公开(公告)号：US20240292648A1

公开(公告)日：2024-08-29

申请号：US18645743

申请日：2024-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi SEO ,  Hiromi SEO ,  Kunihiko SUZUKI ,  Kanta ABE ,  Yuji IWAKI ,  Naoaki HASHIMOTO ,  Tsunenori SUZUKI

IPC: H10K50/16 ,  H10K50/11 ,  H10K50/15 ,  H10K50/17 ,  H10K50/81 ,  H10K50/82 ,  H10K59/00 ,  H10K85/30 ,  H10K101/40

CPC classification number: H10K50/16 ,  H10K50/11 ,  H10K50/15 ,  H10K50/171 ,  H10K50/81 ,  H10K50/82 ,  H10K59/00 ,  H10K85/321 ,  H10K2101/40

Abstract: A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a long lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.

公开(公告)号：US20240290252A1

公开(公告)日：2024-08-29

申请号：US18655975

申请日：2024-05-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Susumu KAWASHIMA ,  Koji KUSUNOKI ,  Kazunori WATANABE ,  Satoshi YOSHIMOTO

IPC: G09G3/32 ,  H10K59/131

CPC classification number: G09G3/32 ,  H10K59/131 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/02 ,  G09G2310/08 ,  G09G2330/021

Abstract: A display apparatus having a wide range of threshold voltage compensation function is provided. In the display apparatus, a p-channel transistor is used as a driving transistor of the light-emitting device. Discharging is performed through a source-drain path while constant voltage is supplied to a gate so that Vth is extracted between the gate and the source. In addition, when a drain potential is set to the sum of forward voltage and a cathode potential of the light-emitting device or a potential sufficiently lower than the sum, it is possible to continue the discharging even when Vth is positive voltage. That is, compensation can be performed even in the case where Vth variation occurs from positive voltage to negative voltage.

公开(公告)号：US12074224B2

公开(公告)日：2024-08-27

申请号：US17591690

申请日：2022-02-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshinobu Asami ,  Yutaka Okazaki ,  Satoru Okamoto ,  Shinya Sasagawa

IPC: H01L29/786 ,  C23C16/40 ,  C23C16/455 ,  H01L21/475 ,  H01L21/4757 ,  H01L21/67 ,  H01L27/12 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/67207 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262

Abstract: A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.

公开(公告)号：US20240284766A1

公开(公告)日：2024-08-22

申请号：US18569497

申请日：2022-06-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Nobuharu OHSAWA ,  Takumu OKUYAMA ,  Satoshi SEO

IPC: H10K59/80 ,  H10K59/131

CPC classification number: H10K59/878 ,  H10K59/131

Abstract: A novel display device that is highly convenient, useful, or reliable is provided. The display device includes a first light-emitting device, a second light-emitting device, an insulating film, a conductive film, a first reflective film, and a second reflective film; the first light-emitting device includes a first electrode, a second electrode, and a first unit; and the first electrode is interposed between the first unit and the insulating film. The second light-emitting device includes a third electrode, a fourth electrode, and a second unit; the third electrode is interposed between the second unit and the insulating film; and a first gap is provided between the third electrode and the first electrode. The conductive film electrically connects the second electrode and the fourth electrode to each other, and the first gap is interposed between the conductive film and the insulating film. The first reflective film is interposed between the first electrode and the insulating film, and there is a first distance DR between the first reflective film and the second electrode. The second reflective film is interposed between the third electrode and the insulating film, and there is a second distance DG between the second reflective film and the fourth electrode. The second distance DG is longer than the first distance DR and the difference is larger than 20 nm and smaller than 85 nm.

公开(公告)号：US20240284674A1

公开(公告)日：2024-08-22

申请号：US18586866

申请日：2024-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Takanori MATSUZAKI ,  Kiyoshi KATO ,  Satoru OKAMOTO

IPC: H10B43/27 ,  H01L29/24 ,  H01L29/51 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B43/50

CPC classification number: H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B43/50 ,  H01L29/24 ,  H01L29/513

Abstract: A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.

