Abstract:
An electron beam device has a body provided with an exit window, said body is forming or is at least partly forming a vacuum chamber, the vacuum chamber comprising therein a cathode housing and at least one electron generating filament. At least one getter sheet is provided between the cathode housing and the filament. The invention is further comprising a getter sheet for use in an electron beam device and a method of manufacturing an electron beam device comprising at least one getter sheet.
Abstract:
A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity (1), a photocathode (8, 15), a laser entering port (9), a high-frequency power input coupler port (10), and a high-frequency resonant tuner (16). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell (5) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.
Abstract:
There is disclosed a method of controlling an electron gun without causing decreases in brightness of the electron beam if a current-limiting aperture cannot be used. The electron gun (10) has a cathode (11), a Wehnelt electrode (12), a control electrode (13), an anode (14), and a controller (22). The Wehnelt electrode (12) has a first opening (12c) in which the tip of the cathode is inserted, and focuses thermal electrons emitted from the tip of the cathode (11). The thermal electrons emitted from the tip of the cathode (11) are caused to pass into a second opening (13c) by the control electrode (13). The anode (14) accelerates the thermal electrons emitted from the cathode (11) such that the thermal electrons passed through the second opening (13c) pass through a third opening (14b) and impinge as an electron beam (B1) on a powdered sample (8). The controller (22) sets the bias voltage and the control voltage based on combination conditions of the bias voltage and control voltage to maintain the brightness of the beam constant.
Abstract:
A gun configured to generate charged particles, comprising a ring-cathode (200) electrically configured to generate a charged particle beam; a lens arranged to focus the charged particle beam on a specimen; and at least one correction focusing electrode (1406) arranged to generate at least one electrostatic/magnetic field to further divergently/convergently focus the charged particle beam for correcting in-plane geometric aberrations associated with the lens, the focusing being based on the in-plane geometric aberrations associated with the lens. A related method is also disclosed.
Abstract:
Methods of marking paper products and marked paper products are provided. Some methods include irradiating the paper product to alter the functionalization of the paper.
Abstract:
One or more embodiments of the invention concern a device comprising: a cathode that lies on a cathode plane and includes, in an active region one or more cathode straight-finger-shaped terminals with a main extension direction parallel to a first reference direction; for each cathode terminal, one or more electron emitters formed on, and in ohmic contact with, said cathode terminal; and a gate electrode that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode and includes, in the active region, two or more gate straight-finger-shaped terminals with a main extension direction parallel to the first reference direction; wherein the gate terminals are interlaced with said cathode terminal(s).
Abstract:
Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.
Abstract:
An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.
Abstract:
An electron gun (1) includes an emitter (2), a tubular support (3) and an adaptor (4) for receiving the emitter. The adaptor includes a tapered plugging surface (7) and the tubular support includes a correspondingly tapered seating surface (9) for receiving the plugging surface. The plugging surface and seating surface have conical profiles which help to position the adaptor concentrically with the support.
Abstract:
A field emission device (5) includes cathode electrodes (51), emitters (52) formed on the cathode electrodes, grid electrodes (54) formed over the cathode electrodes at a distance apart from the emitters, and isolated films (55) formed on surfaces of the grid electrodes neighboring the emitters. Preferably, the isolated film has a thickness ranging from 0.1 to 1 microns. The isolated film may be a film made of one or more insulating materials, such as SiO2 and Si3N4. Alternatively, the one or more insulating materials can be selected from a material having a high secondary electron emission coefficient, such as MgO, Al2O3 and ZnO. Additionally, the isolated film can be further formed on a second surface of the grid electrode distal from the emitter.
Abstract translation:场致发射器件(5)包括阴极电极(51),形成在阴极电极上的发射体(52),与发射体隔开一段距离形成在阴极电极上方的栅电极(54) 栅格电极的表面与发射体相邻。 优选地,隔离膜的厚度为0.1至1微米。 隔离膜可以是由一种或多种绝缘材料制成的膜,例如SiO 2和Si 3 N 4 N 4。 或者,一种或多种绝缘材料可以选自具有高二次电子发射系数的材料,例如MgO,Al 2 O 3 3和ZnO。 此外,隔离膜可以进一步形成在远离发射极的栅电极的第二表面上。