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    LASER DEVICE
    11.
    发明申请
    LASER DEVICE 有权
    激光装置

    公开(公告)号：US20140198815A1

    公开(公告)日：2014-07-17

    申请号：US14123686

    申请日：2012-07-02

    Applicant: DANMARKS TEKNISKE UNIVERSITET

    Inventor： Il-Sug Chung

    IPC: H01S5/183 ,  H01S5/187

    CPC classification number: H01S5/187 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/1032 ,  H01S5/1228 ,  H01S5/1234 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/1838 ,  H01S5/18386

    Abstract: The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material in a silicon layer in a semiconductor structure or wafer structure. A waveguide for receiving light from the region of the mirrors is formed within or to be connected to the region of the mirrors, and functions as an output coupler for the VCL. Thereby, vertical lasing modes are coupled to lateral in-plane modes of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.

    Abstract translation: 本发明提供一种用于硅平台上的光电路的光源。 通过在半导体结构或晶片结构中的硅层中形成包括活性材料的光栅区域，通过布置在第一反射镜结构和第二反射镜结构之间的增益区域两者形成垂直激光腔。 用于从反射镜区域接收光的波导形成在反射镜的区域内或连接到反射镜的区域，并且用作VCL的输出耦合器。 因此，垂直激光模式耦合到在硅层中形成的面内波导的横向面内模式，并且可以提供光。 在硅中的SOI或CMOS衬底上的光子电路。

    DISTRIBUTED FEEDBACK SURFACE EMITTING LASER
    12.
    发明申请
    DISTRIBUTED FEEDBACK SURFACE EMITTING LASER 有权
    分布式反馈表面发射激光

    公开(公告)号：US20140133506A1

    公开(公告)日：2014-05-15

    申请号：US13652136

    申请日：2012-10-15

    Applicant: Palo Alto Research Center Incorporated

    Inventor： Thomas Wunderer

    IPC: H01S5/187

    CPC classification number: H01S5/1228 ,  B82Y20/00 ,  H01S3/09408 ,  H01S5/04 ,  H01S5/041 ,  H01S5/124 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18383 ,  H01S5/34333

    Abstract: A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λlase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λlase.

    Abstract translation: 半导体表面发射激光器（SEL）包括由间隔层隔开的包括量子阱结构的有源区。 量子阱结构被配置为在激光波长λlase处为SEL提供光学增益。 每个量子阱结构和相邻的间隔层被配置成形成分布式布拉格反射器（DBR）的光学对。 包括多个DBR光对的有源区被配置为以λlase为SEL提供光学反馈。

    Beat signal generating device for use in a Terahertz system, Terahertz system and use of a beat signal generating device
    14.
    发明授权
    Beat signal generating device for use in a Terahertz system, Terahertz system and use of a beat signal generating device 有权
    节拍信号发生装置用于太赫兹系统，太赫兹系统和使用节拍信号发生装置

    公开(公告)号：US08463087B2

    公开(公告)日：2013-06-11

    申请号：US13081135

    申请日：2011-04-06

    Applicant: Bernd Sartorius

    Inventor： Bernd Sartorius

    IPC: G02B6/12

    CPC classification number: H01S5/0623 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/1092 ,  H01S5/1228 ,  H01S2302/02

    Abstract: A beat signal generating device including first and second monomode lasers for generating radiation of a first and second wavelengths respectively; a first and a second output port; a phase modulating unit for modifying both the phase of radiation generated by both the first laser and second laser, wherein radiation generated by the first laser is transmitted through the second laser and superposed with the radiation generated by the second laser at the second output port, and the radiation generated by the second laser is transmitted through the first laser and superposed with the radiation generated by the first laser at the first output port, such that a first beat signal will be emitted at the first output port and a second beat signal will be emitted at the second output port, wherein the phase between the beat signals can be adjusted by means of the phase modulating unit.

    Abstract translation: 一种拍子信号产生装置，包括分别用于产生第一和第二波长辐射的第一和第二单模激光器; 第一和第二输出端口; 相位调制单元，用于修改由第一激光器和第二激光器产生的辐射相位，其中由第一激光器产生的辐射透射通过第二激光器并与由第二激光器在第二输出端口产生的辐射叠加， 并且由第二激光器产生的辐射通过第一激光器传输并与第一输出端口处的由第一激光器产生的辐射重叠，使得第一拍频信号将在第一输出端口处被发射，并且第二拍频信号将 在第二输出端口处发射，其中可以通过相位调制单元调节拍频信号之间的相位。

    Methods and apparatus for single-mode selection in quantum cascade lasers
    16.
    发明授权
    Methods and apparatus for single-mode selection in quantum cascade lasers 有权
    量子级联激光器中单模选择的方法和装置

    公开(公告)号：US08351481B2

    公开(公告)日：2013-01-08

    申请号：US13126576

    申请日：2009-11-05

    Applicant: Federico Capasso ,  Benjamin G. Lee ,  Christian Pflugl ,  Laurent Diehl ,  Mikhail A. Belkin

    Inventor： Federico Capasso ,  Benjamin G. Lee ,  Christian Pflugl ,  Laurent Diehl ,  Mikhail A. Belkin

    IPC: H01S3/08

    CPC classification number: H01S5/1228 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0287 ,  H01S5/0654 ,  H01S5/1231 ,  H01S5/305 ,  H01S5/3211 ,  H01S5/3401

    Abstract: Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top of the active region to introduce a sufficiently large loss difference between the two modes. The lossy layer is doped to a level sufficient to induce considerable free-carrier absorption losses for one of the two modes while allowing sufficient gain for the other of the two modes. In alternative implementations, the highly-doped layer may be replaced by other low-dimensional structures such as quantum wells, quantum wires, and quantum dots with significant engineered intraband absorption to selectively increase the free-carrier absorption losses for one of multiple possible modes so as to facilitate single-mode operation.

