公开(公告)号：US09495804B2

公开(公告)日：2016-11-15

申请号：US14840423

申请日：2015-08-31

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  MIRAISENS, Inc.

Inventor： Norio Nakamura ,  Yukio Fukui ,  Masataka Sakai

IPC: G08B6/00 ,  G06T19/00 ,  H04B3/36 ,  G06F3/01 ,  G10K15/04 ,  G06F3/041 ,  G09G5/00

CPC classification number: G06F3/016 ,  A63F13/285 ,  G06F3/011 ,  G06F3/014 ,  G06F3/041 ,  G06F2203/013 ,  G06T19/006 ,  G08B6/00 ,  G09G5/00 ,  G10K15/04 ,  H04B3/36

Abstract: A system and method are disclosed in which in a conventional non-grounding man-machine interface having no reaction base on the human body and for giving the existence of a virtual object and the impact force of a collision to a person, a haptic sensation of a torque, a force and the like can be continuously presented in the same direction, which cannot be presented by only the physical characteristic of a haptic sensation presentation device. In a haptic presentation device, the rotation velocity of at least one rotator in the haptic presentation device is controlled by a control device, and a vibration, a force or a torque as the physical characteristic is controlled, so that the user is made to conceive various haptic information of the vibration, force, torque or the like.

公开(公告)号：US09490338B2

公开(公告)日：2016-11-08

申请号：US14145147

申请日：2013-12-31

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  SANYO ELECTRIC CO., LTD.

Inventor： Shinsuke Harada ,  Tsutomu Yatsuo ,  Kenji Fukuda ,  Mitsuo Okamoto ,  Kazuhiro Adachi ,  Seiji Suzuki

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/04 ,  H01L29/78 ,  H01L21/02 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423

CPC classification number: H01L29/66477 ,  H01L21/02529 ,  H01L21/0465 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7802

Abstract: A silicon carbide vertical MOSFET having low ON-resistance and high blocking voltage is provided. For this, a first deposition film (2) of low concentration silicon carbide of a first conductivity type is formed on the surface of a high concentration silicon carbide substrate (1) of a first conductivity type. Formed on the first deposition film (2) is a second deposition film (31) that comprises a high concentration gate region of a second conductivity type, with a first region removed selectively. A third deposition film (32) formed on the second deposition film, which comprises a second region that is wider than the selectively removed first region, a high concentration source region (5) of a first conductivity type and a low concentration gate region (11) of a second conductivity type. A low concentration base region (4) of a first conductivity type is formed in contact with the first deposition film (2) in the first and second regions.

Abstract translation: 提供具有低导通电阻和高阻断电压的碳化硅垂直MOSFET。 为此，在第一导电类型的高浓度碳化硅衬底（1）的表面上形成第一导电类型的低浓度碳化硅的第一沉积膜（2）。 形成在第一沉积膜（2）上的是第二沉积膜（31），其包括第二导电类型的高浓度栅极区域，其中第一区域被选择性地去除。 形成在第二沉积膜上的第三沉积膜（32）包括比选择性去除的第一区域宽的第二区域，第一导电类型和低浓度栅极区域（11）的高浓度源区域（5） ）第二导电类型。 在第一和第二区域中形成与第一沉积膜（2）接触的第一导电类型的低浓度基区（4）。

公开(公告)号：US20160323091A1

公开(公告)日：2016-11-03

申请号：US15034282

申请日：2014-11-13

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Takashi Inoue

IPC: H04L7/00 ,  H04L27/38

CPC classification number: H04L7/0016 ,  H04B10/6164 ,  H04B10/6165 ,  H04L7/0079 ,  H04L27/38

Abstract: A carrier recovery unit is provided including: separation-and-output section that outputs separated symbol group formed into block; a priori state-estimation section that obtains a priori estimate acquired by estimating values processed this time from among values of intra-block frequency and central phase processed last time; provisional compensation section that provisionally compensates the phase of each separated symbol based on the a priori estimation phase; decision section that performs decision based on the reference signal for the symbol before decision, and obtains symbol after decision; error-estimation section that calculates the frequency and phase errors; a posteriori state-estimation section that obtains a posteriori estimate based on the frequency and phase errors; actual compensation section that actually compensates the phase based on the a posteriori estimation phase; and feedback processing section that feeds back the a posteriori estimate as the values processed last time to the a priori state estimation section.

