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    High frequency semiconductor wafer processing apparatus and method
    191.
    发明授权
    High frequency semiconductor wafer processing apparatus and method 失效
    高频半导体晶片加工设备及方法

    公开(公告)号：US5849136A

    公开(公告)日：1998-12-15

    申请号：US754833

    申请日：1996-11-22

    Applicant: Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

    Inventor： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

    IPC: H01J37/32 ,  H05H1/00

    CPC classification number: H01J37/32082 ,  H01J37/32183

    Abstract: A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

    Abstract translation: 能够显着地高于13.56MHz的等离子体处理装置可以产生被动电极的自偏置电压降低，以使得不会损害在高速和高密度集成电路中越来越普遍的薄层的较软工艺。 使用非常规匹配网络来消除这些较高频率处的反射。 匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

    Plasma reactor using UHF/VHF and RF triode source, and process
    193.
    发明授权
    Plasma reactor using UHF/VHF and RF triode source, and process 失效
    使用UHF / VHF和RF三极管源的等离子体反应器和工艺

    公开(公告)号：US5707486A

    公开(公告)日：1998-01-13

    申请号：US683125

    申请日：1996-07-16

    Applicant: Kenneth S. Collins

    Inventor： Kenneth S. Collins

    IPC: H01J37/32 ,  B44C1/22 ,  C03C15/00 ,  H01L21/306

    CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32165

    Abstract: A plasma reactor preferably uses a split electrode which surrounds a plasma dome region of the reactor, is driven by high frequency energy selected from VHF and UHF and produces an electric field inside the electrode, parallel to the wafer support electrode. A static axial magnetic field may be used which is perpendicular to the electric field. The above apparatus generates a high density, low energy plasma inside a vacuum chamber for etching metals, dielectrics and semiconductor materials. Relatively lower frequency, preferably RF frequency, auxiliary bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various etch processes, deposition processes and combined etch/deposition processes (for example, sputter/facet deposition) are disclosed. The triode (VHF/UHF split electrode plus RF wafer support electrode) provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

    Abstract translation: 等离子体反应器优选使用围绕电抗器的等离子体圆顶区域的分离电极，其由选自VHF和UHF的高频能量驱动，并且在电极内部平行于晶片支撑电极产生电场。 可以使用垂直于电场的静态轴向磁场。 上述装置在用于蚀刻金属，电介质和半导体材料的真空室内产生高密度，低能量的等离子体。 相对较低的频率，优选RF频率，施加到晶片支撑阴极的辅助偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺（例如，溅射/刻面沉积）。 三极管（VHF / UHF分离电极加RF晶片支撑电极）提供敏感器件的处理，而不会损坏和无需微载物，从而提高产量。

    Method for dechucking a workpiece from an electrostatic chuck
    194.
    发明授权
    Method for dechucking a workpiece from an electrostatic chuck 失效
    从静电卡盘上取出工件的方法

    公开(公告)号：US5684669A

    公开(公告)日：1997-11-04

    申请号：US475368

    申请日：1995-06-07

    Applicant: Kenneth S. Collins ,  Douglas Buchberger

    Inventor： Kenneth S. Collins ,  Douglas Buchberger

    IPC: H01L21/683 ,  H02N13/00

    CPC classification number: H01L21/6831 ,  H01L21/6833 ,  H02N13/00

    Abstract: A method of dechucking a workpiece from an electrostatic chuck. The method adaptively produces a dechucking voltage for canceling any unpredictable residual electrostatic fields between a workpiece and the electrostatic chuck. The method contains the steps of (a) applying a lifting force to the workpiece; (b) altering the chucking voltage; (c) measuring the lifting force; (d) comparing the measured lifting force to a threshold level; and, depending on the result of the comparison, either (e) maintaining the chucking voltage at its present level for a predefined period of time and physically dechucking the workpiece or (f) repeating steps (b), (c), (d) and (e).

    Abstract translation: 一种从静电吸盘去除工件的方法。 该方法自适应地产生用于消除工件和静电卡盘之间的任何不可预测的残余静电场的解扣电压。 该方法包括以下步骤：（a）将提升力施加到工件; （b）改变夹紧电压; （c）测量提升力; （d）将测量的提升力与阈值水平进行比较; （e）根据比较结果，（e）将夹持电压保持在其当前水平一段预定的时间段，并将工件物理地脱扣，或（f）重复步骤（b），（c），（d） 和（e）。

    High-frequency semiconductor wafer processing apparatus and method
    195.
    发明授权
    High-frequency semiconductor wafer processing apparatus and method 失效
    高频半导体晶片加工装置及方法

    公开(公告)号：US5618382A

    公开(公告)日：1997-04-08

    申请号：US83750

    申请日：1993-06-25

    Applicant: Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

    Inventor： Donald M. Mintz ,  Hiroji Hanawa ,  Sasson Somekh ,  Dan Maydan ,  Kenneth S. Collins

    IPC: H01J37/32 ,  H05H1/46 ,  H05H1/00

    CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H05H1/46 ,  Y10S148/051

    Abstract: A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

    Abstract translation: 等离子体处理装置的电容器操作明显高于13.56MHz可以产生被动电极的自偏压降低，以使得不会损坏在高速和高密度集成电路中越来越普遍的薄层的较软工艺。 使用非常规匹配网络来消除这些较高频率处的反射。 匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

    VHF/UHF reactor system
    197.
    发明授权
    VHF/UHF reactor system 失效
    VHF / UHF反应堆系统

    公开(公告)号：US5210466A

    公开(公告)日：1993-05-11

    申请号：US852826

    申请日：1992-03-13

    Applicant: Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    Inventor： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    IPC: C23C16/509 ,  H01J37/32 ,  H05H1/46

    CPC classification number: H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H05H1/46 ,  H05K2201/10015 ,  H05K2201/10689

    Abstract: A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.

    Abstract translation: 公开了一种等离子体处理反应器，其包括整体的同轴传输线结构，其将低功率损耗，非常短的传输线耦合到等离子体室，因此允许有效地使用VHF / UHF频率来产生等离子体。 在常规频率（如13.56 MHz）下，VHF / UHF频率在50-800兆赫兹范围内的使用提供了商业上可行的处理速率（分离和同步蚀刻和沉积）和皮套电压的显着降低。 结果，减少了电敏感小型几何装置的损坏概率。

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