公开(公告)号：US20160204023A1

公开(公告)日：2016-07-14

申请号：US14902764

申请日：2014-07-03

Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  SICOXS CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Ko IMAOKA ,  Motoki KOBAYASHI ,  Hidetsugu UCHIDA ,  Kuniaki YAGI ,  Takamitsu KAWAHARA ,  Naoki HATTA ,  Akiyuki MINAMI ,  Toyokazu SAKATA ,  Tomoatsu MAKINO ,  Hideki TAKAGI ,  Yuuichi KURASHIMA

IPC: H01L21/762 ,  H01L29/16

CPC classification number: H01L21/76251 ,  H01L21/02002 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/76254 ,  H01L29/1608

Abstract: A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

Abstract translation: 本文公开的技术涉及具有接合界面高的接合界面的半导体基板的制造方法，而在不具有几乎不平坦化的表面的基板上，在接合界面处也不形成氧化物层。 半导体衬底的制造方法可以包括非晶层形成工艺，其中通过修饰支撑衬底的表面形成第一非晶层，并且通过改变半导体的单晶层的表面形成第二非晶层 。 制造方法可以包括其中第一非晶层和第二非晶层彼此接触的接触工艺。 制造方法可以包括其中第一非晶层和第二非晶层彼此接触地对支撑基板和单晶层进行热处理的热处理工艺。

公开(公告)号：US09389068B2

公开(公告)日：2016-07-12

申请号：US14383936

申请日：2012-12-20

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shien Ri

IPC: G01B11/25 ,  G01B11/06 ,  G06T7/40 ,  G01B11/26 ,  G01N33/483 ,  G06T7/00 ,  G01N21/88

CPC classification number: G01B11/25 ,  G01B11/06 ,  G01B11/2513 ,  G01B11/26 ,  G01N33/4833 ,  G01N2021/8829 ,  G01N2021/8887 ,  G06T7/42 ,  G06T7/521

Abstract: A fringe image phase distribution analysis technique that performs one-dimensional discrete Fourier transform using temporal intensity information or spatial intensity information to calculate the phase distribution of the fringe image. To improve the analysis accuracy of the phase distribution, a plurality of phase-shifted moiré fringe images is generated from high-dimensional intensity data by a thinning-out (down-sampling) process and an image interpolation process, and the phase distribution of the moiré fringe is calculated by a two-dimensional or three-dimensional discrete Fourier transform. In addition, the phase distribution of thinned-out is added to calculate the phase distribution of an original fringe image. Since high-dimensional intensity information which is present in both spatio-domain and temporal-domain is used, phase distribution analysis is less likely to be affected by random noise or vibration. In addition, even when measurement conditions are poor, it is possible to perform phase distribution analysis with high accuracy.

Abstract translation: 一种边缘图像相位分布分析技术，其使用时间强度信息或空间强度信息来执行一维离散付里叶变换，以计算边缘图像的相位分布。 为了提高相位分布的分析精度，通过间隔（下采样）处理和图像插值处理，从高维度强度数据生成多个相移莫尔条纹图像，并且相位分布 通过二维或三维离散傅里叶变换计算莫尔条纹。 另外，加上减薄的相位分布以计算原始条纹图像的相位分布。 由于使用了存在于时空域和时域的高维度强度信息，所以相位分布分析不太可能受到随机噪声或振动的影响。 此外，即使在测量条件差的情况下，也可以高精度地进行相位分布分析。

公开(公告)号：US20160193131A1

公开(公告)日：2016-07-07

申请号：US14911636

申请日：2014-08-11

Applicant: KANEKA CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Satohiro YANAGISAWA ,  Masashi IZUMIDA ,  Toshiaki TAIRA ,  Tomohiro IMURA ,  Dai KITAMOTO

IPC: A61K8/64 ,  A61K8/02 ,  A01N31/02 ,  A61Q17/00 ,  A61Q19/10 ,  A61K8/34 ,  A01N43/72 ,  A61Q1/14

CPC classification number: A61K8/64 ,  A01N25/30 ,  A01N31/02 ,  A01N43/72 ,  A61K8/0208 ,  A61K8/34 ,  A61K8/35 ,  A61K2800/596 ,  A61K2800/75 ,  A61Q1/14 ,  A61Q17/005 ,  A61Q19/10 ,  B01J13/02 ,  C11D3/33 ,  A01N25/34

Abstract: An objective of the present invention is to provide a method for reducing surface free energy of an organic solvent and of a mixed solution of water and a water-miscible organic solvent, a composition which has a reduced surface free energy of an organic solvent and of a mixed solution of water and a water-miscible organic solvent and which has high environmental suitability and safety to a living body, and a wet wiper and an antiseptic solution which contains the composition The method for reducing surface free energy of an organic solvent or a mixed solvent of water and a water-miscible solvent according to the present invention is characterized in comprising the step of adding surfactin or a salt thereof to the organic solvent or mixed solvent.