Abstract translation: 提供一种载波恢复单元，包括：分离和输出部分，其输出形成块的分离符号组; 先验状态估计部，其通过从上次处理的块内频率和中心相位的值估计该时刻处理的值来获取获取的先验估计; 临时补偿部分，其基于先验估计阶段临时补偿每个分离符号的相位; 决定部，根据决定前的符号的参照信号进行判定，判定后得到符号; 误差估计部分，计算频率和相位误差; 后验状态估计部分，其基于频率和相位误差获得后验估计; 实际补偿部分，根据后验估计阶段实际补偿相位; 以及反馈处理部，其将后验估计作为上次处理的值反馈到先验状态估计部。

公开(公告)号：US20160284394A1

公开(公告)日：2016-09-29

申请号：US15036666

申请日：2014-09-19

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Junji TOMINAGA

IPC: G11C11/56 ,  G11C11/16 ,  G11C13/04 ,  H01L43/02 ,  H01L43/10 ,  H01L45/00 ,  H01L43/08 ,  G06F3/06 ,  G11C13/00

CPC classification number: G11C11/5607 ,  G06F3/0625 ,  G06F3/0659 ,  G06F3/0688 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  G11C13/0004 ,  G11C13/04 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/144

Abstract: A spin electronic memory of the present invention includes: a pair of electrodes 1, 2, recording layers 6a, 6b, and 6c between the electrodes 1 and 2, the recording layer being formed by laminating first alloy layer 5 and second alloy layer 4, the first alloy layer 5 being formed to contain any one of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe, and Bi2Se3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer 4 being formed to contain an alloy expressed by general formula (1) as a principal component; and spin injection layer 7 formed with a magnetic material to inject a spin into the recording layer with the magnetic material being magnetized, M1-xTex  (1) where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.

Abstract translation: [解决方案]本发明的旋转电子存储器的特征在于，通过层叠至少一对电极（1,2），主要由SbTe，Sb2Te3，BiTe，Bi2Te3等构成的第一合金层（5） BiSe或Bi2Se3，并且具有2nm至10nm的厚度（包括端值）和主要由通式（1）表示的合金构成的第二合金层（4）。 该旋转电子存储器的特征还在于包括布置在电极（1,2）之间的记录层（6a，6b，6c）和由待磁化的磁性材料形成的自旋注入层（7） 并将自旋极化电子注入记录层。 M1-xTex（1）在式（1）中，M表示Ge原子，Al原子或Si原子，x表示0.5以上且小于1的数。

公开(公告)号：US20160264893A1

公开(公告)日：2016-09-15

申请号：US15030226

申请日：2014-10-17

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Makoto Toba ,  Yohko Abe ,  Yuuji Yoshimura ,  Takehisa Mochizuki

IPC: C10L1/02

CPC classification number: C10L1/026 ,  C10G3/50 ,  C10G25/00 ,  C10L2200/0476 ,  C10L2270/026 ,  C10L2290/54 ,  C10L2290/542 ,  Y02E50/13 ,  Y02P30/20

Abstract: The purpose of the present invention is to provide a method for producing a high quality biodiesel fuel having excellent oxidation stability and few low-temperature deposits. This purpose can be achieved by the following: hydrogenating a biodiesel fuel so as to selectively convert unsaturated fatty acid monoglycerides and then removing fatty acid monoglycerides through precipitation; or using an adsorbent to further remove fatty acid monoglycerides to a high degree from the biodiesel fuel produced using the method mentioned above.

Abstract translation: 本发明的目的是提供一种具有优异的氧化稳定性和少量低温沉积物的高品质生物柴油燃料的生产方法。 该目的可以通过以下方式实现：氢化生物柴油燃料以选择性地转化不饱和脂肪酸单甘油酯，然后通过沉淀除去脂肪酸单甘油酯; 或使用吸附剂进一步从使用上述方法生产的生物柴油燃料中高度去除脂肪酸单甘油酯。

公开(公告)号：US20160263814A1

公开(公告)日：2016-09-15

申请号：US15029481

申请日：2014-08-29

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Sung Won YOUN ,  Sang Cheon PARK ,  Hiroshi HIROSHIMA ,  Hideki Takagi ,  Kenta Suzuki

IPC: B29C59/02 ,  G03F7/00 ,  B29C35/08 ,  B29C43/02 ,  B29C43/52

CPC classification number: B29C59/022 ,  B29C35/0805 ,  B29C43/021 ,  B29C43/52 ,  B29C2035/0827 ,  B29C2043/025 ,  B29C2059/023 ,  B29K2079/08 ,  C08L79/08 ,  G03F7/0002 ,  G03F7/0387

Abstract: Provided is a method for forming a pattern of polyimide that is simpler and is more excellent in the pattern shape and in the dimensional accuracy in comparison with the conventional techniques of patterning polyimide, such as photolithography and laser processing. In a method for forming a micropattern of polyimide, which includes using as polyimide a solvent-soluble polyimide resin composition that is photosensitive and is moldable at a temperature of less than or equal to a glass-transition temperature; patterning the composition using thermal imprinting; and thermally curing the composition, ultraviolet irradiation is performed after the composition is released from a mold after a molding step.

