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    Algainn elog led and laser diode structures for pure blue or green emission
    21.
    发明授权
    Algainn elog led and laser diode structures for pure blue or green emission 有权
    Algainn elog led和激光二极管结构，用于纯蓝色或绿色发射

    公开(公告)号：US06345063B1

    公开(公告)日：2002-02-05

    申请号：US09363251

    申请日：1999-07-28

    申请人： David P. Bour ,  Linda T. Romano ,  Michael A. Kneissl

    发明人： David P. Bour ,  Linda T. Romano ,  Michael A. Kneissl

    IPC分类号： H01S319

    CPC分类号： H01L33/32 ,  H01L33/007

    摘要： Group III-V nitride semiconductors are used as optoelectronic light emitters. The semiconductor alloy InGaN is used as the active region in nitride laser diodes and LEDs, as its bandgap energy can be tuned by adjusting the alloy composition, to span the entire visible spectrum. InGaN layers of high-indium content, as required for blue or green emission are difficult to grow, however, because the poor lattice mismatch between GaN and InGaN causes alloy segregation. In this situation, the inhomogeneous alloy composition results in spectrally impure emission, and diminished optical gain. To suppress segregation, the high-indium-content InGaN active region may be deposited over a thick InGaN layer, substituted for the more typical GaN. First depositing a thick InGaN layer establishes a larger lattice parameter than that of GaN. Consequently, a high indium content heterostructure active region grown over the thick InGaN layer experiences significantly less lattice mismatch compared to GaN. Therefore, it is less likely to suffer structural degradation due to alloy segregation. Thus, the thick GaN structure enables the growth of a high indium content active region with improved structural and optoelectronic properties, leading to LEDs with spectrally pure emission, and lower threshold laser diodes.

    摘要翻译： III-V族氮化物半导体用作光电子发光体。 半导体合金InGaN用作氮化物激光二极管和LED中的有源区，因为其带隙能量可以通过调整合金组成来调整，以跨越整个可见光谱。 然而，蓝色或绿色发射所需的高铟含量的InGaN层难以生长，但是由于GaN和InGaN之间的不良晶格失配导致合金偏析。 在这种情况下，不均匀的合金组成导致光谱不纯的发射，并减少了光学增益。 为了抑制偏析，可以在厚的InGaN层上沉积高铟含量的InGaN有源区，代替更典型的GaN。 首先沉积厚的InGaN层形成比GaN更大的晶格参数。 因此，与GaN相比，在厚的InGaN层上生长的高铟含量的异质结构有源区域的晶格失配明显减少。 因此，由于合金分离而不太可能遭受结构劣化。 因此，厚的GaN结构能够增加具有改进的结构和光电性质的高铟含量活性区域，导致具有光谱纯发射的LED和较低阈值的激光二极管。

    Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor
    23.
    发明申请
    Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor 有权
    大面积纳米电子基板及其用途

    公开(公告)号：US20110312163A1

    公开(公告)日：2011-12-22

    申请号：US13218286

    申请日：2011-08-25

    申请人： Linda T. Romano ,  Jian Chen

    发明人： Linda T. Romano ,  Jian Chen

    IPC分类号： H01L21/20 ,  B82Y40/00

    CPC分类号： H01L29/78696 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/0072 ,  H01L27/1214 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L33/08 ,  H01L33/18 ,  H01L35/26 ,  H01L35/32 ,  H01L41/082 ,  H01L41/18 ,  H01L41/316 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0595 ,  Y02E10/549

    摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

    摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

    Gate configuration for nanowire electronic devices
    28.
    发明授权
    Gate configuration for nanowire electronic devices 失效
    纳米线电子器件的栅极配置

    公开(公告)号：US07473943B2

    公开(公告)日：2009-01-06

    申请号：US11233398

    申请日：2005-09-22

    申请人： Shahriar Mostarshed ,  Jian Chen ,  Francisco Leon ,  Yaoling Pan ,  Linda T. Romano

    发明人： Shahriar Mostarshed ,  Jian Chen ,  Francisco Leon ,  Yaoling Pan ,  Linda T. Romano

    IPC分类号： H01L29/80

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78645 ,  H01L29/78681 ,  H01L29/7869 ,  Y10S977/762 ,  Y10S977/932 ,  Y10S977/938

    摘要： Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.

    摘要翻译： 描述了具有改进的门结构的电子设备的方法，系统和装置。 电子装置包括至少一个纳米线。 栅极接触沿至少一个纳米线的长度的至少一部分定位。 介电材料层在栅极接触和至少一个纳米线之间。 源极触点和漏极触点与至少一个纳米线接触。 源极触点和/或漏极触点的至少一部分沿着该纳米线的长度与栅极触点重叠。 另一方面，一种电子器件包括具有被绝缘壳层包围的半导体芯的纳米线。 环形第一栅极区域沿着纳米线长度的一部分包围纳米线。 第二栅极区沿着纳米线和衬底之间的纳米线的长度定位。 源极触点和漏极触点在半导体芯的相应的暴露部分处耦合到纳米线的半导体芯。

    III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain
    30.
    发明申请
    III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain 有权
    III型氮化物发光器件生长在模板上以减少应变

    公开(公告)号：US20080149961A1

    公开(公告)日：2008-06-26

    申请号：US11615834

    申请日：2006-12-22

    申请人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

    发明人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

    IPC分类号： H01L33/00

    CPC分类号： H01L33/007 ,  H01L31/184

    摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

    摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数和体内晶格常数a的体晶格常数a 对应于在该结构中生长的该层的晶格常数。 一层中的应变量是|（一个平面内的）本体体积。 在一些实施方案中，发光层中的应变小于1％。