公开(公告)号：US07140374B2

公开(公告)日：2006-11-28

申请号：US10802460

申请日：2004-03-16

Applicant: Andrew D. Bailey, III ,  Shrikant P. Lohokare ,  Arthur M. Howald ,  Yunsang Kim

Inventor： Andrew D. Bailey, III ,  Shrikant P. Lohokare ,  Arthur M. Howald ,  Yunsang Kim

IPC: B08B9/00 ,  B44C1/22

CPC classification number: B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

公开(公告)号：US07129167B1

公开(公告)日：2006-10-31

申请号：US10879598

申请日：2004-06-28

Applicant: Andrew D. Bailey, III ,  Shrikant P. Lohokare ,  Yunsang Kim ,  Simon McClatchie

Inventor： Andrew D. Bailey, III ,  Shrikant P. Lohokare ,  Yunsang Kim ,  Simon McClatchie

IPC: H01L21/44

CPC classification number: H01L21/7684 ,  H01L21/02074 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67046 ,  H01L21/67051

Abstract: A method of cleaning a substrate includes receiving a substrate and applying a stress-free cleaning process to the top surface of the substrate. The substrate includes a top surface that is substantially free of device dependent planarity nonuniformities and device independent planarity nonuniformities. The top surface also includes a first material and a device structure formed in the first material, the device structure being formed from a second material. The device structure has a device surface exposed. The device surface has a first surface roughness. A system for stress-free cleaning a substrate is also described.

Abstract translation: 清洁基板的方法包括接收基板并向基板的顶表面施加无应力清洁处理。 衬底包括基本上没有与器件相关的平面不均匀性和器件独立平面度不均匀性的顶表面。 顶表面还包括形成在第一材料中的第一材料和器件结构，该器件结构由第二材料形成。 器件结构具有暴露的器件表面。 器件表面具有第一表面粗糙度。 还描述了一种用于无应力清洁基底的系统。

公开(公告)号：US07022611B1

公开(公告)日：2006-04-04

申请号：US10426043

申请日：2003-04-28

Applicant: Douglas L. Keil ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Mark H. Wilcoxson ,  Andrew D. Bailey, III

Inventor： Douglas L. Keil ,  Wan-Lin Chen ,  Eric A. Hudson ,  S. M. Reza Sadjadi ,  Mark H. Wilcoxson ,  Andrew D. Bailey, III

IPC: H01L21/302

CPC classification number: H01L21/0273

Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.

Abstract translation: 提供了通过在晶片上蚀刻层来制造半导体器件的方法。 在晶片上设置光致抗蚀剂层。 对光致抗蚀剂层进行图案化。 将晶片放置在处理室中。 通过在处理室中提供含有高能电子的硬化等离子体使光致抗蚀剂硬化，使光致抗蚀剂层硬化，其中高能电子具有密度。 该层在处理室内用蚀刻等离子体蚀刻，其中蚀刻等离子体中高能电子的密度小于硬化等离子体中高能电子的密度。

公开(公告)号：US07009281B2

公开(公告)日：2006-03-07

申请号：US10744355

申请日：2003-12-22

Applicant: Andrew D. Bailey, III ,  Tuqiang Ni

Inventor： Andrew D. Bailey, III ,  Tuqiang Ni

IPC: H01L23/58

CPC classification number: H01L21/67098 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/6831 ,  H01L21/7684

Abstract: A system and method of processing a substrate including loading a substrate into a plasma chamber and setting a pressure of the plasma chamber to a pre-determined pressure set point. Several inner surfaces that define a plasma zone are heated to a processing temperature of greater than about 200 degrees C. A process gas is injected into the plasma zone to form a plasma and the substrate is processed.

Abstract translation: 一种处理衬底的系统和方法，包括将衬底加载到等离子体室中并将等离子体室的压力设定为预定的压力设定点。 限定等离子体区域的几个内表面被加热到大于约200℃的处理温度。将工艺气体注入到等离子体区域中以形成等离子体，并且处理衬底。

公开(公告)号：US06518705B2

公开(公告)日：2003-02-11

申请号：US10033807

申请日：2001-12-18

Applicant: Mark H. Wilcoxson ,  Andrew D. Bailey, III ,  Andras Kuthi ,  Michael G. R. Smith ,  Alan M. Schoepp

Inventor： Mark H. Wilcoxson ,  Andrew D. Bailey, III ,  Andras Kuthi ,  Michael G. R. Smith ,  Alan M. Schoepp

IPC: H01J724

CPC classification number: H01J37/321 ,  H01J37/32467

Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

公开(公告)号：US09053925B2

公开(公告)日：2015-06-09

申请号：US13081264

申请日：2011-04-06

Applicant: Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

Inventor： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

IPC: H01L21/00 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

Abstract translation: 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

公开(公告)号：US08852384B2

公开(公告)日：2014-10-07

申请号：US13584646

申请日：2012-08-13

Applicant: KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

Inventor： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

IPC: H01L21/3065 ,  H01L21/67 ,  G01N21/68

CPC classification number: H01L21/67069 ,  G01N21/68 ,  H01L21/67028 ,  H01L21/67253

Abstract: A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

Abstract translation: 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。

公开(公告)号：US20140054269A1

公开(公告)日：2014-02-27

申请号：US13626793

申请日：2012-09-25

Applicant: Eric A. Hudson ,  Andrew D. Bailey, III ,  Rajinder Dhindsa

Inventor： Eric A. Hudson ,  Andrew D. Bailey, III ,  Rajinder Dhindsa

IPC: C23F1/00

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

Abstract translation: 用于蚀刻具有至少一个初级等离子体产生区域的等离子体处理室中的衬底和通过半屏障结构从所述初级等离子体产生区域分离的次级等离子体产生区域的方法。 该方法包括从主要等离子体产生区域中的主进料气体产生主要等离子体。 该方法还包括从次级等离子体产生区域中的二次进料气体产生二次等离子体，以使至少一些来自第二等离子体的物质迁移到初级等离子体产生区域。 该方法另外包括在初级等离子体已经用来自二次等离子体的迁移物质增强之后用初级等离子体蚀刻基板。

公开(公告)号：US08580078B2

公开(公告)日：2013-11-12

申请号：US11698189

申请日：2007-01-26

Applicant: Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  William S. Kennedy

Inventor： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  William S. Kennedy

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/3065 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6838

Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.

Abstract translation: 包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。 斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。 真空吸盘包括卡盘主体和支撑环。 卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。 真空泵在运行期间抽空真空区域。 真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。 压差也产生弯曲力以减小基板的弯曲曲率。

公开(公告)号：US20130126486A1

公开(公告)日：2013-05-23

申请号：US13438473

申请日：2012-04-03

Applicant: Ryan Bise ,  Rajinder Dhindsa ,  Alexei Marakhtanov ,  Lumin Li ,  Sang Ki Naw ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony Dela Llera ,  Darrell Ehrlich

Inventor： Ryan Bise ,  Rajinder Dhindsa ,  Alexei Marakhtanov ,  Lumin Li ,  Sang Ki Naw ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony Dela Llera ,  Darrell Ehrlich

IPC: B23K9/00

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32724 ,  H01L21/67109

Abstract: A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.

Abstract translation: 等离子体处理的系统和方法包括等离子体处理系统，其包括等离子体室和耦合到等离子体室的控制器。 等离子体室包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心气体注入区域。