Abstract translation: 提供了一种形成聚酰亚胺图案的方法，其与诸如光刻和激光加工的常规聚酰亚胺技术相比，更简单并且在图案形状和尺寸精度方面更优异。 在形成聚酰亚胺微图案的方法中，其包括使用作为聚酰亚胺的溶剂可溶性聚酰亚胺树脂组合物，所述聚酰亚胺树脂组合物是光敏的并且可以在低于或等于玻璃化转变温度的温度下成型; 使用热压印图案化组合物; 并对组合物进行热固化，在成型步骤后从模具中脱模后进行紫外线照射。

公开(公告)号：US20160250626A1

公开(公告)日：2016-09-01

申请号：US15027943

申请日：2014-10-08

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yuichiro HIMEDA ,  Wan-Hui WANG ,  Yuichi MANAKA ,  Yuki AMAMOTO

IPC: B01J31/22 ,  C07F15/00 ,  C01B3/22

CPC classification number: B01J31/2295 ,  B01J31/1815 ,  B01J31/183 ,  B01J31/22 ,  B01J2231/763 ,  B01J2531/822 ,  B01J2531/827 ,  B01J2531/96 ,  B01J2540/10 ,  C01B3/22 ,  C01B3/26 ,  C01B32/50 ,  C01B2203/0277 ,  C01B2203/066 ,  C01B2203/1064 ,  C07F15/0033 ,  C07F15/0073 ,  H01M8/0612 ,  H01M8/0618

Abstract: A catalyst including, as effective ingredient, complex represented by Formula (1) which contains bidentate ligand including aromatic heterocyclic 5-membered ring having 2 or more nitrogen atoms, or represented by Formula (2) which contains bidentate ligand including: aromatic heterocyclic 5-membered ring having 2 or more nitrogen atoms; and 6-membered ring having 1 or more nitrogen atoms, isomer or salt of the complex: where M1 and M2 denote transition metal such as iridium; X1 to X16 each independently denote nitrogen or carbon; R1 to R13 denote, for example, hydrogen atom, alkyl group, or hydroxy group, provided that when Xi (where i denotes 13 to 16) is nitrogen, R1 is absent at position corresponding to the nitrogen; L1 and L2 denote, for example, an aromatic anionic ligand; Z1 and Z2 denote any ligand or are absent; and m and n denote positive integer, 0, or negative integer.

Abstract translation: 一种催化剂，其包含作为有效成分的由式（1）表示的配合物，其含有二齿配体，包括具有2个或更多个氮原子的芳族杂环5元环，或由式（2）表示，其含有二齿配体，包括：芳族杂环5- 具有2个以上氮原子的多元环; 和具有1个或更多个氮原子的6元环，络合物的异构体或盐：其中M1和M2表示过渡金属如铱; X1至X16各自独立地表示氮或碳; R 1至R 13表示例如氢原子，烷基或羟基，条件是当Xi（其中i表示13至16）为氮时，R 1在与氮相当的位置处不存在; L1和L2表示例如芳族阴离子配体; Z1和Z2表示任何配体或不存在; m和n表示正整数，0或负整数。

公开(公告)号：US20160247932A1

公开(公告)日：2016-08-25

申请号：US14903769

申请日：2014-07-24

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  WACOM R&D CORPORATION

Inventor： Shigeki SAKAI ,  Mitsue TAKAHASHI ,  Masaki KUSUHARA ,  Masayuki TODA ,  Masaru UMEDA

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/78391 ,  C23C16/40 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/28291 ,  H01L27/1159 ,  H01L29/516 ,  H01L29/6684

Abstract: A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr—Bi—Ta—O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr—Ca—Bi—Ta—O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.

