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公开(公告)号：US20190185315A1
公开(公告)日：2019-06-20
申请号：US16281866
申请日：2019-02-21
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe
CPC classification number: B81B3/0005 , B81B3/001 , B81B2201/0257 , B81B2203/0136 , B81C1/0015 , B81C1/00968 , B81C2201/112
Abstract: A MEMS device and a method to manufacture a MEMS device are disclosed. An embodiment includes forming trenches in a first main surface of a substrate, forming conductive fingers by forming a conductive material in the trenches and forming an opening from a second main surface of the substrate thereby exposing the conductive fingers, the second main surface opposite the first main surface.
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公开(公告)号：US20180201496A1
公开(公告)日：2018-07-19
申请号：US15871083
申请日：2018-01-15
Applicant: SensorTek technology Corp.
Inventor： Hsin-Hung Huang , Wei-Yang Ou
CPC classification number: B81B3/0005 , B81C1/00984 , B81C2201/112 , C23C16/0245
Abstract: A manufacturing method for a Micro-Electro-Mechanical Systems (MEMS) structure includes implementing a surface modification process, to form a transformation layer on the surfaces of the MEMS structure; implementing an anti-stiction coating clean process, to clean the transformation layer on the surfaces towards a particular direction; and implementing an anti-stiction coating process, to coat a monolayer on the surfaces of the MEMS structure.
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193.发明申请公开(公告)号：US20180002806A1
公开(公告)日：2018-01-04
申请号：US15686864
申请日：2017-08-25
Applicant: University of North Texas
Inventor： Guido Fridolin Verbeck, IV , Stephen Davila
CPC classification number: C23C14/221 , B81C2201/112 , B82B3/00 , B82Y30/00 , B82Y40/00 , C23C14/04 , C23C14/12 , C23C14/14 , C23C14/28 , C23C14/52 , C23C14/54 , H01J37/30
Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions and is capable of operating at atmospheric pressure. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components.
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公开(公告)号：US20170129774A1
公开(公告)日：2017-05-11
申请号：US15414074
申请日：2017-01-24
Applicant: MiraMEMS Sensing Technology Co., Ltd.
Inventor： Yu-Hao CHIEN , Li-Tien TSENG
CPC classification number: B81B7/0041 , B81B7/02 , B81B2201/0264 , B81B2203/0315 , B81B2203/033 , B81B2207/012 , B81B2207/07 , B81B2207/094 , B81C1/00238 , B81C1/00293 , B81C2201/112 , B81C2203/0172 , B81C2203/0792 , H01L23/10 , H01L2924/1461
Abstract: A pressure sensor using the MEMS device comprises an airtight ring surrounding a chamber defined by the first substrate and the second substrate. The airtight ring extends from the upper surface of the second substrate to the interface between the first substrate and the second substrate and further breaks out the interface. The pressure sensor utilizes the airtight ring to retain the airtightness of the chamber.
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195.发明授权Apparatus and method for preventing stiction of MEMS devices encapsulated by active circuitry 有权用于防止由有源电路封装的MEMS器件的静电的装置和方法公开(公告)号：US09556017B2
公开(公告)日：2017-01-31
申请号：US13926257
申请日：2013-06-25
Applicant: Analog Devices, Inc.
Inventor： Li Chen , Thomas Kieran Nunan , Kuang L. Yang
CPC classification number: B81B3/0051 , B81B3/0005 , B81B3/0059 , B81B2207/012 , B81C1/00976 , B81C2201/112 , B81C2203/0118
Abstract: One or more stopper features (e.g., bump structures) are formed in a standard ASIC wafer top passivation layer for preventing MEMS device stiction vertically in integrated devices having a MEMS device capped directly by an ASIC wafer. A TiN coating may be used on the stopper feature(s) for anti-stiction. An electrical potential may be applied to the TiN anti-stiction coating of one or more stopper features.
Abstract translation: 在标准ASIC晶片顶部钝化层中形成一个或多个塞子特征（例如，凸起结构），用于在具有由ASIC晶片直接覆盖的MEMS器件的集成器件中垂直地防止MEMS器件静电。 TiN涂层可用于阻塞特征以用于抗静电。 可以将电势施加到一个或多个塞子特征的TiN抗静电涂层。
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Patent Agency Ranking
公开(公告)号：US09487397B2
公开(公告)日：2016-11-08
申请号：US14844779
申请日：2015-09-03
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： William Robert Morrison , Mark Christopher Fisher , Murali Hanabe , Ganapathy Subramaniam Sivakumar , Simon Joshua Jacobs
CPC classification number: B81C1/00984 , B81B3/0005 , B81B7/0032 , B81C1/00261 , B81C1/0096 , B81C2201/112 , H01L21/02112 , H04W4/02 , Y10S257/914
Abstract: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n≧2r. The value of n may range from 2 to about 20, and the value of r may range from 1 to about 10. The value of n plus r may range from 3 to about 30, and a ratio of n:r may have a value of about 2:1 to about 20:1.
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公开(公告)号：US20160289066A1
公开(公告)日：2016-10-06
申请号：US15177129
申请日：2016-06-08
Applicant: Himax Display, Inc.
