公开(公告)号：US09385264B2

公开(公告)日：2016-07-05

申请号：US14409031

申请日：2013-06-28

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Kamal Asadi ,  Dagobert Michael De Leeuw ,  Johannes Franciscus Maria Cillessen ,  Wilhelmus Cornelis Keur ,  Frank Verbakel ,  Patrick John Baesjou ,  Cornelis Eustatius Timmering

IPC: H01L31/0312 ,  H01L33/00 ,  H01L33/36 ,  H01L33/28 ,  C09K11/64 ,  H05B33/14 ,  H01L33/50

CPC classification number: H01L33/145 ,  C09K11/643 ,  H01L33/0037 ,  H01L33/0087 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/16 ,  H01L33/28 ,  H01L33/285 ,  H01L33/36 ,  H01L33/502 ,  H01L2933/0016 ,  H05B33/14

Abstract: The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 0

Abstract translation: 本发明提供了一种发光半导体器件，其包括基于锌的氧化镁基层作为有源层，其中所述锌氧化镁基层包含具有标称组成Zn-xMg x O和1-350ppm Al的掺铝的锌氧化镁层，其中 x在0

公开(公告)号：US20140235014A1

公开(公告)日：2014-08-21

申请号：US14133177

申请日：2013-12-18

Applicant: Commissariat à l'énergie atomique et aux énergies alternatives

Inventor： Ivan-Christophe Robin

IPC: H01L21/02

CPC classification number: H01L21/02565 ,  H01L29/7869 ,  H01L33/0037 ,  H01L33/0083 ,  H01L33/28

Abstract: A method for manufacturing a structure comprising a substrate made of at least one n-type semiconducting metal oxide is disclosed. In one aspect, the method comprises providing a substrate made of at least one n-type semiconducting metal oxide selected from the group consisting of: ZnO, CdO, MgO, ZnMgO, and ZnCdO, wherein the doping rate of which is less than or equal to 1018/cm3. The method further comprises depositing a layer which is 1 to 10 nm thick, made of an electrically insulating metal or metalloid oxide, having a dielectric constant which is at least equal to 4, on the first main surface of the substrate. The method further comprises annealing of the electrically insulating metal or metalloid oxide layer in an oxygen atmosphere. The method further comprises depositing at least one layer made of an electrically conductive material on the electrically insulating metal or metalloid oxide layer.

Abstract translation: 公开了一种用于制造包括由至少一种n型半导体金属氧化物制成的衬底的结构的方法。 一方面，该方法包括提供由至少一种选自ZnO，CdO，MgO，ZnMgO和ZnCdO的n型半导体金属氧化物制成的衬底，其中掺杂速率小于或等于 至1018 / cm3。 该方法还包括在衬底的第一主表面上沉积1至10nm厚的由电绝缘金属或类金属氧化物制成的层，其介电常数至少等于4。 该方法还包括在氧气氛中退火电绝缘金属或准金属氧化物层。 该方法还包括在电绝缘金属或准金属氧化物层上沉积由导电材料制成的至少一层。

公开(公告)号：US20070263690A1

公开(公告)日：2007-11-15

申请号：US11770838

申请日：2007-06-29

Applicant: Kevin Homewood ,  Russell Gwilliam ,  Guosheng Shao

Inventor： Kevin Homewood ,  Russell Gwilliam ,  Guosheng Shao

IPC: H01S5/30

CPC classification number: H01L33/34 ,  H01L33/0008 ,  H01L33/0037 ,  H01L33/025 ,  H01S5/2063

Abstract: An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains a array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.

Abstract translation: 由结晶材料制造的电子或光电子器件，其中所述结晶材料的带隙特征的参数已经通过在所述结晶材料的晶格结构中引入原子尺度的失真而局部地修饰，并且电子和/或光电参数 所述器件取决于所述带隙的修改，例如包括由p型层（11）形成的结（10）和n型层（12）的辐射发射光电子半导体器件，两者都由间接形成 带隙半导体材料。 p型层（11）包含位错环的阵列，其产生应变场以在空间上限制并促进电荷载流子的辐射复合。

公开(公告)号：US07173275B2

公开(公告)日：2007-02-06

申请号：US11113587

申请日：2005-04-25

Applicant: Michael J. Estes ,  Blake J. Eliasson

Inventor： Michael J. Estes ,  Blake J. Eliasson

IPC: H01L29/06

CPC classification number: H01L29/7606 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L27/1446 ,  H01L29/7311 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L45/00

Abstract: A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.

Abstract translation: 热电子晶体管包括发射极，基极，集电极和第一隧道结构，其布置并用作发射极和基极之间的电子传输。 第一隧道结构包括至少第一非晶绝缘层和不同的第二绝缘层，使得电子的传输包括通过隧道传输。 晶体管还包括设置在基极和集电极之间的第二隧道结构。 第二隧道结构用作通过弹道传输使得电子部分在集电极处收集的基极和集电极之间的至少一部分前述电子的传输。 还公开了一种用于在薄膜晶体管的界面处减少电子反射的相关方法。

公开(公告)号：US5616937A

公开(公告)日：1997-04-01

申请号：US737706

申请日：1991-07-30

Applicant: Masahiko Kitagawa ,  Yoshitaka Tomomura

Inventor： Masahiko Kitagawa ,  Yoshitaka Tomomura

IPC: H01L21/203 ,  H01L21/36 ,  H01L33/00 ,  H01L33/14 ,  H01L33/28 ,  H01L33/42 ,  H01L33/44 ,  H01S5/327 ,  H05B33/12 ,  H05B33/14

CPC classification number: H01L33/44 ,  H01L33/0037 ,  H01L33/28 ,  H01L33/285 ,  H01S5/327 ,  H05B33/12 ,  H05B33/145 ,  H01L33/14

Abstract: A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a current injection layer, wherein the substrate and the layers are made of at least one kind of II-VI group compound semiconductor.

