摘要:
Disclosed are a system, a method, and article of manufacture to configure information storage and retrieval systems. A configuration loader receives configuration commands from a configuration loader user interface. Upon receipt of configuration commands, the configuration loader transfers storage controller configurations from information storage and retrieval system configuration sources to target information storage and retrieval systems. Threading technology is used to apply a thread manager for managing threads to accomplish the configuration transfers. Multiple physical and/or logical configurations may be transferred simultaneously using the threading technology.
摘要:
The present invention provides a method of integrated semiconductor devices such that different types of devices are formed upon a specific crystallographic orientation of a hybrid substrate. In accordance with the present invention, junction capacitance of one of the devices is improved in the present invention by forming the source/drain diffusion regions of the device in an epitiaxial semiconductor material such that they are situated on a buried insulating layer that extends partially underneath the body of the second semiconductor device. The second semiconductor device, together with the first semiconductor device, is both located atop the buried insulating layer. Unlike the first semiconductor device in which the body thereof is floating, the second semiconductor device is not floating. Rather, it is in contact with an underlying first semiconducting layer.
摘要:
A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film. In an alternative embodiment, a positive resist is used by degrading and removing photo-sensitive Lewis acid oligomers using selective exposure lithography techniques and, subsequently, deblocking the Lewis base and chain extending the remaining oligomers with the deblocked Lewis base at the unexposed regions.
摘要:
The disclosure involves wireless electric power sharing between vehicles. A first vehicle sends a charging request, wherein the first vehicle is at least partially powered by a first on-board rechargeable electricity storage. The first vehicle receives a response to the charging request from a second vehicle which is at least partially powered by a second on-board rechargeable electricity storage, and a communication channel is established between the first and second vehicles. The first on-board rechargeable electricity storage is charged using energy stored in the second on-board rechargeable electricity storage and wirelessly transferred from the second vehicle to the first vehicle. The charging is controlled with information exchanged between the first and second vehicles over the communication channel.
摘要:
Major branch instructions are provided that enable execution of a computer program to branch from one segment of code to another segment of code. These instructions also create a new stream of processing at the other segment of code enabling execution of the other segment of code to be performed in parallel with the segment of code from which the branch was taken. In one example, the other stream of processing starts a transaction for processing instructions of the other stream of processing.
摘要:
A polished glass disk is prepared for a magnetically recordable coating by texturing the surfaces with a highly abrasive material being abrasively engaged with the surfaces as the disk is rotated, thereby creating a relatively coarse texture with the abrasions concentric with the axis of rotation of the disk. Thereafter, the roughness of the texturing is reduced by abrading the surface of the disk with a polishing pad and an etchant slurry of colloidal silica. The etchant component has the property of attacking or softening the glass disk during the fine polishing with the colloidal silica slurry. As both the texturing step and the fine polishing step deposit a plurality of concentric abrasions on a glass disk, these abrasions aid in retaining the magnetically recordable coating deposited thereon to complete a magnetically recordable disk for use as a data storage member.
摘要:
According to embodiments of the present invention, methods, systems and computer-readable media are presented for scanning a plurality of storage regions within memory for a specified quantity of results, wherein each storage region is associated with an interval including first and second interval values indicating a value range for values within that storage region. The techniques comprise sorting the first interval values into an order, wherein the order of the first interval values determines a scanning order for the plurality of storage regions, determining a result value, wherein the result value is an upper bound, a lower bound, or is outside of the specified quantity of results, and examining the sorted first interval values and scanning corresponding individual storage regions in response to a comparison of the determined result value with the first interval value of that storage region. In some embodiments, scanning exits upon establishing that the specified quantity of results has been achieved and that a first interval value in a list of sorted first interval values is greater than the determined result value.
摘要:
A 4D device comprises a 2D multi-core logic and a 3D memory stack connected through the memory stack sidewall using a fine pitch T&J connection. The 3D memory in the stack is thinned from the original wafer thickness to no remaining Si. A tongue and groove device at the memory wafer top and bottom surfaces allows an accurate stack alignment. The memory stack also has micro-channels on the backside to allow fluid cooling. The memory stack is further diced at the fixed clock-cycle distance and is flipped on its side and re-assembled on to a template into a pseudo-wafer format. The top side wall of the assembly is polished and built with BEOL to fan-out and use the T&J fine pitch connection to join to the 2D logic wafer. The other side of the memory stack is polished, fanned-out, and bumped with C4 solder. The invention also comprises a process for manufacturing the device. In another aspect, the invention comprises a 4D process and device for over 50× greater than 2D memory density per die and an ultra high density memory.
摘要:
A computer data handling method, system and apparatus are disclosed. A data item or information object are received in one protocol. Based on data contents, a protocol transfer module (engine) optimizes information presentation by transferring/converting the data item from the one protocol to a form of the data item in a different protocol. The resulting form (i.e. the data item/information object in the different protocol) optimally presents the data contents to an end-user. The end user reads the converted data item in the different protocol. The invention system enables the user to reply or otherwise further handle the data item in the initial protocol as desired. The initial protocol may be email and the resulting form of the data item may be one or more feed entries in machine-readable feeds specified by the user. The invention optimization effectively reduces email In-box clutter and streamlines reading in feed readers.
摘要:
The present invention relates to a process for preparing a robust crack-absorbing integrated circuit chip comprising a crack trapping structure containing two metal plates and a via-bar structure sandwiched between said plates.