Inventor： Roland V. Gelder
CPC classification number: B81C1/00968 , B81B3/0005 , B81B2201/042 , B81C1/00984 , B81C2201/112 , C09D1/00 , C09D4/00 , C10M109/02 , C10N2240/20 , G02B1/12 , G02B1/16 , G02B26/0833
Abstract: A method for forming an anti-stiction coating on a surface of a semiconductor device is provided. Using atomic layer deposition (ALD) processes to activate surface prior to anti-stiction coating deposition, anti-stiction coating having strong chemical bonding to the surface is obtained.
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198.发明申请Method of Selectively Removing an Anti-Stiction Layer on a Eutectic Bonding Area 审中-公开选择性地去除共晶接合区域上的抗静电层的方法公开(公告)号：US20160185592A1
公开(公告)日：2016-06-30
申请号：US14583269
申请日：2014-12-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yuan-Chih Hsieh , Hung-Hua Lin , Wen-Chuan Tai , Hsiang-Fu Chen
CPC classification number: B81C1/00841 , B81B3/0005 , B81C1/00269 , B81C99/0025 , B81C2201/112 , B81C2203/0109 , C23C16/50
Abstract: A microelectromechanical systems (MEMS) package includes a eutectic bonding structure free of a native oxide layer and an anti-stiction layer, while also including a MEMS device having a top surface and sidewalls lined with the anti-stiction layer. The MEMS device is arranged within a MEMS substrate having a first eutectic bonding substructure arranged thereon. A cap substrate having a second eutectic bonding substructure arranged thereon is eutectically bonded to the MEMS substrate with a eutectic bond at the interface of the first and second eutectic bonding substructures. The anti-stiction layer lines a top surface and sidewalls of the MEMS device, but not the first and second eutectic bonding substructures. A method for manufacturing the MEMS package and a process system for selective plasma treatment are also provided.
Abstract translation: 微机电系统（MEMS）封装包括没有自然氧化物层和抗静电层的共晶接合结构，同时还包括具有顶表面和衬有抗静电层的侧壁的MEMS器件。 MEMS器件布置在具有布置在其上的第一共晶结合子结构的MEMS衬底内。 具有布置在其上的第二共晶结合子结构的盖基板在第一和第二共晶结合子结构的界面处共晶结合到MEMS基板上，并具有共晶键。 抗静电层将MEMS器件的顶表面和侧壁排列，而不是第一和第二共晶结合子结构。 还提供了用于制造MEMS封装的方法和用于选择性等离子体处理的工艺系统。
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公开(公告)号：US20150375994A1
公开(公告)日：2015-12-31
申请号：US14596967
申请日：2015-01-14
Applicant: MiraMEMS Sensing Technology Co., Ltd.
Inventor： Yu-Hao CHIEN , Li-Tien TSENG
CPC classification number: B81B7/0041 , B81B7/02 , B81B2201/0264 , B81B2203/0315 , B81B2203/033 , B81B2207/012 , B81B2207/07 , B81B2207/094 , B81C1/00238 , B81C1/00293 , B81C2201/112 , B81C2203/0172 , B81C2203/0792 , H01L23/10 , H01L2924/1461
Abstract: A pressure sensor using the MEMS device comprises an airtight ring surrounding a chamber defined by the first substrate and the second substrate. The airtight ring extends from the upper surface of the second substrate to the surface between the first substrate and the second substrate and further breaks out the surface. The pressure sensor utilizes the airtight ring to retain the airtightness of the chamber. The manufacture method of the pressure sensor is also disclosed.
Abstract translation: 使用MEMS装置的压力传感器包括围绕由第一基板和第二基板限定的室的气密环。 气密环从第二基板的上表面延伸到第一基板和第二基板之间的表面，并进一步破坏表面。 压力传感器利用气密环来保持腔室的气密性。 还公开了压力传感器的制造方法。
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公开(公告)号：US09150959B2
公开(公告)日：2015-10-06
申请号：US13089596
申请日：2011-04-19
Applicant: Kenneth A. Abbott
Inventor： Kenneth A. Abbott
CPC classification number: C23C14/564 , B03C3/017 , B05D1/185 , B05D1/60 , B81B3/0005 , B81B2201/042 , B81C2201/112 , C23C14/24 , C23C16/4402 , C23C16/45568 , C23C16/45578
Abstract: A vapor deposition system includes a filter-diffuser device connected to a vapor inlet within a vacuum chamber for simultaneously filtering inflowing vapor to remove particulate matter while injecting vapor containing perfluordecanoic acid (PFDA) into the chamber through radially arranged porous metal filters to enable the deposition of a uniform monolayer of PFDA molecules onto the surfaces of a micromechanical device, such as a digital micromirror device.
Abstract translation: 气相沉积系统包括连接到真空室内的蒸汽入口的过滤器 - 扩散器装置，用于同时过滤流入的蒸气以除去颗粒物质，同时通过径向布置的多孔金属过滤器将含有丙二酸（PFDA）的蒸汽喷射到室中，以使沉积 的PFDA分子的均匀单层到微机械装置的表面上，例如数字微镜装置。
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