Abstract translation: 提供了一种铁电体元件及其制造方法。 在将非易失性存储器保持能力和多次重写耐久性作为铁电体器件的特征的同时，所公开的铁电体器件与使用主要由Sr-型铁电体构成的铁电体的常规铁电体器件相比，在存储窗口中更宽， Bi-Ta-O作为锶，铋和钽的氧化物。 直接在半导体上或具有中间体的半导体上的绝缘体，层叠有第一铁电体和导体以形成栅极堆叠，第一铁电体主要由作为锶，钙，锶的氧化物的Sr-Ca-Bi-Ta-O构成， 铋和钽，并由合适的成膜原料由金属有机气相沉积技术构成。 对栅极叠层进行热处理，使第一铁电体产生铁电性。

公开(公告)号：US20160207771A1

公开(公告)日：2016-07-21

申请号：US15085586

申请日：2016-03-30

Applicant: ZEON CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Akiyoshi SHIBUYA ,  Keiichi KAWATA ,  Kenji HATA ,  Motoo YUMURA

IPC: C01B31/02 ,  C23C16/46 ,  C23C16/26

CPC classification number: C23C16/46 ,  B01J15/005 ,  B01J19/088 ,  B01J19/126 ,  B01J19/22 ,  B01J2219/0009 ,  B01J2219/00094 ,  B01J2219/00123 ,  B01J2219/00135 ,  B01J2219/00139 ,  B01J2219/00148 ,  B01J2219/00159 ,  B01J2219/00164 ,  B01J2219/0894 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/158 ,  C01B32/16 ,  C01B32/164 ,  C01B2202/08 ,  C23C16/26

Abstract: An apparatus of the present invention for producing aligned carbon nanotube aggregates is an apparatus for producing aligned carbon nanotube aggregates, the apparatus being configured to grow the aligned carbon nanotube aggregate by: causing a catalyst formed on a surface of a substrate to be surrounded by a reducing gas environment constituted by a reducing gas; heating at least either the catalyst or the reducing gas; causing the catalyst to be surrounded by a raw material gas environment constituted by a raw material gas; and heating at least either the catalyst or the raw material gas, at least either an apparatus component exposed to the reducing gas or an apparatus component exposed to the raw material gas being made from a heat-resistant alloy, and having a surface plated with molten aluminum.

Abstract translation: 本发明的用于制造排列的碳纳米管集合体的装置是一种用于生产排列的碳纳米管集合体的装置，该装置被配置为通过以下方式使对准的碳纳米管集合体生长：使形成在基板表面上的催化剂被 由还原气体构成的减少气体环境; 至少加热催化剂或还原气体; 使催化剂被原料气体构成的原料气体环境包围; 并且至少对催化剂或原料气体进行加热，至少暴露于还原气体的装置部件或暴露于原料气体的装置部件由耐热合金制成，并且具有表面镀有熔融 铝。

公开(公告)号：US09395504B2

公开(公告)日：2016-07-19

申请号：US14489147

申请日：2014-09-17

Applicant: Sumitomo Electric Industries, Ltd. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Katsumi Uesaka ,  Eiichi Banno ,  Hajime Shoji ,  Hiroyuki Matsuura ,  Haruhiko Kuwatsuka ,  Ken Tanizawa ,  Shu Namiki

IPC: H05B33/08 ,  G02B6/42 ,  G01J1/42 ,  H01S5/0687

CPC classification number: G02B6/4215 ,  G01J1/4257 ,  G01J2001/4247 ,  H01S5/0687

Abstract: A system includes: a splitter to branch an optical signal output by a wavelength-tunable light source into first to third optical signals; a first photodiode to perform an optical electrical conversion of the first optical signal transmitting a first etalon; a second photodiode to perform an optical electrical conversion of the second optical signal transmitting a second etalon, an FSR of the second etalon being identical to that of the first etalon, peak wavelengths of intensity of a transmitted light of the second etalon being different from those of the first etalon; a third photodiode to perform an optical electrical conversion of the third optical signal; and a controller to control the wavelength-tunable light source with use of a coefficient calculated by following formulas (1) or (2), Coefficient=(PD1−A·PD3)/(PD2−B·PD3) (1) and Coefficient=(PD2−B·PD3)/(PD1−A·PD3) (2).

Abstract translation: 一种系统包括：分离器，用于将由波长可调光源输出的光信号分支到第一至第三光信号中; 第一光电二极管，用于执行发射第一标准具的第一光信号的光电转换; 第二光电二极管，用于执行发射第二标准具的第二光信号的光电转换，第二标准具的FSR与第一标准具的FSR相同，第二标准具的透射光强度的峰值波长不同于 的第一个标准具; 第三光电二极管，用于执行第三光信号的光电转换; 以及使用由以下公式（1）或（2），系数=（PD1-A·PD3）/（PD2-B·PD3）（1）和系数（1）计算的系数来控制波长可调光源的控制器 =（PD2-B·PD3）/（PD1-A·PD3）（2）。