Abstract translation: 本发明的目的是提供一种降低有机溶剂和水与水混溶性有机溶剂的混合溶液的表面自由能的方法，该组合物具有降低的有机溶剂的表面自由能和 水和水混溶性有机溶剂的混合溶液，其对生物体具有高的环境适应性和安全性，以及含有组合物的湿式刮水器和防腐溶液。有机溶剂或有机溶剂的表面自由能降低的方法 本发明的水和水混溶性溶剂的混合溶剂的特征在于包括将表面活性素或其盐加入到有机溶剂或混合溶剂中的步骤。

公开(公告)号：US20160181376A1

公开(公告)日：2016-06-23

申请号：US15058139

申请日：2016-03-01

Applicant: FUJI ELECTRIC CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Makoto UTSUMI ,  Yoshiyuki SAKAI ,  Kenji FUKUDA ,  Shinsuke HARADA ,  Mitsuo OKAMOTO

IPC: H01L29/16 ,  H01L29/45 ,  H01L21/283 ,  H01L21/324 ,  H01L29/66 ,  H01L21/04

CPC classification number: H01L29/1608 ,  H01L21/0485 ,  H01L21/283 ,  H01L21/324 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/66477 ,  H01L29/7802

Abstract: An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. An aluminum film and a nickel film are sequentially formed in this order on the silicon carbide semiconductor substrate in an area excluding the predetermined area in which the infrared ray absorbing film is formed. The silicon carbide semiconductor substrate is thereafter heated using a rapid annealing process with a predetermined heating rate to form an electrode. The rapid annealing process converts the nickel film into a silicide and, with the aluminum film, provides an electrode having ohmic contact.

Abstract translation: 选择性地在预定区域的碳化硅半导体衬底的表面上形成红外线吸收膜。 在除了形成有红外线吸收膜的预定区域之外的区域中，在碳化硅半导体衬底上依次形成铝膜和镍膜。 然后用预定加热速率的快速退火工艺加热碳化硅半导体衬底以形成电极。 快速退火工艺将镍膜转化成硅化物，并且与铝膜一起提供具有欧姆接触的电极。

公开(公告)号：US20160168112A1

公开(公告)日：2016-06-16

申请号：US14903225

申请日：2014-07-18

Applicant: MARUZEN PETROCHEMICAL CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takashi NANIKI ,  Yasunori HAYASHI ,  Goro SAWADA ,  Takuro FURUKAWA ,  Takeshi HARUNA ,  Toshikazu TAKAHASHI ,  Hiroyuki YASUDA ,  Shouji YAMAMOTO

IPC: C07D317/38 ,  B01J31/02

CPC classification number: C07D317/38 ,  B01J27/08 ,  B01J31/0231 ,  B01J31/0239 ,  B01J31/0254 ,  B01J31/0268 ,  B01J31/0269 ,  B01J31/0271 ,  B01J2231/341 ,  B01J2531/90

Abstract: Provided is a method for continuously producing a cyclic carbonate, by which generation of a glycol in a reaction for synthesizing a cyclic carbonate is suppressed, and a cyclic carbonate having a high purity can be efficiently obtained even by simple purification.A method for continuously producing a cyclic carbonate, including filling a catalyst in a fixed-bed tube reactor, and continuously feeding carbon dioxide and an epoxide to the fixed-bed tube reactor to thereby bringing the carbon dioxide and the epoxide into contact with the catalyst, while continuously withdrawing the reaction liquid in the fixed-bed tube reactor, wherein the method includes a pre-treatment step in which a pre-treatment liquid containing a cyclic carbonate is brought into contact with the catalyst before feeding the carbon dioxide and the epoxide to the fixed-bed tube reactor, and the generated glycol is removed out of the system.

