ELECTROPLATING APPARATUS WITH MEMBRANE TUBE SHIELD
    21.
    发明申请
    ELECTROPLATING APPARATUS WITH MEMBRANE TUBE SHIELD 有权
    具有膜管屏蔽的电镀设备

    公开(公告)号:US20160208402A1

    公开(公告)日:2016-07-21

    申请号:US14601989

    申请日:2015-01-21

    CPC classification number: C25D17/008 C25D5/00 C25D17/001 C25D17/007 C25D17/12

    Abstract: An electroplating apparatus has one or more membrane tube rings which act as electric field shields, to provide advantageous plating characteristics at the perimeter of a work piece. The membrane tube rings may be filled with fluids having different conductivity, to change the shielding effect as desired for electroplating different types of substrates. The membrane tube rings may optionally be provided in or on a diffuser plate in the vessel of the apparatus.

    Abstract translation: 电镀设备具有一个或多个膜管环,其作为电场屏蔽,以在工件的周边提供有利的电镀特性。 膜管环可以填充具有不同导电性的流体,以根据需要改变电镀不同类型的基底的屏蔽效果。 膜管环可以可选地设置在装置的容器中的扩散器板中或其上。

    ANNEAL MODULE FOR SEMICONDUCTOR WAFERS
    22.
    发明申请
    ANNEAL MODULE FOR SEMICONDUCTOR WAFERS 有权
    用于半导体波形的天线模块

    公开(公告)号:US20150069043A1

    公开(公告)日:2015-03-12

    申请号:US14025678

    申请日:2013-09-12

    Abstract: An anneal module for annealing semiconductor material wafers and similar substrates reduces particle contamination and oxygen ingress while providing uniform heating including for 500° C. processes. The anneal module may include a process chamber formed in a metal body having internal cooling lines. A hot plate has a pedestal supported on a thermal choke on the body. A gas distributor in the lid over the hot plate flows gas uniformly over the wafer. A transfer mechanism moves a hoop to shift the wafer between the hot plate and a cold plate.

    Abstract translation: 用于退火半导体材料晶片和类似衬底的退火模块减少了颗粒污染和氧气进入,同时提供包括500℃工艺的均匀加热。 退火模块可以包括形成在具有内部冷却线的金属体中的处理室。 热板具有支撑在身体上的热扼流圈上的基座。 热板上的盖子中的气体分布器将气体均匀地流过晶片。 传送机构移动环以在热板和冷板之间移动晶片。

    PARAMETER ADJUSTMENT MODEL FOR SEMICONDUCTOR PROCESSING CHAMBERS

    公开(公告)号:US20230257900A1

    公开(公告)日:2023-08-17

    申请号:US17670310

    申请日:2022-02-11

    CPC classification number: C25D21/12 C25D17/00 G05B13/027

    Abstract: A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

    Apparatus for post exposure bake
    26.
    发明授权

    公开(公告)号:US11550224B2

    公开(公告)日:2023-01-10

    申请号:US17001399

    申请日:2020-08-24

    Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

    SYSTEMS AND METHODS FOR IMPROVING WITHIN DIE CO-PLANARITY UNIFORMITY

    公开(公告)号:US20220270923A1

    公开(公告)日:2022-08-25

    申请号:US17742962

    申请日:2022-05-12

    Abstract: Exemplary methods of producing a semiconductor substrate may include plating a metal within a plurality of vias on the semiconductor substrate. A target average fill thickness of the metal within the plurality of vias may be between about a thickness equal to an average via radius of the plurality of vias and a thickness twice the average via radius of the plurality of vias. At least one via of the plurality of vias may be filled to a height below the target average fill thickness of the metal. The methods may include heating the metal to cause reflow of the metal within each via of the plurality of vias. The reflow may adjust the metal within the at least one via to increase in height towards the target average fill thickness.

    Cleaning components and methods in a plating system

    公开(公告)号:US11241718B2

    公开(公告)日:2022-02-08

    申请号:US16386646

    申请日:2019-04-17

    Abstract: Systems for cleaning electroplating system components may include a seal cleaning assembly incorporated with an electroplating system. The seal cleaning assembly may include an arm pivotable between a first position and a second position. The arm may be rotatable about a central axis of the arm. The seal cleaning assembly may include a cleaning head coupled with a distal portion of the arm. The cleaning head may include a bracket having a faceplate coupled with the arm, and a housing extending from the faceplate. The housing may define one or more arcuate channels extending through the housing to a front surface of the bracket. The cleaning head may also include a rotatable cartridge extending from the housing of the bracket. The cartridge may include a mount cylinder defining one or more apertures configured to deliver a cleaning solution to a pad coupled about the mount cylinder.

    Mechanically-driven oscillating flow agitation

    公开(公告)号:US11230793B2

    公开(公告)日:2022-01-25

    申请号:US17064785

    申请日:2020-10-07

    Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

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