公开(公告)号：US11293093B2

公开(公告)日：2022-04-05

申请号：US15863203

申请日：2018-01-05

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Feng Chen ,  Jeffrey W. Anthis ,  David Thompson ,  Mei Chang

IPC分类号： C23C16/06 ,  C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

摘要： Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：US20210066592A1

公开(公告)日：2021-03-04

申请号：US17000457

申请日：2020-08-24

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Nasrin Kazem ,  Jeffrey W. Anthis ,  Ghazal Saheli ,  David Thompson

IPC分类号： H01L45/00 ,  H01L27/24

摘要： Methods of depositing a metal-organic oxide film by exposing a substrate surface to a metal-organic precursor and an oxidant are described. The metal-organic oxide film has the general formula MOxCy, wherein M comprises one or more of a transition metal, a lanthanide, or a boron group element, x is a whole number in a range of 1 to 6, and y is a number in a range of greater than 0 to 0.5.

公开(公告)号：US20210047726A1

公开(公告)日：2021-02-18

申请号：US16990303

申请日：2020-08-11

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Alexander Jansen ,  Mark Saly

IPC分类号： C23C16/18 ,  H01L21/285 ,  H01L21/02 ,  C23C16/455

摘要： A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.

公开(公告)号：US20180195167A1

公开(公告)日：2018-07-12

申请号：US15863203

申请日：2018-01-05

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Feng F. Chen ,  Jeffrey W. Anthis ,  David Thompson ,  Mei Chang

IPC分类号： C23C16/06 ,  C23C16/455

CPC分类号： C23C16/06 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76838

摘要： Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：US20180187304A1

公开(公告)日：2018-07-05

申请号：US15909352

申请日：2018-03-01

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC分类号： C23C16/18 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/458

摘要： Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US09914995B2

公开(公告)日：2018-03-13

申请号：US14920001

申请日：2015-10-22

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC分类号： C23C16/18 ,  C23C16/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/458

CPC分类号： C23C16/18 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/4583 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76883

摘要： Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US09460959B1

公开(公告)日：2016-10-04

申请号：US14958459

申请日：2015-12-03

申请人： APPLIED MATERIALS, INC.

发明人： Xiangjin Xie ,  Feng Q. Liu ,  Daping Yao ,  Alexander Jansen ,  Joung Joo Lee ,  Adolph Miller Allen ,  Xianmin Tang ,  Mei Chang

IPC分类号： B08B6/00 ,  H01L21/768 ,  B08B7/00 ,  B08B3/00 ,  B08B5/00 ,  B08B9/00 ,  B08B9/027

CPC分类号： H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

摘要： Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt % of an alcohol to reduce a contaminated surface of the conductive material.

摘要翻译： 本文提供了处理基板的方法。 在一些实施例中，处理衬底的方法包括：将设置在衬底处理室的处理体积内的衬底加热到​​高达约400摄氏度的温度，其中衬底包括第一表面，相对的第二表面和 开口形成在第一表面中并且朝向相对的第二表面延伸，并且其中第二表面包括设置在第二表面中并与开口对准的导电材料; 以及将基底暴露于包含约80至约100重量％的醇的工艺气体中以减少导电材料的污染表面。

公开(公告)号：US20240145232A1

公开(公告)日：2024-05-02

申请号：US17976440

申请日：2022-10-28

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Mark J. Saly ,  David Thompson

IPC分类号： H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02118 ,  C23C16/0272 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02227 ,  H01L21/0228

摘要： A method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer without forming the passivation layer on a surface of the second layer by exposing the first layer and the second layer to a benzyl compound, and after forming the passivation layer on the first layer, performing at least one of: depositing a third layer on the second layer, or etching the second layer.

公开(公告)号：US11942330B2

公开(公告)日：2024-03-26

申请号：US17836694

申请日：2022-06-09

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31122 ,  H01L21/02175

摘要： Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.

公开(公告)号：US20230227968A1

公开(公告)日：2023-07-20

申请号：US18190246

申请日：2023-03-27

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC分类号： C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC分类号： C23C16/42 ,  C23C16/513 ,  C23C16/45536 ,  C23C16/52 ,  C23C16/507 ,  C23C16/45542 ,  C23C16/14

摘要： Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.