Abstract translation: 提供一种连续制备环状碳酸酯的方法，通过在环状碳酸酯的合成反应中抑制二醇的生成，即使通过简单的纯化也能够有效地得到高纯度的环状碳酸酯。 一种连续生产环状碳酸酯的方法，包括在固定床管式反应器中填充催化剂，并将二氧化碳和环氧化物连续供给到固定床管式反应器中，从而使二氧化碳和环氧化物与催化剂接触 同时连续地取出固定床管式反应器中的反应液体，其中该方法包括预处理步骤，其中使含有环状碳酸酯的预处理液体在进料二氧化碳和环氧化物之前与催化剂接触 到固定床管式反应器中，并将生成的二醇从系统中除去。

公开(公告)号：US09362482B2

公开(公告)日：2016-06-07

申请号：US13707897

申请日：2012-12-07

Applicant: Canon Kabushiki Kaisha ,  Kyoto University ,  National Institute of Advanced Industrial Science and Technology

Inventor： Makoto Kubota ,  Kenji Takashima ,  Masaki Azuma ,  Yoshitaka Nakamura ,  Yuichi Shimakawa ,  Takashi Iijima ,  Bong-Yeon Lee

IPC: B05D5/12 ,  H01L41/22 ,  C04B35/01 ,  C04B35/26 ,  H01L41/187 ,  H01L41/047 ,  H01L41/318

CPC classification number: H01L41/22 ,  C04B35/01 ,  C04B35/26 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3298 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/6585 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/963 ,  H01L41/0478 ,  H01L41/1878 ,  H01L41/318 ,  Y10T29/42

Abstract: Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Bix(Fe1-yCoy)O3  (1) where 0.95≦x≦1.25 and 0≦y≦0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0

Abstract translation: 提供一种在不损害其作为压电体的性能的同时提高其绝缘性能的铋基压电材料和使用该压电材料的压电装置。 压电材料包括由以下通式（1）表示的钙钛矿型金属氧化物：Bix（Fe1-yCoy）O3（1）其中0.95＆nlE; x＆nlE; 1.25和0＆amp; nlE; y＆nlE; 0.30，均方根粗糙度 压电材料的表面的Rq（nm）满足0

公开(公告)号：US20160155836A1

公开(公告)日：2016-06-02

申请号：US15018161

申请日：2016-02-08

Applicant: FUJI ELECTRIC CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： NORIYUKI IWAMURO ,  SHINSUKE HARADA

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/04 ,  H01L21/04 ,  H01L29/16 ,  H01L29/06

CPC classification number: H01L29/7802 ,  H01L21/046 ,  H01L29/045 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

Abstract: In an embodiment, on an n−type SiC layer on an n+-type SiC semiconductor substrate and a p+ layer selectively formed on the n−type SiC layer, a p base layer is formed on which, a p+ contact layer is selectively formed. From a surface, an n counter layer penetrates the p base layer to the n−type SiC layer. A gate electrode layer is disposed via a gate insulating film, on an exposed surface of the p base layer between the p+ contact layer and the n counter layer; and a source electrode contacts the p+ contact layer and the p base layer. In a back surface, a drain electrode is disposed. A portion of the p+ layers are joined at a region of a drain electrode side of the n counter layer, by a joining unit and a p+ layer contacts a drain electrode side of the p+ layer.

Abstract translation: 在一个实施方案中，在n +型SiC半导体衬底上的n型SiC层和选择性地形成在n型SiC层上的p +层上，形成p基极层，在其上选择性地形成p +接触层。 从表面出来，n对准层将p基层穿透到n型SiC层。 栅极电极层经由栅极绝缘膜设置在p基极层的p +接触层和n对置层之间的露出面上; 并且源电极接触p +接触层和p基层。 在背面设置有漏电极。 p +层的一部分通过接合单元在n相对层的漏电极侧的区域处接合，并且p +层接触p +层的漏电极侧。

公开(公告)号：US20160142817A1

公开(公告)日：2016-05-19

申请号：US14899053

申请日：2014-06-16

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takuya HOTEHAMA ,  Seiji NAKAGAWA

IPC: H04R1/46 ,  H04R29/00 ,  H04B17/364 ,  H04R3/04

CPC classification number: H04R1/46 ,  H04B17/364 ,  H04R3/00 ,  H04R3/04 ,  H04R29/00 ,  H04R29/004 ,  H04R2430/03 ,  H04R2460/13

