公开(公告)号：US07547643B2

公开(公告)日：2009-06-16

申请号：US11046090

申请日：2005-01-28

申请人： Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

发明人： Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L2221/1047

摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.

摘要翻译： 通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。 可以利用单独或组合的多种技术之一形成该粘合层。 在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。 以在沉积低K材料之前立即氧化Si前体。 在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。 在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。 在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。 在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

公开(公告)号：US07422776B2

公开(公告)日：2008-09-09

申请号：US11149826

申请日：2005-06-10

申请人： Kang Sub Yim ,  Lihua Li Huang ,  Francimar Schmitt ,  Li-Qun Xia

发明人： Kang Sub Yim ,  Lihua Li Huang ,  Francimar Schmitt ,  Li-Qun Xia

IPC分类号： H05H1/24

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76835

摘要： Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films are formed by plasma-assisted chemical vapor deposition at low temperatures (300° C. or less). In accordance with another embodiment, as-deposited carbon containing silicon oxide films incorporate a porogen whose subsequent liberation reduces film stress.

摘要翻译： 可以使用根据本发明的各种技术来形成表现出低机械应力的低K电介质膜。 在一个实施方案中，通过在低温（300℃或更低）下的等离子体辅助化学气相沉积形成含碳氧化硅膜。 根据另一个实施方案，沉积的含碳氧化硅膜含有致孔剂，其随后的释放降低膜应力。

公开(公告)号：US20070281083A1

公开(公告)日：2007-12-06

申请号：US11756358

申请日：2007-05-31

申请人： ANNAMALAI LAKSHMANAN ,  Ganesh Balasubramanian ,  Francimar Schmitt ,  Bok Hoen Kim

发明人： ANNAMALAI LAKSHMANAN ,  Ganesh Balasubramanian ,  Francimar Schmitt ,  Bok Hoen Kim

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/4405 ,  C23C16/401 ,  H01J37/32357 ,  H01J37/32862

摘要： The present invention generally provides an apparatus and method for eliminating the “first wafer effect” for plasma enhanced chemical vapor deposition (PECVD). One embodiment of the present invention provides a method for preparing a chamber after the chamber being idle for a period of time. The method comprises a cleaning step followed by a season step and a heating step adapted to the length of the idle time.

摘要翻译： 本发明通常提供一种用于消除等离子体增强化学气相沉积（PECVD）的“第一晶圆效应”的装置和方法。 本发明的一个实施例提供一种在腔室闲置一段时间之后制备腔室的方法。 该方法包括清洁步骤，随后是季节步骤和适应空闲时间长度的加热步骤。

公开(公告)号：US07273823B2

公开(公告)日：2007-09-25

申请号：US11145432

申请日：2005-06-03

申请人： Annamalai Lakshmanan ,  Daemian Raj ,  Francimar Schmitt ,  Bok Hoen Kim ,  Ganesh Balasubramanian

发明人： Annamalai Lakshmanan ,  Daemian Raj ,  Francimar Schmitt ,  Bok Hoen Kim ,  Ganesh Balasubramanian

IPC分类号： H01L21/31 ,  H01L21/409

CPC分类号： H01L21/31612 ,  C23C16/30 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76829

摘要： A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited in the presence of low frequency RF power from a gas mixture including an organosilicon compound and an oxidizing gas. The low frequency RF power is terminated after the deposition of the low dielectric constant film. The oxide rich cap is deposited on the low dielectric constant film in the absence of low frequency RF power from another gas mixture including the organosilicon compound and the oxidizing gas used to deposit the low dielectric constant film.

摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在低频RF功率的存在下，由包括有机硅化合物和氧化气体的气体混合物沉积低介电常数膜。 在低介电常数膜的沉积之后，低频RF功率被终止。 在不存在来自包括有机硅化合物和用于沉积低介电常数膜的氧化气体的另一气体混合物的低频RF功率的情况下，在低介电常数膜上沉积富氧帽。

公开(公告)号：US20070141855A1

公开(公告)日：2007-06-21

申请号：US11678752

申请日：2007-02-26

申请人： Francimar Schmitt ,  Li-Qun Xia ,  Son Nguyen ,  Shankar Venkataraman

发明人： Francimar Schmitt ,  Li-Qun Xia ,  Son Nguyen ,  Shankar Venkataraman

IPC分类号： H01L21/31

CPC分类号： H01L21/76835 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

摘要翻译： 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底上沉积阻挡层，其中阻挡层包括硅和碳并具有小于4的介电常数，沉积与阻挡层相邻的电介质起始层，以及 沉积与电介质起始层相邻的第一电介质层，其中介电层包括硅，氧和碳并且具有约3或更小的介电常数。

公开(公告)号：US20060276054A1

公开(公告)日：2006-12-07

申请号：US11145432

申请日：2005-06-03

申请人： Annamalai Lakshmanan ,  Daemian Raj ,  Francimar Schmitt ,  Bok Kim ,  Ganesh Balasubramanian

发明人： Annamalai Lakshmanan ,  Daemian Raj ,  Francimar Schmitt ,  Bok Kim ,  Ganesh Balasubramanian

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31612 ,  C23C16/30 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76829

摘要： A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited in the presence of low frequency RF power from a gas mixture including an organosilicon compound and an oxidizing gas. The low frequency RF power is terminated after the deposition of the low dielectric constant film. The oxide rich cap is deposited on the low dielectric constant film in the absence of low frequency RF power from another gas mixture including the organosilicon compound and the oxidizing gas used to deposit the low dielectric constant film.

摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在低频RF功率的存在下，由包括有机硅化合物和氧化气体的气体混合物沉积低介电常数膜。 在低介电常数膜的沉积之后，低频RF功率被终止。 在不存在来自包括有机硅化合物和用于沉积低介电常数膜的氧化气体的另一气体混合物的低频RF功率的情况下，在低介电常数膜上沉积富氧帽。

公开(公告)号：US20050037153A1

公开(公告)日：2005-02-17

申请号：US10642081

申请日：2003-08-14

申请人： Francimar Schmitt ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Hichem M'Saad

IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H05H1/24

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633

摘要： A method for depositing a low dielectric constant film includes providing a gas mixture including one or more cyclic organosiloxanes and one or more inert gases to a substrate in a chamber. In one aspect, the gas mixture further includes one or more oxidizing gases. The ratio of a total flow rate of the one or more cyclic organosiloxanes into the chamber to a total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20. Preferably, the low dielectric constant film has compressive stress.

摘要翻译： 沉积低介电常数膜的方法包括向腔室中的基底提供包括一种或多种环状有机硅氧烷和一种或多种惰性气体的气体混合物。 一方面，气体混合物还包括一种或多种氧化性气体。 一个或多个环状有机硅氧烷进入室中的总流速与进入室中的一种或多种惰性气体的总流量的比例为约0.10至约0.20。 优选地，低介电常数膜具有压应力。