.

公开(公告)号：US10529563B2

公开(公告)日：2020-01-07

申请号：US15917262

申请日：2018-03-09

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Chiyu Zhu

IPC: H01L21/02 ,  H01L21/28 ,  C23C16/40 ,  C23C16/455

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

公开(公告)号：US10519541B2

公开(公告)日：2019-12-31

申请号：US16029130

申请日：2018-07-06

Applicant: ASM IP HOLDING B.V.

Inventor： John Tolle ,  Eric Hill

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/02 ,  C23C14/50 ,  C23C16/46 ,  H05B6/10 ,  C23C14/02

Abstract: A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

公开(公告)号：US09885112B2

公开(公告)日：2018-02-06

申请号：US14557774

申请日：2014-12-02

Applicant: ASM IP Holding B.V.

Inventor： Naoto Tsuji ,  Kazuo Sato ,  Takayuki Yamagishi

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/4412 ,  C23C16/4408 ,  C23C16/45544 ,  C23C16/45565 ,  H01J37/3244

Abstract: A film forming apparatus includes a susceptor, and a shower head provided above the susceptor and having a first passage and a second passage independent of the first passage formed therein, wherein the first passage is formed through the shower head by being provided with a first cavity surrounded by a first upper wall and a first lower wall, a first thin hole formed in the first upper wall, and a plurality of second thin holes formed in the first lower wall, the height of the first upper wall in the vertical direction is reduced with increase in distance from the first thin hole, and the second passage is formed in the same manner as the first passage.

公开(公告)号：US09399819B2

公开(公告)日：2016-07-26

申请号：US13751282

申请日：2013-01-28

Applicant: ASM IP Holding B.V.

Inventor： Hyun-Kyu Cho

IPC: C23C16/52 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/513 ,  C23C16/45536 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32899

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reactors; a plurality of gas supply units connected to the plurality of reactors; and a plurality of plasma supply units connected to the plurality of reactors. Each of the plasma supply units includes: a plasma power supplier; a plurality of diodes connected to the plasma power supplier; and a reverse voltage driver connected to the plurality of diodes through respectively corresponding switches.

Abstract translation: 根据本发明的示例性实施例的沉积设备包括多个反应器; 连接到所述多个反应器的多个气体供给单元; 以及与多个反应器连接的多个等离子体供给单元。 每个等离子体供应单元包括：等离子体供电器; 连接到等离子体电源的多个二极管; 以及通过分别对应的开关连接到所述多个二极管的反向电压驱动器。

公开(公告)号：US09111749B2

公开(公告)日：2015-08-18

申请号：US14300986

申请日：2014-06-10

Applicant: ASM IP HOLDING B.V.

Inventor： Eric Shero ,  Suvi Haukka

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/321 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L21/02211 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76841 ,  H01L29/4966 ,  H01L29/517 ,  Y10S438/932

Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.

Abstract translation: 通过使膜与包含硅烷或硼烷的处理剂接触，可以减少或防止氧对一些金属膜的负面影响。 在一些实施例中，NMOS栅叠层中的一个或多个膜在沉积期间或之后与包含硅烷或硼烷的处理剂接触。

公开(公告)号：US09021985B2

公开(公告)日：2015-05-05

申请号：US13612538

申请日：2012-09-12

Applicant: Fred Alokozai ,  Robert Brennan Milligan

Inventor： Fred Alokozai ,  Robert Brennan Milligan

IPC: C23C16/505 ,  C23C16/452 ,  C23C16/455 ,  C23C16/507 ,  H01J37/32

CPC classification number: C23C16/505 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  Y10T137/6851

Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

Abstract translation: 公开了与用于处理半导体衬底的硬件和方法相关的实施例。 一个示例性膜沉积反应器包括处理气体分配器，其包括等离子体气体进料入口，该等离子体气体进料入口定位成将等离子体气体供应到膜沉积反应器内的等离子体产生区域;以及前体气体进料入口，其位于将等离子体产生 地区; 绝缘限制容器，其被配置为将所述膜沉积反应器内的等离子体产生区域保持在较低的压力;以及电感耦合等离子体（ICP）线圈，其布置在所述绝缘限制容器的侧壁的一部分周围并且被定位成使得所述侧壁将 来自ICP线圈的等离子体产生区域; 以及基座，被配置为支撑半导体衬底，使得半导体衬底的膜沉积表面暴露于形成在处理气体分配器下游的反应区域。

公开(公告)号：US10685834B2

公开(公告)日：2020-06-16

申请号：US15985261

申请日：2018-05-21

Applicant: ASM IP Holding B.V.

Inventor： Nupur Bhargava ,  Joe Margetis ,  John Tolle

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/02 ,  C23C16/14 ,  C23C16/28 ,  C23C16/455 ,  C23C16/24

Abstract: A method for forming a forming a silicon germanium tin (SiGeSn) layer is disclosed. The method may include, providing a substrate within a reaction chamber, exposing the substrate to a pre-deposition precursor pulse, which comprises tin tetrachloride (SnCl4), exposing the substrate to a deposition precursor gas mixture comprising a hydrogenated silicon source, germane (GeH4), and tin tetrachloride (SnCl4), and depositing the silicon germanium tin (SiGeSn) layer over a surface of the substrate. Semiconductor device structures including a silicon germanium tin (SiGeSn) layer formed by the methods of the disclosure are also provided.