Abstract: A method for measuring propagation delay characteristics in a multipath propagation environment, wherein the propagation delay characteristics are measured between a transmission means and a reception means provided in the multipath propagation environment, the method comprising a transmission step of transmitting a measurement signal comprising an information signal having a predetermined frequency from the transmission means; a reception step of receiving the measurement signal that has traveled along a plurality of propagation paths by the reception means; a calculation step of performing Hilbert transform on the received information signal to calculate instantaneous frequency characteristics from a resulting Hilbert transform signal; and an output step of outputting propagation delay characteristics corresponding to the frequency of the information signal based on the instantaneous frequency characteristics.

Abstract translation: 一种用于测量多径传播环境中的传播延迟特性的方法，其中在传输装置和设置在多径传播环境中的接收装置之间测量传播延迟特性，所述方法包括发送步骤，发送包括信息信号的测量信号 具有来自所述传输装置的预定频率; 接收步骤，接收由接收装置沿着多个传播路径行进的测量信号; 对接收到的信息信号执行希尔伯特变换的计算步骤，以从所得希尔伯特变换信号计算瞬时频率特性; 以及输出步骤，基于瞬时频率特性输出与信息信号的频率对应的传播延迟特性。

公开(公告)号：US20160126420A1

公开(公告)日：2016-05-05

申请号：US14775170

申请日：2014-03-17

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Toshiharu MAKINO ,  Satoshi YAMASAKI ,  Hideyo OOKUSHI ,  Masahiko OGURA ,  Hiromitsu KATO ,  Daisuke TAKEUCHI

IPC: H01L33/34 ,  H01L33/50

CPC classification number: H01L33/343 ,  H01L33/34 ,  H01L33/50 ,  H01L33/508

Abstract: A white light-emitting device of the present invention includes a substrate (101); a diamond semiconductor layer (105) provided on the substrate (101), in which one or a plurality of p-type α layers (102), a p-type or n-type γ layer (103), and one or a plurality of n-type β layers (104) are laminated in this order from the substrate (101); a first electrode (106) provided on the α layer (102) which injects an electric current; a second electrode (107) provided on the β layer (104) which injects an electric current; and a fluorescent member (108) which coats a light emission extraction region of the surface of the diamond semiconductor layer.

Abstract translation: 本发明的白色发光装置包括：基板（101）; 设置在基板（101）上的金刚石半导体层（105），其中一个或多个p型α层（102），p型或n型γ层（103）和一个或多个 的n型＆bgr 层（104）从基板（101）依次层叠; 设置在注入电流的α层（102）上的第一电极（106） 设置在第一电极上的第二电极（107） 注入电流的层（104）; 以及涂覆金刚石半导体层的表面的发光提取区域的荧光部件（108）。

公开(公告)号：US20160126092A1

公开(公告)日：2016-05-05

申请号：US14991887

申请日：2016-01-08

Applicant: FUJI ELECTRIC CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Youichi MAKIFUCHI ,  Takashi TSUTSUMI ,  Tsuyoshi ARAOKA ,  Mitsuo OKAMOTO ,  Kenji FUKUDA

IPC: H01L21/02 ,  H01L29/51 ,  H01L29/16

CPC classification number: H01L21/02337 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/51 ,  H01L29/518 ,  H01L29/78 ,  H01L29/94

Abstract: On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes H2 and H2O without including O2. As a result, hydrogen or hydroxyl groups can be segregated in a limited region that includes the interface of the silicon carbide substrate and the gate insulating film. The width of the region to which the hydrogen or hydroxyl groups is segregated is from 0.5 nm to 10 nm. In such a manner, the interface state density can be lowered and high channel mobility can be realized.

Abstract translation: 在碳化硅半导体衬底上，在形成一层或两层或更多层氧化膜，氮化物膜或氧氮化物膜作为栅极绝缘膜之后进行热处理。 形成栅极绝缘膜之后的热处理在包括H 2和H 2 O但不包括O 2的气氛中进行规定的时间。 结果，氢或羟基可以在包括碳化硅衬底和栅极绝缘膜的界面的有限区域中分离。 氢或羟基分离的区域的宽度为0.5nm至10nm。 以这种方式，可以降低界面状态密度并且可以实现高通道迁移率。