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    DEEP ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATING DEEP ULTRAVIOLET LIGHT EMITTING DEVICES
    21.
    发明申请
    DEEP ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATING DEEP ULTRAVIOLET LIGHT EMITTING DEVICES 有权
    深层超紫外线发光装置和制造深层超紫外线发光装置的方法

    公开(公告)号：US20080142783A1

    公开(公告)日：2008-06-19

    申请号：US12030539

    申请日：2008-02-13

    申请人： David Todd Emerson ,  Michael John Bergmann ,  Amber Abare ,  Kevin Haberern

    发明人： David Todd Emerson ,  Michael John Bergmann ,  Amber Abare ,  Kevin Haberern

    IPC分类号： H01L33/00 ,  H01L21/329

    CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

    摘要： Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.

    摘要翻译： 提供发光装置和制造发射波长小于360nm，壁塞效率至少为4％的发光装置的方法。 墙壁插头效率可以至少为5％或至少为6％。 还提供了发光装置和制造发射波长小于345nm并具有至少2％壁塞效率的发光装置的方法。 提供发光装置和制造发射波长小于330nm，壁塞效率至少为0.4％的发光器件的方法。 具有峰值输出波长不大于360nm和输出功率至少为5mW的发光器件的发光器件和方法，具有345nm或更小的峰值输出波长和至少3mW的输出功率 和/或峰值输出波长为330nm以下，输出功率为0.3mW以下，电流密度小于0.35μA/ m 2以下。 半导体发光器件可以具有至少100小时，至少500小时或至少1000小时的直流电寿命。

    Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
    24.
    发明授权
    Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices 有权
    深紫外光发射装置及其制造深紫外光发射装置的方法

    公开(公告)号：US08772757B2

    公开(公告)日：2014-07-08

    申请号：US12030539

    申请日：2008-02-13

    申请人： David Todd Emerson ,  Michael John Bergmann ,  Amber Abare ,  Kevin Haberern

    发明人： David Todd Emerson ,  Michael John Bergmann ,  Amber Abare ,  Kevin Haberern

    IPC分类号： H01L29/06

    CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

    摘要： Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.

    摘要翻译： 提供发光装置和制造发射波长小于360nm，壁塞效率至少为4％的发光装置的方法。 墙壁插头效率可以至少为5％或至少为6％。 还提供了发光装置和制造发射波长小于345nm并具有至少2％壁塞效率的发光装置的方法。 提供发光装置和制造发射波长小于330nm，壁塞效率至少为0.4％的发光器件的方法。 具有峰值输出波长不大于360nm和输出功率至少为5mW的发光器件的发光器件和方法，具有345nm或更小的峰值输出波长和至少3mW的输出功率 还提供了在小于约0.35μA/μm2的电流密度下的330nm或更小的峰值输出波长和至少0.3mW的输出功率。 半导体发光器件可以具有至少100小时，至少500小时或至少1000小时的直流电寿命。

    Methods of forming light emitting devices having current reducing structures
    26.
    发明授权
    Methods of forming light emitting devices having current reducing structures 有权
    形成具有电流还原结构的发光器件的方法

    公开(公告)号：US08436368B2

    公开(公告)日：2013-05-07

    申请号：US13406251

    申请日：2012-02-27

    申请人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    IPC分类号： H01L27/15

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。

    LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME
    27.
    发明申请
    LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME 有权
    具有粗糙/反射性接触的发光装置及其制造方法

    公开(公告)号：US20090250716A1

    公开(公告)日：2009-10-08

    申请号：US12476519

    申请日：2009-06-02

    申请人： Kevin Haberern ,  Michael John Bergmann ,  Van Mieczkowski ,  David Todd Emerson

    发明人： Kevin Haberern ,  Michael John Bergmann ,  Van Mieczkowski ,  David Todd Emerson

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/42 ,  H01L24/05 ,  H01L33/405 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

    摘要： Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

    摘要翻译： 发光器件包括半导体材料的有源区和有源区上的第一接触。 第一触点配置成使得由有源区域发射的光子通过第一触点。 在第一触点上设置光子吸收引线键合焊盘。 接线焊盘的面积小于第一接触面积。 反射结构设置在第一触点和引线接合焊盘之间，使得反射结构具有与引线接合焊盘基本上相同的面积。 与第一触点相对的有源区域提供第二触点。 反射结构可以仅设置在第一触点和引线接合焊盘之间。 还提供了制造这种装置的方法。

    High output group III nitride light emitting diodes
    30.
    发明申请
    High output group III nitride light emitting diodes 无效
    高输出III族氮化物发光二极管

    公开(公告)号：US20060060872A1

    公开(公告)日：2006-03-23

    申请号：US11112429

    申请日：2005-04-22

    申请人： John Edmond ,  Michael Bergmann ,  David Emerson ,  Kevin Haberern

    发明人： John Edmond ,  Michael Bergmann ,  David Emerson ,  Kevin Haberern

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325

    摘要： A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.

    摘要翻译： 公开了一种发光二极管，其包括碳化硅衬底和由衬底上的III族氮化物材料体系形成的发光结构。 该二极管具有大于100,000平方微米的面积，其在20毫安电流下的辐射通量为至少29毫瓦，其主波长为390至540纳米。