公开(公告)号：US12068198B2

公开(公告)日：2024-08-20

申请号：US17605187

申请日：2020-04-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Shinya Sasagawa ,  Naoto Yamade ,  Takashi Hamada ,  Hiroki Komagata

IPC: H01L21/8234 ,  H01L21/225 ,  H01L21/28 ,  H01L29/66 ,  H01L27/088 ,  H01L29/786

CPC classification number: H01L21/823412 ,  H01L21/2253 ,  H01L21/28185 ,  H01L29/6675 ,  H01L27/088 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and a second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

公开(公告)号：US20240274696A1

公开(公告)日：2024-08-15

申请号：US18606052

申请日：2024-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Masashi TSUBUKU

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/14616 ,  H01L27/14689 ,  H01L29/7869 ,  H01L29/78696

Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

公开(公告)号：US20240274627A1

公开(公告)日：2024-08-15

申请号：US18644613

申请日：2024-04-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro FUKUTOME ,  Hiromichi GODO

IPC: H01L27/146 ,  G01J1/42 ,  G01K13/00 ,  G06F18/214 ,  G06N3/04 ,  G06N3/08 ,  G06V10/147 ,  G06V10/44 ,  G06V10/82 ,  G06V10/94 ,  G06V20/68 ,  H04N25/75 ,  H04N25/77

CPC classification number: H01L27/14612 ,  G06F18/214 ,  G06N3/04 ,  G06N3/08 ,  G06V10/147 ,  G06V10/454 ,  G06V10/82 ,  G06V10/95 ,  H04N25/75 ,  H04N25/77 ,  G01J1/42 ,  G01K13/00 ,  G06V20/68

Abstract: Environmental information is managed by a neural network.
An image detection module includes a first neural network, a first communication module, a first position sensor, a first processor, and a passive element. The first neural network includes an imaging device. The imaging device has a function of obtaining an image, and the first position sensor has a function of detecting positional information on where the image is obtained. When the first neural network determines whether the image has learned features, the first processor can transmit the positional information on where the image is obtained. The first processor receives a detection result through the first communication module, and the first processor can operate the passive element in accordance with the detection result.

公开(公告)号：US20240272735A1

公开(公告)日：2024-08-15

申请号：US18627619

申请日：2024-04-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Masami JINTYOU ,  Yasuharu HOSAKA ,  Naoto GOTO ,  Takahiro IGUCHI ,  Daisuke KUROSAKI ,  Junichi KOEZUKA

IPC: G06F3/041 ,  G06F3/044 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K59/40

CPC classification number: G06F3/0412 ,  G06F3/0446 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/40 ,  G06F2203/04103

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US12063856B2

公开(公告)日：2024-08-13

申请号：US17703524

申请日：2022-03-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yui Yoshiyasu ,  Naoaki Hashimoto ,  Tatsuyoshi Takahashi ,  Sachiko Kawakami ,  Satoshi Seo

IPC: H10K85/60 ,  H10K50/16

CPC classification number: H10K85/6572 ,  H10K85/615 ,  H10K85/626 ,  H10K85/654 ,  H10K50/16

Abstract: A novel mixed material for a light-emitting device with improved heat resistance is provided. The mixed material for a light-emitting device includes a first heteroaromatic compound and a second heteroaromatic compound. The first heteroaromatic compound includes a first heteroaromatic ring. The first heteroaromatic ring includes a ring including two or more nitrogen atoms and any one of a benzene ring and a pyridine ring or a ring including a diazine ring or a triazine ring. The second heteroaromatic compound includes a second heteroaromatic ring. The second heteroaromatic ring includes a ring including two or more nitrogen atoms and any one of a benzene ring and a pyridine ring or a ring including a diazine ring or a triazine ring. A structure of the first heteroaromatic ring is different from a structure of the second heteroaromatic ring.