公开(公告)号：US20240145236A1

公开(公告)日：2024-05-02

申请号：US18383109

申请日：2023-10-24

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  Ryu Nakano ,  KiHun Kim ,  Rin Ha

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02274

Abstract: Provided is a method for improving the inhibiting characteristics in the upper portion of the gap. In one embodiment of the disclosure, a first inhibitor and a second inhibitor are supplied, therefore more inhibiting radicals may be generated and remove more reaction activation sites from the upper portion of the gap and improve the inhibiting characteristics in the upper portion compared to in the lower portion. The substrate processing method of the disclosure may facilitate further filling the gap with negative slope and complex structure.

公开(公告)号：US20210057214A1

公开(公告)日：2021-02-25

申请号：US16999065

申请日：2020-08-21

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Hidemi Suemori ,  Ryu Nakano

IPC: H01L21/02

Abstract: In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

公开(公告)号：US09673092B2

公开(公告)日：2017-06-06

申请号：US14199946

申请日：2014-03-06

Applicant: ASM IP HOLDING B.V.

Inventor： Ryu Nakano ,  Noboru Takamure ,  Hiroki Arai

IPC: C23C16/00 ,  H01L21/00 ,  H01L21/768 ,  C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01J37/32

CPC classification number: H01L21/76879 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32834

Abstract: A film forming apparatus includes a reactor chamber, a first electrode provided in the reactor chamber and receiving electrical power, a second electrode provided in the reactor chamber and facing the first electrode, a gas supply inlet for supplying material gas to a space between the first and second electrodes, and a gas exhaust outlet for discharging the material gas. Insulating material is not exposed to a flow path for the material gas in the reactor chamber.

公开(公告)号：US09343308B2

公开(公告)日：2016-05-17

申请号：US14065114

申请日：2013-10-28

Applicant: ASM IP Holding B.V.

Inventor： Yoshihiro Isii ,  Ryu Nakano ,  Naoki Inoue

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/033 ,  H01J37/32

CPC classification number: H01L21/0273 ,  H01J37/32091 ,  H01J37/32146 ,  H01L21/0337 ,  H01L21/31138

Abstract: A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.

Abstract translation: 一种修整含碳膜的方法包括：（i）提供其上形成有含碳膜的基材; （ii）向所述反应空间供给修整气体和稀有气体，所述修整气体包括含氧气体; 并且（iii）在电极之间施加RF功率以使用修整气体和稀有气体产生等离子体，并且由此修整含碳膜，同时以55nm / min以下的修整速率控制为至少一个 参数，选自含氧气体的流量，添加到含氧气体中的含氮气体的流量，反应空间中的压力，RF功率，RF功率的占空比 ，电极之间的距离以及放置基板的基座的温度。

公开(公告)号：US20150079311A1

公开(公告)日：2015-03-19

申请号：US14031982

申请日：2013-09-19

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Naoki Inoue

IPC: C23C16/505 ,  C23C16/40

CPC classification number: C23C16/401 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CxOy, and NxOy (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of CxOy and/or NxOy in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.

Abstract translation: 通过等离子体辅助处理形成氧化膜的方法包括：（i）将没有氧的C x O y和N x O y（x和y是整数）的反应性的前体供给到其中放置基板的反应空间; （ii）将前体暴露于反应空间中的C x O y和/或N x O y的等离子体; 和（iii）使用前体和等离子体在衬底上形成氧化膜。

公开(公告)号：US12074022B2

公开(公告)日：2024-08-27

申请号：US17410983

申请日：2021-08-24

Applicant: ASM IP Holding B.V.

Inventor： Naoki Inoue ,  Ryu Nakano ,  Shinya Yamada ,  Mao Tsuchiya

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/02274 ,  C23C16/042 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/0228 ,  H01L21/0337 ,  H01J2237/332 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02172

Abstract: Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a layer overlying the substrate by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency.

公开(公告)号：US12033849B2

公开(公告)日：2024-07-09

申请号：US18077280

申请日：2022-12-08

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Hidemi Suemori ,  Ryu Nakano

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/0228

Abstract: In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

公开(公告)号：US20240175124A1

公开(公告)日：2024-05-30

申请号：US18434982

申请日：2024-02-07

Applicant: ASM IP Holding B.V.

Inventor： Trigagema Gama ,  Ryu Nakano

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/4583 ,  C23C16/56

Abstract: Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.

公开(公告)号：US20230112490A1

公开(公告)日：2023-04-13

申请号：US18077280

申请日：2022-12-08

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Hidemi Suemori ,  Ryu Nakano

IPC: H01L21/02

Abstract: In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

公开(公告)号：US11527400B2

公开(公告)日：2022-12-13

申请号：US16999065

申请日：2020-08-21

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Hidemi Suemori ,  Ryu Nakano

IPC: H01L21/02

Abstract: In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.