Photocathode high-frequency electron-gun cavity apparatus
    252.
    发明授权
    Photocathode high-frequency electron-gun cavity apparatus 有权
    光电阴极高频电子枪腔装置

    公开(公告)号:US09224571B2

    公开(公告)日:2015-12-29

    申请号:US13825918

    申请日:2011-09-26

    Abstract: A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity (1), a photocathode (8, 15), a laser entering port (9), a high-frequency power input coupler port (10), and a high-frequency resonant tuner (16). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell (5) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.

    Abstract translation: 本发明的光电阴极高频电子枪腔装置设置有高频加速腔(1),光电阴极(8,15),激光进入口(9),高频电力输入耦合器 端口(10)和高频谐振调谐器(16)。 这里,该装置采用超小型高频加速器腔,其包含在其内表面上仅形成有平滑且曲面的空腔,而不具有用于防止放电的锐角部,从而获得较高强度的高频电 场,提高高频共振稳定性。 此外,光电阴极被布置在高频加速腔的半电池(5)的端部,用于使光电阴极面的电场强度最大化,通过将激光进入端口布置在面对的位置来确保激光的垂直入射 到高频加速腔的电子束提取口后面的光电阴极,用于使短束光电子的质量最大化,并且高频电力输入耦合器端口布置在高频加速腔的单元的侧面 用于提高高频电场强度。 根据上述,可以提供能够产生高强度和高质量电子束的小型光电阴极高频电子枪腔装置。

    Electron Gun, Method of Controlling Same, and Electron Beam Additive Manufacturing Machine
    253.
    发明申请
    Electron Gun, Method of Controlling Same, and Electron Beam Additive Manufacturing Machine 有权
    电子枪,控制方法和电子束添加剂制造机

    公开(公告)号:US20150270088A1

    公开(公告)日:2015-09-24

    申请号:US14621526

    申请日:2015-02-13

    Applicant: JEOL Ltd.

    Inventor: Takashi Satoh

    Abstract: There is disclosed a method of controlling an electron gun without causing decreases in brightness of the electron beam if a current-limiting aperture cannot be used. The electron gun (10) has a cathode (11), a Wehnelt electrode (12), a control electrode (13), an anode (14), and a controller (22). The Wehnelt electrode (12) has a first opening (12c) in which the tip of the cathode is inserted, and focuses thermal electrons emitted from the tip of the cathode (11). The thermal electrons emitted from the tip of the cathode (11) are caused to pass into a second opening (13c) by the control electrode (13). The anode (14) accelerates the thermal electrons emitted from the cathode (11) such that the thermal electrons passed through the second opening (13c) pass through a third opening (14b) and impinge as an electron beam (B1) on a powdered sample (8). The controller (22) sets the bias voltage and the control voltage based on combination conditions of the bias voltage and control voltage to maintain the brightness of the beam constant.

    Abstract translation: 如果不能使用限流孔,则公开了一种控制电子枪而不引起电子束亮度降低的方法。 电子枪(10)具有阴极(11),Wehnelt电极(12),控制电极(13),阳极(14)和控制器(22)。 Wehnelt电极(12)具有插入阴极顶端的第一开口(12c),并聚焦从阴极(11)的尖端发射的热电子。 从阴极(11)的顶端发射的热电子被控制电极(13)通入第二开口(13c)。 阳极(14)加速从阴极(11)发射的热电子,使得穿过第二开口(13c)的热电子通过第三开口(14b)并作为电子束(B1)撞击在粉末样品上 (8)。 控制器(22)基于偏置电压和控制电压的组合条件设置偏置电压和控制电压,以保持光束的亮度恒定。

    Gun configured to generate charged particles
    254.
    发明授权
    Gun configured to generate charged particles 有权
    枪被配置成产生带电粒子

    公开(公告)号:US09093243B2

    公开(公告)日:2015-07-28

    申请号:US14284128

    申请日:2014-05-21

    Inventor: Anjam Khursheed

    Abstract: A gun configured to generate charged particles, comprising a ring-cathode (200) electrically configured to generate a charged particle beam; a lens arranged to focus the charged particle beam on a specimen; and at least one correction focusing electrode (1406) arranged to generate at least one electrostatic/magnetic field to further divergently/convergently focus the charged particle beam for correcting in-plane geometric aberrations associated with the lens, the focusing being based on the in-plane geometric aberrations associated with the lens. A related method is also disclosed.

    Abstract translation: 一种配置成产生带电粒子的枪,包括电气配置以产生带电粒子束的环形阴极(200); 透镜,布置成将带电粒子束聚焦在样本上; 以及至少一个校正聚焦电极(1406),其布置成产生至少一个静电/磁场,以进一步发散/收敛地聚焦带电粒子束,用于校正与透镜相关联的面内几何像差, 与透镜相关的平面几何像差。 还公开了相关方法。

    ELECTRON-EMITTING COLD CATHODE DEVICE
    256.
    发明申请
    ELECTRON-EMITTING COLD CATHODE DEVICE 有权
    电子发射冷阴极设备

    公开(公告)号:US20150022076A1

    公开(公告)日:2015-01-22

    申请号:US14359534

    申请日:2012-11-26

    Abstract: One or more embodiments of the invention concern a device comprising: a cathode that lies on a cathode plane and includes, in an active region one or more cathode straight-finger-shaped terminals with a main extension direction parallel to a first reference direction; for each cathode terminal, one or more electron emitters formed on, and in ohmic contact with, said cathode terminal; and a gate electrode that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode and includes, in the active region, two or more gate straight-finger-shaped terminals with a main extension direction parallel to the first reference direction; wherein the gate terminals are interlaced with said cathode terminal(s).

