公开(公告)号：US20230369009A1

公开(公告)日：2023-11-16

申请号：US17742608

申请日：2022-05-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

Inventor： Kai-Yun Yang ,  Chen Chi Wu ,  Ching I Li ,  Min-Chang Ching ,  Hung-Ta Huang

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01L21/26513

Abstract: A plasma flood gun includes a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time. The first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma. A filament resistance meter measures a first filament resistance of the filament, in-situ, during generation of the first plasma. A filament current source adjusts, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.

公开(公告)号：US11810746B2

公开(公告)日：2023-11-07

申请号：US17473096

申请日：2021-09-13

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Alexander S. Perel ,  Jay T. Scheuer ,  Bon-Woong Koo ,  Robert C. Lindberg ,  Peter F. Kurunczi ,  Graham Wright

IPC: H01J27/02 ,  H01J37/08

CPC classification number: H01J27/024 ,  H01J37/08 ,  H01J2237/0455 ,  H01J2237/061 ,  H01J2237/327

Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

公开(公告)号：US20230352264A1

公开(公告)日：2023-11-02

申请号：US18220549

申请日：2023-07-11

Applicant: Leonid DORF ,  Travis KOH ,  Olivier LUERE ,  Olivier JOUBERT ,  Philip A. KRAUS ,  Rajinder DHINDSA ,  James ROGERS

Inventor： Leonid DORF ,  Travis KOH ,  Olivier LUERE ,  Olivier JOUBERT ,  Philip A. KRAUS ,  Rajinder DHINDSA ,  James ROGERS

IPC: H01J37/08 ,  H01J37/248 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/248 ,  H01J37/32715 ,  H01J37/32706 ,  H01J37/32577

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a negative jump voltage to an electrode of a process chamber to set a wafer voltage for a wafer, modulating an amplitude of the wafer voltage to produce a train of groups of pulse bursts with different amplitudes, and repeating the modulating of the amplitude of the wafer voltage to repeat the train of the groups of pulse bursts to create an ion energy distribution function having more than one energy peak. In some embodiments, the negative jump voltage can include a single-cycle voltage waveform with a voltage ramp during an ion-current phase, in which the voltage ramp can be positive or negative and a duration of the ion-current phase can comprise more or less than fifty percent of a period of the waveform.

公开(公告)号：US20230260738A1

公开(公告)日：2023-08-17

申请号：US18306381

申请日：2023-04-25

Applicant: Varian Medical Systems, Inc.

Inventor： Amir SHOJAEI ,  Philip ADAMSON ,  Flavio POEHLMANN-MARTINS

IPC: H01J37/08 ,  H01J37/16

CPC classification number: H01J37/08 ,  H01J37/16 ,  H01J2237/022 ,  H01J2237/166 ,  H01J2237/186 ,  H01J2237/1825

Abstract: An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

公开(公告)号：US11728140B1

公开(公告)日：2023-08-15

申请号：US17588999

申请日：2022-01-31

Applicant: Axcelis Technologies, Inc.

Inventor： Neil J. Bassom ,  Joshua Abeshaus ,  David Sporleder ,  Neil Colvin ,  Joseph Valinski ,  Michael Cristoforo ,  Vladimir Romanov ,  Pradeepa Kowrikan Subrahmnya

IPC: H01J37/26 ,  H01J37/32 ,  H01J37/08

CPC classification number: H01J37/32412 ,  H01J37/08

Abstract: An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.

公开(公告)号：US11728124B2

公开(公告)日：2023-08-15

申请号：US17377639

申请日：2021-07-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Travis Koh ,  Olivier Luere ,  Olivier Joubert ,  Philip A. Kraus ,  Rajinder Dhindsa ,  James Rogers

IPC: H01J37/08 ,  H01J37/248 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/248 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

公开(公告)号：US11664192B2

公开(公告)日：2023-05-30

申请号：US17403223

申请日：2021-08-16

Applicant: Applied Materials, Inc.

Inventor： Shreyansh P. Patel ,  Graham Wright ,  Daniel Alvarado ,  Daniel R. Tieger ,  Brian S. Gori ,  William R. Bogiages, Jr. ,  Benjamin Oswald ,  Craig R. Chaney

IPC: H01J37/302 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/302 ,  H01J37/08 ,  H01J37/3171

Abstract: An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.

公开(公告)号：US11664183B2

公开(公告)日：2023-05-30

申请号：US17308732

申请日：2021-05-05

Applicant: Applied Materials, Inc.

Inventor： Graham Wright ,  Daniel Alvarado ,  Eric Donald Wilson ,  Robert Lindberg

IPC: H01J37/08 ,  H01J27/08 ,  H01J27/02 ,  H01J37/30

CPC classification number: H01J27/08 ,  H01J27/022 ,  H01J37/08 ,  H01J37/3002

Abstract: A system and method for extending the life of a cathode and repeller in an IHC ion source is disclosed. The system monitors the health of the cathode by operating using a known set of parameters and measuring the bias power used to generate the desired extracted beam current or the desired current from the arc voltage power supply. Based on the measured bias power, the system may determine whether the cathode is becoming too thin, and may take a corrective action. This corrective action may be to alert the operator; to operate the IHC ion source using a predetermined set of parameters; or to change the dilution used within the IHC source. By performing these actions, the life of the cathode may be more than doubled.

公开(公告)号：US20190189402A1

公开(公告)日：2019-06-20

申请号：US16192416

申请日：2018-11-15

Applicant: ENTEGRIS, INC.

Inventor： Sharad N. YEDAVE ,  Ying TANG ,  Joseph R. DESPRES ,  Joseph D. SWEENEY

IPC: H01J37/32 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/32449 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/31701

Abstract: A gas supply assembly is described for delivery of gas to a plasma flood gun which includes an inert gas and a fluorine-containing gas, wherein the assembly is configured to deliver a volume of the fluorine-containing gas to the flood gun that is not greater than 10% of a total volume of the fluorine-containing and inert gasses. The fluorine-containing gas can generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun. In combination with the gas amounts, the assembly and methods can use gas flow rates to optimize the cleaning effect and reduce filament material loss from the plasma flood gun during use.

公开(公告)号：US20190157036A1

公开(公告)日：2019-05-23

申请号：US16257786

申请日：2019-01-25

Applicant: Massachusetts Institute of Technology

Inventor： Paulo C. Lozano ,  Steven Mark Arestie

IPC: H01J37/08 ,  B01L3/00 ,  C25F3/14 ,  H01J49/04 ,  H01J1/05 ,  H01J9/02

CPC classification number: H01J37/08 ,  B01L3/502715 ,  C25F3/14 ,  H01J1/05 ,  H01J9/02 ,  H01J49/0445 ,  H01J2237/0802 ,  H01J2237/317

Abstract: An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.