Abstract translation: 公开了一种化合物半导体发光装置，其包括半导体衬底和设置在衬底上的多层结构，所述多层结构包括至少一个导电层，发光层和电流注入层，其中衬底和 层由至少一种II-VI族化合物半导体制成。

公开(公告)号：US5273933A

公开(公告)日：1993-12-28

申请号：US917321

申请日：1992-07-23

Applicant: Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

Inventor： Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/34 ,  H01L21/20

CPC classification number: H01L33/34 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02477 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0037 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0087 ,  Y10S438/925

Abstract: In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH.sub.3).sub.3 SiN.sub.3 is used as raw material for nitrogen. The films are grown at a relatively low temperature and the amount of nitrogen doped in the films is increased.

Abstract translation: 在制造短波长发光元件的过程中，使用MOCVD法在由SiC制成的衬底上形成n型和p型GaInAlN膜。 （CH3）3SiN3用作氮原料。 膜在相对低的温度下生长，并且膜中掺杂的氮的量增加。

公开(公告)号：US4855249A

公开(公告)日：1989-08-08

申请号：US272081

申请日：1988-03-16

Applicant: Isamu Akasaki ,  Nobuhiko Sawaki

Inventor： Isamu Akasaki ,  Nobuhiko Sawaki

IPC: C30B29/40 ,  C30B25/02 ,  C30B29/38 ,  H01L21/20 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32

CPC classification number: H01L33/007 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/0037 ,  Y10S117/913 ,  Y10S148/025 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/11 ,  Y10S148/113 ,  Y10S438/967

Abstract: In organometallic vapor phase hetero-epitaxial processes for growing Al.sub.x Ga.sub.1-x N films on a sapphire substrate, the substrate is subjected to a preheat treatment of brief duration, such as less than 2 minutes, at relatively low temperatures in an atmosphere comprising Al-containing organometallic compound, NH.sub.3 and H.sub.2 gases, prior to the hetero epitaxial growth of Al.sub.x Ga.sub.1-x N films. Thus, single crystalline Al.sub.x Ga.sub.1-x N layers of high uniformity and high quality having smooth, flat surfaces are provided. Multi-layers grown according to the process of the invention are free from cracks and have preferable UV or blue light emission properties.

Abstract translation: 在用于在蓝宝石衬底上生长Al x Ga 1-x N膜的有机金属气相异质外延工艺中，在包含含Al有机金属的气氛中，在较低温度下对衬底进行短暂持续时间，例如小于2分钟的预热处理 化合物，NH3和H2I气体，在AlxGal-xN膜的异质外延生长之前。 因此，提供了具有光滑平坦表面的高均匀性和高质量的单晶Al x Ga 1-x N层。 根据本发明的方法生长的多层没有裂纹并且具有优选的UV或蓝色发光性质。

公开(公告)号：US4757364A

公开(公告)日：1988-07-12

申请号：US795161

申请日：1985-11-05

Applicant: Akira Miura ,  Koichi Mizushima ,  Keijiro Hirahara ,  Nobuhiro Gemma ,  Taiji Furuno ,  Hiroyuki Sasabe

Inventor： Akira Miura ,  Koichi Mizushima ,  Keijiro Hirahara ,  Nobuhiro Gemma ,  Taiji Furuno ,  Hiroyuki Sasabe

IPC: H01L51/05 ,  H01L21/368 ,  H01L29/94 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01L51/50 ,  H05B33/12 ,  H05B33/22 ,  H01L29/78 ,  H01L33/00

CPC classification number: H01L29/94 ,  H01L33/0037 ,  H01L51/5012 ,  Y10S930/29

Abstract: A light emitting element formed of a metal-insulator-semiconductor junction, the improvement wherein the insulator is a Langmuir-Blodgett film of an organic substance containing at least one of a synthetic protein and a natural protein. According to the element of this invention, stability of dynamic characteristics, luminescence efficiency and long-term stability can be significantly improved.

Abstract translation: 由金属 - 绝缘体 - 半导体结形成的发光元件，其中绝缘体是含有合成蛋白质和天然蛋白质中的至少一种的有机物质的Langmuir-Blodgett膜。 根据本发明的要素，可以显着提高动态特性的稳定性，发光效率和长期稳定性。

公开(公告)号：US3424934A

公开(公告)日：1969-01-28

申请号：US3424934D

申请日：1966-08-10

Applicant: BELL TELEPHONE LABOR INC

Inventor： BERGLUND CARL N

IPC: H01L33/00 ,  H01J63/04

CPC classification number: H01L33/0004 ,  H01L33/0037 ,  H01L2224/4918

公开(公告)号：US2856553A

公开(公告)日：1958-10-14

申请号：US58038256

申请日：1956-04-24

Applicant: SYLVANIA ELECTRIC PROD

Inventor： HENISCH HEINZ K

IPC: H01L33/00

CPC classification number: H01L33/0037 ,  B82Y20/00