    Abstract translation: 本发明的一个或多个实施例涉及一种装置,其包括:阴极,其位于阴极平面上,并且在有源区域中包括一个或多个阴极直指形端子,其主延伸方向平行于第一参考方向; 对于每个阴极端子,形成在所述阴极端子上并与所述阴极端子欧姆接触的一个或多个电子发射器; 并且位于与所述阴极平面平行且间隔开的栅极平面上的栅极电极不与阴极重叠,并且在有源区域中包括两个或更多个具有主延伸方向的栅极直指形端子 平行于第一参考方向; 其中栅极端子与所述阴极端子交错。

    Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode
    257.
    发明授权
    Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode 有权
    制造完全集成和封装的微制造真空二极管的方法

    公开(公告)号:US08814622B1

    公开(公告)日:2014-08-26

    申请号:US13298448

    申请日:2011-11-17

    Abstract: Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

    Abstract translation: 公开了一种封装微型二极管及其制造方法。 该方法包括在衬底中形成多个柱,其中相应的尖端设置在柱的第一端,尖端限定二极管的阴极; 在基板上设置牺牲氧化物层,多个柱和各个尖端; 在柱周围的牺牲氧化物层中形成相应的沟槽; 在所述牺牲氧化物层中形成开口以暴露所述尖端的一部分; 在所述开口和所述衬底的表面上沉积导电材料以形成所述二极管的阳极; 并去除牺牲氧化物层。

    Electron gun, electron beam exposure apparatus, and exposure method
    258.
    发明申请
    Electron gun, electron beam exposure apparatus, and exposure method 有权
    电子枪,电子束曝光装置和曝光方法

    公开(公告)号:US20080315089A1

    公开(公告)日:2008-12-25

    申请号:US12151500

    申请日:2008-05-07

    Abstract: An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.

    Abstract translation: 电子枪包括被配置为发射电子的电子源。 电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。 电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上,并被与电子源不同的材料覆盖。 电子枪通过向尖端施加电场而发射热场发射的电子,同时保持足够低的温度以避免电子源的材料的升华。 电子源的材料可以是六硼化镧(LaB 6)或六硼化铈(CeB 6)。 电子发射限制区域可以被碳覆盖。

    Charged Particle Gun
    259.
    发明申请
    Charged Particle Gun 有权
    带电粒子枪

    公开(公告)号:US20080251736A1

    公开(公告)日:2008-10-16

    申请号:US11628195

    申请日:2005-05-13

    Applicant: Tao Zhang

    Inventor: Tao Zhang

    CPC classification number: H01J3/027 H01J1/16 H01J1/18 H01J37/065 H01J37/067

    Abstract: An electron gun (1) includes an emitter (2), a tubular support (3) and an adaptor (4) for receiving the emitter. The adaptor includes a tapered plugging surface (7) and the tubular support includes a correspondingly tapered seating surface (9) for receiving the plugging surface. The plugging surface and seating surface have conical profiles which help to position the adaptor concentrically with the support.

    Abstract translation: 电子枪(1)包括用于接收发射器的发射器(2),管状支撑件(3)和适配器(4)。 适配器包括锥形堵塞表面(7),并且管状支撑件包括用于接收堵塞表面的相应锥形的座面(9)。 堵塞表面和座面具有锥形轮廓,这有助于将适配器与支撑件同心地定位。

    Field emission device and method for making same
    260.
    发明申请
    Field emission device and method for making same 有权
    场发射装置及其制造方法

    公开(公告)号:US20050280009A1

    公开(公告)日:2005-12-22

    申请号:US11139707

    申请日:2005-05-27

    CPC classification number: H01J3/022 H01J9/025

    Abstract: A field emission device (5) includes cathode electrodes (51), emitters (52) formed on the cathode electrodes, grid electrodes (54) formed over the cathode electrodes at a distance apart from the emitters, and isolated films (55) formed on surfaces of the grid electrodes neighboring the emitters. Preferably, the isolated film has a thickness ranging from 0.1 to 1 microns. The isolated film may be a film made of one or more insulating materials, such as SiO2 and Si3N4. Alternatively, the one or more insulating materials can be selected from a material having a high secondary electron emission coefficient, such as MgO, Al2O3 and ZnO. Additionally, the isolated film can be further formed on a second surface of the grid electrode distal from the emitter.

    Abstract translation: 场致发射器件(5)包括阴极电极(51),形成在阴极电极上的发射体(52),与发射体隔开一段距离形成在阴极电极上方的栅电极(54) 栅格电极的表面与发射体相邻。 优选地,隔离膜的厚度为0.1至1微米。 隔离膜可以是由一种或多种绝缘材料制成的膜,例如SiO 2和Si 3 N 4 N 4。 或者,一种或多种绝缘材料可以选自具有高二次电子发射系数的材料,例如MgO,Al 2 O 3 3和ZnO。 此外,隔离膜可以进一步形成在远离发射极的栅电极的第二表面上。

Patent Agency Ranking