    Abstract translation: 用于改进量子级联激光器中单模选择的方法和装置。 在一个示例中，分布式反馈光栅包括折射率耦合和损耗耦合组件。 损耗耦合部件有助于通过在有源区域的顶部周期性地引入有损耗的半导体材料的薄层来在两种模式之间引入足够大的损耗差异，从两种可能的发射模式中选择一种模式。 有损层被掺杂到足以对两种模式之一引起相当大的自由载流子吸收损耗的水平，同时为两种模式中的另一种模式提供足够的增益。 在替代实施方案中，高掺杂层可以被诸如量子阱，量子线和量子点之类的其它低维度结构代替，具有显着的工程化内部吸收，以选择性地增加多种可能模式之一的自由载流子吸收损耗， 以方便单模操作。

    Gain-coupled distributed feedback semiconductor laser including first-order and second-order gratings
    17.
    发明授权
    Gain-coupled distributed feedback semiconductor laser including first-order and second-order gratings 有权
    增益耦合分布反馈半导体激光器，包括一阶和二阶光栅

    公开(公告)号：US08121170B2

    公开(公告)日：2012-02-21

    申请号：US12119586

    申请日：2008-05-13

    Applicant: Toshihiko Makino

    Inventor： Toshihiko Makino

    IPC: H01S5/00 ,  H01S3/08

    CPC classification number: H01S5/1228 ,  B82Y20/00 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1231 ,  H01S5/22 ,  H01S5/2275 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/3434

    Abstract: A gain-coupled distributed feedback (DFB) semiconductor laser includes a grating formed by grooves through at least a part of an active region of a laser cavity. The DFB laser may be configured with a substantially pure gain-coupled grating and may be configured to provide facet power asymmetry. The grating may include at least a first-order grating section and a second-order grating section. A lasing wavelength may be obtained at the Bragg wavelength of the second-order grating section by substantially eliminating index coupling in the grating. The first-order grating section may act as a reflector for the lasing wavelength, thereby producing asymmetric power distribution in the laser cavity.

    Abstract translation: 增益耦合分布反馈（DFB）半导体激光器包括由通过激光腔的有源区域的至少一部分的凹槽形成的光栅。 DFB激光器可以配置有基本上纯的增益耦合光栅，并且可以被配置为提供小平面功率不对称性。 光栅可以包括至少一级光栅部分和二阶光栅部分。 通过基本上消除光栅中的折射率耦合，可以在二阶光栅部分的布拉格波长处获得激光波长。 一阶光栅部分可以用作激光波长的反射器，从而在激光腔中产生不对称的功率分布。

    OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP
    19.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
    光电子半导体芯片和生产光电半导体芯片的方法

    公开(公告)号：US20110235664A1

    公开(公告)日：2011-09-29

    申请号：US13123779

    申请日：2009-10-12

    Applicant: Stefan Illek ,  Uwe Strauss

    Inventor： Stefan Illek ,  Uwe Strauss

    IPC: H01S5/20 ,  H01L33/58

    CPC classification number: H01S5/12 ,  H01L33/14 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/06256 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/209 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application.

    Abstract translation: 具有彼此排列的多个层的半导体层序列的光电子半导体芯片包括：有源层，具有在工作时发射方向上发射电磁辐射的有源区;活性层上的第一光栅层， 发射方向具有垂直于发射方向延伸的格栅线的形式的多个条纹，并且其间具有间隔布置的第一光栅层和覆盖第一光栅层和空间的条纹的第二光栅层，并且包括 通过非外延应用施加的透明材料。

    SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME
    20.
    发明申请
    SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体激光器及其制造方法

    公开(公告)号：US20100296539A1

    公开(公告)日：2010-11-25

    申请号：US12779272

    申请日：2010-05-13

    Applicant: Chie Fukuda ,  Takashi Kato

    Inventor： Chie Fukuda ,  Takashi Kato

    IPC: H01S5/026

    CPC classification number: H01S5/06256 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/1209 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/34306

    Abstract: A semiconductor laser according to the present invention includes a first reflective region and a second reflective region disposed opposite to the first reflective region in a predetermined direction of an optical axis. The first reflective region has a plurality of gain waveguides each including an active layer and a plurality of refractive-index controlling waveguides each having a first diffraction grating formed therein. The gain waveguides and the refractive-index controlling waveguides are alternately arranged at a predetermined pitch in the direction of the optical axis. The second reflective region has a second diffraction grating.

    Abstract translation: 根据本发明的半导体激光器包括在光轴的预定方向上与第一反射区域相对设置的第一反射区域和第二反射区域。 第一反射区域具有多个增益波导，每个增益波导包括有源层和多个折射率控制波导，每个具有形成在其中的第一衍射光栅。 增益波导和折射率控制波导在光轴的方向上以预定的间距交替布置。 第二反射区域具有第二衍射光栅。

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